IL143207A0 - A composition containing a cross-linkable matrix precursor and a poragen, and a porous matrix prepared therefrom - Google Patents

A composition containing a cross-linkable matrix precursor and a poragen, and a porous matrix prepared therefrom

Info

Publication number
IL143207A0
IL143207A0 IL14320799A IL14320799A IL143207A0 IL 143207 A0 IL143207 A0 IL 143207A0 IL 14320799 A IL14320799 A IL 14320799A IL 14320799 A IL14320799 A IL 14320799A IL 143207 A0 IL143207 A0 IL 143207A0
Authority
IL
Israel
Prior art keywords
cross
poragen
porous
linkable
porous matrix
Prior art date
Application number
IL14320799A
Other languages
English (en)
Original Assignee
Dow Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Chemical Co filed Critical Dow Chemical Co
Publication of IL143207A0 publication Critical patent/IL143207A0/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J9/00—Working-up of macromolecular substances to porous or cellular articles or materials; After-treatment thereof
    • C08J9/26—Working-up of macromolecular substances to porous or cellular articles or materials; After-treatment thereof by elimination of a solid phase from a macromolecular composition or article, e.g. leaching out
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L25/00—Compositions of, homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring; Compositions of derivatives of such polymers
    • C08L25/02—Homopolymers or copolymers of hydrocarbons
    • C08L25/04—Homopolymers or copolymers of styrene
    • C08L25/06—Polystyrene
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L65/00—Compositions of macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain; Compositions of derivatives of such polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2365/00—Characterised by the use of macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain; Derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2666/00—Composition of polymers characterized by a further compound in the blend, being organic macromolecular compounds, natural resins, waxes or and bituminous materials, non-macromolecular organic substances, inorganic substances or characterized by their function in the composition
    • C08L2666/02—Organic macromolecular compounds, natural resins, waxes or and bituminous materials
    • C08L2666/04—Macromolecular compounds according to groups C08L7/00 - C08L49/00, or C08L55/00 - C08L57/00; Derivatives thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Organic Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Manufacture Of Porous Articles, And Recovery And Treatment Of Waste Products (AREA)
  • Organic Insulating Materials (AREA)
  • Solid-Sorbent Or Filter-Aiding Compositions (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
IL14320799A 1998-11-24 1999-11-22 A composition containing a cross-linkable matrix precursor and a poragen, and a porous matrix prepared therefrom IL143207A0 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10971098P 1998-11-24 1998-11-24
PCT/US1999/027674 WO2000031183A1 (en) 1998-11-24 1999-11-22 A composition containing a cross-linkable matrix precursor and a poragen, and a porous matrix prepared therefrom

Publications (1)

Publication Number Publication Date
IL143207A0 true IL143207A0 (en) 2002-04-21

Family

ID=22329136

Family Applications (1)

Application Number Title Priority Date Filing Date
IL14320799A IL143207A0 (en) 1998-11-24 1999-11-22 A composition containing a cross-linkable matrix precursor and a poragen, and a porous matrix prepared therefrom

Country Status (10)

Country Link
US (4) US6630520B1 (ja)
EP (1) EP1141128B1 (ja)
JP (2) JP2002530505A (ja)
KR (1) KR100699712B1 (ja)
CN (1) CN1325560C (ja)
AT (1) ATE323132T1 (ja)
DE (1) DE69930874T2 (ja)
IL (1) IL143207A0 (ja)
TW (1) TWI253456B (ja)
WO (1) WO2000031183A1 (ja)

