GB1569897A - Field effect transistor - Google Patents

Field effect transistor Download PDF

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Publication number
GB1569897A
GB1569897A GB49288/76A GB4928876A GB1569897A GB 1569897 A GB1569897 A GB 1569897A GB 49288/76 A GB49288/76 A GB 49288/76A GB 4928876 A GB4928876 A GB 4928876A GB 1569897 A GB1569897 A GB 1569897A
Authority
GB
United Kingdom
Prior art keywords
substrate
regions
region
dopant
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB49288/76A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1569897A publication Critical patent/GB1569897A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/299—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations
    • H10D62/307—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations the doping variations being parallel to the channel lengths
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
GB49288/76A 1975-12-31 1976-11-25 Field effect transistor Expired GB1569897A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US64577175A 1975-12-31 1975-12-31

Publications (1)

Publication Number Publication Date
GB1569897A true GB1569897A (en) 1980-06-25

Family

ID=24590420

Family Applications (1)

Application Number Title Priority Date Filing Date
GB49288/76A Expired GB1569897A (en) 1975-12-31 1976-11-25 Field effect transistor

Country Status (7)

Country Link
US (1) US4070687A (enExample)
JP (1) JPS5283181A (enExample)
CA (1) CA1057418A (enExample)
DE (1) DE2655998C2 (enExample)
FR (1) FR2337428A1 (enExample)
GB (1) GB1569897A (enExample)
IT (1) IT1070009B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20210091181A1 (en) * 2019-09-24 2021-03-25 Intel Corporation High aspect ration source or drain structures with abrupt dopant profile
US11552169B2 (en) * 2019-03-27 2023-01-10 Intel Corporation Source or drain structures with phosphorous and arsenic co-dopants

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4173791A (en) * 1977-09-16 1979-11-06 Fairchild Camera And Instrument Corporation Insulated gate field-effect transistor read-only memory array
US4212683A (en) * 1978-03-27 1980-07-15 Ncr Corporation Method for making narrow channel FET
US4485390A (en) * 1978-03-27 1984-11-27 Ncr Corporation Narrow channel FET
JPS54144183A (en) * 1978-05-01 1979-11-10 Handotai Kenkyu Shinkokai Insulated gate type electrostatic induction transistor and semiconductor integrated circuit
JPS5561069A (en) * 1978-10-31 1980-05-08 Fujitsu Ltd Manufacture of semiconductor device
US4282646A (en) * 1979-08-20 1981-08-11 International Business Machines Corporation Method of making a transistor array
US4329186A (en) * 1979-12-20 1982-05-11 Ibm Corporation Simultaneously forming fully implanted DMOS together with enhancement and depletion mode MOSFET devices
US4369072A (en) * 1981-01-22 1983-01-18 International Business Machines Corp. Method for forming IGFET devices having improved drain voltage characteristics
EP0069649B1 (en) * 1981-07-10 1989-04-19 FAIRCHILD CAMERA & INSTRUMENT CORPORATION Self-aligned antiblooming structure for charge-coupled devices and method of fabrication thereof
US5118631A (en) * 1981-07-10 1992-06-02 Loral Fairchild Corporation Self-aligned antiblooming structure for charge-coupled devices and method of fabrication thereof
JPS5833870A (ja) * 1981-08-24 1983-02-28 Hitachi Ltd 半導体装置
FR2529715A1 (fr) * 1982-07-01 1984-01-06 Commissariat Energie Atomique Procede d'optimisation du dopage dans un transistor mos
JPS59126674A (ja) * 1983-01-10 1984-07-21 Toshiba Corp 情報記憶用半導体装置
JPS62283667A (ja) * 1986-05-31 1987-12-09 Toshiba Corp 半導体装置の製造方法
JPS63119574A (ja) * 1986-11-07 1988-05-24 Toshiba Corp 半導体装置の製造方法
US4906588A (en) * 1988-06-23 1990-03-06 Dallas Semiconductor Corporation Enclosed buried channel transistor
US5122474A (en) * 1988-06-23 1992-06-16 Dallas Semiconductor Corporation Method of fabricating a CMOS IC with reduced susceptibility to PMOS punchthrough
US4943537A (en) * 1988-06-23 1990-07-24 Dallas Semiconductor Corporation CMOS integrated circuit with reduced susceptibility to PMOS punchthrough
EP0513415A1 (en) * 1991-05-16 1992-11-19 Kabushiki Kaisha Toshiba Insulated gate FET having double-layered wells of low and high impurity concentrations and method of manufacturing the same
JP3212150B2 (ja) * 1992-08-07 2001-09-25 株式会社日立製作所 半導体装置
JPH10214964A (ja) * 1997-01-30 1998-08-11 Oki Electric Ind Co Ltd Ｍｏｓｆｅｔ及びその製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1153428A (en) * 1965-06-18 1969-05-29 Philips Nv Improvements in Semiconductor Devices.
GB1316555A (enExample) * 1969-08-12 1973-05-09
US3806773A (en) * 1971-07-17 1974-04-23 Sony Corp Field effect transistor having back-to-back diodes connected to the gate electrode and having a protective layer between the source and the diodes to prevent thyristor action
US3877055A (en) * 1972-11-13 1975-04-08 Motorola Inc Semiconductor memory device
US3883372A (en) * 1973-07-11 1975-05-13 Westinghouse Electric Corp Method of making a planar graded channel MOS transistor
JPS571904B2 (enExample) * 1973-07-12 1982-01-13
JPS5036087A (enExample) * 1973-07-13 1975-04-04
US3996655A (en) * 1973-12-14 1976-12-14 Texas Instruments Incorporated Processes of forming insulated gate field effect transistors with channel lengths of one micron in integrated circuits with component isolated and product
US3909320A (en) * 1973-12-26 1975-09-30 Signetics Corp Method for forming MOS structure using double diffusion

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11552169B2 (en) * 2019-03-27 2023-01-10 Intel Corporation Source or drain structures with phosphorous and arsenic co-dopants
US20210091181A1 (en) * 2019-09-24 2021-03-25 Intel Corporation High aspect ration source or drain structures with abrupt dopant profile
US11804523B2 (en) * 2019-09-24 2023-10-31 Intel Corporation High aspect ratio source or drain structures with abrupt dopant profile
TWI864029B (zh) * 2019-09-24 2024-12-01 美商英特爾股份有限公司 具有陡摻雜物分佈的高深寬比源極或汲極結構
US12288808B2 (en) 2019-09-24 2025-04-29 Intel Corporation High aspect ratio source or drain structures with abrupt dopant profile

Also Published As

Publication number Publication date
DE2655998C2 (de) 1986-01-30
IT1070009B (it) 1985-03-25
US4070687A (en) 1978-01-24
FR2337428B1 (enExample) 1980-10-24
DE2655998A1 (de) 1977-07-14
JPS5283181A (en) 1977-07-11
FR2337428A1 (fr) 1977-07-29
CA1057418A (en) 1979-06-26

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19941125