FR2290759A1 - Dispositif comportant deux transistors a effet de champ complementaires - Google Patents
Dispositif comportant deux transistors a effet de champ complementairesInfo
- Publication number
- FR2290759A1 FR2290759A1 FR7533820A FR7533820A FR2290759A1 FR 2290759 A1 FR2290759 A1 FR 2290759A1 FR 7533820 A FR7533820 A FR 7533820A FR 7533820 A FR7533820 A FR 7533820A FR 2290759 A1 FR2290759 A1 FR 2290759A1
- Authority
- FR
- France
- Prior art keywords
- effect transistors
- device containing
- complementary field
- complementary
- field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000000295 complement effect Effects 0.000 title 1
- 230000005669 field effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
- H03K3/3565—Bistables with hysteresis, e.g. Schmitt trigger
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/098—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being PN junction gate field-effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Memories (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19742453376 DE2453376A1 (de) | 1973-09-28 | 1974-11-11 | Anordnung mit zwei komplementaeren feldeffekttransistoren |
DE19742453319 DE2453319A1 (de) | 1973-09-28 | 1974-11-11 | Anordnung mit zwei komplementaeren feldeffekttransistoren |
DE19742453421 DE2453421A1 (de) | 1973-09-28 | 1974-11-11 | Anordnung mit zwei komplementaeren feldeffekttransistoren |
DE19742453395 DE2453395A1 (de) | 1973-09-28 | 1974-11-11 | Anordnung mit zwei komplementaeren feldeffekttransistoren |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2290759A1 true FR2290759A1 (fr) | 1976-06-04 |
FR2290759B1 FR2290759B1 (fr) | 1978-06-30 |
Family
ID=27431908
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7533820A Granted FR2290759A1 (fr) | 1974-11-11 | 1975-11-05 | Dispositif comportant deux transistors a effet de champ complementaires |
Country Status (7)
Country | Link |
---|---|
US (1) | US4040082A (fr) |
JP (1) | JPS5171073A (fr) |
BE (1) | BE835428A (fr) |
FR (1) | FR2290759A1 (fr) |
GB (1) | GB1527095A (fr) |
IT (1) | IT1044690B (fr) |
NL (1) | NL7513192A (fr) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52153630A (en) * | 1976-06-16 | 1977-12-20 | Matsushita Electric Ind Co Ltd | Semiconductor memory device |
DE2638086A1 (de) * | 1976-08-24 | 1978-03-02 | Siemens Ag | Integrierte stromversorgung |
US4320312A (en) * | 1978-10-02 | 1982-03-16 | Hewlett-Packard Company | Smaller memory cells and logic circuits |
JPS5950562A (ja) * | 1982-09-17 | 1984-03-23 | Toshiba Corp | 半導体装置 |
EP0232083B1 (fr) * | 1986-01-24 | 1995-04-19 | Canon Kabushiki Kaisha | Dispositif de conversion photoélectrique |
GB2224160A (en) * | 1988-10-24 | 1990-04-25 | Marconi Instruments Ltd | Integrated semiconductor circuits |
US5068756A (en) * | 1989-02-16 | 1991-11-26 | Texas Instruments Incorporated | Integrated circuit composed of group III-V compound field effect and bipolar semiconductors |
US7569873B2 (en) * | 2005-10-28 | 2009-08-04 | Dsm Solutions, Inc. | Integrated circuit using complementary junction field effect transistor and MOS transistor in silicon and silicon alloys |
US7592841B2 (en) * | 2006-05-11 | 2009-09-22 | Dsm Solutions, Inc. | Circuit configurations having four terminal JFET devices |
US7646233B2 (en) * | 2006-05-11 | 2010-01-12 | Dsm Solutions, Inc. | Level shifting circuit having junction field effect transistors |
US7525163B2 (en) * | 2006-10-31 | 2009-04-28 | Dsm Solutions, Inc. | Semiconductor device, design method and structure |
US20080099796A1 (en) * | 2006-11-01 | 2008-05-01 | Vora Madhukar B | Device with patterned semiconductor electrode structure and method of manufacture |
US20080237657A1 (en) * | 2007-03-26 | 2008-10-02 | Dsm Solution, Inc. | Signaling circuit and method for integrated circuit devices and systems |
US7692220B2 (en) * | 2007-05-01 | 2010-04-06 | Suvolta, Inc. | Semiconductor device storage cell structure, method of operation, and method of manufacture |
US7729149B2 (en) * | 2007-05-01 | 2010-06-01 | Suvolta, Inc. | Content addressable memory cell including a junction field effect transistor |
US7727821B2 (en) * | 2007-05-01 | 2010-06-01 | Suvolta, Inc. | Image sensing cell, device, method of operation, and method of manufacture |
US20090168508A1 (en) * | 2007-12-31 | 2009-07-02 | Dsm Solutions, Inc. | Static random access memory having cells with junction field effect and bipolar junction transistors |
US7710148B2 (en) * | 2008-06-02 | 2010-05-04 | Suvolta, Inc. | Programmable switch circuit and method, method of manufacture, and devices and systems including the same |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3461361A (en) * | 1966-02-24 | 1969-08-12 | Rca Corp | Complementary mos transistor integrated circuits with inversion layer formed by ionic discharge bombardment |
US3514676A (en) * | 1967-10-25 | 1970-05-26 | North American Rockwell | Insulated gate complementary field effect transistors gate structure |
US3767984A (en) * | 1969-09-03 | 1973-10-23 | Nippon Electric Co | Schottky barrier type field effect transistor |
US3846766A (en) * | 1971-03-25 | 1974-11-05 | Tokyo Shibaura Electric Co | Associative memories including mos transistors |
JPS5431671B2 (fr) * | 1973-03-14 | 1979-10-08 |
-
1975
- 1975-10-30 IT IT28824/75A patent/IT1044690B/it active
- 1975-11-05 FR FR7533820A patent/FR2290759A1/fr active Granted
- 1975-11-06 US US05/629,394 patent/US4040082A/en not_active Expired - Lifetime
- 1975-11-07 GB GB46154/75A patent/GB1527095A/en not_active Expired
- 1975-11-10 BE BE161739A patent/BE835428A/fr unknown
- 1975-11-11 NL NL7513192A patent/NL7513192A/xx not_active Application Discontinuation
- 1975-11-11 JP JP50135599A patent/JPS5171073A/ja active Pending
Non-Patent Citations (1)
Title |
---|
NEANT * |
Also Published As
Publication number | Publication date |
---|---|
GB1527095A (en) | 1978-10-04 |
FR2290759B1 (fr) | 1978-06-30 |
US4040082A (en) | 1977-08-02 |
NL7513192A (nl) | 1976-05-13 |
IT1044690B (it) | 1980-04-21 |
JPS5171073A (en) | 1976-06-19 |
BE835428A (fr) | 1976-03-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |