JPS56158432A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56158432A
JPS56158432A JP6430780A JP6430780A JPS56158432A JP S56158432 A JPS56158432 A JP S56158432A JP 6430780 A JP6430780 A JP 6430780A JP 6430780 A JP6430780 A JP 6430780A JP S56158432 A JPS56158432 A JP S56158432A
Authority
JP
Japan
Prior art keywords
tantalum
film
atomic weight
oxide film
alpha
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6430780A
Other languages
Japanese (ja)
Inventor
Haruhiko Abe
Hiroji Harada
Natsuo Tsubouchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP6430780A priority Critical patent/JPS56158432A/en
Publication of JPS56158432A publication Critical patent/JPS56158432A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To prevent an erroneous operation caused by an alpha-ray by providing a tantalum oxide film or a tungsten oxide film through Si3N4 or directly on a circuit element and a wiring layer on the semiconductor substrate. CONSTITUTION:In the MOSLSI memory, further a tantalum oxid film 10 is formed on the whole surface of the Si3N4 film 9. Because the shielding capacity of the radioactive rays such as an alpha-ray is the higher the atomic weight is larger and the atomic weight of tantalum is large by that much, the film 10 of about 1mum has the capacity larger than a polyamide resin of about 30mum. As tantalum oxide is an insulator, it can be directly laminated. As tungsten has the approximate atomic weight to that of tantalum, the tungsten oxide film is equally effective for the same purpose.
JP6430780A 1980-05-12 1980-05-12 Semiconductor device Pending JPS56158432A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6430780A JPS56158432A (en) 1980-05-12 1980-05-12 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6430780A JPS56158432A (en) 1980-05-12 1980-05-12 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS56158432A true JPS56158432A (en) 1981-12-07

Family

ID=13254448

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6430780A Pending JPS56158432A (en) 1980-05-12 1980-05-12 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56158432A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62259448A (en) * 1986-04-14 1987-11-11 Nippon Telegr & Teleph Corp <Ntt> Formation of insulating film
US6714387B1 (en) * 2001-01-08 2004-03-30 Headway Technologies, Inc. Spin valve head with reduced element gap

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62259448A (en) * 1986-04-14 1987-11-11 Nippon Telegr & Teleph Corp <Ntt> Formation of insulating film
US6714387B1 (en) * 2001-01-08 2004-03-30 Headway Technologies, Inc. Spin valve head with reduced element gap

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