IN2015KN00387A - - Google Patents

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Publication number
IN2015KN00387A
IN2015KN00387A IN387KON2015A IN2015KN00387A IN 2015KN00387 A IN2015KN00387 A IN 2015KN00387A IN 387KON2015 A IN387KON2015 A IN 387KON2015A IN 2015KN00387 A IN2015KN00387 A IN 2015KN00387A
Authority
IN
India
Prior art keywords
leds
top electrodes
electrically connected
led
series
Prior art date
Application number
Other languages
English (en)
Inventor
Jong Min Jang
Jong Hyeon Chae
Joon Sup Lee
Dae Woong Suh
Hyun A Kim
Won Young Roh
Min Woo Kang
Original Assignee
Seoul Viosys Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020130088714A external-priority patent/KR101893578B1/ko
Priority claimed from KR1020130088712A external-priority patent/KR101893579B1/ko
Application filed by Seoul Viosys Co Ltd filed Critical Seoul Viosys Co Ltd
Publication of IN2015KN00387A publication Critical patent/IN2015KN00387A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings

Landscapes

  • Led Devices (AREA)
  • Led Device Packages (AREA)
IN387KON2015 2012-09-07 2013-08-06 IN2015KN00387A (enExample)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
KR20120099263 2012-09-07
KR20120101716 2012-09-13
KR1020130088714A KR101893578B1 (ko) 2012-09-13 2013-07-26 웨이퍼 레벨의 발광 다이오드 어레이
KR1020130088712A KR101893579B1 (ko) 2012-09-07 2013-07-26 웨이퍼 레벨의 발광 다이오드 어레이
PCT/KR2013/007105 WO2014038794A1 (ko) 2012-09-07 2013-08-06 웨이퍼 레벨의 발광 다이오드 어레이

Publications (1)

Publication Number Publication Date
IN2015KN00387A true IN2015KN00387A (enExample) 2015-07-10

Family

ID=50237367

Family Applications (1)

Application Number Title Priority Date Filing Date
IN387KON2015 IN2015KN00387A (enExample) 2012-09-07 2013-08-06

Country Status (6)

Country Link
US (1) US9412922B2 (enExample)
CN (3) CN104620399B (enExample)
DE (2) DE202013012470U1 (enExample)
IN (1) IN2015KN00387A (enExample)
TW (1) TWI602324B (enExample)
WO (1) WO2014038794A1 (enExample)

