JPS554990A - Composite integrated circuit device - Google Patents

Composite integrated circuit device

Info

Publication number
JPS554990A
JPS554990A JP7840978A JP7840978A JPS554990A JP S554990 A JPS554990 A JP S554990A JP 7840978 A JP7840978 A JP 7840978A JP 7840978 A JP7840978 A JP 7840978A JP S554990 A JPS554990 A JP S554990A
Authority
JP
Japan
Prior art keywords
resin
case
integrated circuit
composite integrated
circuit device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7840978A
Other languages
Japanese (ja)
Inventor
Toshio Hiroe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP7840978A priority Critical patent/JPS554990A/en
Publication of JPS554990A publication Critical patent/JPS554990A/en
Pending legal-status Critical Current

Links

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PURPOSE: To protect transistors, etc. from stress and vibration caused by temperature change, by fixing a base plate, on which transistors and diodes, at the bottom of a case, and covering it with soft resin, and further filling the top of this with resin whose coefficient of expansion is close to that of the case.
CONSTITUTION: Circuit base plate 11, on which discrete component 12, pellet component 12, lead terminal 14, etc. are mounted, is fixed to the bottom of case 15. The top of this is covered with resin 16. Further, the top of this is filled with resin 17, whose coefficient of expansion is nearly the same as that of the case, and thereby a composite integrated circuit is formed. By this, resin 17 can absorbe stress and vibration caused by temperature change so that the device is protected from cracking and stripping and from humidity.
COPYRIGHT: (C)1980,JPO&Japio
JP7840978A 1978-06-27 1978-06-27 Composite integrated circuit device Pending JPS554990A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7840978A JPS554990A (en) 1978-06-27 1978-06-27 Composite integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7840978A JPS554990A (en) 1978-06-27 1978-06-27 Composite integrated circuit device

Publications (1)

Publication Number Publication Date
JPS554990A true JPS554990A (en) 1980-01-14

Family

ID=13661231

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7840978A Pending JPS554990A (en) 1978-06-27 1978-06-27 Composite integrated circuit device

Country Status (1)

Country Link
JP (1) JPS554990A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6072122A (en) * 1995-05-31 2000-06-06 Nec Corporation Multi-chip packaging structure having chips sealably mounted on opposing surfaces of substrates
JP6567241B1 (en) * 2018-06-12 2019-08-28 三菱電機株式会社 Power semiconductor module and power conversion device
WO2019239615A1 (en) * 2018-06-12 2019-12-19 三菱電機株式会社 Power semiconductor module and power conversion device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6072122A (en) * 1995-05-31 2000-06-06 Nec Corporation Multi-chip packaging structure having chips sealably mounted on opposing surfaces of substrates
JP6567241B1 (en) * 2018-06-12 2019-08-28 三菱電機株式会社 Power semiconductor module and power conversion device
WO2019239615A1 (en) * 2018-06-12 2019-12-19 三菱電機株式会社 Power semiconductor module and power conversion device

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