IN2015KN00387A - - Google Patents
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- Publication number
- IN2015KN00387A IN2015KN00387A IN387KON2015A IN2015KN00387A IN 2015KN00387 A IN2015KN00387 A IN 2015KN00387A IN 387KON2015 A IN387KON2015 A IN 387KON2015A IN 2015KN00387 A IN2015KN00387 A IN 2015KN00387A
- Authority
- IN
- India
- Prior art keywords
- leds
- top electrodes
- electrically connected
- led
- series
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR20120099263 | 2012-09-07 | ||
| KR20120101716 | 2012-09-13 | ||
| KR1020130088712A KR101893579B1 (ko) | 2012-09-07 | 2013-07-26 | 웨이퍼 레벨의 발광 다이오드 어레이 |
| KR1020130088714A KR101893578B1 (ko) | 2012-09-13 | 2013-07-26 | 웨이퍼 레벨의 발광 다이오드 어레이 |
| PCT/KR2013/007105 WO2014038794A1 (ko) | 2012-09-07 | 2013-08-06 | 웨이퍼 레벨의 발광 다이오드 어레이 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IN2015KN00387A true IN2015KN00387A (zh) | 2015-07-10 |
Family
ID=50237367
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IN387KON2015 IN2015KN00387A (zh) | 2012-09-07 | 2013-08-06 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9412922B2 (zh) |
| CN (3) | CN104620399B (zh) |
| DE (2) | DE202013012470U1 (zh) |
| IN (1) | IN2015KN00387A (zh) |
| TW (1) | TWI602324B (zh) |
| WO (1) | WO2014038794A1 (zh) |
Families Citing this family (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10388690B2 (en) | 2012-08-07 | 2019-08-20 | Seoul Viosys Co., Ltd. | Wafer level light-emitting diode array |
| US10804316B2 (en) * | 2012-08-07 | 2020-10-13 | Seoul Viosys Co., Ltd. | Wafer level light-emitting diode array |
| US9318529B2 (en) * | 2012-09-07 | 2016-04-19 | Seoul Viosys Co., Ltd. | Wafer level light-emitting diode array |
| US9412911B2 (en) | 2013-07-09 | 2016-08-09 | The Silanna Group Pty Ltd | Optical tuning of light emitting semiconductor junctions |
| US9847457B2 (en) * | 2013-07-29 | 2017-12-19 | Seoul Viosys Co., Ltd. | Light emitting diode, method of fabricating the same and LED module having the same |
| WO2015181648A1 (en) | 2014-05-27 | 2015-12-03 | The Silanna Group Pty Limited | An optoelectronic device |
| US11322643B2 (en) | 2014-05-27 | 2022-05-03 | Silanna UV Technologies Pte Ltd | Optoelectronic device |
| JP6986349B2 (ja) | 2014-05-27 | 2021-12-22 | シランナ・ユー・ブイ・テクノロジーズ・プライベート・リミテッドSilanna Uv Technologies Pte Ltd | ｎ型超格子及びｐ型超格子を備える電子デバイス |
| JP6636459B2 (ja) | 2014-05-27 | 2020-01-29 | シランナ・ユー・ブイ・テクノロジーズ・プライベート・リミテッドＳｉｌａｎｎａ Ｕｖ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ｐｔｅ Ｌｔｄ | 半導体構造と超格子とを用いた高度電子デバイス |
| US9728698B2 (en) | 2014-06-03 | 2017-08-08 | Seoul Viosys Co., Ltd. | Light emitting device package having improved heat dissipation efficiency |
| KR20150139194A (ko) * | 2014-06-03 | 2015-12-11 | 서울바이오시스 주식회사 | 발광 다이오드 및 그 제조 방법 |
| US9577171B2 (en) | 2014-06-03 | 2017-02-21 | Seoul Viosys Co., Ltd. | Light emitting device package having improved heat dissipation efficiency |
| KR102197082B1 (ko) * | 2014-06-16 | 2020-12-31 | 엘지이노텍 주식회사 | 발광 소자 및 이를 포함하는 발광소자 패키지 |
| DE112016000731T5 (de) * | 2015-02-13 | 2017-12-21 | Seoul Viosys Co., Ltd. | Lichtaussendeelement und leuchtdiode |
| CN106486490B (zh) * | 2015-08-31 | 2021-07-23 | 吴昭武 | 新型led面板组件、3d面板组件及3d显示屏 |
| DE102015114662A1 (de) | 2015-09-02 | 2017-03-02 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Halbleiter-Bauteils, optoelektronisches Halbleiter-Bauteil, Temporärer Träger |
