HK40290A - Semiconductor integrated circuit device with power consumption reducing arrangement - Google Patents
Semiconductor integrated circuit device with power consumption reducing arrangementInfo
- Publication number
- HK40290A HK40290A HK402/90A HK40290A HK40290A HK 40290 A HK40290 A HK 40290A HK 402/90 A HK402/90 A HK 402/90A HK 40290 A HK40290 A HK 40290A HK 40290 A HK40290 A HK 40290A
- Authority
- HK
- Hong Kong
- Prior art keywords
- integrated circuit
- power consumption
- semiconductor integrated
- circuit device
- consumption reducing
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
- G11C7/1057—Data output buffers, e.g. comprising level conversion circuits, circuits for adapting load
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/94—Metal-insulator-semiconductors, e.g. MOS
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58243807A JPS60136084A (ja) | 1983-12-26 | 1983-12-26 | 半導体集積回路装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
HK40290A true HK40290A (en) | 1990-06-01 |
Family
ID=17109225
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK402/90A HK40290A (en) | 1983-12-26 | 1990-05-24 | Semiconductor integrated circuit device with power consumption reducing arrangement |
Country Status (6)
Country | Link |
---|---|
US (1) | US5111432A (ja) |
JP (1) | JPS60136084A (ja) |
KR (1) | KR930008575B1 (ja) |
DE (1) | DE3447723A1 (ja) |
GB (1) | GB2154086B (ja) |
HK (1) | HK40290A (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5265060A (en) * | 1983-12-26 | 1993-11-23 | Hitachi, Ltd. | Semiconductor integrated circuit device with power consumption reducing arrangement |
JPH0795395B2 (ja) * | 1984-02-13 | 1995-10-11 | 株式会社日立製作所 | 半導体集積回路 |
JPS613390A (ja) * | 1984-06-15 | 1986-01-09 | Hitachi Ltd | 記憶装置 |
JP2598412B2 (ja) * | 1987-07-10 | 1997-04-09 | 株式会社日立製作所 | 半導体記憶装置 |
JPH0817036B2 (ja) * | 1988-10-06 | 1996-02-21 | 日本電気株式会社 | 半導体メモリ回路 |
US5281873A (en) * | 1989-11-21 | 1994-01-25 | Fujitsu Limited | Sense amplifier control circuit |
KR920701979A (ko) * | 1989-11-21 | 1992-08-12 | 세끼자와 다다시 | 센스 앰프 제어회로 |
JP2646850B2 (ja) * | 1990-11-30 | 1997-08-27 | 日本電気株式会社 | 半導体メモリ回路 |
KR930017033A (ko) * | 1992-01-17 | 1993-08-30 | 가나이 스토무 | 반도체 기억장치 |
WO1993018412A1 (en) * | 1992-03-13 | 1993-09-16 | Silicon Storage Technology, Inc. | A sensing circuit for a floating gate memory device |
US5594697A (en) * | 1994-06-28 | 1997-01-14 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device |
TW324101B (en) * | 1995-12-21 | 1998-01-01 | Hitachi Ltd | Semiconductor integrated circuit and its working method |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1600222A (ja) * | 1968-12-31 | 1970-07-20 | ||
GB1252362A (ja) * | 1969-03-11 | 1971-11-03 | ||
US3601628A (en) * | 1969-06-25 | 1971-08-24 | Texas Instruments Inc | Precharge mos-bipolar output buffer |
US3601630A (en) * | 1969-06-26 | 1971-08-24 | Texas Instruments Inc | Mos circuit with bipolar emitter-follower output |
JPS4979793A (ja) * | 1972-12-08 | 1974-08-01 | ||
US3870901A (en) * | 1973-12-10 | 1975-03-11 | Gen Instrument Corp | Method and apparatus for maintaining the charge on a storage node of a mos circuit |
US4090254A (en) * | 1976-03-01 | 1978-05-16 | International Business Machines Corporation | Charge injector transistor memory |
US4096584A (en) * | 1977-01-31 | 1978-06-20 | Intel Corporation | Low power/high speed static ram |
JPS5570993A (en) * | 1978-11-24 | 1980-05-28 | Hitachi Ltd | Memory circuit |
JPS5596158A (en) * | 1979-01-16 | 1980-07-22 | Olympus Optical Co | Medicating tube |
JPS5658193A (en) * | 1979-10-16 | 1981-05-21 | Nec Corp | Semiconductor memory device |
JPS6028076B2 (ja) * | 1980-12-25 | 1985-07-02 | 富士通株式会社 | 半導体メモリの書込み回路 |
JPS57198594A (en) * | 1981-06-01 | 1982-12-06 | Hitachi Ltd | Semiconductor storage device |
JPS57208690A (en) * | 1981-06-19 | 1982-12-21 | Hitachi Ltd | Semiconductor storage device |
JPS5826392A (ja) * | 1981-08-11 | 1983-02-16 | Toshiba Corp | Mosメモリ用センス回路 |
JPS58209212A (ja) * | 1982-05-31 | 1983-12-06 | Hitachi Ltd | トランジスタ回路 |
JPH0648595B2 (ja) * | 1982-08-20 | 1994-06-22 | 株式会社東芝 | 半導体記憶装置のセンスアンプ |
JPS5956292A (ja) * | 1982-09-24 | 1984-03-31 | Hitachi Ltd | 半導体記憶装置 |
JPS5968889A (ja) * | 1982-10-08 | 1984-04-18 | Toshiba Corp | 半導体記憶装置 |
JPS59203296A (ja) * | 1983-04-30 | 1984-11-17 | Toshiba Corp | 半導体記憶装置 |
US4604533A (en) * | 1982-12-28 | 1986-08-05 | Tokyo Shibaura Denki Kabushiki Kaisha | Sense amplifier |
-
1983
- 1983-12-26 JP JP58243807A patent/JPS60136084A/ja active Granted
-
1984
- 1984-12-18 GB GB08431943A patent/GB2154086B/en not_active Expired
- 1984-12-18 KR KR1019840008079A patent/KR930008575B1/ko not_active IP Right Cessation
- 1984-12-21 DE DE19843447723 patent/DE3447723A1/de not_active Ceased
-
1990
- 1990-03-12 US US07/492,329 patent/US5111432A/en not_active Expired - Lifetime
- 1990-05-24 HK HK402/90A patent/HK40290A/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
GB2154086B (en) | 1988-09-21 |
JPS60136084A (ja) | 1985-07-19 |
JPH0586000B2 (ja) | 1993-12-09 |
GB2154086A (en) | 1985-08-29 |
KR850005171A (ko) | 1985-08-21 |
US5111432A (en) | 1992-05-05 |
KR930008575B1 (ko) | 1993-09-09 |
DE3447723A1 (de) | 1985-07-04 |
GB8431943D0 (en) | 1985-01-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PC | Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee) |