HRP20020100B1 - Method for producing an evaporation source - Google Patents
Method for producing an evaporation sourceInfo
- Publication number
- HRP20020100B1 HRP20020100B1 HR20020100A HRP20020100A HRP20020100B1 HR P20020100 B1 HRP20020100 B1 HR P20020100B1 HR 20020100 A HR20020100 A HR 20020100A HR P20020100 A HRP20020100 A HR P20020100A HR P20020100 B1 HRP20020100 B1 HR P20020100B1
- Authority
- HR
- Croatia
- Prior art keywords
- target
- components
- producing
- return plate
- density
- Prior art date
Links
- 230000008020 evaporation Effects 0.000 title 1
- 238000001704 evaporation Methods 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 239000000843 powder Substances 0.000 abstract 1
- 239000012254 powdered material Substances 0.000 abstract 1
- 238000000926 separation method Methods 0.000 abstract 1
- 230000009466 transformation Effects 0.000 abstract 1
- 230000008016 vaporization Effects 0.000 abstract 1
- 238000009834 vaporization Methods 0.000 abstract 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
- B22F7/08—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools with one or more parts not made from powder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
- H01J37/3491—Manufacturing of targets
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/12—Both compacting and sintering
- B22F3/14—Both compacting and sintering simultaneously
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2999/00—Aspects linked to processes or compositions used in powder metallurgy
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Composite Materials (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Powder Metallurgy (AREA)
- Laminated Bodies (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AT0085100U AT4240U1 (de) | 2000-11-20 | 2000-11-20 | Verfahren zur herstellung einer verdampfungsquelle |
PCT/AT2001/000349 WO2002040735A1 (de) | 2000-11-20 | 2001-11-07 | Verfahren zur herstellung einer verdampfungsquelle |
Publications (2)
Publication Number | Publication Date |
---|---|
HRP20020100A2 HRP20020100A2 (en) | 2003-12-31 |
HRP20020100B1 true HRP20020100B1 (en) | 2010-11-30 |
Family
ID=3501235
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HR20020100A HRP20020100B1 (en) | 2000-11-20 | 2002-02-01 | Method for producing an evaporation source |
Country Status (21)
Country | Link |
---|---|
US (1) | US6908588B2 (xx) |
EP (1) | EP1335995B1 (xx) |
JP (1) | JP4226900B2 (xx) |
KR (1) | KR100775140B1 (xx) |
CN (1) | CN1268780C (xx) |
AT (2) | AT4240U1 (xx) |
AU (1) | AU775031B2 (xx) |
BG (1) | BG64450B1 (xx) |
CA (1) | CA2375783C (xx) |
CZ (1) | CZ298911B6 (xx) |
DE (1) | DE50103914D1 (xx) |
DK (1) | DK1335995T3 (xx) |
ES (1) | ES2227293T3 (xx) |
HR (1) | HRP20020100B1 (xx) |
HU (1) | HU225577B1 (xx) |
MX (1) | MXPA02001478A (xx) |
MY (1) | MY128636A (xx) |
PL (1) | PL199272B1 (xx) |
RS (1) | RS49852B (xx) |
SI (1) | SI1335995T1 (xx) |
WO (1) | WO2002040735A1 (xx) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100441733C (zh) * | 2004-03-30 | 2008-12-10 | 株式会社延原表 | 蒸镀工序用喷嘴蒸发源 |
KR20070091274A (ko) * | 2004-11-18 | 2007-09-10 | 허니웰 인터내셔널 인코포레이티드 | 3차원 pvd 타겟의 형성 방법 |
DE102004060423B4 (de) * | 2004-12-14 | 2016-10-27 | Heraeus Deutschland GmbH & Co. KG | Rohrtarget und dessen Verwendung |
DE102006003279B4 (de) * | 2006-01-23 | 2010-03-25 | W.C. Heraeus Gmbh | Sputtertarget mit hochschmelzender Phase |
US20070251819A1 (en) * | 2006-05-01 | 2007-11-01 | Kardokus Janine K | Hollow cathode magnetron sputtering targets and methods of forming hollow cathode magnetron sputtering targets |
US8778987B2 (en) * | 2007-03-13 | 2014-07-15 | Symrise Ag | Use of 4-hydroxychalcone derivatives for masking an unpleasant taste |
US8702919B2 (en) * | 2007-08-13 | 2014-04-22 | Honeywell International Inc. | Target designs and related methods for coupled target assemblies, methods of production and uses thereof |
US20100140084A1 (en) * | 2008-12-09 | 2010-06-10 | Chi-Fung Lo | Method for production of aluminum containing targets |
