CA1057418A - Composite channel field effect transistor and method of fabrication - Google Patents

Composite channel field effect transistor and method of fabrication

Info

Publication number
CA1057418A
CA1057418A CA268,530A CA268530A CA1057418A CA 1057418 A CA1057418 A CA 1057418A CA 268530 A CA268530 A CA 268530A CA 1057418 A CA1057418 A CA 1057418A
Authority
CA
Canada
Prior art keywords
regions
source
drain
region
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA268,530A
Other languages
English (en)
French (fr)
Inventor
Irving T. Ho
Jacob Riseman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of CA1057418A publication Critical patent/CA1057418A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/299—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations
    • H10D62/307—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations the doping variations being parallel to the channel lengths
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
CA268,530A 1975-12-31 1976-12-22 Composite channel field effect transistor and method of fabrication Expired CA1057418A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US64577175A 1975-12-31 1975-12-31

Publications (1)

Publication Number Publication Date
CA1057418A true CA1057418A (en) 1979-06-26

Family

ID=24590420

Family Applications (1)

Application Number Title Priority Date Filing Date
CA268,530A Expired CA1057418A (en) 1975-12-31 1976-12-22 Composite channel field effect transistor and method of fabrication

Country Status (7)

Country Link
US (1) US4070687A (enExample)
JP (1) JPS5283181A (enExample)
CA (1) CA1057418A (enExample)
DE (1) DE2655998C2 (enExample)
FR (1) FR2337428A1 (enExample)
GB (1) GB1569897A (enExample)
IT (1) IT1070009B (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4173791A (en) * 1977-09-16 1979-11-06 Fairchild Camera And Instrument Corporation Insulated gate field-effect transistor read-only memory array
US4212683A (en) * 1978-03-27 1980-07-15 Ncr Corporation Method for making narrow channel FET
US4485390A (en) * 1978-03-27 1984-11-27 Ncr Corporation Narrow channel FET
JPS54144183A (en) * 1978-05-01 1979-11-10 Handotai Kenkyu Shinkokai Insulated gate type electrostatic induction transistor and semiconductor integrated circuit
JPS5561069A (en) * 1978-10-31 1980-05-08 Fujitsu Ltd Manufacture of semiconductor device
US4282646A (en) * 1979-08-20 1981-08-11 International Business Machines Corporation Method of making a transistor array
US4329186A (en) * 1979-12-20 1982-05-11 Ibm Corporation Simultaneously forming fully implanted DMOS together with enhancement and depletion mode MOSFET devices
US4369072A (en) * 1981-01-22 1983-01-18 International Business Machines Corp. Method for forming IGFET devices having improved drain voltage characteristics
EP0069649B1 (en) * 1981-07-10 1989-04-19 FAIRCHILD CAMERA & INSTRUMENT CORPORATION Self-aligned antiblooming structure for charge-coupled devices and method of fabrication thereof
US5118631A (en) * 1981-07-10 1992-06-02 Loral Fairchild Corporation Self-aligned antiblooming structure for charge-coupled devices and method of fabrication thereof
JPS5833870A (ja) * 1981-08-24 1983-02-28 Hitachi Ltd 半導体装置
FR2529715A1 (fr) * 1982-07-01 1984-01-06 Commissariat Energie Atomique Procede d'optimisation du dopage dans un transistor mos
JPS59126674A (ja) * 1983-01-10 1984-07-21 Toshiba Corp 情報記憶用半導体装置
JPS62283667A (ja) * 1986-05-31 1987-12-09 Toshiba Corp 半導体装置の製造方法
JPS63119574A (ja) * 1986-11-07 1988-05-24 Toshiba Corp 半導体装置の製造方法
US4906588A (en) * 1988-06-23 1990-03-06 Dallas Semiconductor Corporation Enclosed buried channel transistor
US5122474A (en) * 1988-06-23 1992-06-16 Dallas Semiconductor Corporation Method of fabricating a CMOS IC with reduced susceptibility to PMOS punchthrough
US4943537A (en) * 1988-06-23 1990-07-24 Dallas Semiconductor Corporation CMOS integrated circuit with reduced susceptibility to PMOS punchthrough
EP0513415A1 (en) * 1991-05-16 1992-11-19 Kabushiki Kaisha Toshiba Insulated gate FET having double-layered wells of low and high impurity concentrations and method of manufacturing the same
JP3212150B2 (ja) * 1992-08-07 2001-09-25 株式会社日立製作所 半導体装置
JPH10214964A (ja) * 1997-01-30 1998-08-11 Oki Electric Ind Co Ltd Ｍｏｓｆｅｔ及びその製造方法
US11552169B2 (en) * 2019-03-27 2023-01-10 Intel Corporation Source or drain structures with phosphorous and arsenic co-dopants
US11804523B2 (en) * 2019-09-24 2023-10-31 Intel Corporation High aspect ratio source or drain structures with abrupt dopant profile

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1153428A (en) * 1965-06-18 1969-05-29 Philips Nv Improvements in Semiconductor Devices.
GB1316555A (enExample) * 1969-08-12 1973-05-09
US3806773A (en) * 1971-07-17 1974-04-23 Sony Corp Field effect transistor having back-to-back diodes connected to the gate electrode and having a protective layer between the source and the diodes to prevent thyristor action
US3877055A (en) * 1972-11-13 1975-04-08 Motorola Inc Semiconductor memory device
US3883372A (en) * 1973-07-11 1975-05-13 Westinghouse Electric Corp Method of making a planar graded channel MOS transistor
JPS571904B2 (enExample) * 1973-07-12 1982-01-13
JPS5036087A (enExample) * 1973-07-13 1975-04-04
US3996655A (en) * 1973-12-14 1976-12-14 Texas Instruments Incorporated Processes of forming insulated gate field effect transistors with channel lengths of one micron in integrated circuits with component isolated and product
US3909320A (en) * 1973-12-26 1975-09-30 Signetics Corp Method for forming MOS structure using double diffusion

Also Published As

Publication number Publication date
DE2655998C2 (de) 1986-01-30
IT1070009B (it) 1985-03-25
US4070687A (en) 1978-01-24
FR2337428B1 (enExample) 1980-10-24
DE2655998A1 (de) 1977-07-14
JPS5283181A (en) 1977-07-11
FR2337428A1 (fr) 1977-07-29
GB1569897A (en) 1980-06-25

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