GB852713A - Method for the production of diodes - Google Patents

Method for the production of diodes

Info

Publication number
GB852713A
GB852713A GB3256/59A GB325659A GB852713A GB 852713 A GB852713 A GB 852713A GB 3256/59 A GB3256/59 A GB 3256/59A GB 325659 A GB325659 A GB 325659A GB 852713 A GB852713 A GB 852713A
Authority
GB
United Kingdom
Prior art keywords
evaporated
strips
granules
germanium
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3256/59A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Societe dElectronique et dAutomatisme SA
Original Assignee
Societe dElectronique et dAutomatisme SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Societe dElectronique et dAutomatisme SA filed Critical Societe dElectronique et dAutomatisme SA
Publication of GB852713A publication Critical patent/GB852713A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C23C14/505—Substrate holders for rotation of the substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/944—Shadow

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

852,713. Coating by vapour deposition. SOC. D'ELECTRONIQUE ET D'AUTOMATISME. Jan. 29, 1959 [Feb. 10, 1958], No. 3256/59. Class 82(2) [Also in Group XXXVI] Diodes, each consisting of an evaporated counter electrode which extends over a plurality of paths through a dielectric layer to a semiconductor layer are produced by evaporating semiconductor on to conducting strips, sprinkling grains of enamel on the semiconductor and then covering with an evaporated counter electrode film. Fig. 1 shows a plurality of iron-nickel alloy strips 17 coated with a gold-bismuth alloy and mounted on a rotatable frame with vertical supports 15, 16 in a vacuum bell jar 1. Germanium or silicon from a set of crucibles 18 is evaporated on to the heated strips 17. The strip holder is then rotated 180 degrees by magnet 13 which also causes the strips to be vibrated, and the germanium surface covered with enamel granules from receptacle 2. The granules soften, and when the frame is restored to its original position some fall off leaving small holes. A tin-cadmium alloy is then evaporated on to this layer from crucibles 20, which penetrates the holes to contact the germanium. The granule size governs the size and density of the points of contact. The granules may consist of Na 2 O, CaO, MgO, SiO 2 and B 2 O 3
GB3256/59A 1958-02-10 1959-01-29 Method for the production of diodes Expired GB852713A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1105068X 1958-02-10

Publications (1)

Publication Number Publication Date
GB852713A true GB852713A (en) 1960-10-26

Family

ID=9623193

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3256/59A Expired GB852713A (en) 1958-02-10 1959-01-29 Method for the production of diodes

Country Status (4)

Country Link
US (1) US2983631A (en)
DE (1) DE1105068B (en)
FR (1) FR1191404A (en)
GB (1) GB852713A (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3151004A (en) * 1961-03-30 1964-09-29 Rca Corp Semiconductor devices
US3166448A (en) * 1961-04-07 1965-01-19 Clevite Corp Method for producing rib transistor
US3331716A (en) * 1962-06-04 1967-07-18 Philips Corp Method of manufacturing a semiconductor device by vapor-deposition
US3271201A (en) * 1962-10-30 1966-09-06 Itt Planar semiconductor devices
US3304471A (en) * 1963-01-28 1967-02-14 Hughes Aircraft Co Thin film diode
US3258359A (en) * 1963-04-08 1966-06-28 Siliconix Inc Semiconductor etch and oxidation process
US3287186A (en) * 1963-11-26 1966-11-22 Rca Corp Semiconductor devices and method of manufacture thereof
US3304469A (en) * 1964-03-03 1967-02-14 Rca Corp Field effect solid state device having a partially insulated electrode
US3409483A (en) * 1964-05-01 1968-11-05 Texas Instruments Inc Selective deposition of semiconductor materials

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL111901C (en) * 1950-09-12 1900-01-01
US2702259A (en) * 1951-08-09 1955-02-15 Emi Ltd Manufacture of electrodes which are sensitized so as to be emitters of photoelectrons or secondary electrons
US2789062A (en) * 1952-04-03 1957-04-16 Gen Electric Transparent fluoride luminescent screen and method for preparing same
NL180750B (en) * 1952-08-20 Bristol Myers Co PROCEDURE FOR PREPARING A 7-AMINO-3-CEFEM-4-CARBONIC ACID BY CONVERTING A 7-ACYLAMINO-3-CEFEM-4-CARBONIC ACID DERIVATIVE.
US2818831A (en) * 1955-02-18 1958-01-07 Rca Corp Means for obtaining a uniform evaporated deposit
US2766144A (en) * 1955-10-31 1956-10-09 Lidow Eric Photocell

Also Published As

Publication number Publication date
FR1191404A (en) 1959-10-20
US2983631A (en) 1961-05-09
DE1105068B (en) 1961-04-20

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