TWI250376B - Method of double exposure and fabricating an attenuated phase shifting mask - Google Patents

Abstract

A method of double exposure and a method of fabricating an attenuated phase shifting mask. First, a designed pattern is separated to a frame pattern and a bulk pattern which is surrounding by the frame pattern. Next, the frame pattern is exposured precisely by a high alignment exposure apparatus. Finally, the bulk pattern is exposured to fill up the frame pattern by a general exposure apparatus. The method of fabricating an attenuated phase shifting mask by executing the method of double exposure is disclosed.

Description

1250376 V. INSTRUCTION DESCRIPTION OF THE INVENTION (1) Field of the Invention The present invention relates to a method of double exposure, which is related to a knee-length®

In particular, the method of 5 Hai for a long time exposure is used to produce a dimming phase processing method. W As early as J, the prior art, in the lithography imaging technology, due to the continuous reduction of the size of the integrated circuit, the requirements for the accuracy of the pattern exposure are getting higher and higher. However, the reduction in size causes an optical proximity effect when the mask is used for exposure, and the accuracy of the pattern is broken. Therefore, many techniques have been proposed to improve the accuracy of imaging. One of the widely used techniques is the application of a phase shift mask (PSM). As the demand for thinning becomes more and more demanding, the phase shift mask can use the original organic table, and the purpose of improving the resolution and increasing the depth of focus is achieved without changing the process. In addition to being used for I-line lithography, deep ultraviolet light micro-materials, phase-shift reticle can also be used for very short ultraviolet lithography, even for X-ray lithography. Since the phase shift mask can effectively alleviate the negative effects of the optical proximity effect, it itself produces many different types of phase shift masks due to continuous improvement. A can be divided into the following types: interleaved phase shift mask (Ulternate PSM), phase shift phase shift mask only PSM), edge type phase shift mask (Hm psM), frame type phase shift mask (outngger PSM), dimming phase shift mask PSM) and edge dimming composite phase shift mask (attenu PSM) 〇

1250376 V. INSTRUCTIONS (2) Dimming phase shift masks are currently widely used to make subtle patterns. U.S. Patent No. 6,150, filed on Jan. 12,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, In general, a dimming phase shift mask is usually made of a transparent quartz glass as a substrate, and a molybdenum oxynitride having a transmittance of about 6% is used as a phase shift layer, and metal chrome is used as a light shielding layer. Floor. January 21, 2000, No. 6, 403, 267, and National Patent No. 6,492, 0 69. U.S. Patent No. Tzu et al., published on February 27, 2000 by Wu et al., discloses that the current common dimming phase is equivalent to the US Patent No. 6 published by Tzu et al. , No. 194, No. 103, discloses a method for producing a "phase shift mask" by using electronic double exposure. In the method of manufacturing a conventional heat-reducing phase shift mask, by means of an exposure machine Accurately align the positioning to define the reticle pattern & 八 L / 士 Ί Ί 1 must be placed with the pattern of the pattern will be equivalent, while the highlight is complex "丨v field months% v entrance ^ exposure In a precise position, it is necessary to use a high-precision exposure machine to accurately measure the exposure time of the machine, and the need for a relatively long exposure room increases the time cost of the reticle.

1250376 V. INSTRUCTIONS (3) Providing a manufacturer of a dimming phase shift mask, not only can the pattern be accurately formed on the mask, but also does not require too much mask production time. SUMMARY OF THE INVENTION The present invention can only be used between patterns. The present invention solves the problem of the hood of the present invention by dimming the pattern to two accurately. One of the objectives of the younger one is to provide a pattern of light-shielding layers that are exposed to precise positions, pre-engraved phase of the same layer, and a predetermined pattern of light-shielding layers to be predetermined in order to ensure that the light-shielding layer must be phased. The outer frame of the pattern is the second purpose of the exposure machine. The second exposure cover is again etched in order to make the pattern out of the shadow. It is often necessary to accurately distinguish the outer frame. The reason for providing an operation is that when a photo method is applied to reduce the reticle reticle, the gold is intended to move the continuation pattern to the pattern of the phase shift layer. The meal is removed and the exposure is therefore more time. In order to provide a double exposure method, the method of double exposure at the time of exposure can be greatly shortened, and the chrome-shielding layered opaque layer produced by the reticle can be produced with problems and productivity. The second, however, is the precise position of the exposure of the second second embodiment of the present invention. The first is the production of the pre-dimmer phase, time. The light layer of the I insect defines a layer as a cover for the second rhyme engraved in the dimming area, and the main special frame required for the name of the insect, and the displacement light of the predetermined pattern can be used to make the phase-separable displacement screen. The main phase shift of the larvae and the pattern to be removed will be shaded to make the rest of the area

