HK1205592A1 - A semiconductor device and an electronic device - Google Patents
A semiconductor device and an electronic deviceInfo
- Publication number
- HK1205592A1 HK1205592A1 HK15105949.4A HK15105949A HK1205592A1 HK 1205592 A1 HK1205592 A1 HK 1205592A1 HK 15105949 A HK15105949 A HK 15105949A HK 1205592 A1 HK1205592 A1 HK 1205592A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- electronic device
- semiconductor device
- semiconductor
- electronic
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
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- H—ELECTRICITY
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- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49562—Geometry of the lead-frame for devices being provided for in H01L29/00
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- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12036—PN diode
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Geometry (AREA)
- Manufacturing & Machinery (AREA)
- Inverter Devices (AREA)
- Lead Frames For Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2013125288A JP6130238B2 (ja) | 2013-06-14 | 2013-06-14 | 半導体装置および電子装置 |
Publications (1)
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HK1205592A1 true HK1205592A1 (en) | 2015-12-18 |
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HK15105949.4A HK1205592A1 (en) | 2013-06-14 | 2015-06-23 | A semiconductor device and an electronic device |
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US (3) | US9704979B2 (xx) |
EP (1) | EP2814058B1 (xx) |
JP (1) | JP6130238B2 (xx) |
KR (1) | KR20140145994A (xx) |
CN (2) | CN110299341B (xx) |
HK (1) | HK1205592A1 (xx) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
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JP6354392B2 (ja) * | 2014-07-03 | 2018-07-11 | 株式会社デンソー | 半導体装置 |
JP6318064B2 (ja) | 2014-09-25 | 2018-04-25 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
CN108028242B (zh) * | 2015-09-30 | 2021-08-17 | 敏捷电源开关三维集成Apsi3D | 包括附加迹线的半导体功率器件及制造半导体功率器件的方法 |
JP6580015B2 (ja) | 2016-10-05 | 2019-09-25 | 三菱電機株式会社 | モールド樹脂封止型パワー半導体装置 |
US10872846B2 (en) | 2017-06-22 | 2020-12-22 | Renesas Electronics America Inc. | Solid top terminal for discrete power devices |
US10204844B1 (en) * | 2017-11-16 | 2019-02-12 | Semiconductor Components Industries, Llc | Clip for semiconductor package |
JP6743802B2 (ja) * | 2017-11-22 | 2020-08-19 | Tdk株式会社 | 半導体装置 |
EP3489994B1 (en) * | 2017-11-28 | 2020-08-26 | Mitsubishi Electric R & D Centre Europe B.V. | Device and a method and a system for allowing the restoration of an interconnection of a die of a power module |
JP7067205B2 (ja) * | 2018-04-02 | 2022-05-16 | 富士電機株式会社 | 半導体装置 |
TWI671877B (zh) * | 2018-04-24 | 2019-09-11 | 財團法人工業技術研究院 | 半導體封裝結構 |
US11735506B2 (en) * | 2018-05-15 | 2023-08-22 | Texas Instruments Incorporated | Packages with multiple exposed pads |
JP7155990B2 (ja) * | 2018-12-17 | 2022-10-19 | 株式会社デンソー | 半導体モジュール |
US11073572B2 (en) * | 2019-01-17 | 2021-07-27 | Infineon Technologies Ag | Current sensor device with a routable molded lead frame |
US20200235067A1 (en) * | 2019-01-22 | 2020-07-23 | Texas Instruments Incorporated | Electronic device flip chip package with exposed clip |
US11069640B2 (en) * | 2019-06-14 | 2021-07-20 | Cree Fayetteville, Inc. | Package for power electronics |
DE112021002767T5 (de) * | 2020-05-14 | 2023-03-02 | Sony Semiconductor Solutions Corporation | Halbleitereinrichtung, temperaturkompensationssystem und alarmsystem |
US11373941B2 (en) * | 2020-10-12 | 2022-06-28 | Renesas Electronics Corporation | Sense MOSFET electrically connected to a source pad via a plurality of source extraction ports |
