TW225603B - - Google Patents

Info

Publication number
TW225603B
TW225603B TW80105355A TW80105355A TW225603B TW 225603 B TW225603 B TW 225603B TW 80105355 A TW80105355 A TW 80105355A TW 80105355 A TW80105355 A TW 80105355A TW 225603 B TW225603 B TW 225603B
Authority
TW
Taiwan
Application number
TW80105355A
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to KR1019910007979A priority Critical patent/KR920022293A/ko
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Application granted granted Critical
Publication of TW225603B publication Critical patent/TW225603B/zh

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406Management or control of the refreshing or charge-regeneration cycles
TW80105355A 1991-05-16 1991-07-10 TW225603B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019910007979A KR920022293A (ko) 1991-05-16 1991-05-16 비정기적인 리프레쉬 동작을 실행하는 반도체 메모리 장치

Publications (1)

Publication Number Publication Date
TW225603B true TW225603B (zh) 1994-06-21

Family

ID=19314543

Family Applications (1)

Application Number Title Priority Date Filing Date
TW80105355A TW225603B (zh) 1991-05-16 1991-07-10

Country Status (8)

Country Link
US (1) US5278797A (zh)
JP (1) JPH04344387A (zh)
KR (1) KR920022293A (zh)
DE (1) DE4124904A1 (zh)
FR (1) FR2676578A1 (zh)
GB (1) GB2255844A (zh)
IT (1) IT1250087B (zh)
TW (1) TW225603B (zh)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06281911A (ja) * 1992-12-18 1994-10-07 At & T Global Inf Solutions Internatl Inc コンピューター用ビデオラム(v−ram)
CN1120373A (zh) * 1993-03-17 1996-04-10 蔡卡得公司 基于随机存储存贮器(ram)的可配置阵列
JPH07141865A (ja) * 1993-06-28 1995-06-02 Mitsubishi Electric Corp 発振回路および半導体記憶装置
US5392251A (en) * 1993-07-13 1995-02-21 Micron Semiconductor, Inc. Controlling dynamic memory refresh cycle time
JP2836453B2 (ja) * 1993-08-26 1998-12-14 日本電気株式会社 半導体メモリの初段回路方式
JPH07182857A (ja) * 1993-12-24 1995-07-21 Toshiba Corp マイコンシステム
TW301750B (zh) * 1995-02-08 1997-04-01 Matsushita Electric Ind Co Ltd
US5712825A (en) * 1996-10-09 1998-01-27 International Business Machines Corporation Maintaining data integrity in DRAM while varying operating voltages
US5717644A (en) * 1996-10-09 1998-02-10 International Business Machines Corporation Apparatus for varying the refresh rate for a DRAM in response to variation in operating voltages and method thereof
US5890198A (en) * 1996-10-22 1999-03-30 Micron Technology, Inc. Intelligent refresh controller for dynamic memory devices
FR2775382B1 (fr) * 1998-02-25 2001-10-05 St Microelectronics Sa Procede de controle du rafraichissement d'un plan memoire d'un dispositif de memoire vive dynamique, et dispositif de memoire vive correspondant
JP4392740B2 (ja) * 2001-08-30 2010-01-06 株式会社ルネサステクノロジ 半導体記憶回路
US6515929B1 (en) * 2001-10-29 2003-02-04 Etron Technology, Inc. Partial refresh feature in pseudo SRAM
US7474579B2 (en) * 2006-12-20 2009-01-06 Spansion Llc Use of periodic refresh in medium retention memory arrays
KR101963457B1 (ko) * 2011-04-29 2019-03-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 기억 장치 및 그 구동 방법
KR20150138026A (ko) 2014-05-29 2015-12-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1774962C2 (zh) * 1967-06-07 1974-02-28 Motorola Inc., Franklin Park, Ill. (V.St.A.)
US3705392A (en) * 1971-09-07 1972-12-05 Texas Instruments Inc Mos dynamic memory
US4547867A (en) * 1980-10-01 1985-10-15 Intel Corporation Multiple bit dynamic random-access memory
JPS5956291A (en) * 1982-09-24 1984-03-31 Hitachi Ltd Mos storage device
JPS59227090A (en) * 1983-06-06 1984-12-20 Hitachi Ltd Nonvolatile memory device
JPH0459714B2 (zh) * 1983-10-14 1992-09-24 Hitachi Maikon Shisutemu Kk
JPS60242586A (en) * 1984-05-16 1985-12-02 Hitachi Ltd Semiconductor integrated circuit device
JPH0444836B2 (zh) * 1984-08-20 1992-07-22 Tokyo Shibaura Electric Co
JPS62154293A (en) * 1985-12-26 1987-07-09 Casio Comput Co Ltd Semiconductor storage device
JPS63121197A (en) * 1986-11-07 1988-05-25 Fujitsu Ltd Semiconductor memory device
JP2647527B2 (ja) * 1990-02-21 1997-08-27 シャープ株式会社 センス増幅回路

Also Published As

Publication number Publication date
DE4124904A1 (de) 1992-11-19
IT1250087B (it) 1995-03-30
JPH04344387A (en) 1992-11-30
GB9118624D0 (en) 1991-10-16
GB2255844A (en) 1992-11-18
FR2676578A1 (fr) 1992-11-20
US5278797A (en) 1994-01-11
KR920022293A (ko) 1992-12-19
ITRM910644D0 (it) 1991-08-29
ITRM910644A1 (it) 1992-12-17

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