0503-8769TWf(Nl) ; TSMC2001-1757; felicia.ptd Page 7 1250376, invention description (4) The domain 'is the area surrounded by the outer frame of the pattern, and then the exposed frame is exposed by a general exposure machine. The surrounding area is all exposed. In this way, the first exposure does not require a relatively high positional accuracy, and a general exposure machine can be used as long as the position error of the exposure machine exposure does not exceed the range of the outer frame pattern. In order to achieve the above object, the present invention proposes a method of double exposure. The steps of this method mainly include:

First, an energy sensing layer is provided. Next, an outer frame pattern is exposed to the energy sensing layer. Finally, the area surrounded by the frame pattern outside the energy sensing layer is exposed. Wherein the energy sensing layer is a photoresist layer or a electron beam resist layer. According to the present invention, the outer frame pattern is exposed by a first exposure machine. The area surrounded by the outer frame pattern of the energy sensing layer is exposed by a first exposure machine. Wherein, the position accuracy of the first exposure machine is higher than that of the second exposure machine. As described above, the width of the outer frame pattern is larger than the positional accuracy of the second exposure stage. For example, if the position accuracy of the second exposure machine is greater than 1 mm, the width of the outer frame pattern is greater than 2 mm. As previously mentioned, the first exposure station described above includes a laser writer or a focused electron beam machine. The above second exposure machine can be a general precision exposure machine. As described above, the above energy sensing layer is a photoresist layer. The present invention applies the double exposure method to the fabrication of a dimming phase shift mask, and thus the present invention also provides a method for fabricating a dimming phase shift mask.

0503-8769TWf(Nl) ; TSMC200b 1757, fehcia.ptd 1250376 The steps of the method mainly include providing a surface to sequentially stack one to expose the above-mentioned pattern amount of the sensing layer, the surface of the light substrate is predetermined, and the position of the frame outside the exposure machine is accurate. 'The engraving is patterned to the patterned portion of the exposed portion to be shaded to cover the surface. In addition to the case, the degree of envelopment is higher than the above-mentioned regional energy sensation. The fifth method, the invention description (5), firstly, the above-mentioned patterning of the opaque layer, followed by the full layer and part Exposed machine, exposed inside. Next, the first of the above-mentioned light-shielding. Next, the optical layer is predetermined to be a sensing layer. Until the above patterned surface. As before, the sensing layer. As described above, the above-mentioned pattern sensing layer is electrically connected to the previous electron beam machine table. a light-transmissive substrate phase shifting layer and a property forming a light-transmitting light-shielding, using a first-layer predetermined pattern exposure machine to implement a development case outer frame and finally, the above light-shielding layer, directly describing the phase shift layer After the light-emitting base layer has the same pattern as above, a frame is used to expose the second exposed energy-sensing layer in the energy-sensing region to form a mask layer patterned phase/pattern, wherein the pattern is formed. The shading first exposure sensing layer is internal, and the masking energy in the optical machine is further characterized by removing the above-mentioned patterning energy after the patterning of the surname shifting layer. The transparent substrate is made of quartz (Quartz). The phase shifting layer is composed of molybdenum oxynitride (M〇Si〇N), and the light shielding layer is composed of metallic chromium (cr). The above two-bundle resist layer. According to L, the first exposure machine includes a laser writer or focus. The above second exposure machine can be exposed to general accuracy

0503-8769TWf(Nl) ; TSMC200M757; fel icia.ptd Page 9 1250376 V. Description of invention (6)

