JP3808092B2 - 電子デバイスおよびその製造方法 - Google Patents
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Images
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
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- G—PHYSICS
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- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/0215—Compact construction
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/0225—Shape of the cavity itself or of elements contained in or suspended over the cavity
- G01J5/023—Particular leg structure or construction or shape; Nanotubes
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/0225—Shape of the cavity itself or of elements contained in or suspended over the cavity
- G01J5/024—Special manufacturing steps or sacrificial layers or layer structures
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
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- G—PHYSICS
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- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
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- G01J5/02—Constructional details
- G01J5/06—Arrangements for eliminating effects of disturbing radiation; Arrangements for compensating changes in sensitivity
- G01J5/061—Arrangements for eliminating effects of disturbing radiation; Arrangements for compensating changes in sensitivity by controlling the temperature of the apparatus or parts thereof, e.g. using cooling means or thermostats
Description
を含む。
を含む。
以下、図面を参照しながら、本発明による第1の実施形態を説明する。
次に、本実施形態におけるマイクロ真空パッケージの内部圧力(真空度)検出方法の一例を説明する。
(T−T0)×(gS+gA)=Q
gA=Q/(T−T0)−gS
以下、本発明による第2の実施形態を説明する。
図26を参照しながら、本発明による第3の実施形態を説明する。図26は、本実施形態の電子デバイスにおける1つのマイクロ真空パッケージ部分の断面構成を示している。現実には、1つの基板上に多数の空洞が形成されているが、簡単のため、図面では代表的な1個の空洞のみが示されている。
図31を参照しながら、本発明による第3の実施形態を説明する。本実施形態の電子デバイスは、赤外線エリアセンサを備えたカメラ(撮像装置)である。
各赤外線検出部が精度よく動作するためには、その赤外線検出部が封入されている空間の真空度が重要である。図33は、赤外線検出部の感度と雰囲気の真空度との関係を示したグラフ図である。
抵抗体を発熱させることによって昇温させた後、所定の時間だけ放置すると、抵抗体の温度は再び低下し、もとの温度に近づいてゆく。この温度の変化を検知することにより、圧力を測定することができる。
ΔT=P0exp(jωt)/((G1 +G2 )+jωC)
次に、図36に示す測定方法によって得られる出力信号ScoおよびSreを、信号処理回路60において処理する方法について、図36を参照しながら述べる。図36は、真空度判定のための温度測定時において、赤外線検出部の出力信号を処理し、欠陥を補完する回路を示す図である。
次に、本実施形態の電子デバイスをカメラに使用する場合に、欠陥を有する赤外線検出部の補完を行なう方法について、図36を参照しながら説明する。
以下に、本実施形態のマイクロ真空パッケージの配置について、図38を参照しながら説明する。図38は、図32に示すセルアレイにおけるマイクロ真空パッケージの配置を模式的に示す図である。
Claims (15)
- 基板と、前記基板上に配列された複数の赤外線検出部とを備えた電子デバイスであって、
前記複数の赤外線検出部の各々は、
前記基板上に設けられ、減圧された空洞を形成する空洞壁部と、
前記空洞内に配置され、周囲の物質を吸着する機能を有するゲッタリング薄膜と、
少なくとも一部が前記空洞内に配置され、前記ゲッタリング薄膜を発熱によって活性化する機能および前記空洞内の温度を検出する機能を有する活性化部と、
を有しており、
前記温度検出結果により、各空洞内の真空度を検出し、前記真空度の検出結果に基づいて複数の空洞の一部または全部の空洞において選択的に前記ゲッタリング薄膜の活性化を行なう制御部を更に備えている電子デバイス。 - 前記ゲッタリング薄膜は前記活性化部の下方に配置されている請求項1に記載の電子デバイス。
- 前記活性化部は、電流によって熱を発生する熱発生部と、前記熱発生部に電流を供給する導電配線とを有し、
前記熱発生部または前記導電配線に接触する部分は、融点が活性化温度よりも高い材料から形成されている、請求項1に記載の電子デバイス。 - 前記ゲッタリング薄膜は、パターニングされた堆積物の膜である、請求項1に記載の電子デバイス。
- 前記ゲッタリング薄膜の厚さは100μm以下である、請求項4に記載の電子デバイス。
- 前記活性化部は、発熱および/または吸熱を行い、そのときの温度を検出することによって前記空洞内の真空度を検出する、請求項1に記載の電子デバイス。
- 前記ゲッタリング薄膜は、1mm×1mmの矩形領域内に収まる平面サイズを有している、請求項5に記載の電子デバイス。
- 前記空洞壁部と前記熱発生部との間の断熱特性を向上する機能を有する断熱部を有する請求項1に記載の電子デバイス。
- 前記熱発生部は、電気抵抗によるジュール熱によって発熱する請求項3に記載の電子デバイス。
- 前記熱発生部はペルチェ素子である請求項3に記載の電子デバイス。
- 前記電子デバイスは、前記基板上に形成された少なくとも1つの赤外線検出部および少なくとも1つの可視光検出部を有しており、
前記空洞は、前記赤外線検出部の少なくとも一部を取り囲み、かつ、前記可視光検出部の一部を囲まない形状を有している請求項1に記載の電子デバイス。 - 前記基板上に形成された前記赤外線検出部および可視光線検出部の数は、それぞれ、複数であり、前記基板上に配列されている請求項11に記載の電子デバイス。
- 前記活性化部は、抵抗変化材料からなる部分を有し、前記抵抗変化材料に電流を流したときの抵抗値によって前記空洞内の温度を検出する、請求項1に記載の電子デバイス。
- 前記活性化部は、熱電対または複数の熱電対が直列に接続されたサーモパイルからなる部分を有し、前記熱電対または前記サーモパイルの熱起電力によって前記空洞内の温度を検出する、請求項1に記載の電子デバイス。
- 前記活性化部は、前記空洞内の温度を検出することによって赤外線入射量を検出する、請求項1に記載の電子デバイス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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JP2003289887 | 2003-08-08 | ||
JP2003289887 | 2003-08-08 | ||
PCT/JP2004/011425 WO2005015637A1 (ja) | 2003-08-08 | 2004-08-03 | 電子デバイスおよびその製造方法 |
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JP3808092B2 true JP3808092B2 (ja) | 2006-08-09 |
JPWO2005015637A1 JPWO2005015637A1 (ja) | 2006-10-05 |
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JP2005512983A Expired - Fee Related JP3808092B2 (ja) | 2003-08-08 | 2004-08-03 | 電子デバイスおよびその製造方法 |
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US (1) | US7309865B2 (ja) |
JP (1) | JP3808092B2 (ja) |
WO (1) | WO2005015637A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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EP1988575A2 (en) | 2007-03-26 | 2008-11-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
Families Citing this family (38)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4784399B2 (ja) * | 2006-05-29 | 2011-10-05 | 日産自動車株式会社 | 赤外線センサおよびその製造方法 |
US8653612B2 (en) * | 2006-08-25 | 2014-02-18 | Sanyo Semiconductor Co., Ltd. | Semiconductor device |
US9034729B2 (en) * | 2006-08-25 | 2015-05-19 | Semiconductor Components Industries, Llc | Semiconductor device and method of manufacturing the same |
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US20060131501A1 (en) | 2006-06-22 |
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