HK1073336A1 - Support for microelectronic, microoptoelectronic or micromechanical devices - Google Patents

Support for microelectronic, microoptoelectronic or micromechanical devices

Info

Publication number
HK1073336A1
HK1073336A1 HK05105829.1A HK05105829A HK1073336A1 HK 1073336 A1 HK1073336 A1 HK 1073336A1 HK 05105829 A HK05105829 A HK 05105829A HK 1073336 A1 HK1073336 A1 HK 1073336A1
Authority
HK
Hong Kong
Prior art keywords
removing material
microoptoelectronic
microelectronic
contaminant removing
micromechanical devices
Prior art date
Application number
HK05105829.1A
Other languages
English (en)
Original Assignee
Getters Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=26332783&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=HK1073336(A1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Priority claimed from IT2001MI001558A external-priority patent/ITMI20011558A1/it
Priority claimed from IT2002MI000688A external-priority patent/ITMI20020688A1/it
Application filed by Getters Spa filed Critical Getters Spa
Publication of HK1073336A1 publication Critical patent/HK1073336A1/xx

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • B81C1/00277—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS
    • B81C1/00285—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H01L23/26—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device including materials for absorbing or reacting with moisture or other undesired substances, e.g. getters
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/04—Casings
    • G01J5/041—Mountings in enclosures or in a particular environment
    • G01J5/045—Sealings; Vacuum enclosures; Encapsulated packages; Wafer bonding structures; Getter arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Micromachines (AREA)
  • Solid-Sorbent Or Filter-Aiding Compositions (AREA)
  • Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
  • Drying Of Gases (AREA)
  • Gas Separation By Absorption (AREA)
  • Chemical Vapour Deposition (AREA)
HK05105829.1A 2001-07-20 2005-07-11 Support for microelectronic, microoptoelectronic or micromechanical devices HK1073336A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
IT2001MI001558A ITMI20011558A1 (it) 2001-07-20 2001-07-20 Supporto per dispositivi microelettronici microoptoelettronici o micromeccanici
IT2002MI000688A ITMI20020688A1 (it) 2002-04-03 2002-04-03 Supporto per dispositivi microelettronici microoptoelettronici o micromeccanici
PCT/IT2002/000466 WO2003009318A2 (en) 2001-07-20 2002-07-16 Support with getter-material for microelectronic, microoptoelectronic or micromechanical device

Publications (1)

Publication Number Publication Date
HK1073336A1 true HK1073336A1 (en) 2005-09-30

Family

ID=26332783

Family Applications (1)

Application Number Title Priority Date Filing Date
HK05105829.1A HK1073336A1 (en) 2001-07-20 2005-07-11 Support for microelectronic, microoptoelectronic or micromechanical devices

Country Status (15)