As described above, the method for forming the light-transmissive substrate in which the surface-patterned phase-shifting layer and the patterned light-shielding layer are sequentially stacked on the surface includes: First, providing a light-transmitting substrate having a phase shifting layer on the surface. Next, a patterned light shielding layer having a predetermined pattern of a phase shift layer is formed on the surface of the phase shift layer. Finally, the phase-shifting layer is patterned by using the patterned light-shielding layer as a mask until the surface of the light-transmitting substrate is exposed. According to the present invention, the width of the above-mentioned outer frame pattern is larger than the positional accuracy of the second exposure stage. For example, if the position precision of the second exposure machine is greater than 1 mm, the width of the outer frame pattern is preferably greater than 2 mm. According to the present invention, after etching the patterned light shielding layer, the method further comprises: transmitting a light source through the light-reducing phase shifting mask to transfer the pattern of the light-reducing phase mask to a surface of a semiconductor substrate. The above-mentioned objects, features and advantages of the present invention will become more apparent from the following detailed description of the preferred embodiments of the invention. Process Diagram of the lc Diagram FIG. 2A to FIG. 2B are plan views illustrating a preferred example according to one of the present inventions. Here, Fig. 1B and Fig. 1C are cross-sectional views of the XX' and YY' lines along the 2A and 2B, respectively. σ First, please refer to the first diagram to form an energy sensing layer 1

1250376 V. INSTRUCTIONS (7) The surface of a substrate (not shown) to be patterned. The energy sensing layer 丨〇 is, for example, an electron beam resist layer or a photoresist layer. The substrate may be a material of any one of a semiconductor substrate or a semiconductor element, such as a dielectric layer, a polysilicon gate layer or a metal wire layer, or a transparent substrate of a photomask, such as glass or quartz. The present invention is applicable to fields that require patterning by lithography in any process. Next, referring to FIG. 1B, a first exposure program S5〇〇 is performed using a first exposure machine 700, and an outer frame pattern 1〇4 is exposed to the energy sensing layer 102. After the first exposure S500, the energy sensing layer 102a has an outer frame pattern 104, and the energy sensing layer 1 〇2 a of the second drawing has a top view. The first exposure machine 7 0 1 must be accurately positioned. Extremely high machine, such as laser writer (丨aserwriter) or focused electron beam writer (electron beam writer). Here, the positional accuracy refers to the difference between the actual position of the exposed pattern and the predetermined position of the pattern. Next, referring to FIG. 1C, a second exposure program S6 〇〇 is implemented using a second exposure machine 7 0 2 to make the area surrounded by the outer frame pattern 104 in the energy sensing layer 102a. 6 all exposed. The complete pattern 104, 106 is exposed in the energy sensing layer 10b after the second exposure S600, as shown in Fig. 2B. The second exposure machine 7 0 2 can be used with a general precision exposure machine, and there is no need for high positional accuracy, such as a yellow light lithography machine, or a comprehensive exposure electron beam, a first exposure machine and The second exposure machine must be exposed to the same material energy sensing layer 1 0 2 b so it needs to have the same energy