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10804316B2 (en) * 2012-08-07 2020-10-13 Seoul Viosys Co., Ltd. Wafer level light-emitting diode array
US9318529B2 (en) * 2012-09-07 2016-04-19 Seoul Viosys Co., Ltd. Wafer level light-emitting diode array
US10388690B2 (en) 2012-08-07 2019-08-20 Seoul Viosys Co., Ltd. Wafer level light-emitting diode array
US9412911B2 (en) 2013-07-09 2016-08-09 The Silanna Group Pty Ltd Optical tuning of light emitting semiconductor junctions
US9847457B2 (en) * 2013-07-29 2017-12-19 Seoul Viosys Co., Ltd. Light emitting diode, method of fabricating the same and LED module having the same
JP6986349B2 (ja) 2014-05-27 2021-12-22 シランナ・ユー・ブイ・テクノロジーズ・プライベート・リミテッドSilanna Uv Technologies Pte Ltd ｎ型超格子及びｐ型超格子を備える電子デバイス
CN106537617B (zh) 2014-05-27 2019-04-16 斯兰纳Uv科技有限公司 使用半导体结构和超晶格的高级电子装置结构
US11322643B2 (en) 2014-05-27 2022-05-03 Silanna UV Technologies Pte Ltd Optoelectronic device
KR102439708B1 (ko) 2014-05-27 2022-09-02 실라나 유브이 테크놀로지스 피티이 리미티드 광전자 디바이스
US9577171B2 (en) 2014-06-03 2017-02-21 Seoul Viosys Co., Ltd. Light emitting device package having improved heat dissipation efficiency
KR20150139194A (ko) * 2014-06-03 2015-12-11 서울바이오시스 주식회사 발광 다이오드 및 그 제조 방법
US9728698B2 (en) 2014-06-03 2017-08-08 Seoul Viosys Co., Ltd. Light emitting device package having improved heat dissipation efficiency
KR102197082B1 (ko) 2014-06-16 2020-12-31 엘지이노텍 주식회사 발광 소자 및 이를 포함하는 발광소자 패키지
CN110061027B (zh) * 2015-02-13 2024-01-19 首尔伟傲世有限公司 发光元件
CN106486490B (zh) * 2015-08-31 2021-07-23 吴昭武 新型led面板组件、3d面板组件及3d显示屏
DE102015114662A1 (de) 2015-09-02 2017-03-02 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiter-Bauteils, optoelektronisches Halbleiter-Bauteil, Temporärer Träger
CN111987210A (zh) * 2015-11-18 2020-11-24 晶元光电股份有限公司 发光元件
JP6354799B2 (ja) * 2015-12-25 2018-07-11 日亜化学工業株式会社 発光素子
WO2017145026A1 (en) 2016-02-23 2017-08-31 Silanna UV Technologies Pte Ltd Resonant optical cavity light emitting device
US10418517B2 (en) 2016-02-23 2019-09-17 Silanna UV Technologies Pte Ltd Resonant optical cavity light emitting device
KR102530760B1 (ko) 2016-07-18 2023-05-11 삼성전자주식회사 반도체 발광소자
CN106206903B (zh) * 2016-10-10 2018-11-27 江苏新广联半导体有限公司 一种具有高可靠性反射电极结构的led芯片的制作方法
US10121932B1 (en) * 2016-11-30 2018-11-06 The United States Of America As Represented By The Secretary Of The Navy Tunable graphene light-emitting device
KR102724660B1 (ko) 2016-12-08 2024-10-31 삼성전자주식회사 발광 소자
KR102549171B1 (ko) 2017-07-12 2023-06-30 삼성전자주식회사 발광소자 패키지 및 이를 이용한 디스플레이 장치
US10964851B2 (en) 2017-08-30 2021-03-30 SemiLEDs Optoelectronics Co., Ltd. Single light emitting diode (LED) structure
CN108428770B (zh) * 2018-04-19 2021-03-23 北京大学 一种共面波导结构微米led的制备方法
DE102018111227A1 (de) * 2018-05-09 2019-11-14 Osram Opto Semiconductors Gmbh Verfahren zum Durchtrennen eines epitaktisch gewachsenen Halbleiterkörpers und Halbleiterchip
FR3083002B1 (fr) * 2018-06-20 2020-07-31 Aledia Dispositif optoelectronique comprenant une matrice de diodes
US10622514B1 (en) 2018-10-15 2020-04-14 Silanna UV Technologies Pte Ltd Resonant optical cavity light emitting device
US11302248B2 (en) 2019-01-29 2022-04-12 Osram Opto Semiconductors Gmbh U-led, u-led device, display and method for the same
US11156759B2 (en) 2019-01-29 2021-10-26 Osram Opto Semiconductors Gmbh μ-LED, μ-LED device, display and method for the same
US11271143B2 (en) 2019-01-29 2022-03-08 Osram Opto Semiconductors Gmbh μ-LED, μ-LED device, display and method for the same
JP7558175B2 (ja) 2019-01-29 2024-09-30 エイエムエス－オスラム インターナショナル ゲーエムベーハー ビデオウォール、ドライバ回路、駆動制御回路およびそれらに関する方法
US11610868B2 (en) 2019-01-29 2023-03-21 Osram Opto Semiconductors Gmbh μ-LED, μ-LED device, display and method for the same
US12261256B2 (en) 2019-02-11 2025-03-25 Osram Opto Semiconductors Gmbh Optoelectronic component, optoelectronic arrangement and method
US11538852B2 (en) 2019-04-23 2022-12-27 Osram Opto Semiconductors Gmbh μ-LED, μ-LED device, display and method for the same
KR20260016601A (ko) 2019-04-23 2026-02-03 에이엠에스-오스람 인터내셔널 게엠베하 Led 모듈, led 디스플레이 모듈 및 그 제조 방법
CN114303236A (zh) 2019-05-13 2022-04-08 奥斯兰姆奥普托半导体股份有限两合公司 多芯片承载结构
CN114144727A (zh) 2019-05-23 2022-03-04 奥斯兰姆奥普托半导体股份有限两合公司 照明装置、导光装置和方法
DE112020004395A5 (de) 2019-09-20 2022-06-02 Osram Opto Semiconductors Gmbh Optoelektronisches bauelement, optoelektronische anordnung und verfahren
KR102764501B1 (ko) * 2019-11-12 2025-02-07 삼성전자주식회사 반도체 발광 소자 및 반도체 발광 소자 패키지
KR102730959B1 (ko) * 2020-04-24 2024-11-20 삼성디스플레이 주식회사 화소, 이를 구비한 표시 장치, 및 그의 제조 방법
CN113410359B (zh) * 2021-06-17 2022-07-26 厦门三安光电有限公司 一种发光二极管芯片、发光装置及显示装置

