GB892088A - Method and apparatus for crystal growth - Google Patents
Method and apparatus for crystal growthInfo
- Publication number
- GB892088A GB892088A GB1882/60A GB188260A GB892088A GB 892088 A GB892088 A GB 892088A GB 1882/60 A GB1882/60 A GB 1882/60A GB 188260 A GB188260 A GB 188260A GB 892088 A GB892088 A GB 892088A
- Authority
- GB
- United Kingdom
- Prior art keywords
- rod
- crucible
- tube
- melt
- semi
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
<PICT:0892088/III/1> A monocrystalline rod 48 of semi-conductor material, e.g. silicon or germanium, containing doping additives is pulled from a melt 20 contained in a crucible 18 which is supplied with doping material from an upper tube 60 and with semi-conductor material from a lower extension tube 22 of diameter narrower than that of the crucible. The supplied semi-conductor material is in the form of a rod 24 which closely fits tube 22 and is melted at its upper end to form the melt 20 by means of an induction heating coil 14. Tube 22 slides over rod 24 under the action of gravity as melting proceeds, the relative downward movement being controlled by a pin 28 which prevents rod 24 from passing into crucible 18. Rods 24 and 48 pass through packing members 40 and 46 respectively in an enclosure 16 adapted to provide a desired atmosphere around the melt. Upward movement of rods 24 and 48 is effected by means of rollers 42 and 58 respectively. Rod 24 may move upwards continuously at such a rate that the crucible is maintained stationary. Alternatively, rod 24 may be intermittently moved rapidly upwards carrying the crucible 18 therewith from a position in which a stop 25 rests on the bottom of enclosure 16, the crucible thereafter being allowed to return to its original position under the action of gravity while the rod is stationary.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US892088XA | 1959-01-20 | 1959-01-20 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB892088A true GB892088A (en) | 1962-03-21 |
Family
ID=22216326
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1882/60A Expired GB892088A (en) | 1959-01-20 | 1960-01-19 | Method and apparatus for crystal growth |
Country Status (4)
Country | Link |
---|---|
DE (1) | DE1188040B (en) |
FR (1) | FR1244045A (en) |
GB (1) | GB892088A (en) |
NL (1) | NL246541A (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10255981A1 (en) * | 2002-11-26 | 2004-06-17 | Forschungsverbund Berlin E.V. | Device for drawing a crystal from a melt or melt solution by the Czochralski method comprises a crucible containing the molten raw material, a seed crystal of predetermined crystal orientation, and a crystal holder |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1044768B (en) * | 1954-03-02 | 1958-11-27 | Siemens Ag | Method and device for pulling a rod-shaped crystalline body, preferably a semiconductor body |
NL98843C (en) * | 1956-07-02 |
-
0
- NL NL246541D patent/NL246541A/xx unknown
-
1959
- 1959-12-18 FR FR813533A patent/FR1244045A/en not_active Expired
- 1959-12-18 DE DEI17405A patent/DE1188040B/en active Pending
-
1960
- 1960-01-19 GB GB1882/60A patent/GB892088A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
NL246541A (en) | |
DE1188040B (en) | 1965-03-04 |
FR1244045A (en) | 1960-10-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB829422A (en) | Method and apparatus for producing semi-conductor materials of high purity | |
GB809163A (en) | Improvements in or relating to zone-melting processes and apparatus for carrying outsuch processes | |
GB784617A (en) | Improvements in or relating to processes and apparatus for drawing fused bodies | |
GB913675A (en) | Production of crystals | |
GB839783A (en) | Improvements in growth of uniform composition semi-conductor crystals | |
GB838770A (en) | Improvements in method of growing semiconductor crystals | |
GB916390A (en) | Method of drawing a semi-conductor rod from a melt | |
GB827466A (en) | Improvements in or relating to methods of and apparatus for manufacturing single crystals | |
GB778123A (en) | Crystal production | |
GB915120A (en) | Improvements in or relating to methods of making rod-like bodies by drawing from a melt | |
GB892088A (en) | Method and apparatus for crystal growth | |
GB843800A (en) | Improvements in or relating to methods of treating bodies of material so as to controla solid-liquid interface therein | |
US3781209A (en) | Method of producing homogeneous rods of semiconductor material | |
US2595780A (en) | Method of producing germanium pellets | |
GB1029804A (en) | A process for producing a substantially monocrystalline rod of semiconductor material | |
GB870408A (en) | Treatment of silicon | |
GB1045664A (en) | A process for melting a rod of polycrystalline material zone-by-zone | |
GB906485A (en) | Improvements in the production of mono-crystalline semiconductor material | |
GB1029769A (en) | Improvements in or relating to processes for the production of semiconductor crystals | |
GB930432A (en) | Improvements in or relating to methods of making bodies of semi-conductor material | |
GB1245417A (en) | Process and apparatus for the melting of particles of quartz or glass | |
GB1031560A (en) | Improvements in or relating to the production of monocrystalline semiconductor material | |
GB912838A (en) | Method of manufacturing monocrystals, particularly of semiconductor material | |
GB900562A (en) | Improvements in or relating to the production of semi-conductor material | |
GB844813A (en) | Zone melting apparatus |