0503-8769TWf(Nl) ; TSMC2001-1757; felicia.ptd Page 11 1250376 V. Description of invention (8) Source. Since the purpose of the first exposure procedure §5〇〇 is to determine the pattern position', the first exposure station 7〇1 requires a relatively high positional accuracy. The positional accuracy of the first exposure machine is higher than that of the second exposure machine described above. As for the position accuracy of the second 5-optical machine, the requirement is not high, as long as the visibility of the outer frame pattern 1〇4 is greater than the position accuracy of the second exposure machine 7 〇 2. Please come again, the wide needle of the outer frame pattern 1 () 4 refers to the narrowest position of the outer frame pattern m, for example, when the position accuracy of the second exposure machine 7 〇 2 is greater than 丨, the outer frame The width D of the pattern 104 needs to be greater than 2 mm, and the range image exposed by the second exposure program S600 overlaps with the outer frame pattern 1〇4 at least above, but the overlapped portion does not extend beyond the outer frame pattern 1〇4. [Embodiment 2] Hereinafter, a preferred embodiment of the present invention will be described with reference to a process sectional view of Figs. 3A to 3K and a plan view of Figs. 4A to 4B. The double exposure method of the present invention can be applied to the fabrication of a dimming phase shift mask. When a dimming phase shift mask is fabricated, the etching of the metallic chrome mask can be divided into two. The purpose of the first etching is to define a predetermined pattern of phase shifting layers on the light shielding layer for subsequent use of the patterned light shielding layer as a mask, and the insect phase shifting layer to transfer the pattern to the phase shift layer. The main purpose of the second surname is to define the pattern of the light-shielding layer, while the second etching requires a patterned energy-sensing layer as the shadow mask. The double exposure method of the present invention can be applied to define a patterned energy sensing layer required for the second etching. First, please refer to FIG. 3A to provide a transparent substrate 3〇〇. The surface of the transparent substrate 300 has a phase shifter 302 and a shading.

1250376 V. Description of invention (9) Layer 3 04. The light-transmitting substrate 300 may be composed of, for example, quartz (Quartz), and the patterned phase-shift layer 3 0 2 may be composed of, for example, molybdenum oxynitride (M〇Si〇N), and the light-shielding layer 304 may be, for example, metal chromium (Cr). ) constitutes. Then, a first energy sensing layer 306 of a material such as an electron beam resist layer is formed on the surface of the light shielding layer 304. Then, please refer to FIG. 3B, for example, using an electron beam (e1 ec tr〇n beam) direct writing, so that the first energy sensing layer 3〇6 exhibits a pattern formed by the subsequent phase shift layer 300. Forming a patterned first energy-sensing layer 3 0 6 a 〇, and then 'clear reference 3 'Fig. 'patterning the first energy-sensing layer 3 〇 6 a as a mask, patterning the light-shielding layer 3 适当 4 by a suitable etching method For example, anisotropic dry etching, for example, using ci2 and 〇2 as the I insect engraving agent, the electro-silver engraving temperature can be between 2 〇~5 〇°c, and the electric damaging pressure can be Between 2~1 2mTorr, the power supply is about 50~2 0W, and the bias power is about 0~8 0 W. That is, the first time of making the light-shielding layer of the dimming phase-shifting reticle is to pattern the light-shielding layer 340, so that the light-shielding layer 306 has a pattern formed by the subsequent phase-displacement layer 306. A patterned light shielding layer 304a is formed. Next, referring to FIG. 3D, the patterned first energy sensing layer 306a is removed by using a suitable solution. When the material of the energy sensing layer 306a is photoresist, it may contain sulfuric acid (H2S04), hydrogen peroxide (H2 02 ), and ammonia water (NH40H). The solution is removed. Then, referring to FIG. 3E, the patterned light-shielding layer 304a is used as a mask, and the phase-shift layer 3 0 2 is patterned by a suitable etching method, for example, an anisotropic dry balance.

0503-8769TWf(Nl) ; TSMC2001-1757; felicia.ptd Page 13 1250376 V. Inventive Note (10) Engraving, until a part of the transparent substrate 300 surface is exposed, a plurality of openings are formed in the phase shift layer 3〇2 I transfers the pattern formed on the phase shift layer 3 〇 2 to the patterned light-shielding layer 3 〇 4a and the patterned phase-shift layer 3 0 2 a. C F4, % and 〇2 can be used as the insect engraving agent, the plasma temperature can be between 2 〇~, the plasma pressure can be between 2~1 2mTorr, the power supply is about 5〇~200W, the bias voltage The power is about 〇~80W. Then, please refer to FIG. 3F to form a second energy-sensing layer 308 to fully fill the surface of the light-shielding layer and partially expose the surface of the light-transmissive substrate 3 to make the sensor layer 3 0 8 Full of opening I. The preferred embodiment is to form a resist layer 308 by spin coating. Next, it is necessary to start defining the pattern predetermined by the light shielding layer. According to the double exposure of the present invention, the energy-sensing layer for patterning the light-shielding layer is defined, and the predetermined pattern of the light-shielding layer is first exposed by double exposure, and the second etching of the light-shielding layer is performed after development. Then, referring to FIG. 3G, a first exposure process S800 is performed using a first exposure machine, and one of the predetermined patterns of the light shielding layer is exposed to be framed in the second energy sensing layer 308. The top view of the second energy sensing layer 308a after the first exposure S800 is shown in Fig. 4A, and the second energy sensing layer 308a has a light shielding layer predetermined pattern outer frame 404. Fig. 3G is a cross-sectional view taken along line ZZ' in Fig. 4A. The first exposure machine must use a machine with extremely high position accuracy, such as a laser writer or an electron beam wr i ter. Here, the positional accuracy refers to the difference between the actual position of the exposed pattern and the predetermined position of the pattern.

