IL67199A - Thin film photovoltaic solar cell - Google Patents
Thin film photovoltaic solar cellInfo
- Publication number
- IL67199A IL67199A IL67199A IL6719982A IL67199A IL 67199 A IL67199 A IL 67199A IL 67199 A IL67199 A IL 67199A IL 6719982 A IL6719982 A IL 6719982A IL 67199 A IL67199 A IL 67199A
- Authority
- IL
- Israel
- Prior art keywords
- solar cell
- solution
- substrate
- thin film
- growth
- Prior art date
Links
- 239000010409 thin film Substances 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 230000004888 barrier function Effects 0.000 abstract 1
- 238000011109 contamination Methods 0.000 abstract 1
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract 1
- 239000008393 encapsulating agent Substances 0.000 abstract 1
- 239000007791 liquid phase Substances 0.000 abstract 1
- 239000000155 melt Substances 0.000 abstract 1
- 229910001092 metal group alloy Inorganic materials 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
- H01L31/1832—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising ternary compounds, e.g. Hg Cd Te
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/321,381 US4571448A (en) | 1981-11-16 | 1981-11-16 | Thin film photovoltaic solar cell and method of making the same |
Publications (2)
Publication Number | Publication Date |
---|---|
IL67199A0 IL67199A0 (en) | 1983-03-31 |
IL67199A true IL67199A (en) | 1987-10-30 |
Family
ID=23250382
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL67199A IL67199A (en) | 1981-11-16 | 1982-11-08 | Thin film photovoltaic solar cell |
Country Status (9)
Country | Link |
---|---|
US (1) | US4571448A (de) |
EP (1) | EP0079790B1 (de) |
JP (2) | JP2575601B2 (de) |
AT (1) | ATE41078T1 (de) |
AU (2) | AU565091B2 (de) |
CA (1) | CA1243389A (de) |
DE (1) | DE3279497D1 (de) |
IL (1) | IL67199A (de) |
ZA (1) | ZA828384B (de) |
Families Citing this family (114)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4571448A (en) * | 1981-11-16 | 1986-02-18 | University Of Delaware | Thin film photovoltaic solar cell and method of making the same |
IL69756A0 (en) * | 1982-09-24 | 1983-12-30 | Energy Conversion Devices Inc | System and method for making large area photovoltaic devices |
AU2095083A (en) * | 1982-11-09 | 1984-05-17 | Energy Conversion Devices Inc. | Laminated strip of large area solar cells |
US4599482A (en) * | 1983-03-07 | 1986-07-08 | Semiconductor Energy Lab. Co., Ltd. | Semiconductor photoelectric conversion device and method of making the same |
US4532372A (en) * | 1983-12-23 | 1985-07-30 | Energy Conversion Devices, Inc. | Barrier layer for photovoltaic devices |
IN165761B (de) * | 1983-07-28 | 1990-01-06 | Energy Conversion Devices Inc | |
JPH0680837B2 (ja) * | 1983-08-29 | 1994-10-12 | 通商産業省工業技術院長 | 光路を延長した光電変換素子 |
US4582952A (en) * | 1984-04-30 | 1986-04-15 | Astrosystems, Inc. | Gallium arsenide phosphide top solar cell |
EP0190855A3 (de) * | 1985-02-08 | 1986-12-30 | Energy Conversion Devices, Inc. | Gegen niederohmige Defekte unempfindliche fotovoltaische Anordnung |
US4677250A (en) * | 1985-10-30 | 1987-06-30 | Astrosystems, Inc. | Fault tolerant thin-film photovoltaic cell |
US4772564A (en) * | 1985-10-30 | 1988-09-20 | Astrosystems, Inc. | Fault tolerant thin-film photovoltaic cell fabrication process |