| CN111987209A (zh) * | 2015-11-18 | 2020-11-24 | 晶元光电股份有限公司 | 发光元件 |
| JP6354799B2 (ja) * | 2015-12-25 | 2018-07-11 | 日亜化学工業株式会社 | 発光素子 |
| WO2017145026A1 (en) | 2016-02-23 | 2017-08-31 | Silanna UV Technologies Pte Ltd | Resonant optical cavity light emitting device |
| US10418517B2 (en) | 2016-02-23 | 2019-09-17 | Silanna UV Technologies Pte Ltd | Resonant optical cavity light emitting device |
| KR102530760B1 (ko) | 2016-07-18 | 2023-05-11 | 삼성전자주식회사 | 반도체 발광소자 |
| CN106206903B (zh) * | 2016-10-10 | 2018-11-27 | 江苏新广联半导体有限公司 | 一种具有高可靠性反射电极结构的led芯片的制作方法 |
| US10121932B1 (en) * | 2016-11-30 | 2018-11-06 | The United States Of America As Represented By The Secretary Of The Navy | Tunable graphene light-emitting device |
| KR20180065700A (ko) | 2016-12-08 | 2018-06-18 | 삼성전자주식회사 | 발광 소자 |
| KR102549171B1 (ko) | 2017-07-12 | 2023-06-30 | 삼성전자주식회사 | 발광소자 패키지 및 이를 이용한 디스플레이 장치 |
| US10964851B2 (en) * | 2017-08-30 | 2021-03-30 | SemiLEDs Optoelectronics Co., Ltd. | Single light emitting diode (LED) structure |
| CN108428770B (zh) * | 2018-04-19 | 2021-03-23 | 北京大学 | 一种共面波导结构微米led的制备方法 |
| US10622514B1 (en) | 2018-10-15 | 2020-04-14 | Silanna UV Technologies Pte Ltd | Resonant optical cavity light emitting device |
| US11302248B2 (en) | 2019-01-29 | 2022-04-12 | Osram Opto Semiconductors Gmbh | U-led, u-led device, display and method for the same |
| US11156759B2 (en) | 2019-01-29 | 2021-10-26 | Osram Opto Semiconductors Gmbh | μ-LED, μ-LED device, display and method for the same |
| US11610868B2 (en) | 2019-01-29 | 2023-03-21 | Osram Opto Semiconductors Gmbh | μ-LED, μ-LED device, display and method for the same |
| US11271143B2 (en) | 2019-01-29 | 2022-03-08 | Osram Opto Semiconductors Gmbh | μ-LED, μ-LED device, display and method for the same |
| US11538852B2 (en) | 2019-04-23 | 2022-12-27 | Osram Opto Semiconductors Gmbh | μ-LED, μ-LED device, display and method for the same |
| US20220231193A1 (en) * | 2019-04-23 | 2022-07-21 | Osram Opto Semiconductors Gmbh | Led module, led display module and method of manufacturing the same |
| KR20210057299A (ko) * | 2019-11-12 | 2021-05-21 | 삼성전자주식회사 | 반도체 발광 소자 및 반도체 발광 소자 패키지 |
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| JPH05196980A (ja) * | 1991-11-18 | 1993-08-06 | Ricoh Co Ltd | 光排他的論理和演算素子 |
| JP2000323750A (ja) * | 1999-05-10 | 2000-11-24 | Hitachi Cable Ltd | 発光ダイオードアレイ |
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| US6573537B1 (en) | 1999-12-22 | 2003-06-03 | Lumileds Lighting, U.S., Llc | Highly reflective ohmic contacts to III-nitride flip-chip LEDs |
| JP2002009331A (ja) * | 2000-06-20 | 2002-01-11 | Hitachi Cable Ltd | 発光ダイオードアレイ |
| US6547249B2 (en) * | 2001-03-29 | 2003-04-15 | Lumileds Lighting U.S., Llc | Monolithic series/parallel led arrays formed on highly resistive substrates |
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| US7009199B2 (en) * | 2002-10-22 | 2006-03-07 | Cree, Inc. | Electronic devices having a header and antiparallel connected light emitting diodes for producing light from AC current |
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| US8476648B2 (en) * | 2005-06-22 | 2013-07-02 | Seoul Opto Device Co., Ltd. | Light emitting device and method of manufacturing the same |
