JPS5598877A - Semiconductor element - Google Patents

Semiconductor element

Info

Publication number
JPS5598877A
JPS5598877A JP612179A JP612179A JPS5598877A JP S5598877 A JPS5598877 A JP S5598877A JP 612179 A JP612179 A JP 612179A JP 612179 A JP612179 A JP 612179A JP S5598877 A JPS5598877 A JP S5598877A
Authority
JP
Japan
Prior art keywords
wafer
container
yield
insulating substrate
improve
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP612179A
Other languages
Japanese (ja)
Inventor
Kazutaka Terajima
Mitsue Kikuchi
Shoichi Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP612179A priority Critical patent/JPS5598877A/en
Publication of JPS5598877A publication Critical patent/JPS5598877A/en
Pending legal-status Critical Current

Links

Landscapes

  • Light Receiving Elements (AREA)

Abstract

PURPOSE: To prevent deterioration of the characteristics of a semiconductor element and improve the yield of the element by adhering a wafer onto an insulating substrate with adhesive layer containing no air bubbles.
CONSTITUTION: An insulating substrate 13 is placed on a plate glass 12 in a glass container 11, an adhesive 14 is coated thereon, and a wafer 15 is placed thereon. A glass cover 17 is contacted through grease 18 with the container 11. Then, the container 11 is evacuated to vacuum, and after predetermined time, a chamber 19 is returned to 1atm. Since the air bubbles in the layer 14 are entirely removed by this operation, the wafer may be polished uniformly to extremely thin state and to introduced no strain at the wafer. Accordingly, it can prevent deterioration of its characteristic as an infrated ray detector and improve the yield of the detector.
COPYRIGHT: (C)1980,JPO&Japio
JP612179A 1979-01-24 1979-01-24 Semiconductor element Pending JPS5598877A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP612179A JPS5598877A (en) 1979-01-24 1979-01-24 Semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP612179A JPS5598877A (en) 1979-01-24 1979-01-24 Semiconductor element

Publications (1)

Publication Number Publication Date
JPS5598877A true JPS5598877A (en) 1980-07-28

Family

ID=11629667

Family Applications (1)

Application Number Title Priority Date Filing Date
JP612179A Pending JPS5598877A (en) 1979-01-24 1979-01-24 Semiconductor element

Country Status (1)

Country Link
JP (1) JPS5598877A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4706106A (en) * 1984-06-14 1987-11-10 Mitsubishi Denki Kabushiki Kaisha Semiconductor light receiving device
EP0600392A3 (en) * 1992-11-26 1994-08-24 Sumitomo Electric Industries Process for reinforcing a semiconductor wafer and a reinforced semiconductor wafer.

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4706106A (en) * 1984-06-14 1987-11-10 Mitsubishi Denki Kabushiki Kaisha Semiconductor light receiving device
EP0600392A3 (en) * 1992-11-26 1994-08-24 Sumitomo Electric Industries Process for reinforcing a semiconductor wafer and a reinforced semiconductor wafer.
US5445692A (en) * 1992-11-26 1995-08-29 Sumitomo Electric Industries, Ltd. Process for reinforcing a semiconductor wafer

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