HK1036699A1 - Surface acoustic wave devices and method for manufacturing the same - Google Patents
Surface acoustic wave devices and method for manufacturing the sameInfo
- Publication number
- HK1036699A1 HK1036699A1 HK01107560A HK01107560A HK1036699A1 HK 1036699 A1 HK1036699 A1 HK 1036699A1 HK 01107560 A HK01107560 A HK 01107560A HK 01107560 A HK01107560 A HK 01107560A HK 1036699 A1 HK1036699 A1 HK 1036699A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- manufacturing
- same
- acoustic wave
- surface acoustic
- wave devices
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 238000010897 surface acoustic wave method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
- H03H9/1092—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a cover cap mounted on an element forming part of the surface acoustic wave [SAW] device on the side of the IDT's
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
- H03H3/10—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves for obtaining desired frequency or temperature coefficient
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02637—Details concerning reflective or coupling arrays
- H03H9/02779—Continuous surface reflective arrays
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/66—Phase shifters
- H03H9/68—Phase shifters using surface acoustic waves
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9816661A FR2788176B1 (fr) | 1998-12-30 | 1998-12-30 | Dispositif a ondes acoustiques guidees dans une fine couche de materiau piezo-electrique collee par une colle moleculaire sur un substrat porteur et procede de fabrication |
PCT/FR1999/003239 WO2000041299A1 (fr) | 1998-12-30 | 1999-12-21 | Dispositif a ondes acoustiques guidees dans une fine couche de materiau piezo-electrique collee par une colle moleculaire sur un substrat porteur et procede de fabrication |
Publications (1)
Publication Number | Publication Date |
---|---|
HK1036699A1 true HK1036699A1 (en) | 2002-01-11 |
Family
ID=9534704
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK01107560A HK1036699A1 (en) | 1998-12-30 | 2001-10-30 | Surface acoustic wave devices and method for manufacturing the same |
Country Status (10)
Country | Link |
---|---|
US (1) | US6445265B1 (ja) |
EP (1) | EP1060562B1 (ja) |
JP (1) | JP2002534886A (ja) |
KR (1) | KR20010083777A (ja) |
CN (1) | CN1129230C (ja) |
CA (1) | CA2321905A1 (ja) |
DE (1) | DE69923667T2 (ja) |
FR (1) | FR2788176B1 (ja) |
HK (1) | HK1036699A1 (ja) |
WO (1) | WO2000041299A1 (ja) |
Families Citing this family (80)
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GB0016861D0 (en) * | 2000-07-11 | 2000-08-30 | Univ Cranfield | Improvements in or relating to filters |
JP2002122614A (ja) * | 2000-10-12 | 2002-04-26 | Murata Mfg Co Ltd | 加速度センサ |
EP1360762A1 (en) * | 2001-01-18 | 2003-11-12 | Infineon Technologies AG | Filter devices and method for fabricating filter devices |
JP2003017967A (ja) * | 2001-06-29 | 2003-01-17 | Toshiba Corp | 弾性表面波素子及びその製造方法 |
