GB2133641B - Ac solid state relay circuit and thyristor structure - Google Patents
Ac solid state relay circuit and thyristor structureInfo
- Publication number
- GB2133641B GB2133641B GB08333998A GB8333998A GB2133641B GB 2133641 B GB2133641 B GB 2133641B GB 08333998 A GB08333998 A GB 08333998A GB 8333998 A GB8333998 A GB 8333998A GB 2133641 B GB2133641 B GB 2133641B
- Authority
- GB
- United Kingdom
- Prior art keywords
- thyristor
- control circuit
- solid state
- relay circuit
- state relay
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000007787 solid Substances 0.000 title 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 238000005286 illumination Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 230000001052 transient effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/28—Modifications for introducing a time delay before switching
- H03K17/292—Modifications for introducing a time delay before switching in thyristor, unijunction transistor or programmable unijunction transistor switches
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0824—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in thyristor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/13—Modifications for switching at zero crossing
- H03K17/136—Modifications for switching at zero crossing in thyristor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
- H03K17/79—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar semiconductor switches with more than two PN-junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/26—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors
- H10F30/263—Photothyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
- H01L2924/13033—TRIAC - Triode for Alternating Current - A bidirectional switching device containing two thyristor structures with common gate contact
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
Landscapes
- Electronic Switches (AREA)
- Facsimile Heads (AREA)
- Thyristors (AREA)
- Facsimile Scanning Arrangements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/451,792 US4535251A (en) | 1982-12-21 | 1982-12-21 | A.C. Solid state relay circuit and structure |
| US55502583A | 1983-11-25 | 1983-11-25 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| GB8333998D0 GB8333998D0 (en) | 1984-02-01 |
| GB2133641A GB2133641A (en) | 1984-07-25 |
| GB2133641B true GB2133641B (en) | 1986-10-22 |
Family
ID=27036523
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB08333998A Expired GB2133641B (en) | 1982-12-21 | 1983-12-21 | Ac solid state relay circuit and thyristor structure |
| GB08604263A Expired GB2174242B (en) | 1982-12-21 | 1986-02-20 | Optically fired lateral thyristor structure |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB08604263A Expired GB2174242B (en) | 1982-12-21 | 1986-02-20 | Optically fired lateral thyristor structure |
Country Status (12)
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2590750B1 (fr) * | 1985-11-22 | 1991-05-10 | Telemecanique Electrique | Dispositif de commutation de puissance a semi-conducteurs et son utilisation a la realisation d'un relais statique en courant alternatif |
| GB2234642A (en) * | 1989-07-19 | 1991-02-06 | Philips Nv | Protection for a switched bridge circuit |
| GB2241827B (en) * | 1990-02-23 | 1994-01-26 | Matsushita Electric Works Ltd | Method for manufacturing optically triggered lateral thyristor |
| GB2254730B (en) * | 1991-04-08 | 1994-09-21 | Champion Spark Plug Europ | High current photosensitive electronic switch |
| JP3495847B2 (ja) * | 1995-09-11 | 2004-02-09 | シャープ株式会社 | サイリスタを備える半導体集積回路 |
| US6518604B1 (en) * | 2000-09-21 | 2003-02-11 | Conexant Systems, Inc. | Diode with variable width metal stripes for improved protection against electrostatic discharge (ESD) current failure |
| EP3249815B1 (en) * | 2016-05-23 | 2019-08-28 | NXP USA, Inc. | Circuit arrangement for fast turn-off of bi-directional switching device |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5416839B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1973-03-06 | 1979-06-25 | ||
| US4001867A (en) * | 1974-08-22 | 1977-01-04 | Dionics, Inc. | Semiconductive devices with integrated circuit switches |
| JPS5574168A (en) * | 1978-11-28 | 1980-06-04 | Oki Electric Ind Co Ltd | Pnpn switch |
| DE2932969A1 (de) * | 1979-04-20 | 1980-10-30 | Ske | Halbleiter-relaiskreis und verfahren zu seiner herstellung |
| DE2922250A1 (de) * | 1979-05-31 | 1980-12-11 | Siemens Ag | Lichtsteuerbarer transistor |
| US4295058A (en) * | 1979-06-07 | 1981-10-13 | Eaton Corporation | Radiant energy activated semiconductor switch |
| DE3019907A1 (de) * | 1980-05-23 | 1981-12-03 | Siemens AG, 1000 Berlin und 8000 München | Lichtsteuerbarer zweirichtungsthyristor |
| FR2488046A1 (fr) * | 1980-07-31 | 1982-02-05 | Silicium Semiconducteur Ssc | Dispositif de puissance a commande par transistor dmos |
| US4361798A (en) * | 1980-10-27 | 1982-11-30 | Pitney Bowes Inc. | System for extending the voltage range of a phase-fired triac controller |
-
1983
- 1983-12-15 SE SE8306952A patent/SE8306952L/xx not_active Application Discontinuation
- 1983-12-15 IL IL70462A patent/IL70462A/xx unknown
- 1983-12-15 DE DE19833345449 patent/DE3345449A1/de active Granted
- 1983-12-20 IT IT24285/83A patent/IT1194526B/it active
- 1983-12-20 KR KR1019830006040A patent/KR900004197B1/ko not_active Expired
- 1983-12-20 CA CA000443824A patent/CA1237170A/en not_active Expired
- 1983-12-20 CH CH6781/83A patent/CH664861A5/de not_active IP Right Cessation
- 1983-12-20 NL NL8304376A patent/NL8304376A/xx not_active Application Discontinuation
- 1983-12-21 GB GB08333998A patent/GB2133641B/en not_active Expired
- 1983-12-21 MX MX4482A patent/MX160049A/es unknown
- 1983-12-21 BR BR8307043A patent/BR8307043A/pt unknown
- 1983-12-21 FR FR8320500A patent/FR2538170B1/fr not_active Expired
- 1983-12-21 MX MX199861A patent/MX155562A/es unknown
-
1986
- 1986-02-20 GB GB08604263A patent/GB2174242B/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB2174242A (en) | 1986-10-29 |
| GB2133641A (en) | 1984-07-25 |
| IL70462A (en) | 1987-09-16 |
| KR900004197B1 (ko) | 1990-06-18 |
| IT8324285A1 (it) | 1985-06-20 |
| IT1194526B (it) | 1988-09-22 |
| NL8304376A (nl) | 1984-07-16 |
| FR2538170B1 (fr) | 1988-05-27 |
| CA1237170A (en) | 1988-05-24 |
| SE8306952D0 (sv) | 1983-12-15 |
| MX160049A (es) | 1989-11-13 |
| KR840007203A (ko) | 1984-12-05 |
| MX155562A (es) | 1988-03-25 |
| DE3345449C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1989-08-17 |
| DE3345449A1 (de) | 1984-07-12 |
| GB8604263D0 (en) | 1986-03-26 |
| CH664861A5 (de) | 1988-03-31 |
| GB2174242B (en) | 1987-06-10 |
| IT8324285A0 (it) | 1983-12-20 |
| FR2538170A1 (fr) | 1984-06-22 |
| SE8306952L (sv) | 1984-06-22 |
| IL70462A0 (en) | 1984-03-30 |
| BR8307043A (pt) | 1984-07-31 |
| GB8333998D0 (en) | 1984-02-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 19971221 |