US2702259A - Manufacture of electrodes which are sensitized so as to be emitters of photoelectrons or secondary electrons - Google Patents

Manufacture of electrodes which are sensitized so as to be emitters of photoelectrons or secondary electrons Download PDF

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Publication number
US2702259A
US2702259A US241151A US24115151A US2702259A US 2702259 A US2702259 A US 2702259A US 241151 A US241151 A US 241151A US 24115151 A US24115151 A US 24115151A US 2702259 A US2702259 A US 2702259A
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layer
silver
sensitized
photoelectrons
bismuth
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US241151A
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Sommer Alfred Herman
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EMI Ltd
Electrical and Musical Industries Ltd
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EMI Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02Main electrodes
    • H01J1/32Secondary-electron-emitting electrodes

Definitions

  • This invention relates to the manufacture of electrodes which are sensitized so as to be emitters of photoelectrons or secondary electrons.
  • One form of electrode which has been proposed hitherto for use as a semitransparent photoelectric cathode in electron discharge devices comprises a layer of bismuth on to which is evaporated a layer of silver and which isthen exposed successively to oxygen, caesium and again to oxygen.
  • Such an electrode may be formed, for example by evaporating a layer of bismuth on to a suitable transparent support, for example on the inner surface of a glass envelope, until the light transmission through the support is reduced to about 60 to 70 per cent of its original value. Thereafter, silver is deposited by evaporation on to the layer of bismuth until the total light transmission is reduced to about 50 to 60 per cent.
  • the silver layer is then oxidized by exposing the support in an electric discharge in oxygen until the light transmission increases to the value prior to the silver deposition, the assumption being that silver oxide is completely trans parent. Thereafter the support is exposed to caesium vapour by conventional methods while baking the support at about 150 C. and finally, after cooling the support, superficial oxidation of the layers is effected.
  • This method has however, the disadvantage that consistent sensitivities are not obtained. Occasionally a sensitivity of the order of 40 ,ua/L. (micro-amperes per lumen of incident light) is obtained, but sensitivities between 15 and 25 a/L. are more usual and, for reasons which are not apparent, sensitivities as low as 5 to 8 a./l. are quite frequent. There is also the disadvantage that the sensitivity has a tendency to decrease after the envelope of the device has been sealed off the pump, in some cases to a value as low as half the initial value, this decrease being particularly marked for red light.
  • the object of the present invention is to reduce the above-mentioned disadvantages.
  • an electrode which is sensitized to be an emitter of photoelectrons or secondary electrons comprising the steps of depositing successively on a suitable support a layer of bismuth, a layer of silver, a layer of bismuth and a further layer of silver, oxidizing the last-mentioned layer of silver and subsequently sensitizing the electrode by exposure to an alkali metal.
  • a layer of bismuth is deposited on a transparent support in an evacuated envelope by evaporation until the lighttransmission through the support is reduced to about 75 per cent.
  • a layer of silver is then deposited by evaporation on to the bismuth layer until the light transmission is reduced to about per cent.
  • a second layer of bismuth is deposited until the light-transmission is about 55 per cent and then a second layer of silver is deposited until the light-transmission is about 50 per cent.
  • Phitoelectric cathodes manufactured in this way have been foundto have sensitivities about 40 a/L. and the results appear to be reproducible. Sensitivities up to a/L. have been obtained. Moreover, the sensitivity and in particular the red response has been maintained under test over several Weeks, and no fatigue has been observed. The mechanism of the improvement which is obtained as a result of the present invention is not fully understood.
  • a method of manufacturing an electrode sensitized to be an emitter of photoelectrons or secondary electrons comprising the steps of evaporating a layer of bismuth on to a transparent support until the light transmission is reduced to the order of per cent, evaporating a layer of silver on the bismuth layer until the light transmission is reduced to the order of 65 per cent, evaporating a layer of bismuth on the silver layer until the light transmission is reduced to the order of 55 per cent, evaporating a layer of silver on the latter layer of bismuth until the light transmission is reduced to the order of 50 per cent, exposing the metal evaporated on said support to oxygen until the light transmission is increased to the order of 55 per cent, and thereafter exposing the metal evaporated on said support to caesium.

