HK1129148A1 - Active matrix substrate and liquid crystal display device provided with same - Google Patents
Active matrix substrate and liquid crystal display device provided with sameInfo
- Publication number
- HK1129148A1 HK1129148A1 HK09109081.2A HK09109081A HK1129148A1 HK 1129148 A1 HK1129148 A1 HK 1129148A1 HK 09109081 A HK09109081 A HK 09109081A HK 1129148 A1 HK1129148 A1 HK 1129148A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- active matrix
- matrix substrate
- wires
- source
- liquid crystal
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title abstract 5
- 239000011159 matrix material Substances 0.000 title abstract 3
- 239000004973 liquid crystal related substance Substances 0.000 title 1
- 230000003071 parasitic effect Effects 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/13606—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit having means for reducing parasitic capacitance
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136259—Repairing; Defects
- G02F1/136263—Line defects
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/13629—Multilayer wirings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
- G02F2201/121—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode common or background
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006263506 | 2006-09-27 | ||
PCT/JP2007/059513 WO2008038432A1 (en) | 2006-09-27 | 2007-05-08 | Active matrix substrate and liquid crystal display device provided with same |
Publications (1)
Publication Number | Publication Date |
---|---|
HK1129148A1 true HK1129148A1 (en) | 2009-11-20 |
Family
ID=39229875
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK09109081.2A HK1129148A1 (en) | 2006-09-27 | 2009-09-30 | Active matrix substrate and liquid crystal display device provided with same |
HK09109245.5A HK1130908A1 (en) | 2006-09-27 | 2009-10-06 | Active matrix substrate and liquid crystal display device provided with same |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK09109245.5A HK1130908A1 (en) | 2006-09-27 | 2009-10-06 | Active matrix substrate and liquid crystal display device provided with same |
Country Status (8)
Country | Link |
---|---|
US (1) | US20090201455A1 (ko) |
EP (1) | EP2071394B1 (ko) |
JP (1) | JP4885968B2 (ko) |
KR (1) | KR101055011B1 (ko) |
CN (2) | CN101479657B (ko) |
AT (1) | ATE530945T1 (ko) |
HK (2) | HK1129148A1 (ko) |
WO (1) | WO2008038432A1 (ko) |
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JP5216204B2 (ja) | 2006-10-31 | 2013-06-19 | 株式会社半導体エネルギー研究所 | 液晶表示装置及びその作製方法 |
KR101329284B1 (ko) * | 2007-02-08 | 2013-11-14 | 삼성디스플레이 주식회사 | 표시 기판 및 이의 제조 방법 |
JP5247507B2 (ja) * | 2008-08-22 | 2013-07-24 | 株式会社ジャパンディスプレイウェスト | 液晶表示装置 |
JP2010060967A (ja) * | 2008-09-05 | 2010-03-18 | Epson Imaging Devices Corp | 液晶表示装置及び電子機器 |
JP5054656B2 (ja) | 2008-10-28 | 2012-10-24 | カシオ計算機株式会社 | 液晶表示素子 |
