IN2013DN02549A - - Google Patents

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Publication number
IN2013DN02549A
IN2013DN02549A IN2549DEN2013A IN2013DN02549A IN 2013DN02549 A IN2013DN02549 A IN 2013DN02549A IN 2549DEN2013 A IN2549DEN2013 A IN 2549DEN2013A IN 2013DN02549 A IN2013DN02549 A IN 2013DN02549A
Authority
IN
India
Prior art keywords
semiconductor chip
trench
gap
insulating layer
polymeric filler
Prior art date
Application number
Other languages
English (en)
Inventor
Michael Z Su
Ahmed Gamal Refai
Bryan Black
Original Assignee
Advanced Micro Devices Inc
Ati Technologies Ulc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc, Ati Technologies Ulc filed Critical Advanced Micro Devices Inc
Publication of IN2013DN02549A publication Critical patent/IN2013DN02549A/en

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    • H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
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    • H01L2924/166—Material
    • H01L2924/167—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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US12/878,795 US8617926B2 (en) 2010-09-09 2010-09-09 Semiconductor chip device with polymeric filler trench
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