HUE053179T2 - Hozzáadott rubídiumot és/vagy céziumot tartalmazó napelem eszközök nagysebességû gyártása - Google Patents

Hozzáadott rubídiumot és/vagy céziumot tartalmazó napelem eszközök nagysebességû gyártása

Info

Publication number
HUE053179T2
HUE053179T2 HUE17704016A HUE17704016A HUE053179T2 HU E053179 T2 HUE053179 T2 HU E053179T2 HU E17704016 A HUE17704016 A HU E17704016A HU E17704016 A HUE17704016 A HU E17704016A HU E053179 T2 HUE053179 T2 HU E053179T2
Authority
HU
Hungary
Prior art keywords
cesium
high speed
solar cells
cells devices
fabricating
Prior art date
Application number
HUE17704016A
Other languages
English (en)
Inventor
Patrick Reinhard
Adrian Chirila
Stephan Brunken
Moritz Wehrle
Original Assignee
Flisom Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Flisom Ag filed Critical Flisom Ag
Publication of HUE053179T2 publication Critical patent/HUE053179T2/hu

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • H01L31/0323—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2 characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02491—Conductive materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03926—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
    • H01L31/03928—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate including AIBIIICVI compound, e.g. CIS, CIGS deposited on metal or polymer foils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)
HUE17704016A 2016-02-11 2017-02-09 Hozzáadott rubídiumot és/vagy céziumot tartalmazó napelem eszközök nagysebességû gyártása HUE053179T2 (hu)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IB2016050728 2016-02-11

Publications (1)

Publication Number Publication Date
HUE053179T2 true HUE053179T2 (hu) 2021-06-28

Family

ID=57963187

Family Applications (2)

Application Number Title Priority Date Filing Date
HUE17703077A HUE053005T2 (hu) 2016-02-11 2017-01-27 Vékonyréteg optoelektronikai eszközök gyártása hozzáadott rubídiummal és/vagy céziummal
HUE17704016A HUE053179T2 (hu) 2016-02-11 2017-02-09 Hozzáadott rubídiumot és/vagy céziumot tartalmazó napelem eszközök nagysebességû gyártása

Family Applications Before (1)

Application Number Title Priority Date Filing Date
HUE17703077A HUE053005T2 (hu) 2016-02-11 2017-01-27 Vékonyréteg optoelektronikai eszközök gyártása hozzáadott rubídiummal és/vagy céziummal

Country Status (4)

Country Link
US (2) US10658532B2 (hu)
EP (2) EP3414780B1 (hu)
HU (2) HUE053005T2 (hu)
WO (2) WO2017137268A1 (hu)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI677105B (zh) 2014-05-23 2019-11-11 瑞士商弗里松股份有限公司 製造薄膜光電子裝置之方法及可藉由該方法獲得的薄膜光電子裝置
TWI661991B (zh) 2014-09-18 2019-06-11 瑞士商弗里松股份有限公司 用於製造薄膜裝置之自組裝圖案化
HUE053775T2 (hu) 2016-02-11 2021-07-28 Flisom Ag Önszervezõdõ mintázódás vékonyréteg eszközök gyártására
EP3414780B1 (en) 2016-02-11 2020-12-02 Flisom AG Fabricating thin-film optoelectronic devices with added rubidium and/or cesium
KR102452088B1 (ko) * 2020-11-30 2022-10-11 한국과학기술연구원 씨스루형 박막 태양전지 모듈 및 그의 제조방법