Country Link
US (5) US6897551B2 (ja)
EP (1) EP1412550B1 (ja)
JP (5) JP4068555B2 (ja)
KR (1) KR100611134B1 (ja)
CN (1) CN100503879C (ja)
AT (1) ATE426688T1 (ja)
AU (1) AU2002321832A1 (ja)
CA (1) CA2450412C (ja)
DE (1) DE60231715D1 (ja)
DK (1) DK1412550T3 (ja)
ES (1) ES2321913T3 (ja)
HK (1) HK1073336A1 (ja)
MY (1) MY135763A (ja)
TW (1) TW533188B (ja)
WO (1) WO2003009318A2 (ja)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW533188B (en) * 2001-07-20 2003-05-21 Getters Spa Support for microelectronic, microoptoelectronic or micromechanical devices
TW583049B (en) * 2001-07-20 2004-04-11 Getters Spa Support with integrated deposit of gas absorbing material for manufacturing microelectronic, microoptoelectronic or micromechanical devices
JP3808092B2 (ja) * 2003-08-08 2006-08-09 松下電器産業株式会社 電子デバイスおよびその製造方法
ITMI20032208A1 (it) * 2003-11-14 2005-05-15 Getters Spa Catodo con getter integrato e bassa funzione lavoro per lampade a catodo freddo.
ITMI20032209A1 (it) * 2003-11-14 2005-05-15 Getters Spa Processo per la produzione di dispositivi che richiedono per il loro funzionamento un materiale getter non evaporabile.
US7871660B2 (en) * 2003-11-14 2011-01-18 Saes Getters, S.P.A. Preparation of getter surfaces using caustic chemicals
US8124434B2 (en) * 2004-09-27 2012-02-28 Qualcomm Mems Technologies, Inc. Method and system for packaging a display
US20060076634A1 (en) * 2004-09-27 2006-04-13 Lauren Palmateer Method and system for packaging MEMS devices with incorporated getter
ITMI20052343A1 (it) * 2005-12-06 2007-06-07 Getters Spa Processo per la produzione di dispositivi micromeccanici contenenti un materiale getter e dispositivi cosi'prodotti
JP2008135690A (ja) * 2006-10-30 2008-06-12 Denso Corp 半導体力学量センサおよびその製造方法
US7659150B1 (en) 2007-03-09 2010-02-09 Silicon Clocks, Inc. Microshells for multi-level vacuum cavities
US7595209B1 (en) 2007-03-09 2009-09-29 Silicon Clocks, Inc. Low stress thin film microshells
US7923790B1 (en) 2007-03-09 2011-04-12 Silicon Laboratories Inc. Planar microshells for vacuum encapsulated devices and damascene method of manufacture
US7736929B1 (en) 2007-03-09 2010-06-15 Silicon Clocks, Inc. Thin film microshells incorporating a getter layer
ATE528812T1 (de) * 2007-08-31 2011-10-15 Univ Denmark Tech Dtu Entfernung von verunreinigungsphasen aus elektrochemischen vorrichtungen
US8349635B1 (en) 2008-05-20 2013-01-08 Silicon Laboratories Inc. Encapsulated MEMS device and method to form the same
FR2933389B1 (fr) * 2008-07-01 2010-10-29 Commissariat Energie Atomique Structure a base d'un materiau getter suspendu
JP2010019933A (ja) * 2008-07-08 2010-01-28 Seiko Epson Corp アクチュエータ、光スキャナおよび画像形成装置
ITMI20090410A1 (it) 2009-03-18 2010-09-19 Getters Spa Leghe getter non evaporabili adatte particolarmente per l'assorbimento di idrogeno
FR2950877B1 (fr) * 2009-10-07 2012-01-13 Commissariat Energie Atomique Structure a cavite comportant une interface de collage a base de materiau getter
FR2950876B1 (fr) 2009-10-07 2012-02-10 Commissariat Energie Atomique Procede de traitement d'un materiau getter et procede d'encapsulation d'un tel materiau getter
JP5298047B2 (ja) 2010-02-26 2013-09-25 日立オートモティブシステムズ株式会社 複合センサの製造方法
FR2967150A1 (fr) 2010-11-09 2012-05-11 Commissariat Energie Atomique Procédé de réalisation de substrat a couches enfouies de matériau getter
FR2967302B1 (fr) 2010-11-09 2012-12-21 Commissariat Energie Atomique Structure d'encapsulation d'un micro-dispositif comportant un matériau getter
US8395229B2 (en) 2011-03-11 2013-03-12 Institut National D'optique MEMS-based getter microdevice
JP5541306B2 (ja) 2011-05-27 2014-07-09 株式会社デンソー 力学量センサ装置およびその製造方法
US9491802B2 (en) 2012-02-17 2016-11-08 Honeywell International Inc. On-chip alkali dispenser
DE102012207165A1 (de) 2012-04-30 2013-10-31 Robert Bosch Gmbh Mikro-elektromechanisches Bauelement, Chippackage mit mikro-elektromechanischem Bauelement und Verfahren zum Herstellen eines Chippackages mit einem mikro-elektromechanischen Bauelement
EP2736071B8 (en) 2012-11-22 2017-04-19 Tronic's Microsystems S.A. Wafer level package with getter
US9018715B2 (en) 2012-11-30 2015-04-28 Silicon Laboratories Inc. Gas-diffusion barriers for MEMS encapsulation
US10160638B2 (en) * 2013-01-04 2018-12-25 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for a semiconductor structure
US9029773B2 (en) * 2013-02-24 2015-05-12 Vlad Novotny Sealed infrared imagers
EP2960935B1 (en) * 2013-02-25 2018-04-04 KYOCERA Corporation Package for housing an electronic component and electronic device
EP2813464B1 (en) 2013-06-12 2018-08-08 Tronic's Microsystems Device with getter material
EP2813465B1 (en) 2013-06-12 2020-01-15 Tronic's Microsystems MEMS device with getter layer
JP6106331B2 (ja) 2014-03-20 2017-03-29 京セラ株式会社 ユーザ端末及び装置
US9637371B2 (en) 2014-07-25 2017-05-02 Semiconductor Manufacturing International (Shanghai) Corporation Membrane transducer structures and methods of manufacturing same using thin-film encapsulation
US11078075B2 (en) 2015-12-31 2021-08-03 Taiwan Semiconductor Manufacturing Company Ltd. Packaging method and associated packaging structure
WO2017130520A1 (ja) * 2016-01-25 2017-08-03 京セラ株式会社 計測センサ用パッケージおよび計測センサ
DE102017210459A1 (de) 2017-06-22 2018-12-27 Robert Bosch Gmbh Mikromechanische Vorrichtung mit einer ersten Kaverne und einer zweiten Kaverne
FR3072788B1 (fr) 2017-10-24 2020-05-29 Commissariat A L'energie Atomique Et Aux Energies Alternatives Source de rayonnement infrarouge modulable
FR3088319B1 (fr) 2018-11-08 2020-10-30 Ulis Boitier hermetique comportant un getter, composant optoelectronique ou dispositif mems integrant un tel boitier hermetique et procede de fabrication associe
WO2023186704A1 (en) * 2022-04-01 2023-10-05 Saes Getters S.P.A. Substrate comprising a base and an integrated getter film for manufacturing microelectronic devices

