DK1412550T3 - Understötning med gettermateriale til mikromekanisk anordning - Google Patents
Understötning med gettermateriale til mikromekanisk anordningInfo
- Publication number
- DK1412550T3 DK1412550T3 DK02755628T DK02755628T DK1412550T3 DK 1412550 T3 DK1412550 T3 DK 1412550T3 DK 02755628 T DK02755628 T DK 02755628T DK 02755628 T DK02755628 T DK 02755628T DK 1412550 T3 DK1412550 T3 DK 1412550T3
- Authority
- DK
- Denmark
- Prior art keywords
- removing material
- contaminant removing
- contaminant
- support
- getter material
- Prior art date
Links
- 239000000463 material Substances 0.000 title abstract 5
- 239000000356 contaminant Substances 0.000 abstract 5
- 238000010521 absorption reaction Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000004377 microelectronic Methods 0.000 abstract 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00277—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS
- B81C1/00285—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
- H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
- H01L23/26—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device including materials for absorbing or reacting with moisture or other undesired substances, e.g. getters
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/04—Casings
- G01J5/041—Mountings in enclosures or in a particular environment
- G01J5/045—Sealings; Vacuum enclosures; Encapsulated packages; Wafer bonding structures; Getter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Electromagnetism (AREA)
- Micromachines (AREA)
- Solid-Sorbent Or Filter-Aiding Compositions (AREA)
- Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
- Drying Of Gases (AREA)
- Gas Separation By Absorption (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT2001MI001558A ITMI20011558A1 (it) | 2001-07-20 | 2001-07-20 | Supporto per dispositivi microelettronici microoptoelettronici o micromeccanici |
IT2002MI000688A ITMI20020688A1 (it) | 2002-04-03 | 2002-04-03 | Supporto per dispositivi microelettronici microoptoelettronici o micromeccanici |
PCT/IT2002/000466 WO2003009318A2 (en) | 2001-07-20 | 2002-07-16 | Support with getter-material for microelectronic, microoptoelectronic or micromechanical device |
Publications (1)
Publication Number | Publication Date |
---|---|
DK1412550T3 true DK1412550T3 (da) | 2009-06-02 |
Family
ID=26332783
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DK02755628T DK1412550T3 (da) | 2001-07-20 | 2002-07-16 | Understötning med gettermateriale til mikromekanisk anordning |
Country Status (15)
Country | Link |
---|---|
US (5) | US6897551B2 (da) |
EP (1) | EP1412550B1 (da) |
JP (5) | JP4068555B2 (da) |
KR (1) | KR100611134B1 (da) |
CN (1) | CN100503879C (da) |
AT (1) | ATE426688T1 (da) |
AU (1) | AU2002321832A1 (da) |
CA (1) | CA2450412C (da) |
DE (1) | DE60231715D1 (da) |
DK (1) | DK1412550T3 (da) |
ES (1) | ES2321913T3 (da) |
HK (1) | HK1073336A1 (da) |
MY (1) | MY135763A (da) |
TW (1) | TW533188B (da) |
WO (1) | WO2003009318A2 (da) |
Families Citing this family (43)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW533188B (en) * | 2001-07-20 | 2003-05-21 | Getters Spa | Support for microelectronic, microoptoelectronic or micromechanical devices |
TW583049B (en) * | 2001-07-20 | 2004-04-11 | Getters Spa | Support with integrated deposit of gas absorbing material for manufacturing microelectronic, microoptoelectronic or micromechanical devices |
JP3808092B2 (ja) * | 2003-08-08 | 2006-08-09 | 松下電器産業株式会社 | 電子デバイスおよびその製造方法 |
ITMI20032208A1 (it) * | 2003-11-14 | 2005-05-15 | Getters Spa | Catodo con getter integrato e bassa funzione lavoro per lampade a catodo freddo. |