Family Cites Families (80)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE442824C (de) 1927-05-23 Paul Haubner Schleifenkipper
US4228315A (en) 1979-05-04 1980-10-14 Rca Corporation Solar cell grid patterns
US4332880A (en) 1979-09-04 1982-06-01 Energy Conversion Devices, Inc. Imaging film with improved passivating layers
US4335266A (en) 1980-12-31 1982-06-15 The Boeing Company Methods for forming thin-film heterojunction solar cells from I-III-VI.sub.2
US4465575A (en) 1981-09-21 1984-08-14 Atlantic Richfield Company Method for forming photovoltaic cells employing multinary semiconductor films
US5141564A (en) 1988-05-03 1992-08-25 The Boeing Company Mixed ternary heterojunction solar cell
US4961829A (en) 1988-09-30 1990-10-09 Semi-Conductor Devices, A Tadiran-Rafael Partnership Passivation of semiconductor surfaces
US5441897A (en) 1993-04-12 1995-08-15 Midwest Research Institute Method of fabricating high-efficiency Cu(In,Ga)(SeS)2 thin films for solar cells
SE508676C2 (sv) 1994-10-21 1998-10-26 Nordic Solar Energy Ab Förfarande för framställning av tunnfilmssolceller
EP0743686A3 (en) 1995-05-15 1998-12-02 Matsushita Electric Industrial Co., Ltd Precursor for semiconductor thin films and method for producing semiconductor thin films
CA2184667C (en) 1996-09-03 2000-06-20 Bradley Trent Polischuk Multilayer plate for x-ray imaging and method of producing same
JP3249408B2 (ja) 1996-10-25 2002-01-21 昭和シェル石油株式会社 薄膜太陽電池の薄膜光吸収層の製造方法及び製造装置
US6258620B1 (en) 1997-10-15 2001-07-10 University Of South Florida Method of manufacturing CIGS photovoltaic devices
AU2249201A (en) 1999-11-16 2001-05-30 Midwest Research Institute A novel processing approach towards the formation of thin-film Cu(In,Ga)Se2
JP3732993B2 (ja) 2000-02-09 2006-01-11 シャープ株式会社 太陽電池セルおよびその製造方法
US6441301B1 (en) 2000-03-23 2002-08-27 Matsushita Electric Industrial Co., Ltd. Solar cell and method of manufacturing the same
EP1291932A3 (en) 2001-09-05 2006-10-18 Konica Corporation Organic thin-film semiconductor element and manufacturing method for the same
DE10259258B4 (de) 2002-12-11 2006-03-16 Würth Solar Gmbh & Co. Kg Verfahren zur Herstellung einer Verbindungshalbleiterschicht mit Alkalimetallzusatz
KR101115484B1 (ko) 2004-03-15 2012-02-27 솔로파워, 인코포레이티드 태양 전지 제작용 반도체 박층의 증착을 위한 기술 및 장치
CN101233260A (zh) 2004-11-10 2008-07-30 德斯塔尔科技公司 光伏衬底沉积中的压力控制系统
US20060145190A1 (en) 2004-12-31 2006-07-06 Salzman David B Surface passivation for III-V compound semiconductors
WO2006076788A1 (en) 2005-01-18 2006-07-27 University Of Saskatchewan Dark current reduction in metal/a-se/metal structures for application as an x-ray photoconductor layer in digital image detectors
JP5662001B2 (ja) 2005-12-21 2015-01-28 クロメック リミテッド 半導体デバイス及びその製造方法
WO2008088570A1 (en) 2006-04-18 2008-07-24 Itn Energy Systems, Inc. Reinforcing structures for thin-film photovoltaic device substrates, and associated methods
US8158450B1 (en) * 2006-05-05 2012-04-17 Nanosolar, Inc. Barrier films and high throughput manufacturing processes for photovoltaic devices
US7644250B2 (en) 2006-06-30 2010-01-05 Intel Corporation Defining pin functionality at device power on
US7528448B2 (en) 2006-07-17 2009-05-05 E.I. Du Pont De Nemours And Company Thin film transistor comprising novel conductor and dielectric compositions
US20080023336A1 (en) 2006-07-26 2008-01-31 Basol Bulent M Technique for doping compound layers used in solar cell fabrication
US7867551B2 (en) 2006-09-21 2011-01-11 Solopower, Inc. Processing method for group IBIIIAVIA semiconductor layer growth
US20080169025A1 (en) 2006-12-08 2008-07-17 Basol Bulent M Doping techniques for group ibiiiavia compound layers
TWI330891B (en) 2006-12-29 2010-09-21 Ind Tech Res Inst Thin film solar cell module of see-through type
US7982126B2 (en) 2007-05-21 2011-07-19 Macfarlane Alexander T Photovoltaic module with improved heat transfer and recovery potential
WO2009041658A1 (ja) 2007-09-28 2009-04-02 Fujifilm Corporation 太陽電池用基板および太陽電池
JP5255806B2 (ja) 2007-09-28 2013-08-07 東京エレクトロン株式会社 成膜装置の制御方法、成膜方法および成膜装置
US8771419B2 (en) 2007-10-05 2014-07-08 Solopower Systems, Inc. Roll to roll evaporation tool for solar absorber precursor formation
CN101785112A (zh) 2007-12-13 2010-07-21 第一太阳能有限公司 光伏模块的并联互连接的系统和方法
NO342873B1 (no) * 2008-02-11 2018-08-20 Inst Energiteknik Halvlederkomponent
JP4384237B2 (ja) 2008-05-19 2009-12-16 昭和シェル石油株式会社 Ｃｉｓ系薄膜太陽電池の製造方法
US8003430B1 (en) 2008-10-06 2011-08-23 Stion Corporation Sulfide species treatment of thin film photovoltaic cell and manufacturing method
JP4637244B2 (ja) 2009-01-09 2011-02-23 シャープ株式会社 薄膜太陽電池モジュール