US4781766A (en) * | 1985-10-30 | 1988-11-01 | Astrosystems, Inc. | Fault tolerant thin-film photovoltaic cell and method |
US4818337A (en) * | 1986-04-11 | 1989-04-04 | University Of Delaware | Thin active-layer solar cell with multiple internal reflections |
JPS63138843U (de) * | 1987-03-04 | 1988-09-13 | ||
US5326719A (en) * | 1988-03-11 | 1994-07-05 | Unisearch Limited | Thin film growth using two part metal solvent |
US5057163A (en) * | 1988-05-04 | 1991-10-15 | Astropower, Inc. | Deposited-silicon film solar cell |
JP2706113B2 (ja) * | 1988-11-25 | 1998-01-28 | 工業技術院長 | 光電変換素子 |
DE3901042A1 (de) * | 1989-01-14 | 1990-07-26 | Nukem Gmbh | Verfahren und vorrichtung zur herstellung eines halbleiter-schichtsystems |
US5211761A (en) * | 1990-06-29 | 1993-05-18 | Sanyo Electric Co., Ltd. | Photovoltaic device and manufacturing method thereof |
JP2784841B2 (ja) * | 1990-08-09 | 1998-08-06 | キヤノン株式会社 | 太陽電池用基板 |
US5273911A (en) * | 1991-03-07 | 1993-12-28 | Mitsubishi Denki Kabushiki Kaisha | Method of producing a thin-film solar cell |
US5093576A (en) * | 1991-03-15 | 1992-03-03 | Cree Research | High sensitivity ultraviolet radiation detector |
JPH05167054A (ja) * | 1991-12-19 | 1993-07-02 | Toshiba Corp | 固体撮像装置の製造方法 |
JP3478618B2 (ja) * | 1993-11-30 | 2003-12-15 | キヤノン株式会社 | 光電変換素子及びその製造方法 |
US5584941A (en) * | 1994-03-22 | 1996-12-17 | Canon Kabushiki Kaisha | Solar cell and production process therefor |
US5596450A (en) * | 1995-01-06 | 1997-01-21 | W. L. Gore & Associates, Inc. | Light reflectant surface and method for making and using same |
US5982542A (en) * | 1995-01-06 | 1999-11-09 | W. L. Gore & Associates, Inc. | High light diffusive and low light absorbent material and method for making and using same |
US5781342A (en) * | 1995-01-06 | 1998-07-14 | W.L. Gore & Associates, Inc. | High light diffusive and low light absorbent material and method for making and using same |
US5689364A (en) * | 1995-01-06 | 1997-11-18 | W.L. Gore & Associates, Inc. | Light reflectant surface for photoinduction chambers |
US6015610A (en) * | 1995-01-06 | 2000-01-18 | W. L. Gore & Associates, Inc. | Very thin highly light reflectant surface and method for making and using same |
US7075002B1 (en) * | 1995-03-27 | 2006-07-11 | Semiconductor Energy Laboratory Company, Ltd. | Thin-film photoelectric conversion device and a method of manufacturing the same |
US5569332A (en) * | 1995-08-07 | 1996-10-29 | United Solar Systems Corporation | Optically enhanced photovoltaic back reflector |
EP0793277B1 (de) * | 1996-02-27 | 2001-08-22 | Canon Kabushiki Kaisha | Photovoltaische Vorrichtung, die ein undurchsichtiges Substrat mit einer spezifischen unregelmässigen Oberflächenstruktur aufweist |
US5836677A (en) * | 1997-02-05 | 1998-11-17 | W.L. Gore & Associates, Inc. | Retrofit compact fluorescent lamp |
US5982548A (en) * | 1997-05-19 | 1999-11-09 | W. L. Gore & Associates, Inc. | Thin light reflectant surface and method for making and using same |
US6013871A (en) * | 1997-07-02 | 2000-01-11 | Curtin; Lawrence F. | Method of preparing a photovoltaic device |
DE19743692A1 (de) * | 1997-10-02 | 1999-04-08 | Zae Bayern | Multifunktionsschicht zur Verbesserung des Wirkungsgrades von kristallinen Dünnschicht Silizium Solarzellen |
US6391108B2 (en) | 1997-12-12 | 2002-05-21 | Canon Kabushiki Kaisha | Liquid phase growth method of silicon crystal, method of producing solar cell, and liquid phase growth apparatus |