US6621379B1 (en) * | 2001-11-29 | 2003-09-16 | Clarisay, Incorporated | Hermetic package for surface acoustic wave device and method of manufacturing the same |
US6767749B2 (en) * | 2002-04-22 | 2004-07-27 | The United States Of America As Represented By The Secretary Of The Navy | Method for making piezoelectric resonator and surface acoustic wave device using hydrogen implant layer splitting |
KR100431767B1 (ko) * | 2002-06-08 | 2004-05-17 | 엘지이노텍 주식회사 | 슬릿탄성파를 이용한 압력 센서 |
JP2004129222A (ja) * | 2002-07-31 | 2004-04-22 | Murata Mfg Co Ltd | 圧電部品およびその製造方法 |
JP3892370B2 (ja) * | 2002-09-04 | 2007-03-14 | 富士通メディアデバイス株式会社 | 弾性表面波素子、フィルタ装置及びその製造方法 |
JP2004186868A (ja) * | 2002-12-02 | 2004-07-02 | Fujitsu Media Device Kk | 弾性表面波素子、それを有する送信フィルタ及び受信フィルタ、並びにそれらを有するデュプレクサ |
AU2003303406A1 (en) * | 2002-12-24 | 2004-07-22 | Fondation Cafi | Ion beam doped lithium tantalate or similar compounds |
JP2004304622A (ja) * | 2003-03-31 | 2004-10-28 | Fujitsu Media Device Kk | 弾性表面波デバイス及びその製造方法 |
JP2004336503A (ja) | 2003-05-09 | 2004-11-25 | Fujitsu Media Device Kk | 弾性表面波素子及びその製造方法 |
JP3774782B2 (ja) * | 2003-05-14 | 2006-05-17 | 富士通メディアデバイス株式会社 | 弾性表面波素子の製造方法 |
DE10325281B4 (de) * | 2003-06-04 | 2018-05-17 | Snaptrack, Inc. | Elektroakustisches Bauelement und Verfahren zur Herstellung |
DE10331322A1 (de) * | 2003-07-10 | 2005-02-03 | Epcos Ag | Elektronisches Bauelement und Verfahren zur Herstellung |
US7230512B1 (en) * | 2003-08-19 | 2007-06-12 | Triquint, Inc. | Wafer-level surface acoustic wave filter package with temperature-compensating characteristics |
JP4230347B2 (ja) * | 2003-12-19 | 2009-02-25 | 富士通メディアデバイス株式会社 | 弾性表面波フィルタ |
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JP4627269B2 (ja) * | 2006-02-24 | 2011-02-09 | 日本碍子株式会社 | 圧電薄膜デバイスの製造方法 |
FR2922696B1 (fr) * | 2007-10-22 | 2010-03-12 | St Microelectronics Sa | Resonateur a ondes de lamb |
KR101196990B1 (ko) * | 2007-12-25 | 2012-11-05 | 가부시키가이샤 무라타 세이사쿠쇼 | 복합 압전 기판의 제조방법 |
JP4636292B2 (ja) * | 2008-08-27 | 2011-02-23 | 株式会社村田製作所 | 電子部品及び電子部品の製造方法 |
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JP4821834B2 (ja) * | 2008-10-31 | 2011-11-24 | 株式会社村田製作所 | 圧電性複合基板の製造方法 |
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JP2010161671A (ja) * | 2009-01-09 | 2010-07-22 | Murata Mfg Co Ltd | 圧電デバイスの製造方法 |
JP5277975B2 (ja) * | 2009-01-14 | 2013-08-28 | 株式会社村田製作所 | 複合基板の製造方法 |
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JP5359615B2 (ja) * | 2009-07-02 | 2013-12-04 | 株式会社村田製作所 | 複合基板の製造方法 |
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JP5569537B2 (ja) * | 2009-11-26 | 2014-08-13 | 株式会社村田製作所 | 圧電デバイスの製造方法 |
DE102010009453A1 (de) * | 2010-02-26 | 2011-09-01 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Schallwandler zum Einsetzen in ein Ohr |
JP5429200B2 (ja) | 2010-05-17 | 2014-02-26 | 株式会社村田製作所 | 複合圧電基板の製造方法および圧電デバイス |
JP5682201B2 (ja) * | 2010-09-28 | 2015-03-11 | 株式会社村田製作所 | 圧電デバイスの製造方法 |
EP2624451B1 (en) | 2010-09-28 | 2017-06-07 | Murata Manufacturing Co., Ltd. | Method for manufacturing piezoelectric device |
WO2012043615A1 (ja) * | 2010-09-28 | 2012-04-05 | 株式会社村田製作所 | 圧電デバイスの製造方法 |
