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JPS5552245A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS5552245A
JPS5552245A JP12555778A JP12555778A JPS5552245A JP S5552245 A JPS5552245 A JP S5552245A JP 12555778 A JP12555778 A JP 12555778A JP 12555778 A JP12555778 A JP 12555778A JP S5552245 A JPS5552245 A JP S5552245A
Authority
JP
JAPAN
Prior art keywords
high purity
alpha particles
package
layer
purity silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12555778A
Inventor
Takeo Fujii
Taiichi Inoue
Original Assignee
Nec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corp filed Critical Nec Corp
Priority to JP12555778A priority Critical patent/JPS5552245A/en
Publication of JPS5552245A publication Critical patent/JPS5552245A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE: To provide a semiconductor integrated circuit memory device having a high reliability and free of malfunctions that might take place due to the presence of alpha particles by covering at least part of the inside wall of a package with a metallic material of high purity, or impurities not exceeding 0.001ppm.
CONSTITUTION: A layer of high purity silicon 36,200μm thick is attached to part of the inside wall of an alumina cap 32 of a package. Most of the alpha particles released from the cap 32 which contain a plenty of impurities are absorbed by the high purity silicon layer 36, so that the probability that the alpha particles will reach MOS memory pellets 35 is quite little. Any alpha particles reaching the MOS memory rellets 35 must have consumed most of their energy on the way. Thus a memory device with the least probavbility of malfunctioning can be obtained. The high purity silicon layer 36 may be substituted by germanium or the like metal, and such layer may cover the inside walls of the package in their entirety in order to obtain more effective results.
COPYRIGHT: (C)1980,JPO&Japio
JP12555778A 1978-10-11 1978-10-11 Semiconductor integrated circuit device Pending JPS5552245A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12555778A JPS5552245A (en) 1978-10-11 1978-10-11 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12555778A JPS5552245A (en) 1978-10-11 1978-10-11 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS5552245A true JPS5552245A (en) 1980-04-16

Family

ID=14913137

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12555778A Pending JPS5552245A (en) 1978-10-11 1978-10-11 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS5552245A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5588356A (en) * 1978-12-27 1980-07-04 Hitachi Ltd Semiconductor device
JPS5817642A (en) * 1981-07-10 1983-02-01 Siemens Ag Protecting device for semiconductor device
US4975762A (en) * 1981-06-11 1990-12-04 General Electric Ceramics, Inc. Alpha-particle-emitting ceramic composite cover

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5588356A (en) * 1978-12-27 1980-07-04 Hitachi Ltd Semiconductor device
US4975762A (en) * 1981-06-11 1990-12-04 General Electric Ceramics, Inc. Alpha-particle-emitting ceramic composite cover
JPS5817642A (en) * 1981-07-10 1983-02-01 Siemens Ag Protecting device for semiconductor device

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