US6559372B2 (en) * | 2001-09-20 | 2003-05-06 | Heliovolt Corporation | Photovoltaic devices and compositions for use therein |
US6881647B2 (en) * | 2001-09-20 | 2005-04-19 | Heliovolt Corporation | Synthesis of layers, coatings or films using templates |
US6736986B2 (en) | 2001-09-20 | 2004-05-18 | Heliovolt Corporation | Chemical synthesis of layers, coatings or films using surfactants |
US6500733B1 (en) * | 2001-09-20 | 2002-12-31 | Heliovolt Corporation | Synthesis of layers, coatings or films using precursor layer exerted pressure containment |
US6787012B2 (en) * | 2001-09-20 | 2004-09-07 | Helio Volt Corp | Apparatus for the synthesis of layers, coatings or films |
JP2004131305A (ja) * | 2002-10-08 | 2004-04-30 | Canon Inc | シリコン結晶の液相成長方法、太陽電池の製造方法及びシリコン結晶の液相成長装置 |
US20050148198A1 (en) * | 2004-01-05 | 2005-07-07 | Technion Research & Development Foundation Ltd. | Texturing a semiconductor material using negative potential dissolution (NPD) |
US20070160763A1 (en) | 2006-01-12 | 2007-07-12 | Stanbery Billy J | Methods of making controlled segregated phase domain structures |
US8084685B2 (en) * | 2006-01-12 | 2011-12-27 | Heliovolt Corporation | Apparatus for making controlled segregated phase domain structures |
US7767904B2 (en) * | 2006-01-12 | 2010-08-03 | Heliovolt Corporation | Compositions including controlled segregated phase domain structures |
US20080134497A1 (en) * | 2006-12-11 | 2008-06-12 | Sunmodular, Inc. | Modular solar panels with heat exchange & methods of making thereof |
US20080135094A1 (en) * | 2006-12-11 | 2008-06-12 | Sunmodular, Inc. | Photovoltaic roof tiles and methods of making same |
US7728219B2 (en) * | 2006-12-11 | 2010-06-01 | Sunmodular, Inc. | Photovoltaic cells, modules and methods of making same |
US8203071B2 (en) | 2007-01-18 | 2012-06-19 | Applied Materials, Inc. | Multi-junction solar cells and methods and apparatuses for forming the same |
CN101730942A (zh) * | 2007-04-30 | 2010-06-09 | 陈小源 | 导波光伏装置 |
US8034317B2 (en) * | 2007-06-18 | 2011-10-11 | Heliovolt Corporation | Assemblies of anisotropic nanoparticles |
US20090071527A1 (en) * | 2007-09-18 | 2009-03-19 | Reflexite Corporation | Solar arrays with geometric-shaped, three-dimensional structures and methods thereof |
KR20100095426A (ko) * | 2007-11-02 | 2010-08-30 | 어플라이드 머티어리얼스, 인코포레이티드 | 증착 공정들 간의 플라즈마 처리 |
US20090130827A1 (en) * | 2007-11-02 | 2009-05-21 | Soo Young Choi | Intrinsic amorphous silicon layer |
US20090181492A1 (en) * | 2008-01-11 | 2009-07-16 | Peter Nunan | Nano-cleave a thin-film of silicon for solar cell fabrication |
US8895842B2 (en) * | 2008-08-29 | 2014-11-25 | Applied Materials, Inc. | High quality TCO-silicon interface contact structure for high efficiency thin film silicon solar cells |
US20100059110A1 (en) * | 2008-09-11 | 2010-03-11 | Applied Materials, Inc. | Microcrystalline silicon alloys for thin film and wafer based solar applications |
US8937244B2 (en) | 2008-10-23 | 2015-01-20 | Alta Devices, Inc. | Photovoltaic device |
WO2010063530A2 (en) * | 2008-11-05 | 2010-06-10 | Oerlikon Solar Ip Ag, Truebbach | Solar cell device and method for manufacturing same |
WO2010090740A1 (en) * | 2009-02-04 | 2010-08-12 | Heliovolt Corporation | Method of forming an indium-containing transparent conductive oxide film, metal targets used in the method and photovoltaic devices utilizing said films |
