IN2014CN02940A - - Google Patents

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Publication number
IN2014CN02940A
IN2014CN02940A IN2940CHN2014A IN2014CN02940A IN 2014CN02940 A IN2014CN02940 A IN 2014CN02940A IN 2940CHN2014 A IN2940CHN2014 A IN 2940CHN2014A IN 2014CN02940 A IN2014CN02940 A IN 2014CN02940A
Authority
IN
India
Prior art keywords
reaction mixture
partially alkylated
products
trialkylgallium
raici
Prior art date
Application number
Other languages
English (en)
Inventor
Ralf Karch
Nass Andreas Rivas
Annika Frey
Tobias Burkert
Eileen Woerner
Angelino Doppiu
Original Assignee
Umicore Ag & Co Kg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE201210013941 external-priority patent/DE102012013941A1/de
Application filed by Umicore Ag & Co Kg filed Critical Umicore Ag & Co Kg
Publication of IN2014CN02940A publication Critical patent/IN2014CN02940A/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F5/00Compounds containing elements of Groups 3 or 13 of the Periodic Table
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P20/00Technologies relating to chemical industry
    • Y02P20/50Improvements relating to the production of bulk chemicals
    • Y02P20/582Recycling of unreacted starting or intermediate materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Catalysts (AREA)
IN2940CHN2014 2011-11-28 2012-11-28 IN2014CN02940A (enrdf_load_stackoverflow)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102011119487 2011-11-28
DE201210013941 DE102012013941A1 (de) 2012-07-16 2012-07-16 Verfahren zur Herstellung von Galliumtrialkylverbindungen
PCT/EP2012/073772 WO2013083450A1 (en) 2011-11-28 2012-11-28 Process for preparing trialkylgallium compounds

Publications (1)

Publication Number Publication Date
IN2014CN02940A true IN2014CN02940A (enrdf_load_stackoverflow) 2015-07-03

Family

ID=47278289

Family Applications (1)

Application Number Title Priority Date Filing Date
IN2940CHN2014 IN2014CN02940A (enrdf_load_stackoverflow) 2011-11-28 2012-11-28

Country Status (9)

Country Link
US (2) US9108985B2 (enrdf_load_stackoverflow)
EP (2) EP2785724B1 (enrdf_load_stackoverflow)
JP (6) JP6165159B2 (enrdf_load_stackoverflow)
KR (3) KR102071084B1 (enrdf_load_stackoverflow)
CN (5) CN103958529A (enrdf_load_stackoverflow)
IN (1) IN2014CN02940A (enrdf_load_stackoverflow)
RU (2) RU2014126213A (enrdf_load_stackoverflow)
TW (2) TWI632151B (enrdf_load_stackoverflow)
WO (2) WO2013083449A1 (enrdf_load_stackoverflow)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI632151B (zh) 2011-11-28 2018-08-11 烏明克股份有限兩合公司 第iiia族金屬的三烷基化合物之製法
US8513447B1 (en) * 2012-02-01 2013-08-20 Chemtura Corporation Preparation of tri-alkyl gallium or tri-alkyl indium compounds
EP3036243B1 (de) 2013-08-22 2019-10-09 Umicore AG & Co. KG Verfahren zur herstellung von alkylindium-verbindungen und deren verwendung
RU2016110113A (ru) * 2013-08-22 2018-11-23 Умикоре Аг Унд Ко. Кг Способ получения алкилиндиевых соединений и их применение
JP6413801B2 (ja) * 2014-02-07 2018-10-31 宇部興産株式会社 トリアルキルガリウムの製造方法
WO2015136049A1 (de) * 2014-03-14 2015-09-17 Umicore Ag & Co. Kg Verfahren zur herstellung von trialkylgallium-verbindungen und deren verwendung
EP3409676B1 (de) * 2017-05-29 2020-10-14 Umicore Ag & Co. Kg Herstellung von trialkylindiumverbindungen in gegenwart von carboxylaten
US11401282B2 (en) 2017-10-31 2022-08-02 Nouryon Chemicals International B.V. Method for storing and/or transporting gallium chloride
WO2019115377A1 (en) * 2017-12-13 2019-06-20 Akzo Nobel Chemicals International B.V. Process for purification of dimethyl aluminium chloride