JP5713025B2 (ja) | 2010-12-24 | 2015-05-07 | 株式会社村田製作所 | 弾性波装置及びその製造方法 |
JP5842911B2 (ja) * | 2011-03-14 | 2016-01-13 | 株式会社村田製作所 | 圧電デバイス、圧電デバイスの製造方法 |
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WO2012128268A1 (ja) | 2011-03-22 | 2012-09-27 | 株式会社村田製作所 | 圧電デバイス、圧電デバイスの製造方法 |
JP5835329B2 (ja) | 2011-07-29 | 2015-12-24 | 株式会社村田製作所 | 圧電デバイス、および、圧電デバイスの製造方法 |
WO2013141168A1 (ja) | 2012-03-23 | 2013-09-26 | 株式会社村田製作所 | 弾性波装置及びその製造方法 |
JP5861771B2 (ja) | 2012-03-26 | 2016-02-16 | 株式会社村田製作所 | 弾性波装置及びその製造方法 |
CN104303417B (zh) | 2012-05-15 | 2017-09-15 | 株式会社村田制作所 | 弹性波装置 |
US9893264B2 (en) | 2012-06-15 | 2018-02-13 | Carnegie Mellon University | Method for forming a suspended lithium-based membrane semiconductor structure |
US10381998B2 (en) | 2015-07-28 | 2019-08-13 | Qorvo Us, Inc. | Methods for fabrication of bonded wafers and surface acoustic wave devices using same |
US10128814B2 (en) | 2016-01-28 | 2018-11-13 | Qorvo Us, Inc. | Guided surface acoustic wave device providing spurious mode rejection |
US10084427B2 (en) | 2016-01-28 | 2018-09-25 | Qorvo Us, Inc. | Surface acoustic wave device having a piezoelectric layer on a quartz substrate and methods of manufacturing thereof |
JP6563360B2 (ja) * | 2016-04-05 | 2019-08-21 | 信越化学工業株式会社 | 酸化物単結晶薄膜を備えた複合ウェーハの製造方法 |
CN106209003B (zh) * | 2016-07-06 | 2019-03-22 | 中国科学院上海微系统与信息技术研究所 | 利用薄膜转移技术制备薄膜体声波器件的方法 |
KR20180038369A (ko) * | 2016-10-06 | 2018-04-16 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 복합 기판의 제조 방법 |
US11095266B2 (en) | 2016-10-07 | 2021-08-17 | Qorvo Us, Inc. | Slanted apodization for acoustic wave devices |
US10848121B2 (en) | 2016-10-14 | 2020-11-24 | Qorvo Us, Inc. | Guided SAW device |
US10924085B2 (en) | 2016-10-17 | 2021-02-16 | Qorvo Us, Inc. | Guided acoustic wave device |
US10483248B2 (en) * | 2017-03-23 | 2019-11-19 | Skyworks Solutions, Inc. | Wafer level chip scale filter packaging using semiconductor wafers with through wafer vias |
TWI780103B (zh) * | 2017-05-02 | 2022-10-11 | 日商日本碍子股份有限公司 | 彈性波元件及其製造方法 |
JP2019029941A (ja) | 2017-08-02 | 2019-02-21 | 株式会社ディスコ | 弾性波デバイス用基板の製造方法 |
US11206007B2 (en) | 2017-10-23 | 2021-12-21 | Qorvo Us, Inc. | Quartz orientation for guided SAW devices |
DE112018006912B4 (de) * | 2018-01-22 | 2024-02-08 | Ngk Insulators, Ltd. | Anordnung aus einem Substrat aus einem piezoelektrischen Material und einem Trägersubstrat und Verfahren zu deren Herstellung |
JP2019145895A (ja) * | 2018-02-16 | 2019-08-29 | 株式会社村田製作所 | 弾性波装置、マルチプレクサ、高周波フロントエンド回路及び通信装置 |
FR3079346B1 (fr) * | 2018-03-26 | 2020-05-29 | Soitec | Procede de fabrication d'un substrat donneur pour le transfert d'une couche piezoelectrique, et procede de transfert d'une telle couche piezoelectrique |
FR3079668B1 (fr) | 2018-03-29 | 2020-03-27 | Frec'n'sys | Dispositif d'onde acoustique de surface sur substrat composite |
DE102019204755A1 (de) | 2018-04-18 | 2019-10-24 | Skyworks Solutions, Inc. | Akustikwellenvorrichtung mit mehrschichtigem piezoelektrischem substrat |