US8709856B2 (en) * 2009-03-09 2014-04-29 Zetta Research and Development LLC—AQT Series Enhancement of semiconducting photovoltaic absorbers by the addition of alkali salts through solution coating techniques
JP5229901B2 (ja) 2009-03-09 2013-07-03 富士フイルム株式会社 光電変換素子、及び太陽電池
JP5185171B2 (ja) 2009-03-24 2013-04-17 本田技研工業株式会社 薄膜太陽電池の光吸収層の形成方法
JP4745449B2 (ja) * 2009-03-30 2011-08-10 富士フイルム株式会社 光電変換素子とその製造方法、太陽電池、及びターゲット
US8236599B2 (en) 2009-04-09 2012-08-07 State of Oregon acting by and through the State Board of Higher Education Solution-based process for making inorganic materials
US8134069B2 (en) 2009-04-13 2012-03-13 Miasole Method and apparatus for controllable sodium delivery for thin film photovoltaic materials
US7785921B1 (en) 2009-04-13 2010-08-31 Miasole Barrier for doped molybdenum targets
CN102396073B (zh) 2009-04-14 2015-09-09 三菱电机株式会社 光电动势装置及其制造方法
EP2463929A4 (en) 2009-08-04 2013-10-02 Mitsubishi Chem Corp PHOTOELECTRIC CONVERTER ELEMENT AND SOLAR CELL THEREWITH
KR101031246B1 (ko) 2009-09-16 2011-04-29 주성엔지니어링(주) 박막형 태양전지 및 그 제조방법, 및 그를 이용한 박막형 태양전지 모듈 및 태양광 발전 시스템
TW201112438A (en) 2009-09-25 2011-04-01 Zhi-Huang Lai Target, manufacturing process of manufacturing thin film solar cell and the products thereof
WO2011040645A1 (en) 2009-09-30 2011-04-07 Fujifilm Corporation Photoelectric conversion device, method for producing the same, and solar battery
JP2011100976A (ja) 2009-10-09 2011-05-19 Fujifilm Corp 光電変換素子とその製造方法、及び太陽電池
DE112010004478T5 (de) 2009-11-17 2012-10-11 Mitsubishi Electric Corporation Dünnschichtsolarzelle und Verfahren zu deren Herstellung
EP2504281A1 (en) 2009-11-25 2012-10-03 E. I. du Pont de Nemours and Company Syntheses of quaternary chalcogenides in cesium, rubidium, barium and lanthanum containing fluxes
US20120258567A1 (en) 2009-12-07 2012-10-11 Solopower, Inc. Reaction methods to form group ibiiiavia thin film solar cell absorbers
JP2011155237A (ja) 2009-12-28 2011-08-11 Hitachi Ltd 化合物薄膜太陽電池、化合物薄膜太陽電池の製造方法、および化合物薄膜太陽電池モジュール
US8889469B2 (en) 2009-12-28 2014-11-18 Aeris Capital Sustainable Ip Ltd. Multi-nary group IB and VIA based semiconductor
US8088224B2 (en) 2010-01-15 2012-01-03 Solopower, Inc. Roll-to-roll evaporation system and method to manufacture group IBIIAVIA photovoltaics
US8859880B2 (en) * 2010-01-22 2014-10-14 Stion Corporation Method and structure for tiling industrial thin-film solar devices
JP2011176287A (ja) 2010-02-01 2011-09-08 Fujifilm Corp 光電変換素子、薄膜太陽電池および光電変換素子の製造方法
US9564320B2 (en) * 2010-06-18 2017-02-07 Soraa, Inc. Large area nitride crystal and method for making it
US20120006395A1 (en) 2010-07-08 2012-01-12 E. I. Du Pont De Nemours And Company Coated stainless steel substrate
EP2408023A1 (en) 2010-07-16 2012-01-18 Applied Materials, Inc. Thin-film Solar Fabrication Process, Deposition method for TCO layer, and Solar cell precursor layer stack
US20120064352A1 (en) 2010-09-14 2012-03-15 E. I. Du Pont De Nemours And Company Articles comprising a glass - flexible stainless steel composite layer
WO2012037242A2 (en) 2010-09-14 2012-03-22 E. I. Du Pont De Nemours And Company Glass-coated flexible substrates for photovoltaic cells
JP2013539912A (ja) * 2010-09-15 2013-10-28 プリカーサー エナジェティクス， インコーポレイテッド 光起電のための堆積過程およびデバイス
KR101075873B1 (ko) 2010-10-04 2011-10-25 한국에너지기술연구원 페이스트 또는 잉크를 이용한 구리인듐셀렌계 또는 구리인듐갈륨셀렌계 박막의 제조 방법
US20120214293A1 (en) 2011-02-22 2012-08-23 Serdar Aksu Electrodepositing doped cigs thin films for photovoltaic devices
US20130160831A1 (en) 2011-12-22 2013-06-27 Miasole Reactive Sputtering of ZnS(O,H) and InS(O,H) for Use as a Buffer Layer
US8900664B2 (en) * 2012-09-14 2014-12-02 Intermolecular, Inc. Method of fabricating high efficiency CIGS solar cells
EP2912695A4 (en) * 2012-10-26 2016-07-06 Res Triangle Inst INTERMEDIATE BELT SLEEVERS, HETERO TRANSITIONS AND OPTOELECTRONIC DEVICES WITH SOLUTION-PROCESSED QUANTUM POINTS AND RELATED METHODS
TWI654771B (zh) * 2012-12-21 2019-03-21 瑞士商弗里松股份有限公司 附加著鉀之薄膜光電裝置的製造
JP6103525B2 (ja) 2013-02-12 2017-03-29 日東電工株式会社 Ｃｉｇｓ膜およびそれを用いたｃｉｇｓ太陽電池
US8889466B2 (en) 2013-04-12 2014-11-18 International Business Machines Corporation Protective insulating layer and chemical mechanical polishing for polycrystalline thin film solar cells
KR102098100B1 (ko) 2013-09-17 2020-04-08 엘지이노텍 주식회사 태양전지 및 이의 제조 방법
TWI677105B (zh) 2014-05-23 2019-11-11 瑞士商弗里松股份有限公司 製造薄膜光電子裝置之方法及可藉由該方法獲得的薄膜光電子裝置
TWI661991B (zh) 2014-09-18 2019-06-11 瑞士商弗里松股份有限公司 用於製造薄膜裝置之自組裝圖案化
HUE053775T2 (hu) 2016-02-11 2021-07-28 Flisom Ag Önszervezõdõ mintázódás vékonyréteg eszközök gyártására
EP3414780B1 (en) 2016-02-11 2020-12-02 Flisom AG Fabricating thin-film optoelectronic devices with added rubidium and/or cesium

