ITMI930624A1 - Dispositivo di memoria a semiconduttori di tipo dinamico atto a operare in un modo ad auto-rinfresco - Google Patents

Dispositivo di memoria a semiconduttori di tipo dinamico atto a operare in un modo ad auto-rinfresco

Info

Publication number
ITMI930624A1
ITMI930624A1 IT000624A ITMI930624A ITMI930624A1 IT MI930624 A1 ITMI930624 A1 IT MI930624A1 IT 000624 A IT000624 A IT 000624A IT MI930624 A ITMI930624 A IT MI930624A IT MI930624 A1 ITMI930624 A1 IT MI930624A1
Authority
IT
Italy
Prior art keywords
self
operating
memory device
semiconductor memory
device suitable
Prior art date
Application number
IT000624A
Other languages
English (en)
Inventor
Youichi Tobita
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of ITMI930624A0 publication Critical patent/ITMI930624A0/it
Publication of ITMI930624A1 publication Critical patent/ITMI930624A1/it
Application granted granted Critical
Publication of IT1263856B publication Critical patent/IT1263856B/it

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40615—Internal triggering or timing of refresh, e.g. hidden refresh, self refresh, pseudo-SRAMs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4076—Timing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4093—Input/output [I/O] data interface arrangements, e.g. data buffers
ITMI930624A 1992-04-01 1993-03-30 Dispositivo di memoria a semiconduttori di tipo dinamico atto a operare in un modo ad auto-rinfresco IT1263856B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4078105A JP2982928B2 (ja) 1992-04-01 1992-04-01 半導体記憶装置

Publications (3)

Publication Number Publication Date
ITMI930624A0 ITMI930624A0 (it) 1993-03-30
ITMI930624A1 true ITMI930624A1 (it) 1994-09-30
IT1263856B IT1263856B (it) 1996-09-04

Family

ID=13652611

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI930624A IT1263856B (it) 1992-04-01 1993-03-30 Dispositivo di memoria a semiconduttori di tipo dinamico atto a operare in un modo ad auto-rinfresco

Country Status (5)

Country Link
US (1) US5404335A (it)
JP (1) JP2982928B2 (it)
KR (1) KR960008278B1 (it)
DE (1) DE4309363C2 (it)
IT (1) IT1263856B (it)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2658958B2 (ja) * 1995-03-31 1997-09-30 日本電気株式会社 Ｄｍａコントローラ
JP4036487B2 (ja) 1995-08-18 2008-01-23 株式会社ルネサステクノロジ 半導体記憶装置、および半導体回路装置
US5841707A (en) * 1995-11-29 1998-11-24 Texas Instruments Incorporated Apparatus and method for a programmable interval timing generator in a semiconductor memory
US5926827A (en) * 1996-02-09 1999-07-20 International Business Machines Corp. High density SIMM or DIMM with RAS address re-mapping
JP3704188B2 (ja) * 1996-02-27 2005-10-05 株式会社ルネサステクノロジ 半導体記憶装置
US6209071B1 (en) 1996-05-07 2001-03-27 Rambus Inc. Asynchronous request/synchronous data dynamic random access memory
JPH09306168A (ja) * 1996-05-14 1997-11-28 Mitsubishi Electric Corp 半導体記憶装置
JPH10228768A (ja) * 1997-02-14 1998-08-25 Mitsubishi Electric Corp 半導体記憶装置
US5991851A (en) * 1997-05-02 1999-11-23 Enhanced Memory Systems, Inc. Enhanced signal processing random access memory device utilizing a DRAM memory array integrated with an associated SRAM cache and internal refresh control
KR100487485B1 (ko) * 1997-06-24 2005-07-29 삼성전자주식회사 리프래시모드를갖는반도체메모리장치
KR100487484B1 (ko) * 1997-06-24 2005-07-29 삼성전자주식회사 반도체메모리장치의리프래시제어회로
US6072737A (en) 1998-08-06 2000-06-06 Micron Technology, Inc. Method and apparatus for testing embedded DRAM
US6034900A (en) * 1998-09-02 2000-03-07 Micron Technology, Inc. Memory device having a relatively wide data bus
US6111796A (en) * 1999-03-01 2000-08-29 Motorola, Inc. Programmable delay control for sense amplifiers in a memory
DE10000758C2 (de) * 2000-01-11 2001-11-15 Infineon Technologies Ag Impulserzeuger
US6719388B2 (en) * 2002-01-16 2004-04-13 Xerox Corporation Fail-safe circuit for dynamic smartpower integrated circuits
JP4416372B2 (ja) * 2002-02-25 2010-02-17 富士通マイクロエレクトロニクス株式会社 半導体記憶装置
JP2003317472A (ja) 2002-04-17 2003-11-07 Mitsubishi Electric Corp 半導体記憶装置
JP2011081553A (ja) * 2009-10-06 2011-04-21 Renesas Electronics Corp 情報処理装置及びその制御方法
US9159383B2 (en) 2012-04-11 2015-10-13 Micron Technology, Inc. Signal management in a memory device