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05196980A (ja) * 1991-11-18 1993-08-06 Ricoh Co Ltd 光排他的論理和演算素子
JP2000323750A (ja) 1999-05-10 2000-11-24 Hitachi Cable Ltd 発光ダイオードアレイ
JP3659098B2 (ja) 1999-11-30 2005-06-15 日亜化学工業株式会社 窒化物半導体発光素子
US6573537B1 (en) 1999-12-22 2003-06-03 Lumileds Lighting, U.S., Llc Highly reflective ohmic contacts to III-nitride flip-chip LEDs
JP2002009331A (ja) * 2000-06-20 2002-01-11 Hitachi Cable Ltd 発光ダイオードアレイ
US6547249B2 (en) * 2001-03-29 2003-04-15 Lumileds Lighting U.S., Llc Monolithic series/parallel led arrays formed on highly resistive substrates
US7095050B2 (en) * 2002-02-28 2006-08-22 Midwest Research Institute Voltage-matched, monolithic, multi-band-gap devices
EP2149905A3 (en) * 2002-08-29 2014-05-07 Seoul Semiconductor Co., Ltd. Light-emitting device having light-emitting diodes
US7009199B2 (en) * 2002-10-22 2006-03-07 Cree, Inc. Electronic devices having a header and antiparallel connected light emitting diodes for producing light from AC current
EP2398074B1 (en) * 2003-07-16 2014-09-03 Panasonic Corporation Semiconductor light emitting device, method of manufacturing the same, and lighting apparatus and display apparatus using the same
US7285801B2 (en) * 2004-04-02 2007-10-23 Lumination, Llc LED with series-connected monolithically integrated mesas
KR100690323B1 (ko) * 2006-03-08 2007-03-12 서울옵토디바이스주식회사 배선들을 갖는 교류용 발광 다이오드 및 그것을 제조하는방법
EP2161752B1 (en) * 2005-06-22 2015-08-12 Seoul Viosys Co., Ltd Light-emitting device
KR101158071B1 (ko) 2005-09-28 2012-06-22 서울옵토디바이스주식회사 다수의 셀이 결합된 발광 소자 및 이의 제조 방법
WO2007126093A1 (ja) * 2006-05-01 2007-11-08 Mitsubishi Chemical Corporation 集積型半導体発光装置およびその製造方法
JP2007305708A (ja) * 2006-05-10 2007-11-22 Rohm Co Ltd 半導体発光素子アレイおよびこれを用いた照明用器具
KR101115535B1 (ko) 2006-06-30 2012-03-08 서울옵토디바이스주식회사 확장된 금속 반사층을 갖는 플립 본딩형 발광다이오드 및그 제조방법
KR100974923B1 (ko) * 2007-03-19 2010-08-10 서울옵토디바이스주식회사 발광 다이오드
JP5032171B2 (ja) * 2007-03-26 2012-09-26 株式会社東芝 半導体発光素子およびその製造方法ならびに発光装置
US8536584B2 (en) * 2007-11-14 2013-09-17 Cree, Inc. High voltage wire bond free LEDS
DE102008011848A1 (de) * 2008-02-29 2009-09-03 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen
JP5229034B2 (ja) * 2008-03-28 2013-07-03 サンケン電気株式会社 発光装置
TWI493748B (zh) 2008-08-29 2015-07-21 日亞化學工業股份有限公司 Semiconductor light emitting elements and semiconductor light emitting devices
JP5123269B2 (ja) * 2008-09-30 2013-01-23 ソウル オプト デバイス カンパニー リミテッド 発光素子及びその製造方法
KR20100076083A (ko) * 2008-12-17 2010-07-06 서울반도체 주식회사 복수개의 발광셀들을 갖는 발광 다이오드 및 그것을 제조하는 방법
WO2010146783A1 (ja) * 2009-06-15 2010-12-23 パナソニック株式会社 半導体発光装置、発光モジュール、および照明装置
US9324691B2 (en) * 2009-10-20 2016-04-26 Epistar Corporation Optoelectronic device
KR101055768B1 (ko) * 2009-12-14 2011-08-11 서울옵토디바이스주식회사 전극패드들을 갖는 발광 다이오드
KR101654340B1 (ko) * 2009-12-28 2016-09-06 서울바이오시스 주식회사 발광 다이오드
KR101138952B1 (ko) * 2010-09-24 2012-04-25 서울옵토디바이스주식회사 복수개의 발광셀들을 갖는 웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법
US9070851B2 (en) * 2010-09-24 2015-06-30 Seoul Semiconductor Co., Ltd. Wafer-level light emitting diode package and method of fabricating the same
CN102479913A (zh) * 2010-11-29 2012-05-30 上海蓝宝光电材料有限公司 一种高效高压垂直通孔键合式led芯片及其制作方法

Also Published As

Publication number Publication date
CN111223973B (zh) 2023-08-22
US20150280086A1 (en) 2015-10-01
TW201414024A (zh) 2014-04-01
DE112013003887T5 (de) 2015-05-07
CN104620399B (zh) 2020-02-21
WO2014038794A1 (ko) 2014-03-13
CN104620399A (zh) 2015-05-13
DE202013012470U1 (de) 2017-01-12
CN109638032A (zh) 2019-04-16
CN109638032B (zh) 2023-10-27
TWI602324B (zh) 2017-10-11
CN111223973A (zh) 2020-06-02
US9412922B2 (en) 2016-08-09

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