Families Citing this family (145)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002530505A (ja) * 1998-11-24 2002-09-17 ザ ダウ ケミカル カンパニー 架橋性マトリックス前駆体および気孔発生体を含有する組成物、並びにそれから製造された多孔質マトリックス
JP4159199B2 (ja) * 1999-09-16 2008-10-01 日東電工株式会社 多孔質体及び多孔質体の製造方法
US6420441B1 (en) * 1999-10-01 2002-07-16 Shipley Company, L.L.C. Porous materials
US6359091B1 (en) * 1999-11-22 2002-03-19 The Dow Chemical Company Polyarylene compositions with enhanced modulus profiles
JP4940499B2 (ja) * 2000-03-17 2012-05-30 東レ株式会社 低誘電率重合体
JP2001348451A (ja) * 2000-06-07 2001-12-18 Toray Ind Inc 低誘電率重合体
US6271273B1 (en) 2000-07-14 2001-08-07 Shipley Company, L.L.C. Porous materials
US20020022708A1 (en) * 2000-07-19 2002-02-21 Honeywell International Inc. Compositions and methods for thermosetting molecules in organic compositions
WO2002006377A1 (en) * 2000-07-19 2002-01-24 Dow Global Technologies Inc. Spin-on-dielectric compositions with coating enhancer
US6391932B1 (en) 2000-08-08 2002-05-21 Shipley Company, L.L.C. Porous materials
JP5350571B2 (ja) * 2000-08-21 2013-11-27 ダウ グローバル テクノロジーズ エルエルシー マイクロ電子デバイス製造に使用する有機ポリマー絶縁膜用ハードマスクとしての有機シリケート樹脂
JP4951831B2 (ja) * 2000-08-31 2012-06-13 住友ベークライト株式会社 絶縁膜用樹脂組成物及びこれを用いた絶縁膜
EP1323189A2 (en) 2000-09-13 2003-07-02 Shipley Company LLC Electronic device manufacture
US20020132496A1 (en) * 2001-02-12 2002-09-19 Ball Ian J. Ultra low-k dielectric materials
US6685983B2 (en) * 2001-03-14 2004-02-03 International Business Machines Corporation Defect-free dielectric coatings and preparation thereof using polymeric nitrogenous porogens
US6998148B1 (en) 2001-03-28 2006-02-14 Shipley Company, L.L.C. Porous materials
KR100432152B1 (ko) * 2001-04-12 2004-05-17 한국화학연구원 다분지형 폴리알킬렌 옥시드 포로젠과 이를 이용한저유전성 절연막
US20030006477A1 (en) * 2001-05-23 2003-01-09 Shipley Company, L.L.C. Porous materials
JP2003131001A (ja) 2001-05-25 2003-05-08 Shipley Co Llc 多孔性光学物質
US7141188B2 (en) * 2001-05-30 2006-11-28 Honeywell International Inc. Organic compositions
US6740685B2 (en) 2001-05-30 2004-05-25 Honeywell International Inc. Organic compositions
AU2002365226A1 (en) * 2001-11-07 2003-09-02 Dow Global Technologies Inc. Planarized microelectronic substrates
US6783862B2 (en) 2001-12-13 2004-08-31 International Business Machines Corporation Toughness, adhesion and smooth metal lines of porous low k dielectric interconnect structures
AU2003210504A1 (en) * 2002-01-15 2003-07-30 Honeywell International Inc. Organic compositions for low dielectric constant materials
US20030152693A1 (en) * 2002-02-12 2003-08-14 Su Kai C. Methods of applying a coating to an optical surface
JP4447923B2 (ja) * 2002-02-15 2010-04-07 ダウ グローバル テクノロジーズ インコーポレイティド 多官能性モノマー並びにそれらの架橋ポリマー及び多孔質フィルムの製造における使用
US7635741B2 (en) 2002-02-15 2009-12-22 Dow Global Technologies Inc. Multifunctional monomers and their use in making cross-linked polymers and porous films
US20030165625A1 (en) * 2002-02-15 2003-09-04 So Ying Hung Method of making a nanoporous film
US6890703B2 (en) * 2002-03-06 2005-05-10 International Business Machines Corporation Preparation of crosslinked particles from polymers having activatible crosslinking groups
EP1493183B1 (en) 2002-04-02 2012-12-05 Dow Global Technologies LLC Process for making air gap containing semiconducting devices and resulting semiconducting device
US7060204B2 (en) * 2002-04-29 2006-06-13 Honeywell International Inc. Organic compositions
US20040017698A1 (en) * 2002-07-25 2004-01-29 Micron Technology, Inc. Refined gate coupled noise compensation for open-drain output from semiconductor device
US7470564B2 (en) * 2002-10-28 2008-12-30 Intel Corporation Flip-chip system and method of making same
JP4765076B2 (ja) * 2003-02-20 2011-09-07 ダウ グローバル テクノロジーズ エルエルシー ポリアリーレンの合成方法及びその方法により製造されたポリアリーレン
US20040191417A1 (en) * 2003-03-28 2004-09-30 Dorie Yontz Method of integrating a porous dielectric in an integrated circuit device
WO2004089862A2 (en) 2003-04-02 2004-10-21 Dow Global Technologies Inc. Multifunctional unsymmetrically substituted monomers and polyarylene compositions therefrom
US20070027280A1 (en) * 2003-04-02 2007-02-01 Hahnfeld Jerry L Multifunctional substituted monomers and polyarylene compositions therefrom
US6855738B2 (en) * 2003-06-06 2005-02-15 Dow Global Technologies Inc. Nanoporous laminates
US20040253442A1 (en) * 2003-06-11 2004-12-16 Ervin Mubarekyan Method of forming a nanoporous film and compositions useful in such methods