0503-8769TWf(N1) ; TSMC200l-1757; felicia.ptd Page 14 1250376 V. Invention description αυ Next, please refer to the third drawing, and use a second exposure machine to implement a first exposure program S9 0 0, all of the area 406 surrounded by the outer frame 104 in the second energy sensing layer 308a is exposed. The complete pattern 404, 406 is exposed in the second energy sensing layer 308b after the second exposure of the MOO, as shown in FIG. 4B. The second exposure machine can be used with a general precision exposure machine, for example, a full-exposure yellow light lithography machine, which does not require high position accuracy. Since the purpose of the one-shot exposure program S 80 0 is to determine the pattern position again, the first exposure machine requires a relatively high positional accuracy. The position accuracy of the first exposure machine is higher than that of the second exposure machine. As for the positional accuracy of the second exposure machine, the requirement is not high, as long as the visibility of the frame 404 outside the predetermined pattern of the light shielding layer is greater than the positional accuracy of the exposure machine. Referring to FIG. 4A again, the width d of the outer frame 4〇4 of the predetermined pattern of the light shielding layer refers to the narrowest position width of the outer frame 410, for example, when the position accuracy of the second exposure machine is greater than 1 mm. The width d of the frame pattern 404 needs to be greater than 1 mm, preferably greater than 2 mm. The two steps of Fig. 3G and Fig. 3 are the main features of the present invention. The predetermined pattern of the light shielding layer is divided into two, one is the outer frame 404 of the pattern, and the outer frame of the predetermined pattern of the light shielding layer is first exposed by the exposure machine with high precision, so that the exposed outer frame pattern 404 falls. At the precise position, the second area of the predetermined pattern is 060, that is, the area surrounded by the outer frame of the pattern, and then the area surrounded by the exposed outer frame is entirely exposed by a general exposure machine. In this way, the second exposure does not require a fairly high positional accuracy, and a general exposure machine can be used as long as the exposure machine is exposed.

0503-8769TWf(Nl) ; TSMC2001-1757; felicia.ptd

Page 15 1250376 V. The position error of the invention description (12) does not exceed the range of the outer frame pattern, which can greatly shorten the production time. Then, referring to FIG. 3, a developing process is performed to remove the complete patterns 404, 406 in the second energy sensitive layer 308b, that is, the light shielding layer predetermined pattern outer frame 404 and the area 406 surrounded by the light shielding layer. A patterned second patterned energy sensing layer 308c is patterned. Next, referring to FIG. 3J, the second patterned energy-sensing layer 308c is patterned as a mask, and the patterned light-shielding layer 3 〇 is patterned by a suitable etching method, for example, an anisotropic dry-cut method until The exposed portion of the phase shifting layer 3 0 2a is exposed. For example, Cl2 and 〇2 are used as an etchant, and the electric charging time can be between 2. 5 and 5 (rc, the electro-convex etch pressure can be between 4 and rr , 功率 power is about 80~20 0W, the bias power is about 〇~1〇w, or the patterned light-shielding layer 3 0 4a is removed by wet I-worm method using, for example, a chemical solution including acid strontium. Finally, in the 3K diagram of Qingshen, the patterned second energy-sensing layer 308c is removed by using a suitable solution. The preferred embodiment is to contain sulfuric acid (H2S〇f), double water (H2 02 ) and ammonia water (Ν Η 4 Ο Η The solution removes the photoresist 3 〇 8 c. Referring to Figure 5, the dimming phase shift mask 502 obtained in accordance with the present invention can be used to define any of the semiconductor substrates 504 (e.g., metal layer, polysilicon gate layer). Or the dielectric layer), the desired meta-pattern is pre-defined on the mask 502 to make an exposure The light source of the machine 500 passes through the dimming phase shift mask 50 2 to expose the image of the dimming phase shift mask 5 〇 2 to the surface of the semiconductor substrate 105 formed with the energy sensing layer, and then passes through the display. The steps of the money engraving and transferring the pattern on the mask 502 to the semiconductor substrate.