US20220029608A1 (en) * | 2018-06-15 | 2022-01-27 | Resonant Inc. | Transversely-excited film bulk acoustic resonator package |
KR102402925B1 (ko) | 2019-11-29 | 2022-05-30 | 엔지케이 인슐레이터 엘티디 | 압전성 재료 기판과 지지 기판의 접합체 |
WO2021246446A1 (ja) * | 2020-06-03 | 2021-12-09 | 株式会社村田製作所 | 弾性波装置 |
WO2021246447A1 (ja) * | 2020-06-04 | 2021-12-09 | 株式会社村田製作所 | 弾性波装置 |
WO2022131076A1 (ja) * | 2020-12-18 | 2022-06-23 | 株式会社村田製作所 | 弾性波装置 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL8801765A (nl) * | 1988-07-12 | 1990-02-01 | Stichting Tech Wetenschapp | Akoestische-oppervlaktegolfinrichting in meerlaagse structuur met reductie van elektromagnetische overspraak. |
DE69228458T2 (de) * | 1991-09-12 | 1999-10-21 | Matsushita Electric Ind Co Ltd | Elektroakustische hybride integrierte Schaltung und ihre Herstellungsverfahren |
US5453652A (en) * | 1992-12-17 | 1995-09-26 | Matsushita Electric Industrial Co., Ltd. | Surface acoustic wave device with interdigital transducers formed on a holding substrate thereof and a method of producing the same |
DE69413280T2 (de) * | 1993-03-15 | 1999-04-22 | Matsushita Electric Ind Co Ltd | Akustische Oberflächenwellenanordnung mit laminierter Struktur |
EP0622897B1 (en) * | 1993-04-28 | 2001-03-07 | Matsushita Electric Industrial Co., Ltd. | Surface acoustic wave device and method of manufacturing the same |
US5448126A (en) * | 1993-10-05 | 1995-09-05 | Matsushita Electric Industrial Co., Ltd. | Surface acoustic wave-semiconductor composite device |
KR100301322B1 (ko) * | 1997-05-08 | 2001-09-22 | 니시무로 타이죠 | 탄성경계파디바이스및그제조방법 |
US6236141B1 (en) * | 1998-12-14 | 2001-05-22 | Matsushita Electric Industrial Co., Ltd. | Surface acoustic wave element |
-
1998
- 1998-12-30 FR FR9816661A patent/FR2788176B1/fr not_active Expired - Fee Related
-
1999
- 1999-12-21 JP JP2000592934A patent/JP2002534886A/ja active Pending
- 1999-12-21 CA CA002321905A patent/CA2321905A1/fr not_active Abandoned
- 1999-12-21 CN CN99804288A patent/CN1129230C/zh not_active Expired - Fee Related
- 1999-12-21 US US09/622,894 patent/US6445265B1/en not_active Expired - Fee Related
- 1999-12-21 DE DE69923667T patent/DE69923667T2/de not_active Expired - Fee Related
- 1999-12-21 EP EP99961134A patent/EP1060562B1/fr not_active Expired - Lifetime
- 1999-12-21 WO PCT/FR1999/003239 patent/WO2000041299A1/fr active IP Right Grant
- 1999-12-21 KR KR1020007009604A patent/KR20010083777A/ko not_active Application Discontinuation
-
2001
- 2001-10-30 HK HK01107560A patent/HK1036699A1/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
CN1294780A (zh) | 2001-05-09 |
DE69923667D1 (de) | 2005-03-17 |
EP1060562A1 (fr) | 2000-12-20 |
FR2788176A1 (fr) | 2000-07-07 |
WO2000041299A1 (fr) | 2000-07-13 |
CA2321905A1 (fr) | 2000-07-13 |
JP2002534886A (ja) | 2002-10-15 |
KR20010083777A (ko) | 2001-09-01 |
CN1129230C (zh) | 2003-11-26 |
US6445265B1 (en) | 2002-09-03 |
FR2788176B1 (fr) | 2001-05-25 |
DE69923667T2 (de) | 2006-04-06 |
EP1060562B1 (fr) | 2005-02-09 |
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Effective date: 20091221 |