GB1513141A - Method of producing single crystalline self-supporting targets for photon and electron sensitive devices - Google Patents
Method of producing single crystalline self-supporting targets for photon and electron sensitive devicesInfo
- Publication number
- GB1513141A GB1513141A GB11180/75A GB1118075A GB1513141A GB 1513141 A GB1513141 A GB 1513141A GB 11180/75 A GB11180/75 A GB 11180/75A GB 1118075 A GB1118075 A GB 1118075A GB 1513141 A GB1513141 A GB 1513141A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- substrate
- gaas
- targets
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010410 layer Substances 0.000 abstract 10
- 239000000758 substrate Substances 0.000 abstract 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 4
- 239000000463 material Substances 0.000 abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000000151 deposition Methods 0.000 abstract 2
- 239000000203 mixture Substances 0.000 abstract 2
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 229910003437 indium oxide Inorganic materials 0.000 abstract 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 abstract 1
- 230000000737 periodic effect Effects 0.000 abstract 1
- 238000002360 preparation method Methods 0.000 abstract 1
- 238000001552 radio frequency sputter deposition Methods 0.000 abstract 1
- 230000000717 retained effect Effects 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 239000002356 single layer Substances 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract 1
- 229910001887 tin oxide Inorganic materials 0.000 abstract 1
- 239000012780 transparent material Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/20—Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
- H01J9/233—Manufacture of photoelectric screens or charge-storage screens
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
1513141 Semiconductor targets; storage pick-up tubes B E ARTHUR 18 March 1975 11180/75 Heading H1D, H1K A target is made by epitoxically depositing a photoemissive, photo- or cathode-conductive or secondary electron emissive semi-conductor layer on a microcrystalline semiconductor seed of different chemical composition, etching away the seed crystal material through a mask to expose the lower face of the layer and then depositing a conductive film on either face of the layer to form a contact. The layer may consist of a wide range of binary, ternary and quaternary compounds of elements selected from Groups II to VI of the periodic table and two or more layers of different compositions may be superposed. Indium oxide and tin oxide are suitable transparent materials for the conductive film while substrate materials are selected so as to enable their removal by selective etchants using masks of silicon dioxide or nitride deposited in vacuum or by RF sputtering. The substrate surface on which the layer is deposited may be planar or domed and the retained seed material typically forms a supporting for the layer. Details are given of the preparation of vidicon targets comprising single layers of Se or Te doped GaP or GaAs1-xPx where 0 # 1 # 1 on a GaAs substrate, electron multipliers comprising a layer of Zn doped GaAs or GaAs1-xPx or a ZnSe substrate and superposed layers of P type GaP and caesiumactivated GaAs on a GaAs substrate, and a target for storing electron images comprising a layer of ZnSe on a GaAs substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB11180/75A GB1513141A (en) | 1975-03-18 | 1975-03-18 | Method of producing single crystalline self-supporting targets for photon and electron sensitive devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB11180/75A GB1513141A (en) | 1975-03-18 | 1975-03-18 | Method of producing single crystalline self-supporting targets for photon and electron sensitive devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1513141A true GB1513141A (en) | 1978-06-07 |
Family
ID=9981482
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB11180/75A Expired GB1513141A (en) | 1975-03-18 | 1975-03-18 | Method of producing single crystalline self-supporting targets for photon and electron sensitive devices |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB1513141A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2579832A1 (en) * | 1985-03-26 | 1986-10-03 | Centre Nat Etd Spatiales | METHOD FOR ALLOYING SOLAR CELLS AND CELLS THUS OBTAINED |
| US6473388B1 (en) * | 2000-08-31 | 2002-10-29 | Hewlett Packard Company | Ultra-high density information storage device based on modulated cathodoconductivity |
-
1975
- 1975-03-18 GB GB11180/75A patent/GB1513141A/en not_active Expired
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2579832A1 (en) * | 1985-03-26 | 1986-10-03 | Centre Nat Etd Spatiales | METHOD FOR ALLOYING SOLAR CELLS AND CELLS THUS OBTAINED |
| WO1986005923A1 (en) * | 1985-03-26 | 1986-10-09 | Centre National D'etudes Spatiales | Process to reduce the weight of solar cells, and the cells thus obtained |
| EP0197832A1 (en) * | 1985-03-26 | 1986-10-15 | Centre National D'etudes Spatiales | Method of enlightening solar cells and cells thus obtained |
| US6473388B1 (en) * | 2000-08-31 | 2002-10-29 | Hewlett Packard Company | Ultra-high density information storage device based on modulated cathodoconductivity |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PCNP | Patent ceased through non-payment of renewal fee |