1250376 V. INSTRUCTION DESCRIPTION (13) The present invention provides a method of double exposure. The first embodiment illustrates that the method of this double exposure can be applied to any field that needs to be patterned by lithography. The second embodiment describes the method of applying the double exposure to the fabrication of a photomask. The present invention is not limited to the scope of the present invention, and various modifications and refinements can be made without departing from the spirit and scope of the present invention. The scope of the invention is defined by the scope of the appended claims.

0503-8769TWf(N1) ; TSMC2001-1757;fe1icia.ptd Page 17 1250376 BRIEF DESCRIPTION OF THE DRAWINGS FIGS. 1A to 1C are diagrams showing a process profile of a preferred embodiment of the double exposure method according to the present invention. Figure. 2A to 2B are plan views showing a preferred embodiment of the double exposure method according to the present invention. 3A to 3K are cross-sectional views showing a process of a preferred embodiment of the method of fabricating a dimming displacement reticle according to the present invention. 4A to 4B are plan views showing a preferred embodiment of a method of making a dimming displacement mask according to the present invention. Fig. 5 is a view showing a lithography of the dimming type displacement reticle of the present invention. DESCRIPTION OF REFERENCE NUMERALS 100~transparent substrate; 102~energy sensing layer; 104~outer frame pattern; S500, S800~first exposure; 701~first exposure machine; S600, S900~second exposure; 702~ Double exposure machine; D ~ outer frame pattern width; 300 ~ light transmissive substrate; 302 ~ phase shift layer; 3 0 4 ~ light shielding layer; 306 ~ first energy sensing layer; 304a ~ patterned light shielding layer; Opening; 302a~ patterned phase shifting layer; 308~ second energy sensing layer, 2 04b~ second patterned light shielding layer; 1 0 6~ area surrounded by the outer frame pattern; 102a~ energy sensing after the first exposure Layer; 3 0 6a~ patterned first energy sensing layer;

〇503-8769TWf(Nl) ; TSMC2001-1757;felicia.ptd Page 18 1250376 Schematic description 102b ~ 3 0 8 a ~ 3 0 8b ~ 3 0 8c ~ layer; layer sensing energy can be after the first After the second light, the second layer, the first layer, the first layer, the first layer, the first layer, the first layer, the first layer, the first layer, the first layer

Claims (1)