US7030167B2 (en) * 2003-06-25 2006-04-18 Agilent Technologies, Inc. Nanoporous structures produced from self-assembling molecules
KR100510915B1 (ko) * 2003-07-18 2005-08-26 매그나칩 반도체 유한회사 반도체 소자의 절연막 형성 방법
US7071539B2 (en) 2003-07-28 2006-07-04 International Business Machines Corporation Chemical planarization performance for copper/low-k interconnect structures
US20080227882A1 (en) * 2003-09-19 2008-09-18 Hahnfeld Jerry L Multifunctional Monomers Containing Bound Poragens and Polyarylene Compositions Therefrom
US20070037894A1 (en) * 2003-09-19 2007-02-15 Hahnfeld Jerry L Multifunctional menomers and polyarylene compsotions therefrom
KR100612079B1 (ko) * 2003-10-09 2006-08-11 주식회사 엘지화학 방사형 다분지 고분자 및 이를 이용한 다공성 막
US7626059B2 (en) 2003-10-21 2009-12-01 Dow Global Technologies Inc. Multifunctional ethynyl substituted monomers and polyarylene compositions therefrom
US7585928B2 (en) 2003-10-21 2009-09-08 Dow Global Technologies Multifunctional monomers containing bound mesogenic poragen forming moieties and polyarylene compositions therefrom
US8053159B2 (en) 2003-11-18 2011-11-08 Honeywell International Inc. Antireflective coatings for via fill and photolithography applications and methods of preparation thereof
EP1711455A4 (en) 2004-01-23 2007-11-07 Univ Pennsylvania POLYARYL AND POLYARYLALKYNYL OLIGOMERS AMPHIPHILES AT THE FACIAL LEVEL
ATE526359T1 (de) * 2004-06-10 2011-10-15 Dow Global Technologies Llc Verfahren zur herstellung eines nanoporösen dielektrischen films
JP4878779B2 (ja) 2004-06-10 2012-02-15 富士フイルム株式会社 膜形成用組成物、絶縁膜及び電子デバイス
EP1778784B1 (de) * 2004-08-10 2008-01-09 Basf Aktiengesellschaft Polymerblends aus styrolcopolymeren und hyperverzweigten polycarbonaten oder polyestern
US7678682B2 (en) * 2004-11-12 2010-03-16 Axcelis Technologies, Inc. Ultraviolet assisted pore sealing of porous low k dielectric films
JP2006176466A (ja) * 2004-12-24 2006-07-06 Sumitomo Chemical Co Ltd 芳香族の化合物
TWI261915B (en) * 2005-01-07 2006-09-11 Ind Tech Res Inst Phase change memory and fabricating method thereof
US7754818B2 (en) * 2005-01-11 2010-07-13 Brewer Science Inc. Gap fill materials and bottom anti-reflective coatings comprising hyperbranched polymers
US8535702B2 (en) * 2005-02-01 2013-09-17 Boston Scientific Scimed, Inc. Medical devices having porous polymeric regions for controlled drug delivery and regulated biocompatibility
US7482389B2 (en) * 2005-04-20 2009-01-27 International Business Machines Corporation Nanoporous media with lamellar structures
US7960442B2 (en) 2005-04-20 2011-06-14 International Business Machines Corporation Nanoporous media templated from unsymmetrical amphiphilic porogens
US7723438B2 (en) 2005-04-28 2010-05-25 International Business Machines Corporation Surface-decorated polymeric amphiphile porogens for the templation of nanoporous materials
US7459183B2 (en) * 2005-07-27 2008-12-02 International Business Machines Corporation Method of forming low-K interlevel dielectric layers and structures
JP4788415B2 (ja) * 2006-03-15 2011-10-05 ソニー株式会社 半導体装置の製造方法
WO2007134160A2 (en) * 2006-05-12 2007-11-22 Massachusetts Institute Of Technology Temperature-jump dynamic nuclear polarization
US8053375B1 (en) * 2006-11-03 2011-11-08 Advanced Technology Materials, Inc. Super-dry reagent compositions for formation of ultra low k films
US8394483B2 (en) 2007-01-24 2013-03-12 Micron Technology, Inc. Two-dimensional arrays of holes with sub-lithographic diameters formed by block copolymer self-assembly
US8642246B2 (en) 2007-02-26 2014-02-04 Honeywell International Inc. Compositions, coatings and films for tri-layer patterning applications and methods of preparation thereof
US8083953B2 (en) 2007-03-06 2011-12-27 Micron Technology, Inc. Registered structure formation via the application of directed thermal energy to diblock copolymer films
WO2008115848A1 (en) * 2007-03-19 2008-09-25 University Of Massachusetts Method of producing nanopatterned templates
US8557128B2 (en) 2007-03-22 2013-10-15 Micron Technology, Inc. Sub-10 nm line features via rapid graphoepitaxial self-assembly of amphiphilic monolayers
US8097175B2 (en) 2008-10-28 2012-01-17 Micron Technology, Inc. Method for selectively permeating a self-assembled block copolymer, method for forming metal oxide structures, method for forming a metal oxide pattern, and method for patterning a semiconductor structure
US7959975B2 (en) * 2007-04-18 2011-06-14 Micron Technology, Inc. Methods of patterning a substrate
