IN2003DE01322A - - Google Patents
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- Publication number
- IN2003DE01322A IN2003DE01322A IN1322DE2003A IN2003DE01322A IN 2003DE01322 A IN2003DE01322 A IN 2003DE01322A IN 1322DE2003 A IN1322DE2003 A IN 1322DE2003A IN 2003DE01322 A IN2003DE01322 A IN 2003DE01322A
- Authority
- IN
- India
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
- H01L21/3121—Layers comprising organo-silicon compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
- H01L21/3121—Layers comprising organo-silicon compounds
- H01L21/3122—Layers comprising organo-silicon compounds layers comprising polysiloxane compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
- H01L21/3121—Layers comprising organo-silicon compounds
- H01L21/3122—Layers comprising organo-silicon compounds layers comprising polysiloxane compounds
- H01L21/3124—Layers comprising organo-silicon compounds layers comprising polysiloxane compounds layers comprising hydrogen silsesquioxane
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Formation Of Insulating Films (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Laminated Bodies (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/789,422 US6455443B1 (en) | 2001-02-21 | 2001-02-21 | Method of fabricating low-dielectric constant interlevel dielectric films for BEOL interconnects with enhanced adhesion and low-defect density |
Publications (1)
Publication Number | Publication Date |
---|---|
IN2003DE01322A true IN2003DE01322A (zh) | 2005-05-27 |
Family
ID=25147596
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IN1322DE2003 IN2003DE01322A (zh) | 2001-02-21 | 2003-08-19 |
Country Status (12)
Country | Link |
---|---|
US (1) | US6455443B1 (zh) |
EP (1) | EP1390972B1 (zh) |
JP (1) | JP3759108B2 (zh) |
KR (1) | KR100516534B1 (zh) |
CN (1) | CN1251312C (zh) |
AT (1) | ATE333144T1 (zh) |
DE (1) | DE60213086T2 (zh) |
ES (1) | ES2262797T3 (zh) |
IL (1) | IL157506A (zh) |
IN (1) | IN2003DE01322A (zh) |
TW (1) | TW561551B (zh) |
WO (1) | WO2002069381A2 (zh) |
Families Citing this family (51)
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US6685983B2 (en) * | 2001-03-14 | 2004-02-03 | International Business Machines Corporation | Defect-free dielectric coatings and preparation thereof using polymeric nitrogenous porogens |
US6716771B2 (en) * | 2002-04-09 | 2004-04-06 | Intel Corporation | Method for post-CMP conversion of a hydrophobic surface of a low-k dielectric layer to a hydrophilic surface |
WO2004053205A2 (en) * | 2002-07-22 | 2004-06-24 | Massachusetts Institute Of Technolgoy | Porous material formation by chemical vapor deposition onto colloidal crystal templates |
US6974762B2 (en) * | 2002-08-01 | 2005-12-13 | Intel Corporation | Adhesion of carbon doped oxides by silanization |
JP2004274020A (ja) * | 2002-09-24 | 2004-09-30 | Rohm & Haas Electronic Materials Llc | 電子デバイス製造 |
US7005390B2 (en) * | 2002-10-09 | 2006-02-28 | Intel Corporation | Replenishment of surface carbon and surface passivation of low-k porous silicon-based dielectric materials |
WO2004038783A2 (en) * | 2002-10-21 | 2004-05-06 | Massachusetts Institute Of Technology | Pecvd of organosilicate thin films |
US7248062B1 (en) | 2002-11-04 | 2007-07-24 | Kla-Tencor Technologies Corp. | Contactless charge measurement of product wafers and control of corona generation and deposition |
KR20040051097A (ko) * | 2002-12-11 | 2004-06-18 | 패럴린코리아(주) | 패럴린(parylene) 고분자 코팅의 접착력을 증진시키는전처리 방법 및 이를 응용한 장치 |
CN100334695C (zh) * | 2003-01-02 | 2007-08-29 | 上海华虹(集团)有限公司 | 一种含硅低介电常数材料炉子固化工艺 |
TW200421483A (en) * | 2003-03-17 | 2004-10-16 | Semiconductor Leading Edge Tec | Semiconductor device and method of manufacturing the same |
