GB930432A - Improvements in or relating to methods of making bodies of semi-conductor material - Google Patents
Improvements in or relating to methods of making bodies of semi-conductor materialInfo
- Publication number
- GB930432A GB930432A GB33494/61A GB3349461A GB930432A GB 930432 A GB930432 A GB 930432A GB 33494/61 A GB33494/61 A GB 33494/61A GB 3349461 A GB3349461 A GB 3349461A GB 930432 A GB930432 A GB 930432A
- Authority
- GB
- United Kingdom
- Prior art keywords
- rod
- coil
- cooled
- effected
- water
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000463 material Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000013078 crystal Substances 0.000 abstract 3
- 230000006698 induction Effects 0.000 abstract 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- 238000001816 cooling Methods 0.000 abstract 1
- 239000000112 cooling gas Substances 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 239000010453 quartz Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
- 238000004781 supercooling Methods 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/002—Continuous growth
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES70427A DE1162329B (de) | 1960-09-20 | 1960-09-20 | Verfahren zum Herstellen von langgestreckten, insbesondere dendritischen Halbleiterkoerpern und Vorrichtung zur Durchfuehrung dieses Verfahrens |
DES73416A DE1202248B (de) | 1960-09-20 | 1961-04-11 | Verfahren zum Herstellen von bandfoermigen Halbleiterkristallen |
Publications (1)
Publication Number | Publication Date |
---|---|
GB930432A true GB930432A (en) | 1963-07-03 |
Family
ID=25996215
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB33494/61A Expired GB930432A (en) | 1960-09-20 | 1961-09-19 | Improvements in or relating to methods of making bodies of semi-conductor material |
GB13919/62A Expired GB944192A (en) | 1960-09-20 | 1962-04-11 | Improvements in or relating to methods of making bodies of semi-conductor material |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB13919/62A Expired GB944192A (en) | 1960-09-20 | 1962-04-11 | Improvements in or relating to methods of making bodies of semi-conductor material |
Country Status (5)
Country | Link |
---|---|
US (1) | US3293001A (enrdf_load_stackoverflow) |
CH (2) | CH386395A (enrdf_load_stackoverflow) |
DE (2) | DE1162329B (enrdf_load_stackoverflow) |
GB (2) | GB930432A (enrdf_load_stackoverflow) |
NL (1) | NL269311A (enrdf_load_stackoverflow) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3275417A (en) * | 1963-10-15 | 1966-09-27 | Texas Instruments Inc | Production of dislocation-free silicon single crystals |
US3397042A (en) * | 1963-10-15 | 1968-08-13 | Texas Instruments Inc | Production of dislocation-free silicon single crystals |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1242578B (de) * | 1960-09-29 | 1967-06-22 | Siemens Ag | Vorrichtung zum Herstellen von bandfoermigen, dendritisch gewachsenen, hochreinen Halbleiterkristallen |
US4040890A (en) * | 1975-06-27 | 1977-08-09 | Bell Telephone Laboratories, Incorporated | Neodymium oxide doped yttrium aluminum garnet optical fiber |
US5108720A (en) * | 1991-05-20 | 1992-04-28 | Hemlock Semiconductor Corporation | Float zone processing of particulate silicon |
CN105002556A (zh) * | 2014-04-21 | 2015-10-28 | 洛阳金诺机械工程有限公司 | 一种拉制硅芯时提高硅芯结晶速度的装置 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE500569A (enrdf_load_stackoverflow) * | 1950-01-13 | |||
AT194444B (de) * | 1953-02-26 | 1958-01-10 | Siemens Ag | Verfahren und Einrichtung zur Behandlung einer längserstreckten Halbleiterkristallanordnung |
US2927008A (en) * | 1956-10-29 | 1960-03-01 | Shockley Transistor Corp | Crystal growing apparatus |
US2897329A (en) * | 1957-09-23 | 1959-07-28 | Sylvania Electric Prod | Zone melting apparatus |
FR1235341A (fr) * | 1958-03-05 | 1960-07-08 | Siemens Ag | Procédé et appareil de fabrication continue de tiges mono-cristallines minces |
US3096158A (en) * | 1959-09-25 | 1963-07-02 | Gerthart K Gaule | Apparatus for pulling single crystals in the form of long flat strips from a melt |
-
0
- NL NL269311D patent/NL269311A/xx unknown
-
1960
- 1960-09-20 DE DES70427A patent/DE1162329B/de active Pending
-
1961
- 1961-04-11 DE DES73416A patent/DE1202248B/de active Pending
- 1961-08-04 CH CH915161A patent/CH386395A/de unknown
- 1961-09-19 GB GB33494/61A patent/GB930432A/en not_active Expired
- 1961-09-20 US US139400A patent/US3293001A/en not_active Expired - Lifetime
- 1961-12-19 CH CH1472261A patent/CH401919A/de unknown
-
1962
- 1962-04-11 GB GB13919/62A patent/GB944192A/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3275417A (en) * | 1963-10-15 | 1966-09-27 | Texas Instruments Inc | Production of dislocation-free silicon single crystals |
US3397042A (en) * | 1963-10-15 | 1968-08-13 | Texas Instruments Inc | Production of dislocation-free silicon single crystals |
Also Published As
Publication number | Publication date |
---|---|
DE1162329B (de) | 1964-02-06 |
CH386395A (de) | 1965-01-15 |
GB944192A (en) | 1963-12-11 |
CH401919A (de) | 1965-11-15 |
DE1202248B (de) | 1965-10-07 |
US3293001A (en) | 1966-12-20 |
NL269311A (enrdf_load_stackoverflow) |
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