US8294139B2 (en) 2007-06-21 2012-10-23 Micron Technology, Inc. Multilayer antireflection coatings, structures and devices including the same and methods of making the same
US8372295B2 (en) * 2007-04-20 2013-02-12 Micron Technology, Inc. Extensions of self-assembled structures to increased dimensions via a “bootstrap” self-templating method
US8404124B2 (en) 2007-06-12 2013-03-26 Micron Technology, Inc. Alternating self-assembling morphologies of diblock copolymers controlled by variations in surfaces
US8080615B2 (en) 2007-06-19 2011-12-20 Micron Technology, Inc. Crosslinkable graft polymer non-preferentially wetted by polystyrene and polyethylene oxide
JP2009079137A (ja) * 2007-09-26 2009-04-16 Fujifilm Corp 膜形成用組成物及び膜の製造方法
US20100294989A1 (en) * 2007-12-28 2010-11-25 Shaffer Ii Edward O Small scale functional materials
WO2009085083A1 (en) * 2007-12-28 2009-07-09 Dow Global Technologies Inc. Phase compensation film comprising polymer nanoparticles imbibed with liquid crystal material
US8999492B2 (en) 2008-02-05 2015-04-07 Micron Technology, Inc. Method to produce nanometer-sized features with directed assembly of block copolymers
US8101261B2 (en) 2008-02-13 2012-01-24 Micron Technology, Inc. One-dimensional arrays of block copolymer cylinders and applications thereof
JP2009212260A (ja) * 2008-03-04 2009-09-17 Fujifilm Corp 膜
US8426313B2 (en) 2008-03-21 2013-04-23 Micron Technology, Inc. Thermal anneal of block copolymer films with top interface constrained to wet both blocks with equal preference
US8425982B2 (en) 2008-03-21 2013-04-23 Micron Technology, Inc. Methods of improving long range order in self-assembly of block copolymer films with ionic liquids
JP2009242440A (ja) * 2008-03-28 2009-10-22 Fujifilm Corp 絶縁膜形成用組成物
US8114300B2 (en) 2008-04-21 2012-02-14 Micron Technology, Inc. Multi-layer method for formation of registered arrays of cylindrical pores in polymer films
US8114301B2 (en) 2008-05-02 2012-02-14 Micron Technology, Inc. Graphoepitaxial self-assembly of arrays of downward facing half-cylinders
WO2010021234A1 (ja) * 2008-08-19 2010-02-25 財団法人川村理化学研究所 有機ポリマー多孔質体、及びその製造方法
US8247033B2 (en) * 2008-09-19 2012-08-21 The University Of Massachusetts Self-assembly of block copolymers on topographically patterned polymeric substrates
US8211737B2 (en) * 2008-09-19 2012-07-03 The University Of Massachusetts Method of producing nanopatterned articles, and articles produced thereby
US8518837B2 (en) * 2008-09-25 2013-08-27 The University Of Massachusetts Method of producing nanopatterned articles using surface-reconstructed block copolymer films
JP2012061599A (ja) * 2009-01-21 2012-03-29 Nissan Chem Ind Ltd ベンゾシクロブテン樹脂のインプリント技術への適用及び当該技術によるパターン形成方法
US9138308B2 (en) 2010-02-03 2015-09-22 Apollo Endosurgery, Inc. Mucosal tissue adhesion via textured surface
ES2623475T3 (es) 2010-05-11 2017-07-11 Allergan, Inc. Composiciones de porógenos, métodos para hacerlas y usos
US9156682B2 (en) 2011-05-25 2015-10-13 The University Of Massachusetts Method of forming oriented block copolymer line patterns, block copolymer line patterns formed thereby, and their use to form patterned articles
US8864898B2 (en) 2011-05-31 2014-10-21 Honeywell International Inc. Coating formulations for optical elements
US9120898B2 (en) 2011-07-08 2015-09-01 Baker Hughes Incorporated Method of curing thermoplastic polymer for shape memory material
US8939222B2 (en) 2011-09-12 2015-01-27 Baker Hughes Incorporated Shaped memory polyphenylene sulfide (PPS) for downhole packer applications
US8829119B2 (en) * 2011-09-27 2014-09-09 Baker Hughes Incorporated Polyarylene compositions for downhole applications, methods of manufacture, and uses thereof
US8900963B2 (en) 2011-11-02 2014-12-02 Micron Technology, Inc. Methods of forming semiconductor device structures, and related structures
US9144925B2 (en) 2012-01-04 2015-09-29 Baker Hughes Incorporated Shape memory polyphenylene sulfide manufacturing, process, and composition
CN102658037B (zh) * 2012-04-26 2014-02-26 青岛科技大学 一种聚偏氟乙烯平板微孔膜的制备方法
WO2014022657A1 (en) 2012-08-02 2014-02-06 Allergan, Inc. Mucosal tissue adhesion via textured surface
KR101394396B1 (ko) * 2012-08-06 2014-05-13 광주과학기술원 공유결합 망상구조를 가지는 다공성 고분자 분리막 및 그 제조방법
WO2014052724A1 (en) 2012-09-28 2014-04-03 Allergan, Inc. Porogen compositions, methods of making and uses
US9087699B2 (en) 2012-10-05 2015-07-21 Micron Technology, Inc. Methods of forming an array of openings in a substrate, and related methods of forming a semiconductor device structure
