GB1527095A - Storage arrangements - Google Patents

Storage arrangements

Info

Publication number
GB1527095A
GB1527095A GB46154/75A GB4615475A GB1527095A GB 1527095 A GB1527095 A GB 1527095A GB 46154/75 A GB46154/75 A GB 46154/75A GB 4615475 A GB4615475 A GB 4615475A GB 1527095 A GB1527095 A GB 1527095A
Authority
GB
United Kingdom
Prior art keywords
region
fet
type
drain
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB46154/75A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19742453319 external-priority patent/DE2453319A1/de
Priority claimed from DE19742453376 external-priority patent/DE2453376A1/de
Priority claimed from DE19742453421 external-priority patent/DE2453421A1/de
Priority claimed from DE19742453395 external-priority patent/DE2453395A1/de
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of GB1527095A publication Critical patent/GB1527095A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/3565—Bistables with hysteresis, e.g. Schmitt trigger
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/87—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of PN-junction gate FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
GB46154/75A 1974-11-11 1975-11-07 Storage arrangements Expired GB1527095A (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE19742453319 DE2453319A1 (de) 1973-09-28 1974-11-11 Anordnung mit zwei komplementaeren feldeffekttransistoren
DE19742453376 DE2453376A1 (de) 1973-09-28 1974-11-11 Anordnung mit zwei komplementaeren feldeffekttransistoren
DE19742453421 DE2453421A1 (de) 1973-09-28 1974-11-11 Anordnung mit zwei komplementaeren feldeffekttransistoren
DE19742453395 DE2453395A1 (de) 1973-09-28 1974-11-11 Anordnung mit zwei komplementaeren feldeffekttransistoren

Publications (1)

Publication Number Publication Date
GB1527095A true GB1527095A (en) 1978-10-04

Family

ID=27431908

Family Applications (1)

Application Number Title Priority Date Filing Date
GB46154/75A Expired GB1527095A (en) 1974-11-11 1975-11-07 Storage arrangements

Country Status (7)

Country Link
US (1) US4040082A (enExample)
JP (1) JPS5171073A (enExample)
BE (1) BE835428A (enExample)
FR (1) FR2290759A1 (enExample)
GB (1) GB1527095A (enExample)
IT (1) IT1044690B (enExample)
NL (1) NL7513192A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2224160A (en) * 1988-10-24 1990-04-25 Marconi Instruments Ltd Integrated semiconductor circuits

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52153630A (en) * 1976-06-16 1977-12-20 Matsushita Electric Ind Co Ltd Semiconductor memory device
DE2638086A1 (de) * 1976-08-24 1978-03-02 Siemens Ag Integrierte stromversorgung
US4320312A (en) * 1978-10-02 1982-03-16 Hewlett-Packard Company Smaller memory cells and logic circuits
JPS5950562A (ja) * 1982-09-17 1984-03-23 Toshiba Corp 半導体装置
EP0232083B1 (en) * 1986-01-24 1995-04-19 Canon Kabushiki Kaisha Photoelectric conversion device
US5068756A (en) * 1989-02-16 1991-11-26 Texas Instruments Incorporated Integrated circuit composed of group III-V compound field effect and bipolar semiconductors
US7569873B2 (en) * 2005-10-28 2009-08-04 Dsm Solutions, Inc. Integrated circuit using complementary junction field effect transistor and MOS transistor in silicon and silicon alloys
US7592841B2 (en) * 2006-05-11 2009-09-22 Dsm Solutions, Inc. Circuit configurations having four terminal JFET devices
US7646233B2 (en) * 2006-05-11 2010-01-12 Dsm Solutions, Inc. Level shifting circuit having junction field effect transistors
US7525163B2 (en) * 2006-10-31 2009-04-28 Dsm Solutions, Inc. Semiconductor device, design method and structure
US20080099796A1 (en) * 2006-11-01 2008-05-01 Vora Madhukar B Device with patterned semiconductor electrode structure and method of manufacture
US20080237657A1 (en) * 2007-03-26 2008-10-02 Dsm Solution, Inc. Signaling circuit and method for integrated circuit devices and systems
US7727821B2 (en) * 2007-05-01 2010-06-01 Suvolta, Inc. Image sensing cell, device, method of operation, and method of manufacture
US7729149B2 (en) * 2007-05-01 2010-06-01 Suvolta, Inc. Content addressable memory cell including a junction field effect transistor
US7692220B2 (en) * 2007-05-01 2010-04-06 Suvolta, Inc. Semiconductor device storage cell structure, method of operation, and method of manufacture
US20090168508A1 (en) * 2007-12-31 2009-07-02 Dsm Solutions, Inc. Static random access memory having cells with junction field effect and bipolar junction transistors
US7710148B2 (en) * 2008-06-02 2010-05-04 Suvolta, Inc. Programmable switch circuit and method, method of manufacture, and devices and systems including the same
WO2024092406A1 (zh) * 2022-10-31 2024-05-10 北京大学 互补光电晶体管像素单元、感算阵列结构及其操作方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3461361A (en) * 1966-02-24 1969-08-12 Rca Corp Complementary mos transistor integrated circuits with inversion layer formed by ionic discharge bombardment
US3514676A (en) * 1967-10-25 1970-05-26 North American Rockwell Insulated gate complementary field effect transistors gate structure
US3767984A (en) * 1969-09-03 1973-10-23 Nippon Electric Co Schottky barrier type field effect transistor
US3846766A (en) * 1971-03-25 1974-11-05 Tokyo Shibaura Electric Co Associative memories including mos transistors
JPS5431671B2 (enExample) * 1973-03-14 1979-10-08

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2224160A (en) * 1988-10-24 1990-04-25 Marconi Instruments Ltd Integrated semiconductor circuits

Also Published As

Publication number Publication date
US4040082A (en) 1977-08-02
FR2290759B1 (enExample) 1978-06-30
JPS5171073A (en) 1976-06-19
BE835428A (fr) 1976-03-01
NL7513192A (nl) 1976-05-13
FR2290759A1 (fr) 1976-06-04
IT1044690B (it) 1980-04-21

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]