IT1216464B - Dispositivo semiconduttore ad alta tensione di rottura. - Google Patents

Dispositivo semiconduttore ad alta tensione di rottura.

Info

Publication number
IT1216464B
IT1216464B IT8819563A IT1956388A IT1216464B IT 1216464 B IT1216464 B IT 1216464B IT 8819563 A IT8819563 A IT 8819563A IT 1956388 A IT1956388 A IT 1956388A IT 1216464 B IT1216464 B IT 1216464B
Authority
IT
Italy
Prior art keywords
semiconductor device
voltage semiconductor
high breaking
breaking voltage
voltage
Prior art date
Application number
IT8819563A
Other languages
English (en)
Italian (it)
Other versions
IT8819563A0 (it
Inventor
Akio Nakagawa
Original Assignee
Toshiba Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=26383357&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=IT1216464(B) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Toshiba Kk filed Critical Toshiba Kk
Publication of IT8819563A0 publication Critical patent/IT8819563A0/it
Application granted granted Critical
Publication of IT1216464B publication Critical patent/IT1216464B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H10D30/657—Lateral DMOS [LDMOS] FETs having substrates comprising insulating layers, e.g. SOI-LDMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/421—Insulated-gate bipolar transistors [IGBT] on insulating layers or insulating substrates, e.g. thin-film IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/251—Lateral thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/40—Thyristors with turn-on by field effect 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/60—Gate-turn-off devices 
    • H10D18/65—Gate-turn-off devices  with turn-off by field effect 
    • H10D18/655—Gate-turn-off devices  with turn-off by field effect  produced by insulated gate structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H10D30/0323—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon comprising monocrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H10D30/6717—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions the source and the drain regions being asymmetrical
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/112—Field plates comprising multiple field plate segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/115—Resistive field plates, e.g. semi-insulating field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/118—Electrodes comprising insulating layers having particular dielectric or electrostatic properties, e.g. having static charges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/411—PN diodes having planar bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/019—Manufacture or treatment of isolation regions comprising dielectric materials using epitaxial passivated integrated circuit [EPIC] processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W15/00—Highly-doped buried regions of integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W15/00—Highly-doped buried regions of integrated devices
    • H10W15/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/041—Manufacture or treatment of isolation regions comprising polycrystalline semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/061—Manufacture or treatment using SOI processes together with lateral isolation, e.g. combinations of SOI and shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/40—Isolation regions comprising polycrystalline semiconductor materials
IT8819563A 1987-02-26 1988-02-26 Dispositivo semiconduttore ad alta tensione di rottura. IT1216464B (it)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP4356487 1987-02-26
JP18942087 1987-07-29

Publications (2)

Publication Number Publication Date
IT8819563A0 IT8819563A0 (it) 1988-02-26
IT1216464B true IT1216464B (it) 1990-03-08

Family

ID=26383357

Family Applications (1)

Application Number Title Priority Date Filing Date
IT8819563A IT1216464B (it) 1987-02-26 1988-02-26 Dispositivo semiconduttore ad alta tensione di rottura.

Country Status (3)