EP2909253B1 (en) 2012-10-22 2021-11-10 Delsper LP Cross-linked organic polymer compositions
US9269623B2 (en) 2012-10-25 2016-02-23 Rohm And Haas Electronic Materials Llc Ephemeral bonding
US9273215B2 (en) 2012-10-30 2016-03-01 Rohm And Haas Electronic Materials Llc Adhesion promoter
US9707642B2 (en) 2012-12-07 2017-07-18 Baker Hughes Incorporated Toughened solder for downhole applications, methods of manufacture thereof and articles comprising the same
CA2899324C (en) 2013-01-28 2021-06-15 Delsper LP Anti-extrusion compositions for sealing and wear components
CA2906858C (en) 2013-03-15 2021-09-21 Delsper LP Cross-linked organic polymers for use as elastomers
US9229328B2 (en) 2013-05-02 2016-01-05 Micron Technology, Inc. Methods of forming semiconductor device structures, and related semiconductor device structures
US9828620B2 (en) 2013-06-28 2017-11-28 Verily Life Sciences Llc Porous polymeric formulation prepared using monomer
US9750445B2 (en) 2013-06-28 2017-09-05 Verily Life Sciences Llc Porous polymeric formulation prepared using porogens
US9441258B2 (en) 2013-06-28 2016-09-13 Verily Life Sciences LLP Enzyme immobilization by crosslinking
US9551680B2 (en) 2013-06-28 2017-01-24 Verily Life Sciences Llc Chemically reactive enzyme immobilization
US9177795B2 (en) 2013-09-27 2015-11-03 Micron Technology, Inc. Methods of forming nanostructures including metal oxides
US9763605B2 (en) 2013-11-27 2017-09-19 Verily Life Sciences Llc Adjustment of sensor sensitivity by controlling copolymer film thickness through a controlled drying step
US9617578B2 (en) 2013-12-06 2017-04-11 Verily Life Sciences Llc Sensor membrane with low temperature coefficient
US9834805B2 (en) 2013-12-23 2017-12-05 Verily Life Sciences Llc Two-layer analyte sensor
US9739746B1 (en) 2013-12-23 2017-08-22 Google Inc. Analyte sensor incorporating negatively charged moieties
US9855359B2 (en) 2013-12-23 2018-01-02 Verily Life Sciences Llc Analyte sensors with ethylene oxide immunity
US9153357B1 (en) 2014-03-27 2015-10-06 Rohm And Haas Electronic Materials Llc Adhesion promoter
US10369248B2 (en) 2014-07-29 2019-08-06 The United States Of America As Represented By The Secretary Of The Army Porous polymer composites
US9868820B2 (en) 2014-08-29 2018-01-16 Rohm And Haas Electronic Materials Llc Polyarylene materials
US9481810B2 (en) 2014-12-15 2016-11-01 Rohm And Haas Electronic Materials Llc Silylated polyarylenes
WO2016137445A1 (en) 2015-02-24 2016-09-01 South Dakota Board Of Regents Polycarbonates having superior dielectric properties suitable for energy dense capacitors
US9486685B2 (en) 2015-02-25 2016-11-08 Jay Rambo Apparatus for providing swing technique feedback
US9296915B1 (en) 2015-04-10 2016-03-29 Dow Global Technologies Llc Toughened arylcyclobutene polymers
JP6803842B2 (ja) 2015-04-13 2020-12-23 ハネウェル・インターナショナル・インコーポレーテッドＨｏｎｅｙｗｅｌｌ Ｉｎｔｅｒｎａｔｉｏｎａｌ Ｉｎｃ． オプトエレクトロニクス用途のためのポリシロキサン製剤及びコーティング
US20170009006A1 (en) * 2015-07-06 2017-01-12 Rohm And Haas Electronic Materials Llc Polyarylene materials
US10340182B2 (en) 2015-11-30 2019-07-02 International Business Machines Corporation Enhanced via fill material and processing for dual damscene integration
US10190100B1 (en) 2015-12-28 2019-01-29 Verily Life Sciences Llc Chemical modification of glucose oxidase and its application to biosensors
US10790146B2 (en) 2016-12-05 2020-09-29 Rohm And Haas Electronic Materials Llc Aromatic resins for underlayers
US11175581B2 (en) 2016-12-05 2021-11-16 Rohm And Haas Electronic Materials Llc Aromatic resins for underlayers
US20180171069A1 (en) * 2016-12-19 2018-06-21 Rohm And Haas Electronic Materials Llc Polyarylene resins
CN107903436A (zh) * 2017-11-28 2018-04-13 烟台史密得机电设备制造有限公司 一种涂覆多孔环氧树脂泡沫的制备方法
EP3623136B1 (en) 2018-09-14 2023-11-29 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Method for producing three-dimensional hydrogel structures and device for the layerwise building-up of such hydrogel structures
CN111362587B (zh) * 2020-04-28 2022-05-24 东莞南玻太阳能玻璃有限公司 一种高硬度防潮增透太阳能玻璃及其制备方法
JPWO2022210068A1 (ja) 2021-03-30 2022-10-06
KR20230162674A (ko) 2021-03-31 2023-11-28 닛산 가가쿠 가부시키가이샤 적층체, 박리제 조성물 및 가공된 반도체 기판의 제조 방법
JPWO2022210262A1 (ja) 2021-03-31 2022-10-06
WO2022210238A1 (ja) 2021-03-31 2022-10-06 日産化学株式会社 積層体、剥離剤組成物及び加工された半導体基板の製造方法
WO2023074324A1 (ja) 2021-10-29 2023-05-04 日産化学株式会社 積層体、剥離剤組成物及び加工された半導体基板の製造方法
US11982377B1 (en) * 2021-11-08 2024-05-14 Meta Platforms Technologies, Llc Fluidic devices