ITVR20090015A1 (it) * | 2009-02-17 | 2010-08-18 | Enrico Pieragostini | Processo per incrementare la captazione di energia solare incidente su una cella solare |
US20100132775A1 (en) * | 2009-03-05 | 2010-06-03 | Applied Materials, Inc. | Adhesion between azo and ag for the back contact in tandem junction cell by metal alloy |
US20100224243A1 (en) * | 2009-03-05 | 2010-09-09 | Applied Materials, Inc. | Adhesion between azo and ag for the back contact in tandem junction cell by metal alloy |
US8283557B2 (en) * | 2009-03-10 | 2012-10-09 | Silevo, Inc. | Heterojunction solar cell based on epitaxial crystalline-silicon thin film on metallurgical silicon substrate design |
CN102356474A (zh) * | 2009-04-06 | 2012-02-15 | 应用材料公司 | 高效能薄膜硅太阳能电池的高品质透明导电氧化物-硅界面接触结构 |
CA2708193A1 (en) * | 2009-06-05 | 2010-12-05 | Heliovolt Corporation | Process for synthesizing a thin film or composition layer via non-contact pressure containment |
US8256621B2 (en) * | 2009-09-11 | 2012-09-04 | Pro-Pak Industries, Inc. | Load tray and method for unitizing a palletized load |
US20110068367A1 (en) * | 2009-09-23 | 2011-03-24 | Sierra Solar Power, Inc. | Double-sided heterojunction solar cell based on thin epitaxial silicon |
US9691921B2 (en) * | 2009-10-14 | 2017-06-27 | Alta Devices, Inc. | Textured metallic back reflector |
US20110088760A1 (en) * | 2009-10-20 | 2011-04-21 | Applied Materials, Inc. | Methods of forming an amorphous silicon layer for thin film solar cell application |
US20150380576A1 (en) | 2010-10-13 | 2015-12-31 | Alta Devices, Inc. | Optoelectronic device with dielectric layer and method of manufacture |
US9768329B1 (en) | 2009-10-23 | 2017-09-19 | Alta Devices, Inc. | Multi-junction optoelectronic device |
US9502594B2 (en) | 2012-01-19 | 2016-11-22 | Alta Devices, Inc. | Thin-film semiconductor optoelectronic device with textured front and/or back surface prepared from template layer and etching |
US9136422B1 (en) | 2012-01-19 | 2015-09-15 | Alta Devices, Inc. | Texturing a layer in an optoelectronic device for improved angle randomization of light |
US11271128B2 (en) | 2009-10-23 | 2022-03-08 | Utica Leaseco, Llc | Multi-junction optoelectronic device |
US20170141256A1 (en) | 2009-10-23 | 2017-05-18 | Alta Devices, Inc. | Multi-junction optoelectronic device with group iv semiconductor as a bottom junction |
US9012766B2 (en) | 2009-11-12 | 2015-04-21 | Silevo, Inc. | Aluminum grid as backside conductor on epitaxial silicon thin film solar cells |
US8021641B2 (en) * | 2010-02-04 | 2011-09-20 | Alliance For Sustainable Energy, Llc | Methods of making copper selenium precursor compositions with a targeted copper selenide content and precursor compositions and thin films resulting therefrom |
DE102010007841A1 (de) * | 2010-02-11 | 2011-08-11 | Wieland-Werke AG, 89079 | Photovoltaikmodul mit einer photoaktiven Schicht oder Solarkollektor mit einem Solarabsorber |
KR101218133B1 (ko) * | 2010-04-27 | 2013-01-18 | 엘지디스플레이 주식회사 | 마이크로 렌즈의 제조방법 및 마이크로 렌즈를 구비한 태양전지 |
WO2011146115A1 (en) | 2010-05-21 | 2011-11-24 | Heliovolt Corporation | Liquid precursor for deposition of copper selenide and method of preparing the same |
