HK35885A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- HK35885A HK35885A HK358/85A HK35885A HK35885A HK 35885 A HK35885 A HK 35885A HK 358/85 A HK358/85 A HK 358/85A HK 35885 A HK35885 A HK 35885A HK 35885 A HK35885 A HK 35885A
- Authority
- HK
- Hong Kong
- Prior art keywords
- semiconductor device
- semiconductor element
- package
- shield
- alpha
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 239000000919 ceramic Substances 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
- H01L23/556—Protection against radiation, e.g. light or electromagnetic waves against alpha rays
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
- H01L23/057—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads being parallel to the base
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
- H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
- H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H01L24/42—Wire connectors; Manufacturing methods related thereto
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- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
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- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
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- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
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- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
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- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- H01L2924/151—Die mounting substrate
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- H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
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- H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
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- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
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- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Manufacturing & Machinery (AREA)
- High Energy & Nuclear Physics (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Dispersion Chemistry (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Light Receiving Elements (AREA)
- Formation Of Insulating Films (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15983178A JPS5588356A (en) | 1978-12-27 | 1978-12-27 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
HK35885A true HK35885A (en) | 1985-05-17 |
Family
ID=15702194
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK358/85A HK35885A (en) | 1978-12-27 | 1985-05-09 | Semiconductor device |
Country Status (7)
Country | Link |
---|---|
US (1) | US4541003A (xx) |
JP (1) | JPS5588356A (xx) |
DE (1) | DE2951762A1 (xx) |
GB (1) | GB2039145B (xx) |
HK (1) | HK35885A (xx) |
MY (1) | MY8500665A (xx) |
SG (1) | SG41284G (xx) |
Families Citing this family (160)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5599153U (xx) * | 1978-12-28 | 1980-07-10 | ||
JPS5591145A (en) * | 1978-12-28 | 1980-07-10 | Narumi China Corp | Production of ceramic package |
JPS5598852A (en) * | 1979-01-23 | 1980-07-28 | Nec Corp | Memory device |
JPS55117851U (xx) * | 1979-02-14 | 1980-08-20 | ||
JPS55113347A (en) * | 1979-02-21 | 1980-09-01 | Fujitsu Ltd | Semiconductor device |
JPS55123149A (en) * | 1979-03-15 | 1980-09-22 | Fujitsu Ltd | Semiconductor device |
JPS5923469B2 (ja) * | 1979-03-26 | 1984-06-02 | 富士通株式会社 | 半導体装置 |
JPS55163850A (en) * | 1979-06-08 | 1980-12-20 | Fujitsu Ltd | Semiconductor device |
JPS55166943A (en) * | 1979-06-15 | 1980-12-26 | Fujitsu Ltd | Semiconductor device |
JPS5845186B2 (ja) * | 1979-08-07 | 1983-10-07 | 富士通株式会社 | 半導体装置 |
JPS5630745A (en) * | 1979-08-22 | 1981-03-27 | Fujitsu Ltd | Semiconductor device |
JPS5636136A (en) * | 1979-08-31 | 1981-04-09 | Fujitsu Ltd | Semiconductor device |
DE3065954D1 (en) * | 1979-11-02 | 1984-01-26 | Burroughs Corp | Integrated circuit with alpha radiation shielding means |
JPS6015152B2 (ja) * | 1980-01-09 | 1985-04-17 | 株式会社日立製作所 | 樹脂封止半導体メモリ装置 |
JPS5718585U (xx) * | 1980-07-04 | 1982-01-30 | ||
JPS5718339A (en) * | 1980-07-09 | 1982-01-30 | Fujitsu Ltd | Semiconductor device |
DE3027175A1 (de) * | 1980-07-17 | 1982-02-11 | Siemens AG, 1000 Berlin und 8000 München | Anordnung zur verringerung der strahlungsempfindlichkeit von in integrierter mos-schaltkreistechnik ausgefuehrten speicherzellen |
JPS5724554A (en) * | 1980-07-22 | 1982-02-09 | Nec Corp | Semiconductor device |