Family Cites Families (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US588329A (en) * 1897-08-17 Rotary blower
US554305A (en) * 1896-02-11 Sash-fastener
GB154644A (en) 1919-06-05 1920-12-06 British Thomson Houston Co Ltd Improvements in and relating to driving mechanism for paper making machines
US3705118A (en) 1971-01-11 1972-12-05 Ibm Process for forming a microporous cellular polyimide
GB1473946A (en) 1973-05-03 1977-05-18 Exxon Research Engineering Co Cellular heterocyclic polymer structures
US4201820A (en) 1973-05-03 1980-05-06 Exxon Research & Engineering Co. Microcellular heterocyclic polymer structures
US4272467A (en) 1975-12-22 1981-06-09 Exxon Research & Engineering Co. Method for producing an essentially gas and liquid impermeable low density, closed-cell, microcellular polyparabanic acid article
US4400865A (en) 1980-07-08 1983-08-30 International Business Machines Corporation Self-aligned metal process for integrated circuit metallization
US4426769A (en) 1981-08-14 1984-01-24 Amp Incorporated Moisture getter for integrated circuit packages
US4859715A (en) 1984-05-18 1989-08-22 Raychem Corporation Microporous poly (arylether ketone) article
US4540763A (en) 1984-09-14 1985-09-10 The Dow Chemical Company Polymers derived from poly(arylcyclobutenes)
JPS61137711A (ja) 1984-12-10 1986-06-25 Asahi Chem Ind Co Ltd 多孔質プラスチツク成形品及びその製造方法
JPS6211617A (ja) 1985-07-09 1987-01-20 Fuji Photo Film Co Ltd 微孔性膜の製造方法
US4812588A (en) 1987-12-14 1989-03-14 The Dow Chemical Company Polyorganosiloxane-bridged bisbenzocyclobutene monomers
JPH01254758A (ja) 1988-04-01 1989-10-11 Junkosha Co Ltd 低誘電率複合材料
JPH0756763B2 (ja) 1988-04-01 1995-06-14 株式会社潤工社 超電導ケーブル
US5023380A (en) 1989-06-09 1991-06-11 The Dow Chemical Company Perfluorovinyl compounds
US5021602A (en) 1989-06-09 1991-06-04 The Dow Chemical Company Reactive compounds containing perfluorocyclobutane rings
US5037917A (en) 1989-06-09 1991-08-06 The Dow Chemical Company Perfluorocyclobutane ring-containing polymers
US5246782A (en) 1990-12-10 1993-09-21 The Dow Chemical Company Laminates of polymers having perfluorocyclobutane rings and polymers containing perfluorocyclobutane rings
US5155175A (en) 1989-12-08 1992-10-13 Intellectual Property Law Dept. Crosslinkable fluorinated polyarylene ether composition
US5227103A (en) 1990-02-07 1993-07-13 E. I. Du Pont De Nemours And Company High speed insulated conductors
US5179188A (en) 1990-04-17 1993-01-12 Raychem Corporation Crosslinkable fluorinated aromatic ether composition
US5115082A (en) 1990-04-17 1992-05-19 Raychem Corporation Fluorinated poly(arylene ether)
JP2802172B2 (ja) 1990-12-06 1998-09-24 松下電工株式会社 複合誘電体およびプリント回路用基板
US5714243A (en) 1990-12-10 1998-02-03 Xerox Corporation Dielectric image receiving member
US5155082A (en) * 1991-04-12 1992-10-13 Allied-Signal Inc. Catalyst for the manufacture of chlorofluorocarbons, hydrochlorofluorocarbons and hydrofluorocarbons
JPH0799646B2 (ja) 1991-05-03 1995-10-25 インターナショナル・ビジネス・マシーンズ・コーポレイション 分子的多孔性エーロゲルで充填された低誘電率複合積層品
JP2531906B2 (ja) * 1991-09-13 1996-09-04 インターナショナル・ビジネス・マシーンズ・コーポレイション 発泡重合体
JPH05168880A (ja) 1991-12-20 1993-07-02 Mitsubishi Kasei Corp 複合分離膜
US5235044A (en) 1992-09-09 1993-08-10 Raychem Corporation Compounds having oxadiazole and triazene moieties, crosslinkable polymers therefrom, and methods therefor
FR2700883B1 (fr) 1993-01-26 1995-02-24 Thomson Csf Procédé d'obtention de polymère à permittivité réduite.
CA2115334A1 (en) 1993-02-10 1994-08-11 Isao Tomioka Film forming solution, porous film obtained therefrom and coated material with the porous film
FR2701602B1 (fr) 1993-02-12 1995-03-31 Thomson Csf Détecteur thermique comprenant un isolant thermique en polymère expansé.
US5290820A (en) 1993-07-29 1994-03-01 Shell Oil Company Process for preparing low density porous crosslinked polymeric materials