US9214576B2 (en) | 2010-06-09 | 2015-12-15 | Solarcity Corporation | Transparent conducting oxide for photovoltaic devices |
US9142408B2 (en) | 2010-08-16 | 2015-09-22 | Alliance For Sustainable Energy, Llc | Liquid precursor for deposition of indium selenide and method of preparing the same |
US9773928B2 (en) | 2010-09-10 | 2017-09-26 | Tesla, Inc. | Solar cell with electroplated metal grid |
US9800053B2 (en) | 2010-10-08 | 2017-10-24 | Tesla, Inc. | Solar panels with integrated cell-level MPPT devices |
FR2971086B1 (fr) * | 2011-01-31 | 2014-04-18 | Inst Polytechnique Grenoble | Structure adaptee a la formation de cellules solaires |
US9054256B2 (en) | 2011-06-02 | 2015-06-09 | Solarcity Corporation | Tunneling-junction solar cell with copper grid for concentrated photovoltaic application |
US20120312361A1 (en) * | 2011-06-08 | 2012-12-13 | International Business Machines Corporation | Emitter structure and fabrication method for silicon heterojunction solar cell |
US11038080B2 (en) | 2012-01-19 | 2021-06-15 | Utica Leaseco, Llc | Thin-film semiconductor optoelectronic device with textured front and/or back surface prepared from etching |
TWI455333B (zh) * | 2012-04-09 | 2014-10-01 | Sino American Silicon Prod Inc | 太陽能電池 |
US9105797B2 (en) | 2012-05-31 | 2015-08-11 | Alliance For Sustainable Energy, Llc | Liquid precursor inks for deposition of In—Se, Ga—Se and In—Ga—Se |
AU2013326971B2 (en) | 2012-10-04 | 2016-06-30 | Tesla, Inc. | Photovoltaic devices with electroplated metal grids |
US9865754B2 (en) | 2012-10-10 | 2018-01-09 | Tesla, Inc. | Hole collectors for silicon photovoltaic cells |
US9281436B2 (en) | 2012-12-28 | 2016-03-08 | Solarcity Corporation | Radio-frequency sputtering system with rotary target for fabricating solar cells |
US10074755B2 (en) | 2013-01-11 | 2018-09-11 | Tesla, Inc. | High efficiency solar panel |
US9412884B2 (en) | 2013-01-11 | 2016-08-09 | Solarcity Corporation | Module fabrication of solar cells with low resistivity electrodes |
US9219174B2 (en) | 2013-01-11 | 2015-12-22 | Solarcity Corporation | Module fabrication of solar cells with low resistivity electrodes |
US20140311573A1 (en) | 2013-03-12 | 2014-10-23 | Ppg Industries Ohio, Inc. | Solar Cell With Selectively Doped Conductive Oxide Layer And Method Of Making The Same |
US9624595B2 (en) | 2013-05-24 | 2017-04-18 | Solarcity Corporation | Electroplating apparatus with improved throughput |
US10566515B2 (en) | 2013-12-06 | 2020-02-18 | Sridhar Kasichainula | Extended area of sputter deposited N-type and P-type thermoelectric legs in a flexible thin-film based thermoelectric device |
US10367131B2 (en) * | 2013-12-06 | 2019-07-30 | Sridhar Kasichainula | Extended area of sputter deposited n-type and p-type thermoelectric legs in a flexible thin-film based thermoelectric device |
WO2015134904A1 (en) * | 2014-03-06 | 2015-09-11 | The Regents Of The University Of Michigan | Field effect transistor memory device |
US10309012B2 (en) | 2014-07-03 | 2019-06-04 | Tesla, Inc. | Wafer carrier for reducing contamination from carbon particles and outgassing |
US9899546B2 (en) | 2014-12-05 | 2018-02-20 | Tesla, Inc. | Photovoltaic cells with electrodes adapted to house conductive paste |
US9947822B2 (en) | 2015-02-02 | 2018-04-17 | Tesla, Inc. | Bifacial photovoltaic module using heterojunction solar cells |