Description

United States Patent MANUFACTURE OF ELECTRODES WHICH ARE SENSITIZED SO AS TO BE EMITTERS 0F PHOTQ- ELECTRONS OR SECDNDARY ELECTR'GNS Alfred Herman Summer, Iver, England, assignor to Electric & Musical Industries Limited, Hayes, England, a British company No Drawing. Application August 9, 1951, Serial No. 241,151
1 Claim. ((11. 117211) This invention relates to the manufacture of electrodes which are sensitized so as to be emitters of photoelectrons or secondary electrons.
One form of electrode which has been proposed hitherto for use as a semitransparent photoelectric cathode in electron discharge devices, comprises a layer of bismuth on to which is evaporated a layer of silver and which isthen exposed successively to oxygen, caesium and again to oxygen. Such an electrode may be formed, for example by evaporating a layer of bismuth on to a suitable transparent support, for example on the inner surface of a glass envelope, until the light transmission through the support is reduced to about 60 to 70 per cent of its original value. Thereafter, silver is deposited by evaporation on to the layer of bismuth until the total light transmission is reduced to about 50 to 60 per cent. The silver layer is then oxidized by exposing the support in an electric discharge in oxygen until the light transmission increases to the value prior to the silver deposition, the assumption being that silver oxide is completely trans parent. Thereafter the support is exposed to caesium vapour by conventional methods while baking the support at about 150 C. and finally, after cooling the support, superficial oxidation of the layers is effected. This method has however, the disadvantage that consistent sensitivities are not obtained. Occasionally a sensitivity of the order of 40 ,ua/L. (micro-amperes per lumen of incident light) is obtained, but sensitivities between 15 and 25 a/L. are more usual and, for reasons which are not apparent, sensitivities as low as 5 to 8 a./l. are quite frequent. There is also the disadvantage that the sensitivity has a tendency to decrease after the envelope of the device has been sealed off the pump, in some cases to a value as low as half the initial value, this decrease being particularly marked for red light.
The object of the present invention is to reduce the above-mentioned disadvantages.
According to the present invention there is provided a method of manufacturing an electrode which is sensitized to be an emitter of photoelectrons or secondary electrons comprising the steps of depositing successively on a suitable support a layer of bismuth, a layer of silver, a layer of bismuth and a further layer of silver, oxidizing the last-mentioned layer of silver and subsequently sensitizing the electrode by exposure to an alkali metal.
In one example of manufacturing a semi-transparent photocathode in accordance with the present invention, a layer of bismuth is deposited on a transparent support in an evacuated envelope by evaporation until the lighttransmission through the support is reduced to about 75 per cent. A layer of silver is then deposited by evaporation on to the bismuth layer until the light transmission is reduced to about per cent. Thereafter a second layer of bismuth is deposited until the light-transmission is about 55 per cent and then a second layer of silver is deposited until the light-transmission is about 50 per cent. Subsequently oxygen is introduced into the envelope and if necessary an electric discharge is initiated and maintained in the oxygen until only the top layer of the silver is oxidized, as indicated by a restoration of the light-transmission through the support and the deposited layers to about 55 per cent of the value before the deposition of the top layer of silver. Caesium vapour is thereafter introduced and the electrode is sensitized While the envelope is being baked, in known manner. Superficial oxidation may then be effected after cooling the envelope, although in accordance with the present invention satisfactory results have been obtained without such superficial oxidation.
Phitoelectric cathodes manufactured in this way have been foundto have sensitivities about 40 a/L. and the results appear to be reproducible. Sensitivities up to a/L. have been obtained. Moreover, the sensitivity and in particular the red response has been maintained under test over several Weeks, and no fatigue has been observed. The mechanism of the improvement which is obtained as a result of the present invention is not fully understood.
What I claim is:
A method of manufacturing an electrode sensitized to be an emitter of photoelectrons or secondary electrons, comprising the steps of evaporating a layer of bismuth on to a transparent support until the light transmission is reduced to the order of per cent, evaporating a layer of silver on the bismuth layer until the light transmission is reduced to the order of 65 per cent, evaporating a layer of bismuth on the silver layer until the light transmission is reduced to the order of 55 per cent, evaporating a layer of silver on the latter layer of bismuth until the light transmission is reduced to the order of 50 per cent, exposing the metal evaporated on said support to oxygen until the light transmission is increased to the order of 55 per cent, and thereafter exposing the metal evaporated on said support to caesium.
References Cited in the file of this patent UNITED STATES PATENTS 2,285,058 Samson June 2, 1942 2,285,062 Sommer June 2, 1942 2,297,467 Gorlich Sept. 29, 1942 2,391,280 Teal Dec. 18, 1945 2,548,514 Brarnley Apr. 10, 1951
US241151A 1951-08-09 1951-08-09 Manufacture of electrodes which are sensitized so as to be emitters of photoelectrons or secondary electrons Expired - Lifetime US2702259A (en)

