JP2000022213A - 窒化ガリウム系半導体素子及びその製造方法 - Google Patents

窒化ガリウム系半導体素子及びその製造方法

Info

Publication number
JP2000022213A
JP2000022213A JP18346098A JP18346098A JP2000022213A JP 2000022213 A JP2000022213 A JP 2000022213A JP 18346098 A JP18346098 A JP 18346098A JP 18346098 A JP18346098 A JP 18346098A JP 2000022213 A JP2000022213 A JP 2000022213A
Authority
JP
Japan
Prior art keywords
groove
substrate
gallium nitride
based semiconductor
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18346098A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000022213A5 (enExample
Inventor
Masaki Furukawa
勝紀 古川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP18346098A priority Critical patent/JP2000022213A/ja
Publication of JP2000022213A publication Critical patent/JP2000022213A/ja
Publication of JP2000022213A5 publication Critical patent/JP2000022213A5/ja
Pending legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
JP18346098A 1998-06-30 1998-06-30 窒化ガリウム系半導体素子及びその製造方法 Pending JP2000022213A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18346098A JP2000022213A (ja) 1998-06-30 1998-06-30 窒化ガリウム系半導体素子及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18346098A JP2000022213A (ja) 1998-06-30 1998-06-30 窒化ガリウム系半導体素子及びその製造方法

Publications (2)

Publication Number Publication Date
JP2000022213A true JP2000022213A (ja) 2000-01-21
JP2000022213A5 JP2000022213A5 (enExample) 2005-10-20

Family

ID=16136176

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18346098A Pending JP2000022213A (ja) 1998-06-30 1998-06-30 窒化ガリウム系半導体素子及びその製造方法

Country Status (1)

Country Link
JP (1) JP2000022213A (enExample)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005048363A3 (en) * 2003-11-12 2005-09-15 Cree Inc Methods of processing semiconductor wafer backsides having light emitting devices (leds) thereon and leds so formed
WO2011062845A1 (en) * 2009-11-17 2011-05-26 Cree, Inc. Devices with crack stops
EP2113950A4 (en) * 2007-02-21 2015-05-27 Panasonic Ip Man Co Ltd Light-emitting semiconductor element and method for producing a light-emitting semiconductor element
US9196731B2 (en) 2013-09-03 2015-11-24 Renesas Electronics Corporation Semiconductor device
JP2016525286A (ja) * 2013-07-18 2016-08-22 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． 発光デバイスのウェファのダイシング
CN111223771A (zh) * 2020-03-10 2020-06-02 江苏丽隽功率半导体有限公司 一种垂直型硅基氮化镓功率器件减薄方法
CN112287543A (zh) * 2020-10-28 2021-01-29 华天科技（西安）有限公司 一种氮化镓晶圆生产工艺参数设计方法
CN113725069A (zh) * 2021-08-27 2021-11-30 华天科技（西安）有限公司 一种晶圆贴膜工艺优化方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63188808A (ja) * 1987-01-30 1988-08-04 Nec Kansai Ltd 磁気ヘツドの製造方法
JPH07131069A (ja) * 1993-11-06 1995-05-19 Nichia Chem Ind Ltd 窒化ガリウム系化合物半導体チップの製造方法
JPH08222807A (ja) * 1995-02-10 1996-08-30 Nichia Chem Ind Ltd 窒化物半導体レーザ素子の光共振面の形成方法
JPH08274371A (ja) * 1995-03-31 1996-10-18 Toyoda Gosei Co Ltd 半導体発光素子及びその製造方法
JPH08279481A (ja) * 1995-04-07 1996-10-22 Sony Corp 半導体装置の製造方法および製造装置
JPH1027769A (ja) * 1996-07-10 1998-01-27 Toshiba Corp 半導体チップとその製造方法
JPH11177137A (ja) * 1997-12-16 1999-07-02 Nichia Chem Ind Ltd 窒化物半導体素子の製造方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63188808A (ja) * 1987-01-30 1988-08-04 Nec Kansai Ltd 磁気ヘツドの製造方法
JPH07131069A (ja) * 1993-11-06 1995-05-19 Nichia Chem Ind Ltd 窒化ガリウム系化合物半導体チップの製造方法
JPH08222807A (ja) * 1995-02-10 1996-08-30 Nichia Chem Ind Ltd 窒化物半導体レーザ素子の光共振面の形成方法
JPH08274371A (ja) * 1995-03-31 1996-10-18 Toyoda Gosei Co Ltd 半導体発光素子及びその製造方法
JPH08279481A (ja) * 1995-04-07 1996-10-22 Sony Corp 半導体装置の製造方法および製造装置
JPH1027769A (ja) * 1996-07-10 1998-01-27 Toshiba Corp 半導体チップとその製造方法
JPH11177137A (ja) * 1997-12-16 1999-07-02 Nichia Chem Ind Ltd 窒化物半導体素子の製造方法

