IT1250087B - Dispositivo di memoria a semiconduttori in grado di eseguire operazioni di rinfresco non periodiche. - Google Patents
Dispositivo di memoria a semiconduttori in grado di eseguire operazioni di rinfresco non periodiche.Info
- Publication number
- IT1250087B IT1250087B ITRM910644A ITRM910644A IT1250087B IT 1250087 B IT1250087 B IT 1250087B IT RM910644 A ITRM910644 A IT RM910644A IT RM910644 A ITRM910644 A IT RM910644A IT 1250087 B IT1250087 B IT 1250087B
- Authority
- IT
- Italy
- Prior art keywords
- memory device
- semiconductor memory
- refresh request
- periodic refreshing
- refreshing operations
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Read Only Memory (AREA)
Abstract
E' descritto un dispositivo di memoria a semiconduttori, avente celle di memoria che memorizzano continuativamente in esse una data informazione mediante scrittura, cioè, una operazione di rinfresco, in grado di effettuare operazioni di rinfresco non periodiche. L'elemento di memoria a semiconduttori comprende al suo interno un generatore di segnale di richiesta di rinfresco avente una cella di memoria di riferimento 51 collegata ad una linea di parola nel dispositivo di memoria. Il generatore 100A di segnale di richiesta di rinfresco genera segnali di richiesta di rinfresco soltanto al momento di cancellazione della informazione memorizzata nella cella di memoria. I segnali di richiesta di rinfresco posti in uscita fanno in modo che i segnali di rinfresco vengano trasferiti alla cella di memoria. Conseguentemente, si possono effettuare operazioni di rinfresco non periodiche, riducendo in tal modo il consumo di potenza, ed aumentando il numero di lavoro di ingresso/uscita di dati.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019910007979A KR920022293A (ko) | 1991-05-16 | 1991-05-16 | 비정기적인 리프레쉬 동작을 실행하는 반도체 메모리 장치 |
Publications (3)
Publication Number | Publication Date |
---|---|
ITRM910644A0 ITRM910644A0 (it) | 1991-08-29 |
ITRM910644A1 ITRM910644A1 (it) | 1993-03-01 |
IT1250087B true IT1250087B (it) | 1995-03-30 |
Family
ID=19314543
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ITRM910644A IT1250087B (it) | 1991-05-16 | 1991-08-29 | Dispositivo di memoria a semiconduttori in grado di eseguire operazioni di rinfresco non periodiche. |
Country Status (8)
Country | Link |
---|---|
US (1) | US5278797A (it) |
JP (1) | JPH04344387A (it) |
KR (1) | KR920022293A (it) |
DE (1) | DE4124904A1 (it) |
FR (1) | FR2676578A1 (it) |
GB (1) | GB2255844A (it) |
IT (1) | IT1250087B (it) |
TW (1) | TW225603B (it) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06281911A (ja) * | 1992-12-18 | 1994-10-07 | At & T Global Inf Solutions Internatl Inc | コンピューター用ビデオラム(v−ram) |
JP3922653B2 (ja) * | 1993-03-17 | 2007-05-30 | ゲイトフィールド・コーポレイション | ランダムアクセスメモリ(ram)ベースのコンフィギュラブルアレイ |
JPH07141865A (ja) * | 1993-06-28 | 1995-06-02 | Mitsubishi Electric Corp | 発振回路および半導体記憶装置 |
US5392251A (en) * | 1993-07-13 | 1995-02-21 | Micron Semiconductor, Inc. | Controlling dynamic memory refresh cycle time |
JP2836453B2 (ja) * | 1993-08-26 | 1998-12-14 | 日本電気株式会社 | 半導体メモリの初段回路方式 |
JPH07182857A (ja) * | 1993-12-24 | 1995-07-21 | Toshiba Corp | マイコンシステム |
TW301750B (it) * | 1995-02-08 | 1997-04-01 | Matsushita Electric Ind Co Ltd | |
