WO2012057482A3 - 수직형 발광 다이오드 셀 어레이 및 그의 제조 방법 - Google Patents

수직형 발광 다이오드 셀 어레이 및 그의 제조 방법 Download PDF

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Publication number
WO2012057482A3
WO2012057482A3 PCT/KR2011/007942 KR2011007942W WO2012057482A3 WO 2012057482 A3 WO2012057482 A3 WO 2012057482A3 KR 2011007942 W KR2011007942 W KR 2011007942W WO 2012057482 A3 WO2012057482 A3 WO 2012057482A3
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Prior art keywords
vertical
cell array
type light
manufacturing same
conductive patterns
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PCT/KR2011/007942
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English (en)
French (fr)
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WO2012057482A4 (ko
WO2012057482A2 (ko
Inventor
김근호
김윤근
최원진
김극
송정섭
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일진머티리얼즈 주식회사
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Publication of WO2012057482A2 publication Critical patent/WO2012057482A2/ko
Publication of WO2012057482A3 publication Critical patent/WO2012057482A3/ko
Publication of WO2012057482A4 publication Critical patent/WO2012057482A4/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)

Abstract

본 발명은 LED 셀 어레이 및 그의 제조 방법에 관한 것으로, 절연층을 구비하는 지지 기판과, 절연층 상에 서로 이격되어 마련되는 복수의 제 1 전도성 패턴과, 복수의 제 1 전도성 패턴 상에 각각 마련되고, P형 반도체층, 활성층 및 N형 반도체층을 구비하는 복수의 수직형 단위 발광 셀과, 복수의 제 1 전도성 패턴과 이웃하는 복수의 수직형 단위 발광 셀을 전기적으로 연결시키는 복수의 제 2 전도성 패턴을 포함하는 수직형 LED 셀 어레이 및 그의 제조 방법이 제시된다.
PCT/KR2011/007942 2010-10-25 2011-10-24 수직형 발광 다이오드 셀 어레이 및 그의 제조 방법 WO2012057482A2 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20100103975 2010-10-25
KR10-2010-0103975 2010-10-25

Publications (3)

Publication Number Publication Date
WO2012057482A2 WO2012057482A2 (ko) 2012-05-03
WO2012057482A3 true WO2012057482A3 (ko) 2012-07-26
WO2012057482A4 WO2012057482A4 (ko) 2012-12-06

Family

ID=45994524

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2011/007942 WO2012057482A2 (ko) 2010-10-25 2011-10-24 수직형 발광 다이오드 셀 어레이 및 그의 제조 방법

Country Status (2)

Country Link
KR (1) KR101281081B1 (ko)
WO (1) WO2012057482A2 (ko)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101362516B1 (ko) * 2013-02-07 2014-02-14 한국과학기술원 플렉서블 수직형 발광다이오드 및 그 제조방법
WO2015022013A1 (en) * 2013-08-13 2015-02-19 Osram Opto Semiconductors Gmbh Semiconductor wafer, optoelectronic component and method for producing an optoelectronic component
KR101616615B1 (ko) * 2014-04-16 2016-05-12 박진성 웨이퍼 레벨 칩 스케일 발광다이오드 패키지
CN105336706A (zh) * 2014-08-06 2016-02-17 晶能光电（江西）有限公司 一种高压led芯片的制备方法
US9343633B1 (en) 2014-10-31 2016-05-17 Mikro Mesa Technology Co., Ltd. Light-emitting diode lighting device
KR102299992B1 (ko) 2018-04-25 2021-09-10 삼성디스플레이 주식회사 발광 장치, 이를 구비한 표시 장치, 및 그의 제조 방법
US10886447B2 (en) * 2018-09-14 2021-01-05 Seoul Viosys Co., Ltd. Light emitting device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20090036374A (ko) * 2007-10-09 2009-04-14 엘지전자 주식회사 발광 셀 및 그 제조방법
KR20100016401A (ko) * 2007-05-04 2010-02-12 오스람 옵토 세미컨덕터스 게엠베하 반도체칩 및 반도체칩의 제조 방법
US20100117056A1 (en) * 2003-07-16 2010-05-13 Hideo Nagai Semiconductor light emitting device, method of manufacturing the same, and lighting apparatus and display apparatus using the same
US20100213491A1 (en) * 2008-07-16 2010-08-26 Chih-Chiang Lu Light-emitting device with narrow dominant wavelength distribution and method of making the same
KR20100108907A (ko) * 2009-03-31 2010-10-08 서울반도체 주식회사 복수개의 발광셀들을 갖는 발광 소자

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100691264B1 (ko) * 2005-07-20 2007-03-12 삼성전기주식회사 수직구조 질화물 반도체 발광소자
KR101272704B1 (ko) * 2006-09-27 2013-06-10 서울옵토디바이스주식회사 ＡｌＩｎＧａＰ 활성층을 갖는 발광 다이오드 및 그것을제조하는 방법
KR101337617B1 (ko) * 2006-11-08 2013-12-06 서울바이오시스 주식회사 오믹 전극 패턴을 갖는 수직형 발광 다이오드 및 그제조방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100117056A1 (en) * 2003-07-16 2010-05-13 Hideo Nagai Semiconductor light emitting device, method of manufacturing the same, and lighting apparatus and display apparatus using the same
KR20100016401A (ko) * 2007-05-04 2010-02-12 오스람 옵토 세미컨덕터스 게엠베하 반도체칩 및 반도체칩의 제조 방법
KR20090036374A (ko) * 2007-10-09 2009-04-14 엘지전자 주식회사 발광 셀 및 그 제조방법
US20100213491A1 (en) * 2008-07-16 2010-08-26 Chih-Chiang Lu Light-emitting device with narrow dominant wavelength distribution and method of making the same
KR20100108907A (ko) * 2009-03-31 2010-10-08 서울반도체 주식회사 복수개의 발광셀들을 갖는 발광 소자

Also Published As

Publication number Publication date
KR20120042699A (ko) 2012-05-03
WO2012057482A4 (ko) 2012-12-06
WO2012057482A2 (ko) 2012-05-03
KR101281081B1 (ko) 2013-07-09

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