IT1151209B - Procedimento per la fabbricazione di un dispositivo a semiconduttori - Google Patents

Procedimento per la fabbricazione di un dispositivo a semiconduttori

Info

Publication number
IT1151209B
IT1151209B IT21430/82A IT2143082A IT1151209B IT 1151209 B IT1151209 B IT 1151209B IT 21430/82 A IT21430/82 A IT 21430/82A IT 2143082 A IT2143082 A IT 2143082A IT 1151209 B IT1151209 B IT 1151209B
Authority
IT
Italy
Prior art keywords
procedure
manufacture
semiconductor device
semiconductor
Prior art date
Application number
IT21430/82A
Other languages
English (en)
Italian (it)
Other versions
IT8221430A0 (it
Inventor
Jean Serge Deslauriers
Hyman Joseph Levinstein
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of IT8221430A0 publication Critical patent/IT8221430A0/it
Application granted granted Critical
Publication of IT1151209B publication Critical patent/IT1151209B/it

Links

Classifications

    • H10P50/268—
    • H10D64/01312—
IT21430/82A 1981-05-22 1982-05-21 Procedimento per la fabbricazione di un dispositivo a semiconduttori IT1151209B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US26643381A 1981-05-22 1981-05-22

Publications (2)

Publication Number Publication Date
IT8221430A0 IT8221430A0 (it) 1982-05-21
IT1151209B true IT1151209B (it) 1986-12-17

Family

ID=23014579

Family Applications (1)

Application Number Title Priority Date Filing Date
IT21430/82A IT1151209B (it) 1981-05-22 1982-05-21 Procedimento per la fabbricazione di un dispositivo a semiconduttori

Country Status (8)

Country Link
JP (1) JPS57198633A (OSRAM)
BE (1) BE893251A (OSRAM)
CA (1) CA1202597A (OSRAM)
DE (1) DE3219284A1 (OSRAM)
FR (1) FR2506519B1 (OSRAM)
GB (1) GB2098931B (OSRAM)
IT (1) IT1151209B (OSRAM)
NL (1) NL8202103A (OSRAM)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3216823A1 (de) * 1982-05-05 1983-11-10 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von strukturen von aus metallsilizid und polysilizium bestehenden doppelschichten auf integrierte halbleiterschaltungen enthaltenden substraten durch reaktives ionenaetzen
US4414057A (en) * 1982-12-03 1983-11-08 Inmos Corporation Anisotropic silicide etching process
DE3315719A1 (de) * 1983-04-29 1984-10-31 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von strukturen von aus metallsiliziden bzw. silizid-polysilizium bestehenden doppelschichten fuer integrierte halbleiterschaltungen durch reaktives ionenaetzen
US4528066A (en) * 1984-07-06 1985-07-09 Ibm Corporation Selective anisotropic reactive ion etching process for polysilicide composite structures
NL8500771A (nl) * 1985-03-18 1986-10-16 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting waarbij een op een laag siliciumoxide aanwezige dubbellaag - bestaande uit poly-si en een silicide - in een plasma wordt geetst.
WO1987000345A1 (en) * 1985-06-28 1987-01-15 American Telephone & Telegraph Company Procedure for fabricating devices involving dry etching
DE4114741C2 (de) * 1990-07-04 1998-11-12 Mitsubishi Electric Corp Verfahren zur Bildung einer Leiterbahn auf einem Halbleitersubstrat
US6177337B1 (en) * 1998-01-06 2001-01-23 International Business Machines Corporation Method of reducing metal voids in semiconductor device interconnection

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5519873A (en) * 1978-07-28 1980-02-12 Mitsubishi Electric Corp Forming method of metallic layer pattern for semiconductor

Also Published As

Publication number Publication date
GB2098931A (en) 1982-12-01
IT8221430A0 (it) 1982-05-21
GB2098931B (en) 1985-02-06
FR2506519A1 (fr) 1982-11-26
JPS57198633A (en) 1982-12-06
DE3219284A1 (de) 1982-12-16
BE893251A (fr) 1982-09-16
FR2506519B1 (fr) 1985-07-26
DE3219284C2 (OSRAM) 1989-08-10
NL8202103A (nl) 1982-12-16
CA1202597A (en) 1986-04-01

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Legal Events

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TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970526