Classifications

• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03K—PULSE TECHNIQUE
  • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
  • H03K17/10—Modifications for increasing the maximum permissible switched voltage
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C5/00—Details of stores covered by group G11C11/00
  • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
  • G11C5/143—Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels ; Switching between alternative supplies
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C16/00—Erasable programmable read-only memories
  • G11C16/02—Erasable programmable read-only memories electrically programmable
  • G11C16/06—Auxiliary circuits, e.g. for writing into memory
  • G11C16/10—Programming or data input circuits
  • G11C16/12—Programming voltage switching circuits
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C16/00—Erasable programmable read-only memories
  • G11C16/02—Erasable programmable read-only memories electrically programmable
  • G11C16/06—Auxiliary circuits, e.g. for writing into memory
  • G11C16/10—Programming or data input circuits
  • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C5/00—Details of stores covered by group G11C11/00
  • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03K—PULSE TECHNIQUE
  • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
  • H03K17/10—Modifications for increasing the maximum permissible switched voltage
  • H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03K—PULSE TECHNIQUE
  • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
  • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
  • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
  • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
  • H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03K—PULSE TECHNIQUE
  • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
  • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
  • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
  • H03K3/356—Bistable circuits
  • H03K3/356017—Bistable circuits using additional transistors in the input circuit
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03K—PULSE TECHNIQUE
  • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
  • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
  • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
  • H03K3/356—Bistable circuits
  • H03K3/356104—Bistable circuits using complementary field-effect transistors
  • H03K3/356113—Bistable circuits using complementary field-effect transistors using additional transistors in the input circuit
  • H03K3/356147—Bistable circuits using complementary field-effect transistors using additional transistors in the input circuit using pass gates

Landscapes

• Engineering & Computer Science (AREA)
• Power Engineering (AREA)
• Read Only Memory (AREA)
• Non-Volatile Memory (AREA)
• Electronic Switches (AREA)
• Semiconductor Integrated Circuits (AREA)

Applications Claiming Priority (1)

Publications (1)

Family

ID=7752210

Family Applications (1)

Country Status (12)

Families Citing this family (12)

Family Cites Families (5)

• 1995
  • 1995-01-24 DE DE19502116A patent/DE19502116C2/de not_active Expired - Fee Related
  • 1995-12-26 IN IN1725CA1995 patent/IN186226B/en unknown
  • 1995-12-29 JP JP8522534A patent/JP2950999B2/ja not_active Expired - Fee Related
  • 1995-12-29 EP EP95942654A patent/EP0806083B1/de not_active Expired - Lifetime
  • 1995-12-29 KR KR1019970704993A patent/KR100358255B1/ko not_active IP Right Cessation
  • 1995-12-29 CN CN95197783A patent/CN1096146C/zh not_active Expired - Lifetime
  • 1995-12-29 DE DE59503885T patent/DE59503885D1/de not_active Expired - Lifetime
  • 1995-12-29 WO PCT/DE1995/001875 patent/WO1996023356A1/de active IP Right Grant
  • 1995-12-29 UA UA97073951A patent/UA42048C2/ru unknown
  • 1995-12-29 AT AT95942654T patent/ATE172068T1/de not_active IP Right Cessation
  • 1995-12-29 ES ES95942654T patent/ES2123300T3/es not_active Expired - Lifetime
  • 1995-12-29 RU RU97114100A patent/RU2137294C1/ru not_active IP Right Cessation
• 1997
  • 1997-07-24 US US08/899,746 patent/US5925905A/en not_active Expired - Lifetime

Also Published As

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