12503^6 j_ Case No. He does t& 9 juvenile $ month i? 曰 revised party six, the scope of application for patents... 1 · A method of double exposure, comprising: providing an energy sensing layer on a substrate; a first exposure machine exposing an outer frame pattern to the energy sensing layer; and using a second exposure machine to expose an area surrounded by the outer frame pattern of the energy sensing layer; wherein the first exposure machine The position accuracy of the table is higher than that of the second exposure machine described above. 2. The method of double exposure according to claim 1, wherein the base semiconductor substrate or the reticle transparent substrate. 3. The method of double exposure according to claim 1, wherein the first exposure machine comprises a yellow exposure machine, a laser writer or a focusing electron beam machine. 4. The method of double exposure according to claim 1, wherein the width of the outer frame pattern is greater than the positional accuracy of the second exposure machine 0 5 · as described in claim 1 The method of secondary exposure, wherein the position accuracy of the above-mentioned second exposure machine is greater than 1 min. 6. The method of double exposure according to claim 1, wherein the outer frame pattern has a width greater than 2 mm, and the exposed portion of the second exposure machine is overlapped with the outer frame pattern by more than lmn]. 7. The method of double exposure according to claim 1, wherein the month b 1 sensing layer photoresist layer, the laser resist layer or the electron beam blocking layer 0503-8769Wl(Nl).ptc Page 20 !25〇376 -~ ------ 92134319 VI. Application Patent Scope 8 - A method for double exposure, comprising: providing an energy sensing layer; exposing an outer frame pattern to the energy sensing layer; and exposing the energy sensing The area enclosed by the frame pattern outside the layer. 9. The method of double exposure according to claim 8, wherein the energy sensing layer is a photoresist layer, a laser resist layer or an electron beam resistance, a method of sub-exposure, and a laser writing The machine or the above-mentioned outer frame pattern is exposed by a yellow light exposure machine and a focused electron beam machine. 11. The method of double exposure according to claim 8, wherein: the area surrounded by the outer frame pattern of the energy sensing layer is an L-master camera or a comprehensive exposure electron beam. exposure. Steam > 1 2 · A method for fabricating a dimming phase shift mask comprising: providing a light transmissive substrate having a phase shifting layer on the surface; forming a patterned interfacial phase shift having a predetermined pattern of phase shifting layers Layer surface; I a patterning the light-shielding layer as a mask, patterning the phase-shift layer until a portion of the surface of the light-transmitting substrate is exposed; 曰 comprehensively forming an energy-sensing layer to cover the patterned light-shielding layer and Part of exposing the surface of the transparent substrate; performing a first exposure process, exposing a predetermined pattern of the light shielding layer to the inside of the energy sensing layer; performing a second exposure process to make the above-mentioned energy sensing layer 0503-8769TWFl(Nl).ptc Page 21 1250376 Case No. 9213431 fl VI. Patent application area The area surrounded by the predetermined pattern of the light shielding layer is exposed, wherein the position accuracy of the first exposure program is higher than the above The double exposure process implements a developing process to remove the outer frame of the predetermined pattern of the light shielding layer in the energy sensing layer and the area enclosed by the light sensing layer to form a patterned layer; and A to pattern the energy sensing layer For the mask, the patterned light-shielding layer is etched until a portion of the patterned phase-shift layer surface is exposed. 13. The method of fabricating a dimming phase shift mask according to claim 12, wherein the etching the patterned light shielding layer further comprises: passing a light source through the dimming phase shift mask to The pattern of the dimming phase shift mask is transferred to the surface of a semiconductor substrate. 14. The method of fabricating a dimming phase shifting reticle of claim 12, wherein etching the patterned light-shielding layer further comprises removing the patterned energy-sensing layer. 1 5) The method of fabricating a dimming phase shift mask as described in claim 12 wherein the light transmissive substrate is made of quartz. A method of fabricating a dimming phase shift mask as described in claim 2, wherein the phase shifting layer is composed of molybdenum oxynitride (MoSiON). The method of producing a dimming phase shift mask according to claim 12, wherein the patterned light shielding layer is made of metallic chromium (Cr). 