US9761744B2 (en) | 2015-10-22 | 2017-09-12 | Tesla, Inc. | System and method for manufacturing photovoltaic structures with a metal seed layer |
US9842956B2 (en) | 2015-12-21 | 2017-12-12 | Tesla, Inc. | System and method for mass-production of high-efficiency photovoltaic structures |
US9496429B1 (en) | 2015-12-30 | 2016-11-15 | Solarcity Corporation | System and method for tin plating metal electrodes |
US10115838B2 (en) | 2016-04-19 | 2018-10-30 | Tesla, Inc. | Photovoltaic structures with interlocking busbars |
US10672919B2 (en) | 2017-09-19 | 2020-06-02 | Tesla, Inc. | Moisture-resistant solar cells for solar roof tiles |
US11190128B2 (en) | 2018-02-27 | 2021-11-30 | Tesla, Inc. | Parallel-connected solar roof tile modules |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE632279A (de) * | 1962-05-14 | |||
US3565702A (en) * | 1969-02-14 | 1971-02-23 | Rca Corp | Depositing successive epitaxial semiconductive layers from the liquid phase |
US3675026A (en) * | 1969-06-30 | 1972-07-04 | Ibm | Converter of electromagnetic radiation to electrical power |
JPS4877765A (de) * | 1972-01-18 | 1973-10-19 | ||
US3914856A (en) * | 1972-06-05 | 1975-10-28 | Fang Pao Hsien | Economical solar cell for producing electricity |
US3973994A (en) * | 1974-03-11 | 1976-08-10 | Rca Corporation | Solar cell with grooved surface |
US3961997A (en) * | 1975-05-12 | 1976-06-08 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Fabrication of polycrystalline solar cells on low-cost substrates |
JPS51141587A (en) * | 1975-05-30 | 1976-12-06 | Sharp Kk | Method of producing solar battery |
US4072541A (en) * | 1975-11-21 | 1978-02-07 | Communications Satellite Corporation | Radiation hardened P-I-N and N-I-P solar cells |
JPS5452206A (en) * | 1977-10-03 | 1979-04-24 | Nippon Soken Inc | Method of operating otto-cycle engine |
DE2827049A1 (de) * | 1978-06-20 | 1980-01-10 | Siemens Ag | Solarzellenbatterie und verfahren zu ihrer herstellung |
DE2964810D1 (en) * | 1978-07-29 | 1983-03-24 | Fujitsu Ltd | A method of coating side walls of semiconductor devices |
US4166919A (en) * | 1978-09-25 | 1979-09-04 | Rca Corporation | Amorphous silicon solar cell allowing infrared transmission |
JPS5846074B2 (ja) * | 1979-03-12 | 1983-10-14 | 三洋電機株式会社 | 光起電力装置の製造方法 |
JP60041878B2 (en) * | 1979-02-14 | 1985-09-19 | Sharp Kk | Thin film solar cell |
JPS55115376A (en) * | 1979-02-26 | 1980-09-05 | Shunpei Yamazaki | Semiconductor device and manufacturing thereof |
FR2455362A1 (fr) * | 1979-04-23 | 1980-11-21 | Labo Electronique Physique | Procede de realisation de cellules solaires, a base de silicium polycristallin depose sur du carbone, et cellules solaires ainsi obtenues |
US4236947A (en) * | 1979-05-21 | 1980-12-02 | General Electric Company | Fabrication of grown-in p-n junctions using liquid phase epitaxial growth of silicon |
US4328390A (en) * | 1979-09-17 | 1982-05-04 | The University Of Delaware | Thin film photovoltaic cell |
JPS5934421B2 (ja) * | 1979-11-29 | 1984-08-22 | 住友電気工業株式会社 | 薄膜製造法 |
US4398056A (en) * | 1981-07-23 | 1983-08-09 | Exxon Research And Engineering Co. | Solar cell with reflecting grating substrate |
US4571448A (en) * | 1981-11-16 | 1986-02-18 | University Of Delaware | Thin film photovoltaic solar cell and method of making the same |
-
1981
- 1981-11-16 US US06/321,381 patent/US4571448A/en not_active Expired - Lifetime