ITMI20032209A1 (it) * | 2003-11-14 | 2005-05-15 | Getters Spa | Processo per la produzione di dispositivi che richiedono per il loro funzionamento un materiale getter non evaporabile. |
US7871660B2 (en) * | 2003-11-14 | 2011-01-18 | Saes Getters, S.P.A. | Preparation of getter surfaces using caustic chemicals |
US8124434B2 (en) * | 2004-09-27 | 2012-02-28 | Qualcomm Mems Technologies, Inc. | Method and system for packaging a display |
US20060076634A1 (en) * | 2004-09-27 | 2006-04-13 | Lauren Palmateer | Method and system for packaging MEMS devices with incorporated getter |
ITMI20052343A1 (it) * | 2005-12-06 | 2007-06-07 | Getters Spa | Processo per la produzione di dispositivi micromeccanici contenenti un materiale getter e dispositivi cosi'prodotti |
JP2008135690A (ja) * | 2006-10-30 | 2008-06-12 | Denso Corp | 半導体力学量センサおよびその製造方法 |
US7659150B1 (en) | 2007-03-09 | 2010-02-09 | Silicon Clocks, Inc. | Microshells for multi-level vacuum cavities |
US7595209B1 (en) | 2007-03-09 | 2009-09-29 | Silicon Clocks, Inc. | Low stress thin film microshells |
US7923790B1 (en) | 2007-03-09 | 2011-04-12 | Silicon Laboratories Inc. | Planar microshells for vacuum encapsulated devices and damascene method of manufacture |
US7736929B1 (en) | 2007-03-09 | 2010-06-15 | Silicon Clocks, Inc. | Thin film microshells incorporating a getter layer |
ATE528812T1 (de) * | 2007-08-31 | 2011-10-15 | Univ Denmark Tech Dtu | Entfernung von verunreinigungsphasen aus elektrochemischen vorrichtungen |
US8349635B1 (en) | 2008-05-20 | 2013-01-08 | Silicon Laboratories Inc. | Encapsulated MEMS device and method to form the same |
FR2933389B1 (fr) * | 2008-07-01 | 2010-10-29 | Commissariat Energie Atomique | Structure a base d'un materiau getter suspendu |
JP2010019933A (ja) * | 2008-07-08 | 2010-01-28 | Seiko Epson Corp | アクチュエータ、光スキャナおよび画像形成装置 |
ITMI20090410A1 (it) | 2009-03-18 | 2010-09-19 | Getters Spa | Leghe getter non evaporabili adatte particolarmente per l'assorbimento di idrogeno |
FR2950877B1 (fr) * | 2009-10-07 | 2012-01-13 | Commissariat Energie Atomique | Structure a cavite comportant une interface de collage a base de materiau getter |
FR2950876B1 (fr) | 2009-10-07 | 2012-02-10 | Commissariat Energie Atomique | Procede de traitement d'un materiau getter et procede d'encapsulation d'un tel materiau getter |
JP5298047B2 (ja) | 2010-02-26 | 2013-09-25 | 日立オートモティブシステムズ株式会社 | 複合センサの製造方法 |
FR2967150A1 (fr) | 2010-11-09 | 2012-05-11 | Commissariat Energie Atomique | Procédé de réalisation de substrat a couches enfouies de matériau getter |
FR2967302B1 (fr) | 2010-11-09 | 2012-12-21 | Commissariat Energie Atomique | Structure d'encapsulation d'un micro-dispositif comportant un matériau getter |
US8395229B2 (en) | 2011-03-11 | 2013-03-12 | Institut National D'optique | MEMS-based getter microdevice |
JP5541306B2 (ja) | 2011-05-27 | 2014-07-09 | 株式会社デンソー | 力学量センサ装置およびその製造方法 |
US9491802B2 (en) | 2012-02-17 | 2016-11-08 | Honeywell International Inc. | On-chip alkali dispenser |
DE102012207165A1 (de) | 2012-04-30 | 2013-10-31 | Robert Bosch Gmbh | Mikro-elektromechanisches Bauelement, Chippackage mit mikro-elektromechanischem Bauelement und Verfahren zum Herstellen eines Chippackages mit einem mikro-elektromechanischen Bauelement |
EP2736071B8 (en) | 2012-11-22 | 2017-04-19 | Tronic's Microsystems S.A. | Wafer level package with getter |
US9018715B2 (en) | 2012-11-30 | 2015-04-28 | Silicon Laboratories Inc. | Gas-diffusion barriers for MEMS encapsulation |
US10160638B2 (en) * | 2013-01-04 | 2018-12-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and apparatus for a semiconductor structure |
US9029773B2 (en) * | 2013-02-24 | 2015-05-12 | Vlad Novotny | Sealed infrared imagers |
EP2960935B1 (en) * | 2013-02-25 | 2018-04-04 | KYOCERA Corporation | Package for housing an electronic component and electronic device |