| KR100690323B1 (ko) * | 2006-03-08 | 2007-03-12 | 서울옵토디바이스주식회사 | 배선들을 갖는 교류용 발광 다이오드 및 그것을 제조하는방법 |
| KR101158071B1 (ko) | 2005-09-28 | 2012-06-22 | 서울옵토디바이스주식회사 | 다수의 셀이 결합된 발광 소자 및 이의 제조 방법 |
| US8581274B2 (en) * | 2006-05-01 | 2013-11-12 | Mitsubishi Chemical Corporation | Integrated semiconductor light-emitting device and its manufacturing method |
| JP2007305708A (ja) * | 2006-05-10 | 2007-11-22 | Rohm Co Ltd | 半導体発光素子アレイおよびこれを用いた照明用器具 |
| KR101115535B1 (ko) | 2006-06-30 | 2012-03-08 | 서울옵토디바이스주식회사 | 확장된 금속 반사층을 갖는 플립 본딩형 발광다이오드 및그 제조방법 |
| KR100974923B1 (ko) * | 2007-03-19 | 2010-08-10 | 서울옵토디바이스주식회사 | 발광 다이오드 |
| JP5032171B2 (ja) * | 2007-03-26 | 2012-09-26 | 株式会社東芝 | 半導体発光素子およびその製造方法ならびに発光装置 |
| US8536584B2 (en) * | 2007-11-14 | 2013-09-17 | Cree, Inc. | High voltage wire bond free LEDS |
| DE102008011848A1 (de) * | 2008-02-29 | 2009-09-03 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen |
| JP5229034B2 (ja) * | 2008-03-28 | 2013-07-03 | サンケン電気株式会社 | 発光装置 |
| TWI493748B (zh) | 2008-08-29 | 2015-07-21 | Nichia Corp | Semiconductor light emitting elements and semiconductor light emitting devices |
| JP5123269B2 (ja) * | 2008-09-30 | 2013-01-23 | ソウル オプト デバイス カンパニー リミテッド | 発光素子及びその製造方法 |
| KR20100076083A (ko) * | 2008-12-17 | 2010-07-06 | 서울반도체 주식회사 | 복수개의 발광셀들을 갖는 발광 다이오드 및 그것을 제조하는 방법 |
| JP5336594B2 (ja) * | 2009-06-15 | 2013-11-06 | パナソニック株式会社 | 半導体発光装置、発光モジュール、および照明装置 |
| US9324691B2 (en) * | 2009-10-20 | 2016-04-26 | Epistar Corporation | Optoelectronic device |
| KR101055768B1 (ko) * | 2009-12-14 | 2011-08-11 | 서울옵토디바이스주식회사 | 전극패드들을 갖는 발광 다이오드 |
| KR101654340B1 (ko) * | 2009-12-28 | 2016-09-06 | 서울바이오시스 주식회사 | 발광 다이오드 |
| US9070851B2 (en) * | 2010-09-24 | 2015-06-30 | Seoul Semiconductor Co., Ltd. | Wafer-level light emitting diode package and method of fabricating the same |
| KR101138952B1 (ko) * | 2010-09-24 | 2012-04-25 | 서울옵토디바이스주식회사 | 복수개의 발광셀들을 갖는 웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법 |
| CN102479913A (zh) * | 2010-11-29 | 2012-05-30 | 上海蓝宝光电材料有限公司 | 一种高效高压垂直通孔键合式led芯片及其制作方法 |
-
2013
- 2013-08-06 DE DE202013012470.9U patent/DE202013012470U1/de not_active Expired - Lifetime
- 2013-08-06 IN IN387KON2015 patent/IN2015KN00387A/en unknown
- 2013-08-06 CN CN201380046853.2A patent/CN104620399B/zh active Active
- 2013-08-06 CN CN201811346014.3A patent/CN109638032B/zh active Active
- 2013-08-06 WO PCT/KR2013/007105 patent/WO2014038794A1/ko active Application Filing
- 2013-08-06 CN CN202010064109.7A patent/CN111223973B/zh active Active
- 2013-08-06 DE DE201311003887 patent/DE112013003887T5/de active Pending
- 2013-08-06 US US14/426,723 patent/US9412922B2/en active Active
- 2013-08-07 TW TW102128318A patent/TWI602324B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| DE202013012470U1 (de) | 2017-01-12 |
| US9412922B2 (en) | 2016-08-09 |
| US20150280086A1 (en) | 2015-10-01 |
| DE112013003887T5 (de) | 2015-05-07 |
| CN111223973B (zh) | 2023-08-22 |
| CN104620399A (zh) | 2015-05-13 |
| CN109638032A (zh) | 2019-04-16 |
| CN111223973A (zh) | 2020-06-02 |
| CN109638032B (zh) | 2023-10-27 |
| CN104620399B (zh) | 2020-02-21 |
| TWI602324B (zh) | 2017-10-11 |
| TW201414024A (zh) | 2014-04-01 |
| WO2014038794A1 (ko) | 2014-03-13 |
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