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005048363A3 (en) * 2003-11-12 2005-09-15 Cree Inc Methods of processing semiconductor wafer backsides having light emitting devices (leds) thereon and leds so formed
JP2007511105A (ja) * 2003-11-12 2007-04-26 クリー　インコーポレイテッド 発光デバイス（ｌｅｄ）をその上に有する半導体ウエハ裏面を加工する方法およびその方法により形成されたｌｅｄ
US7291529B2 (en) 2003-11-12 2007-11-06 Cree, Inc. Methods of processing semiconductor wafer backsides having light emitting devices (LEDs) thereon
EP2113950A4 (en) * 2007-02-21 2015-05-27 Panasonic Ip Man Co Ltd Light-emitting semiconductor element and method for producing a light-emitting semiconductor element
US8877611B2 (en) 2009-11-17 2014-11-04 Cree, Inc. Devices with crack stops
US8357996B2 (en) 2009-11-17 2013-01-22 Cree, Inc. Devices with crack stops
CN102668072A (zh) * 2009-11-17 2012-09-12 科锐公司 具有裂纹阻断件的器件
WO2011062845A1 (en) * 2009-11-17 2011-05-26 Cree, Inc. Devices with crack stops
JP2016525286A (ja) * 2013-07-18 2016-08-22 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． 発光デバイスのウェファのダイシング
US10707387B2 (en) 2013-07-18 2020-07-07 Lumileds Llc Dicing a wafer of light emitting devices
US9196731B2 (en) 2013-09-03 2015-11-24 Renesas Electronics Corporation Semiconductor device
CN111223771A (zh) * 2020-03-10 2020-06-02 江苏丽隽功率半导体有限公司 一种垂直型硅基氮化镓功率器件减薄方法
CN112287543A (zh) * 2020-10-28 2021-01-29 华天科技（西安）有限公司 一种氮化镓晶圆生产工艺参数设计方法
CN113725069A (zh) * 2021-08-27 2021-11-30 华天科技（西安）有限公司 一种晶圆贴膜工艺优化方法

Similar Documents

Publication Publication Date Title
US6197609B1 (en) Method for manufacturing semiconductor light emitting device
US7329587B2 (en) Method for the production of semi-conductor chips
EP1052684A1 (en) A method for manufacturing group III nitride compound semiconductor and a light-emitting device using group III nitride compound semiconductor
JPH11154648A (ja) 複数の半導体チップの製造方法
JP2009126727A (ja) ＧａＮ基板の製造方法、ＧａＮ基板及び半導体デバイス
JPH10114600A (ja) 発光素子および発光素子用ウエハならびにその製造方法
JPH07273367A (ja) 半導体基板の製造方法および発光素子の製造方法
US20050093016A1 (en) Nitride semiconductor light-emitting diode chip and method of manufacturing the same
JPH07249830A (ja) 半導体発光素子の製造方法
JPH10135140A (ja) ヘテロエピタキシャル成長方法、ヘテロエピタキシャル層および半導体発光素子
JPH1027769A (ja) 半導体チップとその製造方法
JP2000331940A (ja) サファイア基板、窒化物系ｉｉｉ−ｖ族化合物半導体層の成長方法および半導体装置の製造方法
US7183585B2 (en) Semiconductor device and a method for the manufacture thereof
JPH11126763A (ja) 半導体デバイスの分離方法
JP2002329665A (ja) 窒化物半導体から成る単体基板の製造方法
JP5065625B2 (ja) ＧａＮ単結晶基板の製造方法
TW202316504A (zh) 半導體裝置之製造方法及製造裝置
JPH08250802A (ja) 半導体レーザ及びその製造方法
JP2002344019A (ja) 発光ダイオード及びその製造方法
JPH11214749A (ja) 半導体発光装置
US6240115B1 (en) Epitaxial facet formation for laser diodes based on III-V material systems
JP2002324758A (ja) 窒化物半導体基板、及びそれを用いた窒化物半導体素子の製造方法
JP3956422B2 (ja) ３−５族化合物半導体チップの製造方法
JP4141076B2 (ja) Ｉｉｉ族窒化物半導体基板の製造方法
JP2008192900A (ja) ＧａＮ系発光ダイオード素子の製造方法

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050629

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20050629

RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20050629

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20080521

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080603

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20081014