Also Published As

Publication number Publication date
EP3414780B1 (en) 2020-12-02
EP3414781A1 (en) 2018-12-19
US11257966B2 (en) 2022-02-22
HUE053005T2 (hu) 2021-06-28
US20200243699A1 (en) 2020-07-30
EP3414780A1 (en) 2018-12-19
US10658532B2 (en) 2020-05-19
WO2017137268A1 (en) 2017-08-17
US20190035953A1 (en) 2019-01-31
EP3414781B1 (en) 2020-12-09
WO2017137523A1 (en) 2017-08-17

Similar Documents

Publication Publication Date Title
HK1250481A1 (zh) 經過修飾的t細胞及其製備和使用方法
IL254071B1 (en) Mammalian cells are enriched in active mitochondria
IL248911A0 (en) Ready-to-print cells and integrated devices
HUE053179T2 (hu) Hozzáadott rubídiumot és/vagy céziumot tartalmazó napelem eszközök nagysebességû gyártása
SG11201608045TA (en) Solar cells with tunnel dielectrics
EP3365921A4 (en) SOLAR CELL WITH AN OXID NANOPARTICLE BUFFER LAYER AND METHOD OF PREPARING THEREOF
EP3093889C0 (en) SOLAR CELL AND METHOD FOR MANUFACTURING SAME
EP3327793C0 (en) SOLAR CELL AND ITS MANUFACTURING METHOD
HK1198452A1 (en) Framework of dust-prevention film assembly and dust-prevention film assembly using the framework
DK3204047T3 (da) Bløde kapsler med calcifediol
EP3149739A4 (en) Cross-coupled thyristor sram semiconductor structures and methods of fabrication
TWI563624B (en) Semiconductor device structure and method of fabricating the same
EP3149737A4 (en) Two-transistor sram semiconductor structure and methods of fabrication
EP3105797A4 (en) Solar cells and methods of fabrication thereof
SG11201608033RA (en) Solar cell with trench-free emitter regions
SG10201407629YA (en) Substrate with bump structure and manufacturing method thereof
GB201520069D0 (en) Thin film solar cell
GB201311862D0 (en) Optoelectronic devices, methods of fabrication thereof and materials therefor
TWI563628B (en) Semiconductor structure and method of fabricating the same
IL263971B (en) A matrix shell with bionic structures
HK1223426A1 (zh) 帶太陽能電池的電子鐘錶
IL248889B (en) Solar focusing tower with external receiver
PL3261743T3 (pl) Rotacyjno-symetryczny separator końcowy z korpusem podtrzymującym
SG10201503455UA (en) Interposer substrate and method of fabricating the same
DK3099371T3 (da) Ballon med dornbærerføringstråd