JPH07182291A (ja) 1993-12-22 1995-07-21 Casio Comput Co Ltd データバンク装置
US5486493A (en) 1994-02-25 1996-01-23 Jeng; Shin-Puu Planarized multi-level interconnect scheme with embedded low-dielectric constant insulators
US5422377A (en) 1994-04-06 1995-06-06 Sandia Corporation Microporous polymer films and methods of their production
US5449427A (en) 1994-05-23 1995-09-12 General Electric Company Processing low dielectric constant materials for high speed electronics
US5785787A (en) * 1994-05-23 1998-07-28 General Electric Company Processing low dielectric constant materials for high speed electronics
US5550405A (en) 1994-12-21 1996-08-27 Advanced Micro Devices, Incorporated Processing techniques for achieving production-worthy, low dielectric, low interconnect resistance and high performance ICS
US5540997A (en) 1995-03-13 1996-07-30 The Dow Chemical Company Alignment layer for a liquid crystal in a liquid crystal display device
US5986045A (en) 1995-06-26 1999-11-16 Alliedsignal Inc. Poly(arylene ether) compositions and the method for their manufacture
US5874516A (en) 1995-07-13 1999-02-23 Air Products And Chemicals, Inc. Nonfunctionalized poly(arylene ethers)
WO1997010193A1 (en) 1995-09-12 1997-03-20 The Dow Chemical Company Ethynyl substituted aromatic compounds, synthesis, polymers and uses thereof
JP3115215B2 (ja) 1995-10-05 2000-12-04 松下電器産業株式会社 低誘電率プラスチック絶縁フィルムおよびその製造方法
US5726211A (en) 1996-03-21 1998-03-10 International Business Machines Corporation Process for making a foamed elastometric polymer
US5700844A (en) 1996-04-09 1997-12-23 International Business Machines Corporation Process for making a foamed polymer
US5965679A (en) * 1996-09-10 1999-10-12 The Dow Chemical Company Polyphenylene oligomers and polymers
US5767014A (en) 1996-10-28 1998-06-16 International Business Machines Corporation Integrated circuit and process for its manufacture
US5895263A (en) 1996-12-19 1999-04-20 International Business Machines Corporation Process for manufacture of integrated circuit device
US5883219A (en) 1997-05-29 1999-03-16 International Business Machines Corporation Integrated circuit device and process for its manufacture
US6110649A (en) 1997-11-19 2000-08-29 International Business Machines Corporation Process for manufacture of integrated circuit device
RU2195050C2 (ru) 1998-06-05 2002-12-20 Джорджиэ Тек Рисеч Копэрейшн Способ получения пористой изоляционной композиции (варианты), композиция, используемая для получения пористого изоляционного материала (варианты), и полупроводниковое устройство
US6093636A (en) 1998-07-08 2000-07-25 International Business Machines Corporation Process for manufacture of integrated circuit device using a matrix comprising porous high temperature thermosets
US6114458A (en) 1998-09-23 2000-09-05 International Business Machines Corporation Highly branched radial block copolymers
US6313185B1 (en) 1998-09-24 2001-11-06 Honeywell International Inc. Polymers having backbones with reactive groups employed in crosslinking as precursors to nanoporous thin film structures
JP2002530505A (ja) * 1998-11-24 2002-09-17 ザ ダウ ケミカル カンパニー 架橋性マトリックス前駆体および気孔発生体を含有する組成物、並びにそれから製造された多孔質マトリックス
US6172128B1 (en) 1999-04-09 2001-01-09 Honeywell International Inc. Nanoporous polymers crosslinked via cyclic structures
US6156812A (en) 1999-04-09 2000-12-05 Honeywell International Inc. Nanoporous material fabricated using polymeric template strands
US6420441B1 (en) 1999-10-01 2002-07-16 Shipley Company, L.L.C. Porous materials
US6107357A (en) 1999-11-16 2000-08-22 International Business Machines Corporatrion Dielectric compositions and method for their manufacture
US6359091B1 (en) 1999-11-22 2002-03-19 The Dow Chemical Company Polyarylene compositions with enhanced modulus profiles