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2834724A (en) * 1956-04-26 1958-05-13 Mendes Abraham Piza Method of electroplating plastic articles
US2983631A (en) * 1958-02-10 1961-05-09 Electronique & Automatisme Sa Method for making diodes and products resulting therefrom
US3053698A (en) * 1958-04-11 1962-09-11 Libbey Owens Ford Glass Co Electrically conductive multilayer transparent article and method for making the same
US3062962A (en) * 1956-11-30 1962-11-06 Nat Res Dev Photo-electron image multiplier
US3632442A (en) * 1967-04-21 1972-01-04 Philips Corp Photocathodes
US3936545A (en) * 1971-12-03 1976-02-03 Robert Bosch G.M.B.H. Method of selectively forming oxidized areas

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2285062A (en) * 1939-07-20 1942-06-02 Cinema Television Ltd Photoelectrically sensitive electrode
US2285058A (en) * 1939-07-24 1942-06-02 Cinema Television Ltd Method of manufacturing mosaic electrodes
US2297467A (en) * 1939-04-26 1942-09-29 Gorlich Paul Photoelectric cathode
US2391280A (en) * 1942-11-26 1945-12-18 Bell Telephone Labor Inc Method of forming layers for electronic cathodes
US2548514A (en) * 1945-08-23 1951-04-10 Bramley Jenny Process of producing secondaryelectron-emitting surfaces

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2297467A (en) * 1939-04-26 1942-09-29 Gorlich Paul Photoelectric cathode
US2285062A (en) * 1939-07-20 1942-06-02 Cinema Television Ltd Photoelectrically sensitive electrode
US2285058A (en) * 1939-07-24 1942-06-02 Cinema Television Ltd Method of manufacturing mosaic electrodes
US2391280A (en) * 1942-11-26 1945-12-18 Bell Telephone Labor Inc Method of forming layers for electronic cathodes
US2548514A (en) * 1945-08-23 1951-04-10 Bramley Jenny Process of producing secondaryelectron-emitting surfaces

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2834724A (en) * 1956-04-26 1958-05-13 Mendes Abraham Piza Method of electroplating plastic articles
US3062962A (en) * 1956-11-30 1962-11-06 Nat Res Dev Photo-electron image multiplier
US2983631A (en) * 1958-02-10 1961-05-09 Electronique & Automatisme Sa Method for making diodes and products resulting therefrom
US3053698A (en) * 1958-04-11 1962-09-11 Libbey Owens Ford Glass Co Electrically conductive multilayer transparent article and method for making the same
US3632442A (en) * 1967-04-21 1972-01-04 Philips Corp Photocathodes
US3936545A (en) * 1971-12-03 1976-02-03 Robert Bosch G.M.B.H. Method of selectively forming oxidized areas

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