Family Cites Families (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US503261A (en) * 1893-08-15 bereuter
US3214381A (en) * 1962-12-05 1965-10-26 Bell Telephone Labor Inc Barium oxide moisture getter preparation
JPS56137658A (en) * 1980-03-31 1981-10-27 Chiyou Lsi Gijutsu Kenkyu Kumiai Semiconductor device
US4426769A (en) * 1981-08-14 1984-01-24 Amp Incorporated Moisture getter for integrated circuit packages
US5032461A (en) 1983-12-19 1991-07-16 Spectrum Control, Inc. Method of making a multi-layered article
JPS63198320A (ja) 1987-02-13 1988-08-17 Mitsubishi Electric Corp 結晶成長方法
US5083466A (en) 1988-07-14 1992-01-28 University Of Hawaii Multidimensional force sensor
US5192240A (en) 1990-02-22 1993-03-09 Seiko Epson Corporation Method of manufacturing a microelectronic vacuum device
GB9015820D0 (en) 1990-07-18 1990-09-05 Raychem Ltd Processing microchips
US5108026A (en) 1991-05-14 1992-04-28 Motorola Inc. Eutectic bonding of metal to ceramic
JP2814445B2 (ja) 1992-09-16 1998-10-22 インターナショナル・ビジネス・マシーンズ・コーポレイション 選択的な金の低温化学蒸着
KR0139489B1 (ko) 1993-07-08 1998-06-01 호소야 레이지 전계방출형 표시장치
JPH09506712A (ja) * 1993-12-13 1997-06-30 ハネウエル・インコーポレーテッド 赤外線デバイス用集積シリコン真空マイクロパッケージ
JP3456257B2 (ja) * 1994-05-27 2003-10-14 株式会社デンソー 電子素子用パッケージ
US5453659A (en) * 1994-06-10 1995-09-26 Texas Instruments Incorporated Anode plate for flat panel display having integrated getter
JPH0878569A (ja) * 1994-09-07 1996-03-22 Nippondenso Co Ltd 電子部品用パッケージ
US5599749A (en) 1994-10-21 1997-02-04 Yamaha Corporation Manufacture of micro electron emitter
CA2162095A1 (en) 1994-12-27 1996-06-28 Jeffery Alan Demeritt Getter housing for electronic packages
US5668018A (en) 1995-06-07 1997-09-16 International Business Machines Corporation Method for defining a region on a wall of a semiconductor structure
US5614785A (en) 1995-09-28 1997-03-25 Texas Instruments Incorporated Anode plate for flat panel display having silicon getter
JPH09127151A (ja) * 1995-11-01 1997-05-16 Murata Mfg Co Ltd 加速度センサ
US5837935A (en) * 1996-02-26 1998-11-17 Ford Motor Company Hermetic seal for an electronic component having a secondary chamber
JPH09306920A (ja) 1996-05-20 1997-11-28 Hitachi Ltd 半導体集積回路装置およびその製造方法
JPH09318656A (ja) * 1996-05-31 1997-12-12 Hitachi Ltd 静電容量式加速度センサ
US5760433A (en) 1996-05-31 1998-06-02 Hughes Electronics In situ reactive layers for protection of ferroelectric integrated circuits
IT1283484B1 (it) * 1996-07-23 1998-04-21 Getters Spa Metodo per la produzione di strati sottili supportati di materiale getter non-evaporabile e dispositivi getter cosi' prodotti
US6673400B1 (en) * 1996-10-15 2004-01-06 Texas Instruments Incorporated Hydrogen gettering system
JPH10176768A (ja) 1996-11-27 1998-06-30 Xerox Corp マイクロデバイス支持システム及びマイクロデバイスのアレイ
US5837934A (en) 1996-12-02 1998-11-17 Midway Games Inc. Shock insulated container for hard disk drives
JPH10188460A (ja) 1996-12-25 1998-07-21 Sony Corp 光ディスク装置及び光ディスク記録媒体
IT1290451B1 (it) 1997-04-03 1998-12-03 Getters Spa Leghe getter non evaporabili