US7164197B2 (en) * | 2003-06-19 | 2007-01-16 | 3M Innovative Properties Company | Dielectric composite material |
US6825561B1 (en) | 2003-06-19 | 2004-11-30 | International Business Machines Corporation | Structure and method for eliminating time dependent dielectric breakdown failure of low-k material |
JP4106438B2 (ja) * | 2003-06-20 | 2008-06-25 | 独立行政法人産業技術総合研究所 | 多層微細配線インターポーザおよびその製造方法 |
US6992003B2 (en) * | 2003-09-11 | 2006-01-31 | Freescale Semiconductor, Inc. | Integration of ultra low K dielectric in a semiconductor fabrication process |
US7056840B2 (en) * | 2003-09-30 | 2006-06-06 | International Business Machines Corp. | Direct photo-patterning of nanoporous organosilicates, and method of use |
US6903004B1 (en) | 2003-12-16 | 2005-06-07 | Freescale Semiconductor, Inc. | Method of making a semiconductor device having a low K dielectric |
US6962871B2 (en) * | 2004-03-31 | 2005-11-08 | Dielectric Systems, Inc. | Composite polymer dielectric film |
US7309395B2 (en) * | 2004-03-31 | 2007-12-18 | Dielectric Systems, Inc. | System for forming composite polymer dielectric film |
US7094661B2 (en) * | 2004-03-31 | 2006-08-22 | Dielectric Systems, Inc. | Single and dual damascene techniques utilizing composite polymer dielectric film |
US20060046044A1 (en) * | 2004-08-24 | 2006-03-02 | Lee Chung J | Porous composite polymer dielectric film |
US7271697B2 (en) * | 2004-12-07 | 2007-09-18 | Multi-Fineline Electronix | Miniature circuitry and inductive components and methods for manufacturing same |
US20060128163A1 (en) * | 2004-12-14 | 2006-06-15 | International Business Machines Corporation | Surface treatment of post-rie-damaged p-osg and other damaged materials |
US7446055B2 (en) * | 2005-03-17 | 2008-11-04 | Air Products And Chemicals, Inc. | Aerosol misted deposition of low dielectric organosilicate films |
US20060275547A1 (en) * | 2005-06-01 | 2006-12-07 | Lee Chung J | Vapor Phase Deposition System and Method |
US20060275616A1 (en) * | 2005-06-03 | 2006-12-07 | Clough Robert S | Silane-based coupling agent |
JP2009505413A (ja) | 2005-08-19 | 2009-02-05 | エイブイエックス リミテッド | 固体コンデンサおよびその製造方法 |
WO2007022538A2 (en) * | 2005-08-19 | 2007-02-22 | Kla-Tencor Technologies Corporation | Test pads for measuring properties of a wafer |
GB0517952D0 (en) * | 2005-09-02 | 2005-10-12 | Avx Ltd | Method of forming anode bodies for solid state capacitors |
JP4616154B2 (ja) * | 2005-11-14 | 2011-01-19 | 富士通株式会社 | 半導体装置の製造方法 |
US7851138B2 (en) * | 2007-07-19 | 2010-12-14 | Hitachi Global Storage Technologies, Netherlands, B.V. | Patterning a surface comprising silicon and carbon |
US7760487B2 (en) * | 2007-10-22 | 2010-07-20 | Avx Corporation | Doped ceramic powder for use in forming capacitor anodes |
US7760488B2 (en) * | 2008-01-22 | 2010-07-20 | Avx Corporation | Sintered anode pellet treated with a surfactant for use in an electrolytic capacitor |
US7768773B2 (en) * | 2008-01-22 | 2010-08-03 | Avx Corporation | Sintered anode pellet etched with an organic acid for use in an electrolytic capacitor |
US7852615B2 (en) * | 2008-01-22 | 2010-12-14 | Avx Corporation | Electrolytic capacitor anode treated with an organometallic compound |
CN102318044A (zh) * | 2008-05-08 | 2012-01-11 | 巴斯夫欧洲公司 | 包含碳化硅层的层型结构、其制备方法及其用途 |
US8203827B2 (en) * | 2009-02-20 | 2012-06-19 | Avx Corporation | Anode for a solid electrolytic capacitor containing a non-metallic surface treatment |
CN102487057B (zh) * | 2010-12-03 | 2014-03-12 | 中芯国际集成电路制造(北京)有限公司 | 金属前介质层及其制造方法 |
TWI445626B (zh) * | 2011-03-18 | 2014-07-21 | Eternal Chemical Co Ltd | 製造軟性元件的方法 |