DE102022207269A1 (de) | 2022-07-18 | 2024-01-18 | Zf Friedrichshafen Ag | Verfahren und Vorrichtung zum Herstellen einer Anschlussvorrichtung zum Anschließen zumindest eines elektrischen oder elektronischen Bauteils für ein elektrisches oder elektronisches Modul |
CN115101423A (zh) * | 2022-08-19 | 2022-09-23 | 泸州龙芯微科技有限公司 | 一种igbt的封装方法以及封装结构 |
CN115841943A (zh) * | 2023-02-23 | 2023-03-24 | 淄博美林电子有限公司 | 栅极边缘化igbt芯片的制作方法及结构 |
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JP4409064B2 (ja) * | 2000-07-14 | 2010-02-03 | 三菱電機株式会社 | パワー素子を含む半導体装置 |
JP2002110889A (ja) * | 2000-09-28 | 2002-04-12 | Hitachi Ltd | 半導体装置及びその製造方法 |
JP4601874B2 (ja) | 2001-07-30 | 2010-12-22 | 三菱電機株式会社 | 半導体装置 |
US6975023B2 (en) * | 2002-09-04 | 2005-12-13 | International Rectifier Corporation | Co-packaged control circuit, transistor and inverted diode |
JP4479453B2 (ja) | 2004-10-01 | 2010-06-09 | 三菱電機株式会社 | 電力半導体装置 |
JP2007235004A (ja) | 2006-03-03 | 2007-09-13 | Mitsubishi Electric Corp | 半導体装置 |
JP5232367B2 (ja) | 2006-07-12 | 2013-07-10 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP5390064B2 (ja) | 2006-08-30 | 2014-01-15 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP4900148B2 (ja) * | 2007-09-13 | 2012-03-21 | 三菱電機株式会社 | 半導体装置 |
JP2009206140A (ja) * | 2008-02-26 | 2009-09-10 | Sumitomo Electric Ind Ltd | パワーモジュール |
JP4576448B2 (ja) | 2008-07-18 | 2010-11-10 | 三菱電機株式会社 | 電力用半導体装置 |
JP2010050395A (ja) * | 2008-08-25 | 2010-03-04 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JP2011086889A (ja) | 2009-10-19 | 2011-04-28 | Renesas Electronics Corp | 半導体装置およびその製造方法 |
JP5481161B2 (ja) * | 2009-10-30 | 2014-04-23 | ルネサスエレクトロニクス株式会社 | 半導体装置および電源装置 |
JP5921055B2 (ja) * | 2010-03-08 | 2016-05-24 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP2010192930A (ja) * | 2010-04-30 | 2010-09-02 | Rohm Co Ltd | アイランド露出型半導体装置 |
JP2012069764A (ja) * | 2010-09-24 | 2012-04-05 | On Semiconductor Trading Ltd | 回路装置およびその製造方法 |
JP5706251B2 (ja) | 2011-06-30 | 2015-04-22 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP5823798B2 (ja) | 2011-09-29 | 2015-11-25 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
WO2013046824A1 (ja) * | 2011-09-30 | 2013-04-04 | ローム株式会社 | 半導体装置 |
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2013
- 2013-06-14 JP JP2013125288A patent/JP6130238B2/ja active Active
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2014
- 2014-05-26 US US14/287,085 patent/US9704979B2/en active Active
- 2014-06-03 EP EP14170897.4A patent/EP2814058B1/en active Active
- 2014-06-11 KR KR1020140070957A patent/KR20140145994A/ko not_active Application Discontinuation
- 2014-06-13 CN CN201910486283.8A patent/CN110299341B/zh active Active
- 2014-06-13 CN CN201410265491.2A patent/CN104241259A/zh active Pending
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2015
- 2015-06-23 HK HK15105949.4A patent/HK1205592A1/xx unknown
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2017
- 2017-06-13 US US15/621,651 patent/US9997620B2/en active Active
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2018
- 2018-05-11 US US15/977,556 patent/US10453946B2/en active Active
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US20140367739A1 (en) | 2014-12-18 |
US9704979B2 (en) | 2017-07-11 |
EP2814058A3 (en) | 2015-05-06 |
KR20140145994A (ko) | 2014-12-24 |
JP2015002229A (ja) | 2015-01-05 |
CN110299341A (zh) | 2019-10-01 |
CN110299341B (zh) | 2022-11-04 |
CN104241259A (zh) | 2014-12-24 |
US9997620B2 (en) | 2018-06-12 |
US20170287818A1 (en) | 2017-10-05 |
EP2814058A2 (en) | 2014-12-17 |
EP2814058B1 (en) | 2020-09-30 |
US10453946B2 (en) | 2019-10-22 |
JP6130238B2 (ja) | 2017-05-17 |
US20180261690A1 (en) | 2018-09-13 |
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