HK1172156A1 - Process, voltage, and temperature sensor - Google Patents

Process, voltage, and temperature sensor

Info

Publication number
HK1172156A1
HK1172156A1 HK12112941.1A HK12112941A HK1172156A1 HK 1172156 A1 HK1172156 A1 HK 1172156A1 HK 12112941 A HK12112941 A HK 12112941A HK 1172156 A1 HK1172156 A1 HK 1172156A1
Authority
HK
Hong Kong
Prior art keywords
voltage
temperature sensor
sensor
temperature
Prior art date
Application number
HK12112941.1A
Other languages
English (en)
Chinese (zh)
Inventor
Jung Hee Lee
Original Assignee
天工方案公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 天工方案公司 filed Critical 天工方案公司
Publication of HK1172156A1 publication Critical patent/HK1172156A1/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2855—Environmental, reliability or burn-in testing
    • G01R31/2856—Internal circuit aspects, e.g. built-in test features; Test chips; Measuring material aspects, e.g. electro migration [EM]
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2601—Apparatus or methods therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2855—Environmental, reliability or burn-in testing
    • G01R31/2872—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation
    • G01R31/2874—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation related to temperature
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G1/00—Details of arrangements for controlling amplification
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G1/00—Details of arrangements for controlling amplification
    • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0088—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using discontinuously variable devices, e.g. switch-operated
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/447—Indexing scheme relating to amplifiers the amplifier being protected to temperature influence

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Environmental & Geological Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
  • Measuring Fluid Pressure (AREA)
  • Measurement Of Current Or Voltage (AREA)
  • Control Of Amplification And Gain Control (AREA)
HK12112941.1A 2009-07-28 2012-12-14 Process, voltage, and temperature sensor HK1172156A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US22905609P 2009-07-28 2009-07-28
PCT/US2009/057823 WO2011014206A1 (en) 2009-07-28 2009-09-22 Process, voltage, and temperature sensor

Publications (1)

Publication Number Publication Date
HK1172156A1 true HK1172156A1 (en) 2013-04-12

Family

ID=43529623

Family Applications (2)

Application Number Title Priority Date Filing Date
HK12112941.1A HK1172156A1 (en) 2009-07-28 2012-12-14 Process, voltage, and temperature sensor
HK14112806.3A HK1199329A1 (en) 2009-07-28 2012-12-14 Semiconductor process sensor and method of characterizing semiconductor process

Family Applications After (1)

Application Number Title Priority Date Filing Date
HK14112806.3A HK1199329A1 (en) 2009-07-28 2012-12-14 Semiconductor process sensor and method of characterizing semiconductor process

Country Status (9)