Country Link
JP (1) JP2896141B2 (enExample)
DE (1) DE3806164A1 (enExample)
IT (1) IT1216464B (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5343067A (en) * 1987-02-26 1994-08-30 Kabushiki Kaisha Toshiba High breakdown voltage semiconductor device
DE3832750A1 (de) * 1988-09-27 1990-03-29 Asea Brown Boveri Leistungshalbleiterbauelement
EP0497577B1 (en) * 1991-01-31 2002-07-17 Kabushiki Kaisha Toshiba High breakdown voltage semiconductor device
US5072268A (en) * 1991-03-12 1991-12-10 Power Integrations, Inc. MOS gated bipolar transistor
US5386136A (en) * 1991-05-06 1995-01-31 Siliconix Incorporated Lightly-doped drain MOSFET with improved breakdown characteristics
US5374843A (en) * 1991-05-06 1994-12-20 Silinconix, Inc. Lightly-doped drain MOSFET with improved breakdown characteristics
JPH05335529A (ja) * 1992-05-28 1993-12-17 Fujitsu Ltd 半導体装置およびその製造方法
DE4233773C2 (de) * 1992-10-07 1996-09-19 Daimler Benz Ag Halbleiterstruktur für Halbleiterbauelemente mit hoher Durchbruchspannung
US5373183A (en) * 1993-04-28 1994-12-13 Harris Corporation Integrated circuit with improved reverse bias breakdown
DE4333661C1 (de) * 1993-10-01 1995-02-16 Daimler Benz Ag Halbleiterbauelement mit hoher Durchbruchsspannung
JP2755185B2 (ja) * 1994-11-07 1998-05-20 日本電気株式会社 Ｓｏｉ基板
JP3435930B2 (ja) * 1995-09-28 2003-08-11 株式会社デンソー 半導体装置及びその製造方法
SE9901575L (sv) * 1999-05-03 2000-11-04 Eklund Klas Haakan Halvledarelement
EP1684358A3 (en) * 1999-08-31 2008-04-23 Matsushita Electric Industrial Co., Ltd. High voltage SOI semiconductor device
JP2004207418A (ja) * 2002-12-25 2004-07-22 Nippon Inter Electronics Corp 半導体装置及びその製造方法
JP5069851B2 (ja) * 2005-09-26 2012-11-07 株式会社日立製作所 半導体装置
JP4767264B2 (ja) * 2008-01-15 2011-09-07 三菱電機株式会社 高耐圧半導体装置
JP2012191235A (ja) * 2012-06-07 2012-10-04 Rohm Co Ltd 半導体装置
US9040384B2 (en) * 2012-10-19 2015-05-26 Freescale Semiconductor, Inc. High voltage diode
JP7404600B2 (ja) * 2019-11-01 2023-12-26 株式会社東海理化電機製作所 半導体集積回路
JP7461188B2 (ja) * 2020-03-23 2024-04-03 株式会社東海理化電機製作所 半導体集積回路

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5939066A (ja) * 1982-08-27 1984-03-03 Hitachi Ltd 半導体集積回路
EP0109888A3 (en) * 1982-11-12 1987-05-20 FAIRCHILD CAMERA & INSTRUMENT CORPORATION Subsurface zener diode
JPS59217338A (ja) * 1983-05-26 1984-12-07 Hitachi Ltd 半導体装置

Also Published As

Publication number Publication date
JP2896141B2 (ja) 1999-05-31
IT8819563A0 (it) 1988-02-26
DE3806164A1 (de) 1988-09-08
JPH01103851A (ja) 1989-04-20
DE3806164C2 (enExample) 1991-03-14

Similar Documents

Publication Publication Date Title
IT8819563A0 (it) Dispositivo semiconduttore ad alta tensione di rottura.
DE3850855D1 (de) Halbleitervorrichtung.
DE3879543D1 (de) Integriertes hochspannungserzeugungssystem.
DE3574777D1 (de) Hochspannungsgeraet.
DE3872077D1 (de) Spannungsmesseinrichtung.
KR890004421A (ko) 반도체집적회로장치
DE3889354D1 (de) Halbleiteranordnung.
DE69010546D1 (de) Hochfrequenz-Halbleiteranordnung.
IT8883646A0 (it) Circuito logico cmos per alta tensione
TR24104A (tr) Yueksek gerilim icin gerilim transformatoerue.
IT9048059A0 (it) Dispositivo di contatto elettrico.
IT1240754B (it) Circuito misuratore di differenza di tensione.
DE58905356D1 (de) MOS-Halbleiterbauelement für hohe Sperrspannung.
DE69033794D1 (de) Halbleiteranordnung
IT8119502A0 (it) Dispositivo semiconduttore ad alta tensione di scarica.
DE59003052D1 (de) Halbleiterbauelement.
DE3867587D1 (de) Halbleiterschaltungsvorrichtung.
DE69031609D1 (de) Halbleiteranordnung
DE69024031D1 (de) Hochleistungshalbleiterbauelement.
DE69029226D1 (de) Halbleiteranordnung
IT1243934B (it) Circuito integrato ad alta tensione.
KR890004438A (ko) 반도체 장치
DE59106008D1 (de) Hochspannungsgerät.
DE3871908D1 (de) Lateraler hochspannungstransistor.
IT1228167B (it) Dispositivo di contatto.

Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970227