1 8 · Fabrication of dimming phase shift as described in item 12 of the patent application 0503-8769TWFl(Nl).ptc : 22nd 1250376 1st 921, 9th, 9th, 9th, 6th, the method of applying for a patent coverage of $ hood, wherein the first exposure procedure uses a laser writer or a focus The electron beam machine is carried out. ^ 1 9β The method of producing a dimming phase shift ^ f as described in claim 12, wherein the second exposure process is performed using a yellow photolithography machine or a comprehensive exposure electron beam. And /20. The method of producing a dimming phase shifting light according to claim 12, wherein the width of the outer frame pattern is greater than the positional accuracy of the second exposure process. The method of manufacturing a dimming phase shift mask as described in claim 12, wherein the positional accuracy of the second exposure procedure is greater than 1 mm ° 22 · as claimed in claim 1 The method for producing a dimming phase shift according to the item, wherein the width of the outer frame pattern is greater than 2111111, and the portion exposed by the second exposure program overlaps with the outer frame pattern by more than 1 mm. 2. A method of fabricating a dimming phase shifting reticle as described in claim 2, wherein the energy sensing layer is a laser resist layer or an electron beam resist layer. 24) A method for fabricating a dimming phase shift mask, comprising: providing a surface by sequentially stacking a patterned phase shifting layer and a patterned light shielding layer of a light transmissive substrate to expose a portion of the light transmissive substrate, wherein The patterned phase shifting layer has the same pattern as the patterned light-shielding layer; comprehensively forming an energy-sensing layer to cover the patterned light-shielding layer and partially exposed surface of the light-transmitting substrate; 0503-8769TWFl(Nl).ptc Page 23 1250376 Performing a first exposure process, exposing a predetermined pattern of the light shielding layer to the outside of the energy sensing layer; performing a second exposure process to surround the predetermined pattern of the light shielding layer in the energy sensing layer The area is exposed, wherein the positional accuracy of the first f exposure program is higher than the second exposure process; a developing process is performed to remove the outer frame of the light shielding layer pre-pattern in the energy sensing layer and the surrounding a region to form a patterned energy sensing layer; and U masking the patterned light shielding layer with the patterned energy sensing layer as described above until a portion of the patterned phase shift layer surface is exposed. The method of fabricating a dimming phase shift mask according to claim 24, wherein the etching the patterned light shielding layer further comprises: passing a light source through the dimming phase shift mask to The pattern of the dimming phase shift mask is transferred to the surface of a semiconductor substrate. The method of fabricating a dimming phase shift mask as described in claim 24, wherein patterning the above further comprises removing the patterned energy sensing layer. The method of producing a dimming phase shift mask according to claim 24, wherein the light-transmitting substrate is made of quartz. 2 8 The method for fabricating a dimming phase shift mask according to claim 24, wherein the patterned phase shift layer is molybdenum oxynitride (MoSiON), zinc oxynitride (ZnSiO), nitrogen AlSiON, Oxygen, AlSiO, AlSiN, Oxide, CrSiO 0503-8769TWFl(Nl).ptc Page 24 1250376 --- One Case No. 9213431Q _ Year i Day 倐正___ VI. Patent Application Scope of chromium oxynitride (CrSiON) or chromium hydride (CrSiN). The method of fabricating a dimming phase shift mask according to claim 24, wherein the patterned light-shielding layer is composed of metallic chromium (Cr) or a conductive light-shielding layer. A method of fabricating a dimming phase shift mask as described in claim 24, wherein the first exposure process is performed using a laser writer or a focused electron beam machine. [3] A method of fabricating a dimming phase shifting reticle as described in claim 24, wherein the second exposure process is performed using a yellow lithography machine or a fully exposed electron beam. The method of producing a dimming phase shift mask according to claim 24, wherein the width of the outer frame pattern is greater than the position accuracy of the second exposure machine. > 33·If applying The method for manufacturing a dimming phase shifting reticle according to claim 24, wherein the position accuracy of the second exposure machine is greater than 1 mm ° " the dimming described in claim 24 of the patent application scope Phase shift ^ / wherein the width of the outer frame pattern is greater than 2 mm, and the overlap between the range exposed by the above-mentioned second exposure program and the outer frame pattern is greater than 1 mm. 〇 Λ 5. Λ Application / 利 11 ® 24th household The above-mentioned energy-sensing layer is a laser resist layer or an electron beam 36. The dimming phase shift is made as described in claim 24 of the patent application. 0503-8769TWFl(Nl).ptc Page 25 ^250376 ----------- Case No. 9214331Q, the sixth month of the application, the scope and method of applying for patents, wherein the surface is sequentially stacked with the patterned phase shifting layer and the upper layer, The method for forming a substrate comprises: providing a light-transmitting substrate having a phase-displacement layer on the surface; describing: =: one of the predetermined patterns of the phase-shift layer patterning the light-shielding layer on the surface of the state shift layer; and = patterning shading The layer is a mask, and the above is patterned until the surface of the light-transmitting substrate of the exit portion. Private layer, θ correction 0503-8769TWFl(Nl).ptc Page 26