AT12021U1 (de) * | 2010-04-14 | 2011-09-15 | Plansee Se | Beschichtungsquelle und verfahren zu deren herstellung |
CN103814151B (zh) | 2011-06-27 | 2016-01-20 | 梭莱有限公司 | Pvd靶材及其铸造方法 |
US9992917B2 (en) | 2014-03-10 | 2018-06-05 | Vulcan GMS | 3-D printing method for producing tungsten-based shielding parts |
KR20180135120A (ko) | 2014-06-27 | 2018-12-19 | 플란제 콤포지트 마테리얼스 게엠베하 | 스퍼터링 타겟 |
AT14497U1 (de) * | 2015-01-26 | 2015-12-15 | Plansee Composite Mat Gmbh | Beschichtungsquelle |
JP6728839B2 (ja) * | 2016-03-24 | 2020-07-22 | 大同特殊鋼株式会社 | プレス成形品の製造方法およびスパッタリングターゲット材 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63169307A (ja) * | 1987-01-06 | 1988-07-13 | Tokyo Tungsten Co Ltd | W又はW合金/Mo又はMo合金張り合わせ材料の製造方法 |
US5656216A (en) * | 1994-08-25 | 1997-08-12 | Sony Corporation | Method for making metal oxide sputtering targets (barrier powder envelope) |
US5863398A (en) * | 1996-10-11 | 1999-01-26 | Johnson Matthey Electonics, Inc. | Hot pressed and sintered sputtering target assemblies and method for making same |
US5963778A (en) * | 1997-02-13 | 1999-10-05 | Tosoh Smd, Inc. | Method for producing near net shape planar sputtering targets and an intermediate therefor |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4126451A (en) * | 1977-03-30 | 1978-11-21 | Airco, Inc. | Manufacture of plates by powder-metallurgy |
JPS60194070A (ja) | 1984-03-16 | 1985-10-02 | Tokuyama Soda Co Ltd | スパツタリングタ−ゲツト |
AT388752B (de) * | 1986-04-30 | 1989-08-25 | Plansee Metallwerk | Verfahren zur herstellung eines targets fuer die kathodenzerstaeubung |
JPH0196068A (ja) * | 1987-10-07 | 1989-04-14 | Nippon Chemicon Corp | 窒化アルミニウム焼結体の製造方法 |
JPH0741304B2 (ja) * | 1990-03-13 | 1995-05-10 | 株式会社神戸製鋼所 | 高A1含有Ti合金の熱間押出方法 |
US5342571A (en) * | 1992-02-19 | 1994-08-30 | Tosoh Smd, Inc. | Method for producing sputtering target for deposition of titanium, aluminum and nitrogen coatings, sputtering target made thereby, and method of sputtering with said targets |
JPH06128738A (ja) * | 1992-10-20 | 1994-05-10 | Mitsubishi Kasei Corp | スパッタリングターゲットの製造方法 |
US5397050A (en) * | 1993-10-27 | 1995-03-14 | Tosoh Smd, Inc. | Method of bonding tungsten titanium sputter targets to titanium plates and target assemblies produced thereby |
US6073830A (en) * | 1995-04-21 | 2000-06-13 | Praxair S.T. Technology, Inc. | Sputter target/backing plate assembly and method of making same |
US5836506A (en) * | 1995-04-21 | 1998-11-17 | Sony Corporation | Sputter target/backing plate assembly and method of making same |
FR2756572B1 (fr) | 1996-12-04 | 1999-01-08 | Pechiney Aluminium | Alliages d'aluminium a temperature de recristallisation elevee utilisee dans les cibles de pulverisation cathodiques |
JP3946298B2 (ja) * | 1997-03-25 | 2007-07-18 | 本田技研工業株式会社 | セラミックス−金属傾斜機能材およびその製造方法 |
US6010583A (en) | 1997-09-09 | 2000-01-04 | Sony Corporation | Method of making unreacted metal/aluminum sputter target |
JPH11106904A (ja) * | 1997-09-29 | 1999-04-20 | Riyouka Massey Kk | スパッタリングターゲットの製造方法 |
US6579431B1 (en) * | 1998-01-14 | 2003-06-17 | Tosoh Smd, Inc. | Diffusion bonding of high purity metals and metal alloys to aluminum backing plates using nickel or nickel alloy interlayers |
JPH11200030A (ja) | 1998-01-20 | 1999-07-27 | Sumitomo Chem Co Ltd | スパッタリングターゲット用バッキングプレート |
US6183686B1 (en) * | 1998-08-04 | 2001-02-06 | Tosoh Smd, Inc. | Sputter target assembly having a metal-matrix-composite backing plate and methods of making same |
US6328927B1 (en) * | 1998-12-24 | 2001-12-11 | Praxair Technology, Inc. | Method of making high-density, high-purity tungsten sputter targets |
JP2000273623A (ja) * | 1999-03-29 | 2000-10-03 | Japan Energy Corp | Ti−Al合金スパッタリングターゲット |
US6042777A (en) * | 1999-08-03 | 2000-03-28 | Sony Corporation | Manufacturing of high density intermetallic sputter targets |
-
2000
- 2000-11-20 AT AT0085100U patent/AT4240U1/de not_active IP Right Cessation
-
2001