DE3118130A1 (de) * | 1981-05-07 | 1982-12-02 | Siemens AG, 1000 Berlin und 8000 München | Elektrisch isolierende einkapselungsmasse fuer halbleiteranordnungen |
US4975762A (en) * | 1981-06-11 | 1990-12-04 | General Electric Ceramics, Inc. | Alpha-particle-emitting ceramic composite cover |
JPS584954A (ja) * | 1981-06-30 | 1983-01-12 | Hitachi Ltd | 樹脂封止型半導体メモリー装置 |
US4423548A (en) * | 1981-07-06 | 1984-01-03 | Motorola, Inc. | Method for protecting a semiconductor device from radiation indirect failures |
DE3127391A1 (de) * | 1981-07-10 | 1983-01-27 | Siemens AG, 1000 Berlin und 8000 München | Schutzanordnung fuer halbleiteranordnungen |
JPS5875859A (ja) * | 1981-10-30 | 1983-05-07 | Fujitsu Ltd | 半導体装置 |
JPS58101442A (ja) * | 1981-12-11 | 1983-06-16 | Hitachi Ltd | 電気的装置用基板 |
EP0098417A3 (en) * | 1982-06-15 | 1986-12-30 | Kabushiki Kaisha Toshiba | Semiconductor memory device |
US4594770A (en) * | 1982-07-15 | 1986-06-17 | Olin Corporation | Method of making semiconductor casing |
JPS5966157A (ja) * | 1982-10-08 | 1984-04-14 | Fujitsu Ltd | 半導体装置及びその製造方法 |
JPS5987840A (ja) * | 1982-11-10 | 1984-05-21 | Toray Silicone Co Ltd | 半導体装置 |
JPS6012744A (ja) * | 1983-07-01 | 1985-01-23 | Hitachi Ltd | 半導体装置 |
US5237204A (en) * | 1984-05-25 | 1993-08-17 | Compagnie D'informatique Militaire Spatiale Et Aeronautique | Electric potential distribution device and an electronic component case incorporating such a device |
CA1238119A (en) * | 1985-04-18 | 1988-06-14 | Douglas W. Phelps, Jr. | Packaged semiconductor chip |
JPS61248302A (ja) * | 1985-04-25 | 1986-11-05 | 株式会社日立製作所 | 炭化ケイ素焼結体用メタライズペ−スト |
US4949224A (en) * | 1985-09-20 | 1990-08-14 | Sharp Kabushiki Kaisha | Structure for mounting a semiconductor device |
US4943844A (en) * | 1985-11-22 | 1990-07-24 | Texas Instruments Incorporated | High-density package |
JPS62281358A (ja) * | 1986-05-29 | 1987-12-07 | Nec Kyushu Ltd | 半導体装置 |
US4814943A (en) * | 1986-06-04 | 1989-03-21 | Oki Electric Industry Co., Ltd. | Printed circuit devices using thermoplastic resin cover plate |
US4864539A (en) * | 1987-01-15 | 1989-09-05 | International Business Machines Corporation | Radiation hardened bipolar static RAM cell |
US4862322A (en) * | 1988-05-02 | 1989-08-29 | Bickford Harry R | Double electronic device structure having beam leads solderlessly bonded between contact locations on each device and projecting outwardly from therebetween |
US5041396A (en) * | 1989-07-18 | 1991-08-20 | Vlsi Technology, Inc. | Reusable package for holding a semiconductor chip and method for reusing the package |
US5075759A (en) * | 1989-07-21 | 1991-12-24 | Motorola, Inc. | Surface mounting semiconductor device and method |
FR2650121B1 (fr) * | 1989-07-21 | 1997-07-25 | Nec Corp | Support de puce electronique |
US5264726A (en) * | 1989-07-21 | 1993-11-23 | Nec Corporation | Chip-carrier |
JP2816239B2 (ja) * | 1990-06-15 | 1998-10-27 | 株式会社日立製作所 | 樹脂封止型半導体装置 |
US5296737A (en) * | 1990-09-06 | 1994-03-22 | Hitachi, Ltd. | Semiconductor device with a plurality of face to face chips |
US5173764A (en) * | 1991-04-08 | 1992-12-22 | Motorola, Inc. | Semiconductor device having a particular lid means and encapsulant to reduce die stress |
JP2755360B2 (ja) * | 1991-12-17 | 1998-05-20 | インターナショナル・ビジネス・マシーンズ・コーポレイション | アルファ粒子遮蔽機能を有する半導体モジュール |
JPH0685161A (ja) * | 1992-09-07 | 1994-03-25 | Hitachi Ltd | 高密度実装型半導体装置 |
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JPS5552251A (en) * | 1978-10-11 | 1980-04-16 | Nec Corp | Semiconductor integrated circuit device |
JPS5552245A (en) * | 1978-10-11 | 1980-04-16 | Nec Corp | Semiconductor integrated circuit device |
JPS5552246A (en) * | 1978-10-13 | 1980-04-16 | Mitsubishi Electric Corp | Semiconductor device |
-
1978
- 1978-12-27 JP JP15983178A patent/JPS5588356A/ja active Pending
-
1979
- 1979-12-20 GB GB7943961A patent/GB2039145B/en not_active Expired
- 1979-12-21 DE DE19792951762 patent/DE2951762A1/de not_active Withdrawn
-
1982
- 1982-06-14 US US06/388,216 patent/US4541003A/en not_active Expired - Fee Related
-
1984
- 1984-06-04 SG SG412/84A patent/SG41284G/en unknown
-
1985
- 1985-05-09 HK HK358/85A patent/HK35885A/xx unknown
- 1985-12-30 MY MY665/85A patent/MY8500665A/xx unknown
Also Published As
Publication number | Publication date |
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MY8500665A (en) | 1985-12-31 |
US4541003A (en) | 1985-09-10 |
DE2951762A1 (de) | 1980-07-10 |
GB2039145B (en) | 1983-04-13 |
GB2039145A (en) | 1980-07-30 |
SG41284G (en) | 1985-02-08 |
JPS5588356A (en) | 1980-07-04 |
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