Also Published As

Publication number Publication date
DE69930874T2 (de) 2006-11-02
JP2011012272A (ja) 2011-01-20
ATE323132T1 (de) 2006-04-15
US6887910B2 (en) 2005-05-03
KR100699712B1 (ko) 2007-03-27
JP5209679B2 (ja) 2013-06-12
DE69930874D1 (de) 2006-05-24
WO2000031183A1 (en) 2000-06-02
EP1141128B1 (en) 2006-04-12
CN1325560C (zh) 2007-07-11
US20030083392A1 (en) 2003-05-01
TWI253456B (en) 2006-04-21
CN1328589A (zh) 2001-12-26
US6630520B1 (en) 2003-10-07
KR20010107984A (ko) 2001-12-07
JP2002530505A (ja) 2002-09-17
EP1141128A1 (en) 2001-10-10
US20050014855A1 (en) 2005-01-20
US7109249B2 (en) 2006-09-19
US6653358B2 (en) 2003-11-25
US20030092785A1 (en) 2003-05-15

Similar Documents

Publication Publication Date Title
IL143207A0 (en) A composition containing a cross-linkable matrix precursor and a poragen, and a porous matrix prepared therefrom
TWI268283B (en) Porous materials
CA2467690A1 (en) Hot melt conductor paste composition
AU2001232298A1 (en) Adhesive composition, process for producing the same, adhesive film made with the same, substrate for semiconductor mounting, and semiconductor device
EP1150346A3 (en) A process for preparing insulating material having low dielectric constant
CA2160394A1 (en) Method of Making an Organic Thin Film Transistor, and Article Made by the Method
MY100118A (en) Improved micro-electronics devices and methods of manufacturing same.
WO1998016205A3 (en) Stable glassy state powder formulations
MY132738A (en) Highly thermally conductive yet highly conformable alumina filled composition and method of making the same
SG97948A1 (en) Resin composition for semiconductor encapsulation, semiconductor device comprising the same and process for the production of semiconductor device using the same
EP1120818A4 (en) SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING SAME, SEMICONDUCTOR DEVICE COMPRISING SUCH A SUBSTRATE, AND METHOD FOR MANUFACTURING THE SAME
EP0670592A3 (en) Semiconductor devices and their manufacture using the crystal orientation dependency of dating.
ATE353536T1 (de) Niedertemperaturverfahren und zusammensetzungen zur herstellung elektischer leiter
EP0913507A4 (en) PLANT FOR CRYSTAL GROWTH AND THE METHOD FOR CRYSTAL GROWTH USING THIS METHOD
MY117024A (en) Die attach adhesive compositions.
EP0226208A3 (en) Insulating film for semiconductor, production of the same and liquid composition for producing the same
AU635049B2 (en) Encapsulation method, microelectronic devices made therefrom, and heat curable compositions
DE59304518D1 (de) Beschichtetes Material, dessen Herstellung und Verwendung
MY124379A (en) Semiconductor component, in particular a solar cell, and process for manufacture of same
TW343372B (en) Semiconductor device with high dielectric constant insulator material
TW200605220A (en) Organic siloxane film, semiconductor device using same, flat panel display and raw material liquid
AU8241498A (en) Electrochromic light-attenuation or -filtration device
AU7266587A (en) Luminescent material, process for producing it and luminescent semiconductor device using it
TW332920B (en) Display device
EP0324555A3 (en) Substrate for hybrid ic, hybrid ic using the substrate and its application