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL264689A (enrdf_load_stackoverflow) 1960-05-14
DE4005726A1 (de) * 1989-04-28 1990-10-31 Messer Griesheim Gmbh Verfahren zur herstellung von galliumalkylverbindungen
US5043462A (en) * 1989-04-28 1991-08-27 Messer Greisheim Process for the production of gallium-alkyl compounds
US5473090A (en) 1992-07-02 1995-12-05 Air Products And Chemicals, Inc. Process for the preparation of trialkyl compounds of group 3a metals
US5350869A (en) 1993-07-27 1994-09-27 Cvd, Incorporated Purification of trialkylgallium, synthesis of trialkylgallium
US5756786A (en) 1997-06-25 1998-05-26 Morton International, Inc. High purity trimethylindium, method of synthesis
JP2000005503A (ja) 1998-06-24 2000-01-11 Nippon Shokubai Co Ltd 反応蒸留装置および反応蒸留方法
GB2344822A (en) 1998-12-19 2000-06-21 Epichem Ltd Organometallic compound production using distillation
GB0017968D0 (en) 2000-07-22 2000-09-13 Epichem Ltd An improved process and apparatus for the isolation of pure,or substantially pure,organometallic compounds
KR100852361B1 (ko) * 2001-04-06 2008-08-14 롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨 트리알킬 va족 금속 화합물
US6770769B2 (en) 2002-04-06 2004-08-03 Shipley Company, L.L.C. Trialkylindium preparation
JP4054997B2 (ja) 2003-06-19 2008-03-05 信越化学工業株式会社 高純度アルキルガリウムの製造方法
TW200619222A (en) 2004-09-02 2006-06-16 Rohm & Haas Elect Mat Method for making organometallic compounds
JP4470682B2 (ja) 2004-10-13 2010-06-02 住友化学株式会社 トリメチルガリウムの製造方法
US7667063B2 (en) 2005-03-23 2010-02-23 Nichia Corporation Method for producing trialkyl gallium
JP4774776B2 (ja) 2005-03-23 2011-09-14 日亜化学工業株式会社 トリアルキルガリウムの製造方法
CN1872862A (zh) 2005-06-03 2006-12-06 大连保税区科利德化工科技开发有限公司 三甲基镓制备和提纯方法
CN1872861A (zh) 2005-06-03 2006-12-06 大连保税区科利德化工科技开发有限公司 三甲基镓生产方法及设备
JP4784729B2 (ja) 2005-06-09 2011-10-05 信越化学工業株式会社 トリメチルガリウムの製造方法
JP2009007786A (ja) * 2007-06-26 2009-01-15 Miracle Three Corporation 階段室型共同住宅の増築方法及びこの方法で増築された建築物
US20090054717A1 (en) * 2007-08-21 2009-02-26 The Nippon Synthetic Chemical Industry Co., Ltd. Method of Producing 3,4-Diacyloxy-1-Butene
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JP2009126835A (ja) 2007-11-27 2009-06-11 Ube Ind Ltd 高純度トリアルキルガリウム及びその製法
JP5423039B2 (ja) 2009-02-23 2014-02-19 宇部興産株式会社 高純度トリアルキルガリウム及びその製造方法
TWI632151B (zh) 2011-11-28 2018-08-11 烏明克股份有限兩合公司 第iiia族金屬的三烷基化合物之製法

Also Published As

Publication number Publication date
TW201720834A (zh) 2017-06-16
CN103958529A (zh) 2014-07-30
TWI632151B (zh) 2018-08-11
JP6165159B2 (ja) 2017-07-19
TWI632149B (zh) 2018-08-11
TW201329091A (zh) 2013-07-16
KR20200053625A (ko) 2020-05-18
JP6165160B2 (ja) 2017-07-19
EP2785725A1 (en) 2014-10-08
KR102071084B1 (ko) 2020-01-29
CN107021973A (zh) 2017-08-08
JP2015504439A (ja) 2015-02-12
JP2017132788A (ja) 2017-08-03
JP6983851B2 (ja) 2021-12-17
EP2785725B1 (en) 2017-10-11
RU2014126212A (ru) 2016-01-27
KR102109904B1 (ko) 2020-05-12
JP6644726B2 (ja) 2020-02-12
JP2014534256A (ja) 2014-12-18
CN108341834B (zh) 2021-05-25
CN108341834A (zh) 2018-07-31
KR20140099862A (ko) 2014-08-13
JP6679527B2 (ja) 2020-04-15
KR20140099863A (ko) 2014-08-13
RU2014126213A (ru) 2016-01-27
JP2020019825A (ja) 2020-02-06
CN103958528A (zh) 2014-07-30
JP2021169529A (ja) 2021-10-28
US9108985B2 (en) 2015-08-18
CN109456345A (zh) 2019-03-12
EP2785724A1 (en) 2014-10-08
EP2785724B1 (en) 2016-09-14
WO2013083450A1 (en) 2013-06-13
US9695201B2 (en) 2017-07-04
US20140256974A1 (en) 2014-09-11
US20140287141A1 (en) 2014-09-25
KR102231740B1 (ko) 2021-03-23
JP2017105848A (ja) 2017-06-15
WO2013083449A1 (en) 2013-06-13

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