US5717644A (en) * | 1996-10-09 | 1998-02-10 | International Business Machines Corporation | Apparatus for varying the refresh rate for a DRAM in response to variation in operating voltages and method thereof |
US5712825A (en) * | 1996-10-09 | 1998-01-27 | International Business Machines Corporation | Maintaining data integrity in DRAM while varying operating voltages |
US5890198A (en) * | 1996-10-22 | 1999-03-30 | Micron Technology, Inc. | Intelligent refresh controller for dynamic memory devices |
FR2775382B1 (fr) * | 1998-02-25 | 2001-10-05 | St Microelectronics Sa | Procede de controle du rafraichissement d'un plan memoire d'un dispositif de memoire vive dynamique, et dispositif de memoire vive correspondant |
KR100524059B1 (ko) * | 1998-10-01 | 2005-12-21 | 삼성전자주식회사 | 컴퓨터의 에스.티.알. 기능 지원장치 |
JP4392740B2 (ja) * | 2001-08-30 | 2010-01-06 | 株式会社ルネサステクノロジ | 半導体記憶回路 |
US6515929B1 (en) * | 2001-10-29 | 2003-02-04 | Etron Technology, Inc. | Partial refresh feature in pseudo SRAM |
KR100481928B1 (ko) * | 2002-07-04 | 2005-04-13 | 주식회사 하이닉스반도체 | 휘발성 메모리 소자의 리프래쉬 주기 제어 회로 및 이를이용한 리프래쉬 방법 |
US7474579B2 (en) * | 2006-12-20 | 2009-01-06 | Spansion Llc | Use of periodic refresh in medium retention memory arrays |
KR101963457B1 (ko) * | 2011-04-29 | 2019-03-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 기억 장치 및 그 구동 방법 |
KR20150138026A (ko) | 2014-05-29 | 2015-12-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1774962C2 (de) * | 1967-06-07 | 1974-02-28 | Motorola Inc., Franklin Park, Ill. (V.St.A.) | Anordnung zur Speicherung von analogen Signalen. Ausscheidung-aus: 1763459 |
US3705392A (en) * | 1971-09-07 | 1972-12-05 | Texas Instruments Inc | Mos dynamic memory |
US4547867A (en) * | 1980-10-01 | 1985-10-15 | Intel Corporation | Multiple bit dynamic random-access memory |
JPS5956291A (ja) * | 1982-09-24 | 1984-03-31 | Hitachi Ltd | Mos記憶装置 |
JPS59227090A (ja) * | 1983-06-06 | 1984-12-20 | Hitachi Ltd | 不揮発性メモリ装置 |
JPS6083293A (ja) * | 1983-10-14 | 1985-05-11 | Hitachi Micro Comput Eng Ltd | ダイナミツク型ram |
JPS60242586A (ja) * | 1984-05-16 | 1985-12-02 | Hitachi Micro Comput Eng Ltd | 半導体集積回路装置 |
JPS6150287A (ja) * | 1984-08-20 | 1986-03-12 | Toshiba Corp | ダイナミツクメモリの自動リフレツシユ制御回路 |
JPS62154293A (ja) * | 1985-12-26 | 1987-07-09 | Casio Comput Co Ltd | 半導体記憶装置 |
JPS63121197A (ja) * | 1986-11-07 | 1988-05-25 | Fujitsu Ltd | 半導体記憶装置 |
JP2647527B2 (ja) * | 1990-02-21 | 1997-08-27 | シャープ株式会社 | センス増幅回路 |
-
1991
- 1991-05-16 KR KR1019910007979A patent/KR920022293A/ko not_active IP Right Cessation
- 1991-07-05 US US07/726,182 patent/US5278797A/en not_active Expired - Fee Related
- 1991-07-10 TW TW080105355A patent/TW225603B/zh active
- 1991-07-26 DE DE4124904A patent/DE4124904A1/de not_active Ceased
- 1991-07-26 FR FR9109512A patent/FR2676578A1/fr active Pending
- 1991-08-29 IT ITRM910644A patent/IT1250087B/it active IP Right Grant
- 1991-08-29 JP JP3242318A patent/JPH04344387A/ja active Pending
- 1991-08-30 GB GB9118624A patent/GB2255844A/en not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
GB2255844A (en) | 1992-11-18 |
DE4124904A1 (de) | 1992-11-19 |
ITRM910644A0 (it) | 1991-08-29 |
JPH04344387A (ja) | 1992-11-30 |
GB9118624D0 (en) | 1991-10-16 |
FR2676578A1 (fr) | 1992-11-20 |
US5278797A (en) | 1994-01-11 |
ITRM910644A1 (it) | 1993-03-01 |
TW225603B (it) | 1994-06-21 |
KR920022293A (ko) | 1992-12-19 |
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