IL185743A - Stabilized photoresist structure for etching process - Google Patents

Stabilized photoresist structure for etching process

Info

Publication number
IL185743A
IL185743A IL185743A IL18574307A IL185743A IL 185743 A IL185743 A IL 185743A IL 185743 A IL185743 A IL 185743A IL 18574307 A IL18574307 A IL 18574307A IL 185743 A IL185743 A IL 185743A
Authority
IL
Israel
Prior art keywords
etching process
photoresist structure
stabilized
stabilized photoresist
etching
Prior art date
Application number
IL185743A
Other languages
English (en)
Other versions
IL185743A0 (en
Inventor
Peter Cirigliano
S M Reza Sadjadi
Eric Hudson
Zhisong Huang
Ji Soo Kim
Original Assignee
Lam Res Corp
Peter Cirigliano
S M Reza Sadjadi
Eric Hudson
Zhisong Huang
Ji Soo Kim
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/076,087 external-priority patent/US7241683B2/en
Application filed by Lam Res Corp, Peter Cirigliano, S M Reza Sadjadi, Eric Hudson, Zhisong Huang, Ji Soo Kim filed Critical Lam Res Corp
Publication of IL185743A0 publication Critical patent/IL185743A0/en
Publication of IL185743A publication Critical patent/IL185743A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4088—Processes for improving the resolution of the masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist
    • Y10S438/949—Energy beam treating radiation resist on semiconductor
IL185743A 2005-03-08 2007-09-05 Stabilized photoresist structure for etching process IL185743A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/076,087 US7241683B2 (en) 2005-03-08 2005-03-08 Stabilized photoresist structure for etching process
US11/223,363 US7491647B2 (en) 2005-03-08 2005-09-09 Etch with striation control
PCT/US2006/007643 WO2006096528A2 (en) 2005-03-08 2006-03-02 Stabilized photoresist structure for etching process

Publications (2)

Publication Number Publication Date
IL185743A0 IL185743A0 (en) 2008-01-06
IL185743A true IL185743A (en) 2010-12-30

Family

ID=36782308

Family Applications (1)

Application Number Title Priority Date Filing Date
IL185743A IL185743A (en) 2005-03-08 2007-09-05 Stabilized photoresist structure for etching process

Country Status (8)

Country Link
US (2) US7491647B2 (https=)
EP (1) EP1856717A2 (https=)
JP (2) JP5070196B2 (https=)
KR (2) KR101274382B1 (https=)
IL (1) IL185743A (https=)
SG (1) SG144148A1 (https=)
TW (1) TWI396938B (https=)
WO (1) WO2006096528A2 (https=)

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JP6877290B2 (ja) * 2017-08-03 2021-05-26 東京エレクトロン株式会社 被処理体を処理する方法
US10727045B2 (en) * 2017-09-29 2020-07-28 Taiwan Semiconductor Manufacturing Company, Ltd. Method for manufacturing a semiconductor device
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JP7323409B2 (ja) * 2019-10-01 2023-08-08 東京エレクトロン株式会社 基板処理方法、及び、プラズマ処理装置
JP2021174902A (ja) * 2020-04-27 2021-11-01 東京エレクトロン株式会社 処理方法及び基板処理装置
JP7320554B2 (ja) * 2021-04-27 2023-08-03 株式会社アルバック エッチング方法
CN120809574B (zh) * 2025-09-16 2025-11-21 上海邦芯半导体科技有限公司 硬掩膜刻蚀方法及刻蚀设备

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Also Published As

Publication number Publication date
US7491647B2 (en) 2009-02-17
TW200702900A (en) 2007-01-16
JP5070196B2 (ja) 2012-11-07
US20060194439A1 (en) 2006-08-31
KR101338841B1 (ko) 2013-12-06
US20090121324A1 (en) 2009-05-14
IL185743A0 (en) 2008-01-06
TWI396938B (zh) 2013-05-21
WO2006096528A3 (en) 2006-12-07
JP2012151510A (ja) 2012-08-09
KR20070116076A (ko) 2007-12-06
KR101274382B1 (ko) 2013-06-14
WO2006096528A2 (en) 2006-09-14
SG144148A1 (en) 2008-07-29
JP2008538857A (ja) 2008-11-06
EP1856717A2 (en) 2007-11-21
KR20130025942A (ko) 2013-03-12

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