US5921461A (en) * 1997-06-11 1999-07-13 Raytheon Company Vacuum package having vacuum-deposited local getter and its preparation
US5951750A (en) * 1997-06-19 1999-09-14 Engelhard Corporation Anti-yellowing polyolefin compositions containing pearlescent pigment to prevent yellowing and method therefore
JPH1140761A (ja) 1997-07-23 1999-02-12 Fujitsu Ltd 半導体装置及びその製造方法
US5961362A (en) 1997-09-09 1999-10-05 Motorola, Inc. Method for in situ cleaning of electron emitters in a field emission device
US5866978A (en) 1997-09-30 1999-02-02 Fed Corporation Matrix getter for residual gas in vacuum sealed panels
US6359333B1 (en) * 1998-03-31 2002-03-19 Honeywell International Inc. Wafer-pair having deposited layer sealed chambers
US6499354B1 (en) * 1998-05-04 2002-12-31 Integrated Sensing Systems (Issys), Inc. Methods for prevention, reduction, and elimination of outgassing and trapped gases in micromachined devices
US6843936B1 (en) 1998-10-22 2005-01-18 Texas Instruments Incorporated Getter for enhanced micromechanical device performance
JP3677409B2 (ja) * 1999-03-05 2005-08-03 京セラ株式会社 弾性表面波装置及びその製造方法
JP2000277525A (ja) * 1999-03-26 2000-10-06 Toshiba Ceramics Co Ltd 半導体用シリコンウエハ及びその製造方法
IT1312248B1 (it) 1999-04-12 2002-04-09 Getters Spa Metodo per aumentare la produttivita' di processi di deposizione distrati sottili su un substrato e dispositivi getter per la
US6449354B1 (en) * 1999-06-08 2002-09-10 Nortel Networks Limited Communication system, article and method of configuring and establishing a connection therein
US6265246B1 (en) * 1999-07-23 2001-07-24 Agilent Technologies, Inc. Microcap wafer-level package
US6228675B1 (en) * 1999-07-23 2001-05-08 Agilent Technologies, Inc. Microcap wafer-level package with vias
US6400009B1 (en) * 1999-10-15 2002-06-04 Lucent Technologies Inc. Hermatic firewall for MEMS packaging in flip-chip bonded geometry
GB9927806D0 (en) 1999-11-24 2000-01-26 Isis Innovation Genetic indicators of tobacco consumption
US6477901B1 (en) 1999-12-21 2002-11-12 Integrated Sensing Systems, Inc. Micromachined fluidic apparatus
JP2001196486A (ja) * 2000-01-07 2001-07-19 Murata Mfg Co Ltd 減圧パッケージ構造およびその製造方法
US6410847B1 (en) * 2000-07-25 2002-06-25 Trw Inc. Packaged electronic system having selectively plated microwave absorbing cover
CN1127138C (zh) * 2000-09-15 2003-11-05 北京大学 一种全金属低温微机电系统真空封装外壳以及封装方法
US6534850B2 (en) 2001-04-16 2003-03-18 Hewlett-Packard Company Electronic device sealed under vacuum containing a getter and method of operation
TW583049B (en) * 2001-07-20 2004-04-11 Getters Spa Support with integrated deposit of gas absorbing material for manufacturing microelectronic, microoptoelectronic or micromechanical devices
TW533188B (en) * 2001-07-20 2003-05-21 Getters Spa Support for microelectronic, microoptoelectronic or micromechanical devices
EP1310380A1 (en) 2001-11-07 2003-05-14 SensoNor asa A micro-mechanical device and method for producing the same
US6923625B2 (en) 2002-01-07 2005-08-02 Integrated Sensing Systems, Inc. Method of forming a reactive material and article formed thereby