-
1982
- 1982-11-08 IL IL67199A patent/IL67199A/xx not_active IP Right Cessation
- 1982-11-15 AU AU90486/82A patent/AU565091B2/en not_active Ceased
- 1982-11-15 EP EP82306066A patent/EP0079790B1/de not_active Expired
- 1982-11-15 DE DE8282306066T patent/DE3279497D1/de not_active Expired
- 1982-11-15 CA CA000415521A patent/CA1243389A/en not_active Expired
- 1982-11-15 AT AT82306066T patent/ATE41078T1/de active
- 1982-11-15 ZA ZA828384A patent/ZA828384B/xx unknown
- 1982-11-16 JP JP57199875A patent/JP2575601B2/ja not_active Expired - Lifetime
-
1987
- 1987-12-03 AU AU82127/87A patent/AU591368B2/en not_active Ceased
-
1994
- 1994-08-01 JP JP6197155A patent/JP2637922B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP2637922B2 (ja) | 1997-08-06 |
ZA828384B (en) | 1983-09-28 |
ATE41078T1 (de) | 1989-03-15 |
DE3279497D1 (en) | 1989-04-06 |
IL67199A0 (en) | 1983-03-31 |
US4571448A (en) | 1986-02-18 |
AU9048682A (en) | 1983-05-26 |
EP0079790A3 (en) | 1985-01-16 |
AU8212787A (en) | 1988-03-24 |
AU591368B2 (en) | 1989-11-30 |
JPH0758354A (ja) | 1995-03-03 |
CA1243389A (en) | 1988-10-18 |
EP0079790A2 (de) | 1983-05-25 |
AU565091B2 (en) | 1987-09-03 |
EP0079790B1 (de) | 1989-03-01 |
JPS5889874A (ja) | 1983-05-28 |
JP2575601B2 (ja) | 1997-01-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
AU565091B2 (en) | Thin film photovoltaic cell | |
Zanio | Semiconductors and semimetals | |
Cheuvart et al. | CdTe and CdZnTe crystal growth by horizontal Bridgman technique | |
US4401487A (en) | Liquid phase epitaxy of mercury cadmium telluride layer | |
EP0303320A2 (de) | Methode, um eine auf einem Isolator befindliche, dünne, defektfreie, monokristalline, aus halbleitenden Materialien bestehende Schicht herzustellen | |
US2953529A (en) | Semiconductive radiation-sensitive device | |
GB1160213A (en) | A Method of Growing Semiconductor Crystals | |
US3585087A (en) | Method of preparing green-emitting gallium phosphide diodes by epitaxial solution growth | |
US4303463A (en) | Method of peeling thin films using directional heat flow | |
US4906325A (en) | Method of making single-crystal mercury cadmium telluride layers | |
Wolff et al. | Travelling solvent techniques | |
US4396456A (en) | Method of peeling epilayers | |
US4872943A (en) | Process for making monocrystalline HGCDTE layers | |
JPS5710982A (en) | Amorphous semiconductor thin film | |
US3615928A (en) | Growth of pb1-xsnxte from nonstoichiometric melts | |
US4270973A (en) | Growth of thallium-doped silicon from a tin-thallium solution | |
JPS57167624A (en) | Liquid phase epitaxial growth method | |
JPS57190316A (en) | Manufacture of compound semiconductor device | |
JPS5734099A (en) | Epitaxial growth of liquid phase | |
IE35057B1 (en) | Methods of growing multilayer semiconductor crystals | |
JPS5796520A (en) | Method for forming silicon single crystal film | |
GB1273088A (en) | Improvements relating to composite structures for use in solid state electronics | |
SU348132A1 (ru) | Способ присоединени монокристаллических пластин кремни к инородным подложкам | |
JPS5941959B2 (ja) | 液相エピタキシャル成長装置 | |
Martinuzzi et al. | Polycrystalline Silicon Films, New Candidates for Photovoltaics? |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
KB | Patent renewed | ||
KB | Patent renewed | ||
EXP | Patent expired |