CN103367107B (zh) * | 2012-04-09 | 2016-04-20 | 中芯国际集成电路制造(上海)有限公司 | 改善表面结合力的方法 |
TWI504514B (zh) * | 2012-12-11 | 2015-10-21 | Ind Tech Res Inst | 層疊結構、其製造方法及發光裝置 |
DE112014001822T5 (de) * | 2013-04-04 | 2015-12-24 | Fuji Electric Co., Ltd. | Verfahren zum Fertigen einer Halbleitervorrichtung |
US9159556B2 (en) | 2013-09-09 | 2015-10-13 | GlobalFoundries, Inc. | Alleviation of the corrosion pitting of chip pads |
US9806132B2 (en) * | 2013-11-22 | 2017-10-31 | General Electric Company | Organic X-ray detector with barrier layer |
CN105418926B (zh) * | 2014-09-12 | 2018-07-13 | 中国科学院上海高等研究院 | 一种含氟萘乙基硅树脂及其制备方法和应用 |
JP6540361B2 (ja) | 2015-08-18 | 2019-07-10 | 富士通株式会社 | 半導体装置及びその製造方法 |
US9799593B1 (en) * | 2016-04-01 | 2017-10-24 | Intel Corporation | Semiconductor package substrate having an interfacial layer |
US10468243B2 (en) * | 2017-11-22 | 2019-11-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of manufacturing semiconductor device and method of cleaning substrate |
CN110965045A (zh) * | 2018-09-29 | 2020-04-07 | 南京理工大学 | 一种利用Parylene微纳米薄膜对薄壁聚能切割索进行防护的方法 |
US11500290B2 (en) * | 2018-11-13 | 2022-11-15 | International Business Machines Corporation | Adhesion promoters |
CN110606970A (zh) * | 2019-09-30 | 2019-12-24 | 福州大学 | 一种提升涂层与塑料粘结力的塑料表面预处理方法 |
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FR2193864B1 (zh) * | 1972-07-31 | 1974-12-27 | Rhone Poulenc Sa | |
JPH0791509B2 (ja) * | 1985-12-17 | 1995-10-04 | 住友化学工業株式会社 | 半導体用絶縁膜形成塗布液 |
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JP3743519B2 (ja) * | 1994-10-18 | 2006-02-08 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | シリコン−酸化物薄層の製造方法 |
US5760480A (en) * | 1995-09-20 | 1998-06-02 | Advanced Micro Devics, Inc. | Low RC interconnection |
JPH09143420A (ja) * | 1995-09-21 | 1997-06-03 | Asahi Glass Co Ltd | 低誘電率樹脂組成物 |
US6071830A (en) * | 1996-04-17 | 2000-06-06 | Sony Corporation | Method of forming insulating film |
US5989998A (en) * | 1996-08-29 | 1999-11-23 | Matsushita Electric Industrial Co., Ltd. | Method of forming interlayer insulating film |
-
2001
- 2001-02-21 US US09/789,422 patent/US6455443B1/en not_active Expired - Fee Related
-
2002
- 2002-02-19 KR KR20037009637A patent/KR100516534B1/ko not_active IP Right Cessation
- 2002-02-19 ES ES02721047T patent/ES2262797T3/es not_active Expired - Lifetime
- 2002-02-19 DE DE60213086T patent/DE60213086T2/de not_active Expired - Lifetime
- 2002-02-19 AT AT02721047T patent/ATE333144T1/de not_active IP Right Cessation
- 2002-02-19 EP EP02721047A patent/EP1390972B1/en not_active Expired - Lifetime
- 2002-02-19 JP JP2002568408A patent/JP3759108B2/ja not_active Expired - Fee Related
- 2002-02-19 WO PCT/US2002/004879 patent/WO2002069381A2/en active IP Right Grant
- 2002-02-19 CN CNB028063457A patent/CN1251312C/zh not_active Expired - Fee Related
- 2002-02-21 TW TW091103031A patent/TW561551B/zh not_active IP Right Cessation
-
2003
- 2003-08-19 IN IN1322DE2003 patent/IN2003DE01322A/en unknown
- 2003-08-21 IL IL157506A patent/IL157506A/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
US20020160600A1 (en) | 2002-10-31 |
EP1390972A2 (en) | 2004-02-25 |
CN1550036A (zh) | 2004-11-24 |
IL157506A0 (en) | 2004-03-28 |
EP1390972B1 (en) | 2006-07-12 |
DE60213086D1 (de) | 2006-08-24 |
CN1251312C (zh) | 2006-04-12 |
JP2004532514A (ja) | 2004-10-21 |
WO2002069381A2 (en) | 2002-09-06 |
KR20030071841A (ko) | 2003-09-06 |
JP3759108B2 (ja) | 2006-03-22 |
ATE333144T1 (de) | 2006-08-15 |
KR100516534B1 (ko) | 2005-09-22 |
US6455443B1 (en) | 2002-09-24 |
DE60213086T2 (de) | 2006-12-28 |
WO2002069381A3 (en) | 2003-12-18 |
ES2262797T3 (es) | 2006-12-01 |
IL157506A (en) | 2007-06-03 |
TW561551B (en) | 2003-11-11 |