Country Link
US (3) US8049527B2 (de)
JP (3) JP5723879B2 (de)
KR (1) KR101632095B1 (de)
CN (2) CN102576686B (de)
DE (1) DE112009005104B4 (de)
GB (3) GB2503839B (de)
HK (2) HK1172156A1 (de)
TW (2) TWI600986B (de)
WO (1) WO2011014206A1 (de)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011014206A1 (en) 2009-07-28 2011-02-03 Skyworks Solutions, Inc. Process, voltage, and temperature sensor
TWI384210B (zh) * 2009-08-14 2013-02-01 Sunplus Technology Co Ltd 溫度偵測裝置與溫度偵測方法
US8680523B2 (en) * 2010-12-16 2014-03-25 IP Cube Partners (ICP) Co., Ltd. Sensor for semiconductor degradation monitoring and modeling
US9041422B2 (en) 2011-03-31 2015-05-26 Intel Mobile Communications GmbH Circuit arrangement with a plurality of on-chip monitor circuits and a control circuit and corresponding methods
US8830083B2 (en) * 2011-05-25 2014-09-09 General Electric Company Utility meter with temperature based actuation of a remote disconnect switch
US8598941B2 (en) * 2011-06-21 2013-12-03 Lsi Corporation Hybrid impedance compensation in a buffer circuit
KR101288695B1 (ko) * 2011-10-17 2013-07-22 주식회사 엘지씨엔에스 카세트 감지 장치 및 매체 처리 장치
EP2711800B1 (de) * 2012-09-24 2019-11-20 Telefonaktiebolaget LM Ericsson (publ) E/A-Zellkalibrierung
US9753473B2 (en) 2012-10-02 2017-09-05 Northrop Grumman Systems Corporation Two-stage low-dropout frequency-compensating linear power supply systems and methods
JP6088239B2 (ja) * 2012-12-20 2017-03-01 Hoya株式会社 光走査型内視鏡
TWI489093B (zh) * 2013-05-16 2015-06-21 國立成功大學 適用於積體電路晶片之多點溫度感測方法及其系統
US8963620B2 (en) 2013-07-23 2015-02-24 International Business Machines Corporation Controlling circuit voltage and frequency based upon location-dependent temperature
US9721936B2 (en) * 2013-08-07 2017-08-01 Skyworks Solutions, Inc. Field-effect transistor stack voltage compensation
US9620424B2 (en) 2013-11-12 2017-04-11 Skyworks Solutions, Inc. Linearity performance for radio-frequency switches
US20220013415A1 (en) * 2013-11-12 2022-01-13 Skyworks Solutions, Inc. Radio-frequency switching devices having improved voltage handling capability
TW201600839A (zh) * 2014-06-24 2016-01-01 國立成功大學 適用於三維積體電路之溫度感測系統及其方法
US20160003683A1 (en) * 2014-07-01 2016-01-07 Infineon Technologies Ag Remote temperature sensing
US10007749B2 (en) * 2014-09-23 2018-06-26 Intel Corporation Converged adaptive compensation scheme
CN104535822B (zh) * 2015-01-04 2019-08-09 吉唯达(上海)电气有限公司 一种固体绝缘极柱内置一体式电压电流传感器
CN105823971B (zh) * 2015-01-09 2018-11-16 中芯国际集成电路制造(上海)有限公司 芯片运行状态监测系统及监测方法
US9401643B1 (en) 2015-03-10 2016-07-26 International Business Machines Corporation Bias-temperature induced damage mitigation circuit
KR102282192B1 (ko) * 2015-07-23 2021-07-27 삼성전자 주식회사 미스매치 검출 및 보상 회로를 갖는 반도체 장치
TW201708835A (zh) 2015-08-04 2017-03-01 財團法人工業技術研究院 電子電路監測系統及電子電路監測方法
US9608605B2 (en) * 2015-08-06 2017-03-28 Futurewei Technologies, Inc. Apparatus and scheme for IO-pin-less calibration or trimming of on-chip regulators
US10527503B2 (en) 2016-01-08 2020-01-07 Apple Inc. Reference circuit for metrology system
US10107854B2 (en) 2016-08-17 2018-10-23 Atomera Incorporated Semiconductor device including threshold voltage measurement circuitry
US10132834B2 (en) * 2016-11-04 2018-11-20 Peaceful Thriving Enterprise Co., Ltd. Probe
KR20190029896A (ko) * 2017-09-13 2019-03-21 에스케이하이닉스 주식회사 온도 센싱 회로
US10365304B2 (en) * 2017-10-06 2019-07-30 Ge Aviation Systems Llc Discrete input determining circuit and method
JP6413005B2 (ja) * 2017-11-06 2018-10-24 ルネサスエレクトロニクス株式会社 半導体装置及び電子システム
JP6962795B2 (ja) 2017-11-22 2021-11-05 ルネサスエレクトロニクス株式会社 半導体装置および半導体システム
EP3648426B1 (de) * 2018-11-02 2022-01-26 Melexis Technologies SA Integrierte schaltung und verfahren zur datenkommunikation
US10505559B1 (en) * 2018-11-27 2019-12-10 Ipgreat Incorporated Process, voltage and temperature optimized asynchronous SAR ADC
TWI707220B (zh) * 2019-05-23 2020-10-11 瑞昱半導體股份有限公司 電壓控制電路和電壓控制方法
US11428583B2 (en) * 2019-08-23 2022-08-30 Taiwan Semiconductor Manufacturing Co., Ltd. Temperature sensor based on different wire temperature coefficient of resistance (TCR)
KR20210158223A (ko) * 2020-06-23 2021-12-30 에스케이하이닉스 주식회사 반도체 장치 및 이의 동작 방법
TWI753548B (zh) 2020-08-26 2022-01-21 華邦電子股份有限公司 低壓差穩壓器
US11196435B1 (en) 2020-09-08 2021-12-07 Apple Inc. Anti-aliasing techniques for time-to-digital converters