TWI613489B (zh) * | 2008-12-03 | 2018-02-01 | 半導體能源研究所股份有限公司 | 液晶顯示裝置 |
JP2010145870A (ja) * | 2008-12-19 | 2010-07-01 | Sony Corp | 液晶パネル及び電子機器 |
JP4911167B2 (ja) | 2008-12-19 | 2012-04-04 | ソニー株式会社 | 液晶パネル及び電子機器 |
KR101545642B1 (ko) * | 2009-02-09 | 2015-08-20 | 삼성디스플레이 주식회사 | 표시 장치 및 이의 제조 방법 |
KR101746198B1 (ko) | 2009-09-04 | 2017-06-12 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시장치 및 전자기기 |
US8804081B2 (en) * | 2009-12-18 | 2014-08-12 | Samsung Display Co., Ltd. | Liquid crystal display device with electrode having opening over thin film transistor |
KR101035349B1 (ko) * | 2009-12-31 | 2011-05-20 | 하이디스 테크놀로지 주식회사 | 디지털 엑스-레이 검출기 및 그 제조방법 |
JP2011158690A (ja) * | 2010-02-01 | 2011-08-18 | Sony Corp | 液晶表示パネル及び電子機器 |
JP2012018970A (ja) * | 2010-07-06 | 2012-01-26 | Mitsubishi Electric Corp | 薄膜トランジスタアレイ基板、その製造方法、及び液晶表示装置 |
KR101785028B1 (ko) | 2011-01-20 | 2017-11-07 | 삼성디스플레이 주식회사 | 표시 장치 및 그 제조 방법 |
US9377644B2 (en) | 2011-03-25 | 2016-06-28 | Sharp Kabushiki Kaisha | Display device |
KR101841770B1 (ko) * | 2011-09-02 | 2018-03-26 | 엘지디스플레이 주식회사 | 산화물 박막 트랜지스터를 구비한 평판 표시장치 및 그의 제조방법 |
CN102645803B (zh) * | 2011-10-17 | 2014-06-18 | 京东方科技集团股份有限公司 | 像素单元,阵列基板、液晶面板、显示装置及其制造方法 |
KR101973584B1 (ko) | 2012-02-10 | 2019-04-30 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 이를 포함하는 액정 표시 장치 |
WO2013146216A1 (ja) * | 2012-03-27 | 2013-10-03 | シャープ株式会社 | 半導体装置、半導体装置の製造方法および表示装置 |
US9625764B2 (en) | 2012-08-28 | 2017-04-18 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device |
US8927985B2 (en) * | 2012-09-20 | 2015-01-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP2014228565A (ja) | 2013-05-17 | 2014-12-08 | パナソニック液晶ディスプレイ株式会社 | 液晶表示装置及び液晶表示装置の製造方法 |
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KR102098304B1 (ko) * | 2013-12-10 | 2020-05-27 | 삼성디스플레이 주식회사 | 액정 표시 장치 및 그 제조 방법 |
JP2015118193A (ja) | 2013-12-18 | 2015-06-25 | 株式会社ジャパンディスプレイ | 液晶表示装置 |
US9530801B2 (en) * | 2014-01-13 | 2016-12-27 | Apple Inc. | Display circuitry with improved transmittance and reduced coupling capacitance |
CN106062619B (zh) * | 2014-02-28 | 2019-04-16 | 凸版印刷株式会社 | 液晶显示装置 |
CN104218041B (zh) | 2014-08-15 | 2017-12-08 | 京东方科技集团股份有限公司 | 阵列基板及制备方法和显示装置 |
CN104460140B (zh) * | 2015-01-06 | 2017-09-29 | 京东方科技集团股份有限公司 | 阵列基板及显示装置 |
CN104536636B (zh) * | 2015-01-27 | 2017-12-08 | 京东方科技集团股份有限公司 | 一种阵列基板、触控面板及阵列基板的制作方法 |
US11710748B2 (en) | 2015-01-27 | 2023-07-25 | Beijing Boe Optoelectronics Technology Co., Ltd. | Array substrate and touch panel and manufacturing method of array substrate |
CN104966719A (zh) * | 2015-06-29 | 2015-10-07 | 武汉华星光电技术有限公司 | 显示面板、薄膜晶体管阵列基板及其制作方法 |
CN104932127B (zh) * | 2015-07-09 | 2018-07-06 | 京东方科技集团股份有限公司 | 一种阵列基板及其制作方法、显示装置 |
CN105336684A (zh) * | 2015-10-22 | 2016-02-17 | 京东方科技集团股份有限公司 | 多晶硅阵列基板的制作方法、多晶硅阵列基板及显示面板 |
JP6117316B2 (ja) * | 2015-11-05 | 2017-04-19 | 株式会社ジャパンディスプレイ | 液晶表示装置 |