EP2813464B1 (en) | 2013-06-12 | 2018-08-08 | Tronic's Microsystems | Device with getter material |
EP2813465B1 (en) | 2013-06-12 | 2020-01-15 | Tronic's Microsystems | MEMS device with getter layer |
JP6106331B2 (ja) | 2014-03-20 | 2017-03-29 | 京セラ株式会社 | ユーザ端末及び装置 |
US9637371B2 (en) | 2014-07-25 | 2017-05-02 | Semiconductor Manufacturing International (Shanghai) Corporation | Membrane transducer structures and methods of manufacturing same using thin-film encapsulation |
US11078075B2 (en) | 2015-12-31 | 2021-08-03 | Taiwan Semiconductor Manufacturing Company Ltd. | Packaging method and associated packaging structure |
WO2017130520A1 (ja) * | 2016-01-25 | 2017-08-03 | 京セラ株式会社 | 計測センサ用パッケージおよび計測センサ |
DE102017210459A1 (de) | 2017-06-22 | 2018-12-27 | Robert Bosch Gmbh | Mikromechanische Vorrichtung mit einer ersten Kaverne und einer zweiten Kaverne |
FR3072788B1 (fr) | 2017-10-24 | 2020-05-29 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Source de rayonnement infrarouge modulable |
FR3088319B1 (fr) | 2018-11-08 | 2020-10-30 | Ulis | Boitier hermetique comportant un getter, composant optoelectronique ou dispositif mems integrant un tel boitier hermetique et procede de fabrication associe |
WO2023186704A1 (en) * | 2022-04-01 | 2023-10-05 | Saes Getters S.P.A. | Substrate comprising a base and an integrated getter film for manufacturing microelectronic devices |
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TW583049B (en) * | 2001-07-20 | 2004-04-11 | Getters Spa | Support with integrated deposit of gas absorbing material for manufacturing microelectronic, microoptoelectronic or micromechanical devices |
TW533188B (en) * | 2001-07-20 | 2003-05-21 | Getters Spa | Support for microelectronic, microoptoelectronic or micromechanical devices |
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-
2002
- 2002-07-12 TW TW091115738A patent/TW533188B/zh not_active IP Right Cessation
- 2002-07-16 AU AU2002321832A patent/AU2002321832A1/en not_active Abandoned
- 2002-07-16 DE DE60231715T patent/DE60231715D1/de not_active Expired - Lifetime
- 2002-07-16 KR KR1020047000915A patent/KR100611134B1/ko active IP Right Grant
- 2002-07-16 ES ES02755628T patent/ES2321913T3/es not_active Expired - Lifetime
- 2002-07-16 WO PCT/IT2002/000466 patent/WO2003009318A2/en active Application Filing
- 2002-07-16 DK DK02755628T patent/DK1412550T3/da active
- 2002-07-16 CA CA002450412A patent/CA2450412C/en not_active Expired - Lifetime
- 2002-07-16 CN CNB028147103A patent/CN100503879C/zh not_active Expired - Lifetime
- 2002-07-16 AT AT02755628T patent/ATE426688T1/de active
- 2002-07-16 JP JP2003514572A patent/JP4068555B2/ja not_active Expired - Lifetime
- 2002-07-16 EP EP02755628A patent/EP1412550B1/en not_active Expired - Lifetime
- 2002-07-18 MY MYPI20022726A patent/MY135763A/en unknown
- 2002-07-19 US US10/201,657 patent/US6897551B2/en not_active Ceased
-
2005
- 2005-02-25 US US11/067,526 patent/US7534658B2/en not_active Expired - Lifetime
- 2005-03-01 US US11/070,728 patent/US7808091B2/en not_active Expired - Fee Related
- 2005-07-11 HK HK05105829.1A patent/HK1073336A1/xx not_active IP Right Cessation
-
2007
- 2007-10-31 US US11/982,279 patent/US7566957B2/en not_active Expired - Lifetime
- 2007-11-14 JP JP2007295918A patent/JP2008118147A/ja not_active Withdrawn
-
2008
- 2008-04-24 US US12/150,287 patent/USRE44255E1/en not_active Expired - Lifetime
-
2011
- 2011-10-19 JP JP2011229923A patent/JP2012051106A/ja not_active Withdrawn
-
2013
- 2013-12-13 JP JP2013257638A patent/JP2014058040A/ja active Pending
-
2015
- 2015-12-09 JP JP2015240035A patent/JP6140259B2/ja not_active Expired - Lifetime
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