Family Cites Families (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4528505A (en) * 1983-03-29 1985-07-09 Motorola, Inc. On chip voltage monitor and method for using same
US5498972A (en) * 1990-08-15 1996-03-12 Telefonaktiebolaget Lm Ericsson Device for monitoring the supply voltage on integrated circuits
JP3017871B2 (ja) * 1991-01-02 2000-03-13 テキサス インスツルメンツ インコーポレイテツド Ｉｃデバイスに対するチップ上のバラツキ検知回路
JP3656758B2 (ja) * 1991-05-08 2005-06-08 富士通株式会社 動作状態検出回路
JPH05157780A (ja) * 1991-07-24 1993-06-25 Fujitsu Ltd 抵抗素子プロセスモニター装置
JPH1090356A (ja) * 1996-09-13 1998-04-10 Kawasaki Steel Corp 半導体装置
JPH1127068A (ja) * 1997-06-30 1999-01-29 Nec Ic Microcomput Syst Ltd 利得制御増幅器及びその制御方法
JPH11145237A (ja) * 1997-11-13 1999-05-28 Toshiba Ave Co Ltd プロセスばらつき判定回路及びプロセスばらつき判定システム
KR19990048860A (ko) * 1997-12-11 1999-07-05 김영환 반도체 메모리 소자의 온도 감지 회로
US6486711B1 (en) * 1998-07-15 2002-11-26 Texas Instruments Incorporated Capacitor-based exponential programmable gain amplifier
US6140833A (en) * 1998-11-16 2000-10-31 Siemens Aktiengesellschaft In-situ measurement method and apparatus for semiconductor processing
JP2003505966A (ja) * 1999-07-28 2003-02-12 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 電圧を電流に変換する方法及び装置
US6994284B1 (en) * 1999-10-15 2006-02-07 Ramun John R Multiple tool attachment system
JP3475237B2 (ja) * 2000-07-24 2003-12-08 東京大学長 電力制御装置及び方法並びに電力制御プログラムを記録した記録媒体
US6278325B1 (en) * 2000-12-13 2001-08-21 Industrial Technology Research Institute Programmable gain amplifier with a large extent for the variation of gains
JP2002185301A (ja) * 2000-12-15 2002-06-28 Fujitsu Ltd 半導体装置及び制御方法
KR20020061956A (ko) * 2001-01-19 2002-07-25 삼성전자 주식회사 전력증폭기의 온도 보상 회로
DE10105473A1 (de) * 2001-02-05 2002-10-10 Endress & Hauser Gmbh & Co Kg Vorrichtung zur Messung und/oder Überwachung einer Prozeßgröße
US6538508B2 (en) * 2001-04-27 2003-03-25 Broadcom Corporation Programmable gain amplifier with glitch minimization
US6628135B2 (en) * 2001-09-18 2003-09-30 Sun Microsystems, Inc. Analog-based on-chip voltage sensor
US6566900B2 (en) * 2001-09-27 2003-05-20 Sun Microsystems, Inc. Integrated on-chip process, temperature, and voltage sensor module
JP4021643B2 (ja) * 2001-10-29 2007-12-12 富士通株式会社 温度検出機能を備えた半導体装置
US6862438B2 (en) * 2002-03-25 2005-03-01 Broadcom Corporation Programmable gain amplifier (PGA) with AGC in receiver section
US6833759B2 (en) * 2002-01-23 2004-12-21 Broadcom Corporation System and method for a programmable gain amplifier
US7309998B2 (en) * 2002-12-02 2007-12-18 Burns Lawrence M Process monitor for monitoring an integrated circuit chip
JP2004213747A (ja) * 2002-12-27 2004-07-29 Nec Micro Systems Ltd 基準電圧発生回路
US6847904B2 (en) * 2003-02-25 2005-01-25 Microchip Technology Incorporated Multi-channel programmable gain amplifier controlled with a serial interface
US7180211B2 (en) * 2003-09-22 2007-02-20 Micro Technology, Inc. Temperature sensor
KR100541824B1 (ko) * 2003-10-06 2006-01-10 삼성전자주식회사 반도체 집적회로에 채용하기 적합한 온도감지 회로
JP2005134145A (ja) * 2003-10-28 2005-05-26 Seiko Instruments Inc 温度センサ回路
US7218169B2 (en) * 2003-12-23 2007-05-15 Agere Syatems Inc. Reference compensation circuit
US7098738B2 (en) * 2003-12-24 2006-08-29 Broadcom Corporation Fine step and large gain range programmable gain amplifier
US7171327B2 (en) * 2004-03-24 2007-01-30 Infineon Technologies Ag Temperature sensor scheme
US7239163B1 (en) * 2004-06-23 2007-07-03 Ridgetop Group, Inc. Die-level process monitor and method
US7369816B2 (en) * 2004-08-06 2008-05-06 Broadcom Corporation Highly accurate temperature sensor employing mixed-signal components
US7127368B2 (en) * 2004-11-19 2006-10-24 Stmicroelectronics Asia Pacific Pte. Ltd. On-chip temperature sensor for low voltage operation
US7215202B2 (en) * 2005-02-25 2007-05-08 Texas Instruments Incorporated Programmable gain amplifier and method
US7144297B2 (en) 2005-05-03 2006-12-05 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus to enable accurate wafer prediction
KR20060118733A (ko) * 2005-05-17 2006-11-24 주식회사 하이닉스반도체 반도체 장치의 온도 보상 발진 회로
US7135909B1 (en) * 2005-05-17 2006-11-14 Sigmatel, Inc. Temperature sensor circuit and system
US7204638B2 (en) * 2005-05-23 2007-04-17 Etron Technology, Inc. Precise temperature sensor with smart programmable calibration
US7312648B2 (en) * 2005-06-23 2007-12-25 Himax Technologies, Inc. Temperature sensor
US7495465B2 (en) 2005-07-22 2009-02-24 Freescale Semiconductor, Inc. PVT variation detection and compensation circuit
US7276962B1 (en) * 2005-11-21 2007-10-02 National Semiconductor Corporation Circuit topology for reduced harmonic distortion in a switched-capacitor programmable gain amplifier
JP4832128B2 (ja) * 2006-03-20 2011-12-07 富士通セミコンダクター株式会社 終端抵抗調整方法、半導体集積回路及び半導体装置
JP5260837B2 (ja) 2006-03-24 2013-08-14 富士通セミコンダクター株式会社 半導体集積回路の設計方法及び半導体集積回路の設計装置
US7302363B2 (en) * 2006-03-31 2007-11-27 Tokyo Electron Limited Monitoring a system during low-pressure processes
CN101485089B (zh) * 2006-05-05 2012-11-28 新思科技有限公司 电子电路及其方法
JP2008017300A (ja) * 2006-07-07 2008-01-24 Nec Electronics Corp 半導体集積回路装置および入力回路
JP4953716B2 (ja) * 2006-07-25 2012-06-13 パナソニック株式会社 半導体集積回路およびその関連技術
US7948819B2 (en) 2006-11-21 2011-05-24 Agere Systems Inc. Integrated circuit having a memory with process-voltage-temperature control
US8237492B2 (en) * 2006-12-06 2012-08-07 Broadcom Corporation Method and system for a process sensor to compensate SOC parameters in the presence of IC process manufacturing variations
JP4524688B2 (ja) * 2007-01-23 2010-08-18 エルピーダメモリ株式会社 基準電圧発生回路及び半導体集積回路装置
US7714635B2 (en) * 2007-02-06 2010-05-11 International Business Machines Corporation Digital adaptive voltage supply
US7936153B2 (en) * 2007-02-06 2011-05-03 International Business Machines Corporation On-chip adaptive voltage compensation
JP2008306145A (ja) * 2007-06-11 2008-12-18 Toshiba Corp 抵抗調整回路及び半導体集積回路
WO2011014206A1 (en) 2009-07-28 2011-02-03 Skyworks Solutions, Inc. Process, voltage, and temperature sensor