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4344157A (en) * 1978-06-26 1982-08-10 Texas Instruments Incorporated On-chip refresh address generator for dynamic memory
US4360868A (en) * 1978-12-06 1982-11-23 Data General Corporation Instruction prefetch means having first and second register for storing and providing a current PC while generating a next PC
US4368514A (en) * 1980-04-25 1983-01-11 Timeplex, Inc. Multi-processor system
US4412314A (en) * 1980-06-02 1983-10-25 Mostek Corporation Semiconductor memory for use in conjunction with error detection and correction circuit
JPS6157097A (ja) * 1984-08-27 1986-03-22 Nec Corp ダイナミツク半導体メモリ
JPS6212991A (ja) * 1985-07-10 1987-01-21 Fujitsu Ltd 半導体記憶装置
JPS6355797A (ja) * 1986-08-27 1988-03-10 Fujitsu Ltd メモリ
JPS643896A (en) * 1987-06-24 1989-01-09 Mitsubishi Electric Corp Semiconductor dynamic ram
JP2762589B2 (ja) * 1989-07-21 1998-06-04 日本電気株式会社 半導体メモリ回路

Also Published As

Publication number Publication date
JPH05282865A (ja) 1993-10-29
DE4309363A1 (de) 1993-10-14
DE4309363C2 (de) 1996-03-28
IT1263856B (it) 1996-09-04
JP2982928B2 (ja) 1999-11-29
ITMI930624A0 (it) 1993-03-30
KR930022367A (ko) 1993-11-24
US5404335A (en) 1995-04-04
KR960008278B1 (ko) 1996-06-21

Similar Documents

Publication Publication Date Title
ITMI930624A1 (it) Dispositivo di memoria a semiconduttori di tipo dinamico atto a operare in un modo ad auto-rinfresco
DE69328342D1 (de) Halbleiterspeicherzelle
DE69121483T2 (de) Dynamische Halbleiterspeicherzelle
DE69327499D1 (de) Halbleiterspeicher
KR900012276A (ko) 다이내믹형 반도체기억장치
DE69229104T2 (de) Stroboskopische Signale in Halbleiterspeicheranordnungen
DE69215707T2 (de) Halbleiter-Speicherzelle
DE4407210B4 (de) Halbleiterspeicherbauelementaufbau
DE69322311D1 (de) Halbleiterspeicheranordnung
DE69322747D1 (de) Halbleiterspeicheranordnung
EP0449207A3 (en) Dynamic type semiconductor memory device
DE69414760D1 (de) Halbleiter-Speichervorrichtung
DE69427443D1 (de) Halbleiterspeicheranordnung
DE69432846D1 (de) Halbleiterspeichereinrichtung
IT1151245B (it) Dispositivo do memoria a semiconduttori in particolare memoria ad accesso casuale dinamica
DE69326494D1 (de) Halbleiterspeicheranordnung
DE69332966D1 (de) Halbleiterspeicherbauelement
DE69324470D1 (de) Halbleiterspeicheranordnung
DE69322436D1 (de) Halbleiterspeicheranordnung
DE69427107T2 (de) Halbleiterspeicheranordnung
DE69325132D1 (de) Halbleiterspeicherbauelement
KR900010780A (ko) Mos형 반도체기억장치
DE69414452T2 (de) Halbleiterspeichergerät
EP0571209A3 (en) Bit-line sensing in semiconductor memory devices.
DE69327125T2 (de) Halbleiterspeicher

Legal Events

Date Code Title Description
0001 Granted
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970326