Also Published As

Publication number Publication date
US7534658B2 (en) 2009-05-19
US20030052392A1 (en) 2003-03-20
DE60231715D1 (de) 2009-05-07
WO2003009318A2 (en) 2003-01-30
USRE44255E1 (en) 2013-06-04
EP1412550A2 (en) 2004-04-28
EP1412550B1 (en) 2009-03-25
JP2005510041A (ja) 2005-04-14
CN1599806A (zh) 2005-03-23
WO2003009318A8 (en) 2003-04-10
US6897551B2 (en) 2005-05-24
US20050156302A1 (en) 2005-07-21
ES2321913T3 (es) 2009-06-15
TW533188B (en) 2003-05-21
JP2012051106A (ja) 2012-03-15
WO2003009318A3 (en) 2003-09-25
CA2450412C (en) 2008-01-22
CA2450412A1 (en) 2003-01-30
KR20040030828A (ko) 2004-04-09
US20080073766A1 (en) 2008-03-27
JP6140259B2 (ja) 2017-05-31
KR100611134B1 (ko) 2006-08-10
US20050158914A1 (en) 2005-07-21
MY135763A (en) 2008-06-30
US20030230793A9 (en) 2003-12-18
US7808091B2 (en) 2010-10-05
JP4068555B2 (ja) 2008-03-26
CN100503879C (zh) 2009-06-24
AU2002321832A1 (en) 2003-03-03
JP2008118147A (ja) 2008-05-22
JP2014058040A (ja) 2014-04-03
US7566957B2 (en) 2009-07-28
ATE426688T1 (de) 2009-04-15
DK1412550T3 (da) 2009-06-02
JP2016047595A (ja) 2016-04-07

Similar Documents

Publication Publication Date Title
HK1073336A1 (en) Support for microelectronic, microoptoelectronic or micromechanical devices
HK1076539A1 (en) support with integrated deposit of gas absorbing material for manufacturing microelectronic, microoptoelectronic or micromechanical devices
DE60234238D1 (de) Kopfschutz-Airbagvorrichtung
DE60238888D1 (de) Knieschutz-Airbagvorrichtung
DE60236876D1 (de) Gasgenerator
DE60207851D1 (de) Aerostatische rotorstütze
DE60228780D1 (de) Halbleiterbauelement, zugehöriges Herstellungsverfahren und Flüssigkeitsstrahl-Vorrichtung
DE60209578D1 (de) Gassackvorrichtung
DE60205797D1 (de) Gassack-Vorrichtung
DE60206976D1 (de) Tragbares Telefon , Diffusor und Beleuchtungseinrichtung dafür
DE60215515D1 (de) Aufblasvorrichtung für airbag
DE60227105D1 (de) Gaserzeuger für airbag
AU2003293308A1 (en) Masks, lithography device and semiconductor component
DE50200549D1 (de) Airbagvorrichtung
DE60226610D1 (de) Flüssigkeits-gas-kontakt-vorrichtung
FR2820180B1 (fr) Ressort pneumatique
ITTO20010294A0 (it) Dispositivo per il posizionamento di un organo operatore, ed apparecchiatura saldatrice che ne fa uso.
WO2006111686A3 (fr) Gel pour la separation et/ou la purification de gaz et dispositifs associes
BR0101442B1 (pt) dispositivo para recuperação de um gás inerte.
ITMI20011558A0 (it) Supporto per dispositivi microelettronici microoptoelettronici o micromeccanici
ITMI20011225A0 (it) Accendigas con dispositivo di sicurezza integrato
ITMI20020688A0 (it) Supporto per dispositivi microelettronici microoptoelettronici o micromeccanici
ITTO20020921A1 (it) Dispositivo accendigas elettrico.
NO20012359L (no) Anordning for gassrensing
DE60105541D1 (de) Anlage zum Verdichten von verunreinigtem Gas

Legal Events

Date Code Title Description
PE Patent expired

Effective date: 20220715