CN105655349B (zh) * | 2016-01-05 | 2019-08-20 | 京东方科技集团股份有限公司 | 阵列基板及其制作方法、显示面板、显示装置 |
CN105720012A (zh) * | 2016-02-18 | 2016-06-29 | 深圳市华星光电技术有限公司 | 双栅极tft阵列基板及制作方法 |
KR102510444B1 (ko) * | 2016-04-28 | 2023-03-15 | 삼성디스플레이 주식회사 | 표시 장치 및 표시 장치 제조용 마스크 |
CN106206617A (zh) * | 2016-08-29 | 2016-12-07 | 武汉华星光电技术有限公司 | 基于低温多晶硅的阵列基板及其制作方法 |
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KR100798761B1 (ko) * | 1999-09-07 | 2008-01-29 | 가부시키가이샤 히타치세이사쿠쇼 | 액정표시장치 |
KR100325079B1 (ko) * | 1999-12-22 | 2002-03-02 | 주식회사 현대 디스플레이 테크놀로지 | 고개구율 및 고투과율 액정표시장치의 제조방법 |
KR100322968B1 (ko) * | 1999-12-22 | 2002-02-02 | 주식회사 현대 디스플레이 테크놀로지 | 프린지 필드 구동 액정 표시 장치의 제조방법 |
TW498178B (en) * | 2000-05-02 | 2002-08-11 | Hannstar Display Corp | Manufacturing method and structure for in-plane switching mode liquid crystal display unit |
KR20020002052A (ko) * | 2000-06-29 | 2002-01-09 | 주식회사 현대 디스플레이 테크놀로지 | 프린지 필드 구동 모드 액정 표시 장치의 제조방법 |
JP3881248B2 (ja) * | 2002-01-17 | 2007-02-14 | 株式会社日立製作所 | 液晶表示装置および画像表示装置 |
JP4085170B2 (ja) * | 2002-06-06 | 2008-05-14 | 株式会社 日立ディスプレイズ | 液晶表示装置 |
JP2004165286A (ja) * | 2002-11-11 | 2004-06-10 | Toshiba Corp | 薄膜トランジスタの製造方法 |
KR100975734B1 (ko) * | 2003-09-08 | 2010-08-12 | 엘지디스플레이 주식회사 | 횡전계방식 액정 표시 장치용 어레이 기판 및 그 제조 방법 |
JP4326307B2 (ja) * | 2003-11-19 | 2009-09-02 | 株式会社 日立ディスプレイズ | 液晶表示装置 |
KR101007206B1 (ko) * | 2003-12-11 | 2011-01-12 | 엘지디스플레이 주식회사 | 프린지 필드 스위칭 모드 액정표시장치 및 그 제조방법 |
JP4217170B2 (ja) * | 2004-01-28 | 2009-01-28 | 株式会社 日立ディスプレイズ | 液晶表示装置およびその駆動方法 |
-
2007
- 2007-05-08 US US12/301,651 patent/US20090201455A1/en not_active Abandoned
- 2007-05-08 WO PCT/JP2007/059513 patent/WO2008038432A1/ja active Application Filing
- 2007-05-08 KR KR1020087029724A patent/KR101055011B1/ko not_active IP Right Cessation
- 2007-05-08 CN CN2007800239330A patent/CN101479657B/zh not_active Expired - Fee Related
- 2007-05-08 JP JP2008536287A patent/JP4885968B2/ja not_active Expired - Fee Related
- 2007-05-08 EP EP07742948A patent/EP2071394B1/en not_active Not-in-force
- 2007-05-08 CN CN2010105361968A patent/CN102096251B/zh not_active Expired - Fee Related
- 2007-05-08 AT AT07742948T patent/ATE530945T1/de not_active IP Right Cessation
-
2009
- 2009-09-30 HK HK09109081.2A patent/HK1129148A1/xx not_active IP Right Cessation
- 2009-10-06 HK HK09109245.5A patent/HK1130908A1/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JP4885968B2 (ja) | 2012-02-29 |
US20090201455A1 (en) | 2009-08-13 |
CN102096251B (zh) | 2013-07-03 |
HK1130908A1 (en) | 2010-01-08 |
CN101479657B (zh) | 2010-12-08 |
KR101055011B1 (ko) | 2011-08-05 |
ATE530945T1 (de) | 2011-11-15 |
WO2008038432A1 (en) | 2008-04-03 |
EP2071394A1 (en) | 2009-06-17 |
EP2071394B1 (en) | 2011-10-26 |
CN101479657A (zh) | 2009-07-08 |
EP2071394A4 (en) | 2010-07-21 |
KR20090015951A (ko) | 2009-02-12 |
CN102096251A (zh) | 2011-06-15 |
JPWO2008038432A1 (ja) | 2010-01-28 |
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