- 2001-11-06 MY MYPI20015103A patent/MY128636A/en unknown
- 2001-11-07 RS YUP-445/02A patent/RS49852B/sr unknown
- 2001-11-07 WO PCT/AT2001/000349 patent/WO2002040735A1/de active IP Right Grant
- 2001-11-07 AT AT01980044T patent/ATE278050T1/de active
- 2001-11-07 PL PL355115A patent/PL199272B1/pl unknown
- 2001-11-07 AU AU11982/02A patent/AU775031B2/en not_active Ceased
- 2001-11-07 CN CNB018030033A patent/CN1268780C/zh not_active Expired - Lifetime
- 2001-11-07 KR KR1020027004639A patent/KR100775140B1/ko active IP Right Grant
- 2001-11-07 DK DK01980044T patent/DK1335995T3/da active
- 2001-11-07 EP EP01980044A patent/EP1335995B1/de not_active Expired - Lifetime
- 2001-11-07 SI SI200130263T patent/SI1335995T1/xx unknown
- 2001-11-07 HU HU0301848A patent/HU225577B1/hu not_active IP Right Cessation
- 2001-11-07 CZ CZ20020669A patent/CZ298911B6/cs not_active IP Right Cessation
- 2001-11-07 MX MXPA02001478A patent/MXPA02001478A/es active IP Right Grant
- 2001-11-07 DE DE50103914T patent/DE50103914D1/de not_active Expired - Lifetime
- 2001-11-07 CA CA002375783A patent/CA2375783C/en not_active Expired - Fee Related
- 2001-11-07 ES ES01980044T patent/ES2227293T3/es not_active Expired - Lifetime
- 2001-11-07 JP JP2002543043A patent/JP4226900B2/ja not_active Expired - Lifetime
-
2002
- 2002-01-31 BG BG106371A patent/BG64450B1/bg unknown
- 2002-02-01 HR HR20020100A patent/HRP20020100B1/xx not_active IP Right Cessation
- 2002-06-12 US US10/167,787 patent/US6908588B2/en not_active Expired - Lifetime
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63169307A (ja) * | 1987-01-06 | 1988-07-13 | Tokyo Tungsten Co Ltd | W又はW合金/Mo又はMo合金張り合わせ材料の製造方法 |
US5656216A (en) * | 1994-08-25 | 1997-08-12 | Sony Corporation | Method for making metal oxide sputtering targets (barrier powder envelope) |
US5863398A (en) * | 1996-10-11 | 1999-01-26 | Johnson Matthey Electonics, Inc. | Hot pressed and sintered sputtering target assemblies and method for making same |
US5963778A (en) * | 1997-02-13 | 1999-10-05 | Tosoh Smd, Inc. | Method for producing near net shape planar sputtering targets and an intermediate therefor |
Also Published As
Publication number | Publication date |
---|---|
US20020155016A1 (en) | 2002-10-24 |
KR100775140B1 (ko) | 2007-11-12 |
MY128636A (en) | 2007-02-28 |
JP2004513244A (ja) | 2004-04-30 |
HU225577B1 (en) | 2007-03-28 |
CZ298911B6 (cs) | 2008-03-12 |
ES2227293T3 (es) | 2005-04-01 |
CZ2002669A3 (cs) | 2002-08-14 |
CN1268780C (zh) | 2006-08-09 |
PL199272B1 (pl) | 2008-09-30 |
AU1198202A (en) | 2002-05-27 |
KR20020074145A (ko) | 2002-09-28 |
EP1335995A1 (de) | 2003-08-20 |
US6908588B2 (en) | 2005-06-21 |
YU44502A (sh) | 2005-03-15 |
RS49852B (sr) | 2008-08-07 |
ATE278050T1 (de) | 2004-10-15 |
HRP20020100A2 (en) | 2003-12-31 |
EP1335995B1 (de) | 2004-09-29 |
WO2002040735A1 (de) | 2002-05-23 |
AT4240U1 (de) | 2001-04-25 |
AU775031B2 (en) | 2004-07-15 |
HUP0301848A2 (en) | 2003-09-29 |
BG64450B1 (en) | 2005-02-28 |
CN1392904A (zh) | 2003-01-22 |
DK1335995T3 (da) | 2005-01-31 |
DE50103914D1 (de) | 2004-11-04 |
MXPA02001478A (es) | 2002-09-23 |
PL355115A1 (en) | 2004-04-05 |
JP4226900B2 (ja) | 2009-02-18 |
CA2375783A1 (en) | 2002-05-20 |
CA2375783C (en) | 2007-05-08 |
SI1335995T1 (en) | 2005-06-30 |
BG106371A (en) | 2002-08-30 |
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Legal Events
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A1OB | Publication of a patent application | ||
ARAI | Request for the grant of a patent on the basis of the submitted results of a substantive examination of a patent application | ||
PNAN | Change of the applicant name, address/residence |
Owner name: PLANSEE SE, AT |
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B1PR | Patent granted | ||
ODRP | Renewal fee for the maintenance of a patent |
Payment date: 20121024 Year of fee payment: 12 |
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PBON | Lapse due to non-payment of renewal fee |
Effective date: 20131107 |