HK1127971A1 - Exposure method, exposure apparatus, photomask and photomask manufacturing method - Google Patents

Exposure method, exposure apparatus, photomask and photomask manufacturing method

Info

Publication number
HK1127971A1
HK1127971A1 HK09105345.2A HK09105345A HK1127971A1 HK 1127971 A1 HK1127971 A1 HK 1127971A1 HK 09105345 A HK09105345 A HK 09105345A HK 1127971 A1 HK1127971 A1 HK 1127971A1
Authority
HK
Hong Kong
Prior art keywords
photomask
exposure
manufacturing
exposure apparatus
photomask manufacturing
Prior art date
Application number
HK09105345.2A
Other languages
English (en)
Inventor
Masaki Kato
Original Assignee
Nikon Corp Kabushiki Kaisha Nikon
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp Kabushiki Kaisha Nikon filed Critical Nikon Corp Kabushiki Kaisha Nikon
Publication of HK1127971A1 publication Critical patent/HK1127971A1/xx

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70791—Large workpieces, e.g. glass substrates for flat panel displays or solar panels
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
HK09105345.2A 2006-02-16 2009-06-16 Exposure method, exposure apparatus, photomask and photomask manufacturing method HK1127971A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006039372 2006-02-16
JP2006279389A JP4984810B2 (ja) 2006-02-16 2006-10-13 露光方法、露光装置及びフォトマスク
PCT/JP2007/052241 WO2007094235A1 (ja) 2006-02-16 2007-02-08 露光方法、露光装置、フォトマスク及びフォトマスクの製造方法

Publications (1)

Publication Number Publication Date
HK1127971A1 true HK1127971A1 (en) 2009-10-09

Family

ID=38371422

Family Applications (1)

Application Number Title Priority Date Filing Date
HK09105345.2A HK1127971A1 (en) 2006-02-16 2009-06-16 Exposure method, exposure apparatus, photomask and photomask manufacturing method

Country Status (8)

Country Link
US (2) US8159649B2 (ja)
EP (1) EP1986221A4 (ja)
JP (1) JP4984810B2 (ja)
KR (1) KR101404264B1 (ja)
CN (2) CN101375372B (ja)
HK (1) HK1127971A1 (ja)
TW (1) TWI431430B (ja)
WO (1) WO2007094235A1 (ja)

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CN102687078B (zh) * 2010-01-25 2014-09-17 夏普株式会社 曝光装置、液晶显示装置及其制造方法
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US9612530B2 (en) 2011-02-28 2017-04-04 D2S, Inc. Method and system for design of enhanced edge slope patterns for charged particle beam lithography
US9057956B2 (en) * 2011-02-28 2015-06-16 D2S, Inc. Method and system for design of enhanced edge slope patterns for charged particle beam lithography
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JP5704535B2 (ja) * 2011-04-05 2015-04-22 株式会社ブイ・テクノロジー マイクロレンズアレイを使用した露光装置
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CN103207526B (zh) * 2012-01-16 2016-08-10 昆山允升吉光电科技有限公司 一种曝光修正补偿方法
CN103217424B (zh) * 2012-01-19 2017-05-03 昆山思拓机器有限公司 软板分区对位校正方法
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TWI611996B (zh) * 2012-05-18 2018-01-21 尼康股份有限公司 基板處理裝置
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CN104749902B (zh) * 2013-12-31 2017-02-15 上海微电子装备有限公司 掩模板面型整形装置
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CN107255891B (zh) * 2017-08-08 2023-02-03 惠科股份有限公司 一种显示装置的制作方法
JP2019117403A (ja) * 2019-03-22 2019-07-18 株式会社ニコン 露光装置、並びにディスプレイ及びデバイスの製造方法

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Also Published As

Publication number Publication date
KR101404264B1 (ko) 2014-06-05
TWI431430B (zh) 2014-03-21
KR20080101866A (ko) 2008-11-21
US8159649B2 (en) 2012-04-17
CN102346378B (zh) 2015-05-20
EP1986221A4 (en) 2011-11-23
CN101375372A (zh) 2009-02-25
CN102346378A (zh) 2012-02-08
US20080013061A1 (en) 2008-01-17
TW200734832A (en) 2007-09-16
CN101375372B (zh) 2011-11-09
US20100315611A1 (en) 2010-12-16
JP2007249169A (ja) 2007-09-27
EP1986221A1 (en) 2008-10-29
JP4984810B2 (ja) 2012-07-25
US8654310B2 (en) 2014-02-18
WO2007094235A1 (ja) 2007-08-23

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PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20210208