Also Published As

Publication number Publication date
TW201530272A (zh) 2015-08-01
GB2503839B (en) 2014-03-05
GB201201448D0 (en) 2012-03-14
US8049527B2 (en) 2011-11-01
JP2014160831A (ja) 2014-09-04
US9372222B2 (en) 2016-06-21
HK1199329A1 (en) 2015-06-26
GB2484442B (en) 2013-12-25
US8717060B2 (en) 2014-05-06
WO2011014206A1 (en) 2011-02-03
JP5723879B2 (ja) 2015-05-27
GB2484442A (en) 2012-04-11
JP2015195393A (ja) 2015-11-05
DE112009005104B4 (de) 2022-03-03
CN104135236A (zh) 2014-11-05
CN102576686A (zh) 2012-07-11
GB2506538B (en) 2014-07-02
CN104135236B (zh) 2017-08-08
KR20120055570A (ko) 2012-05-31
US20140159767A1 (en) 2014-06-12
TWI494721B (zh) 2015-08-01
TWI600986B (zh) 2017-10-01
GB201321458D0 (en) 2014-01-22
JP2013500602A (ja) 2013-01-07
CN102576686B (zh) 2015-04-01
JP5775946B2 (ja) 2015-09-09
KR101632095B1 (ko) 2016-06-20
US20110029266A1 (en) 2011-02-03
GB201317983D0 (en) 2013-11-27
US20120034713A1 (en) 2012-02-09
GB2503839A (en) 2014-01-08
TW201118516A (en) 2011-06-01
DE112009005104T5 (de) 2012-09-13
JP6067792B2 (ja) 2017-01-25
GB2506538A (en) 2014-04-02

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