FR2290759B1 - - Google Patents

Info

Publication number
FR2290759B1
FR2290759B1 FR7533820A FR7533820A FR2290759B1 FR 2290759 B1 FR2290759 B1 FR 2290759B1 FR 7533820 A FR7533820 A FR 7533820A FR 7533820 A FR7533820 A FR 7533820A FR 2290759 B1 FR2290759 B1 FR 2290759B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7533820A
Other languages
French (fr)
Other versions
FR2290759A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19742453319 external-priority patent/DE2453319A1/de
Priority claimed from DE19742453376 external-priority patent/DE2453376A1/de
Priority claimed from DE19742453395 external-priority patent/DE2453395A1/de
Priority claimed from DE19742453421 external-priority patent/DE2453421A1/de
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of FR2290759A1 publication Critical patent/FR2290759A1/fr
Application granted granted Critical
Publication of FR2290759B1 publication Critical patent/FR2290759B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/3565—Bistables with hysteresis, e.g. Schmitt trigger
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/87—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of PN-junction gate FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
FR7533820A 1974-11-11 1975-11-05 Dispositif comportant deux transistors a effet de champ complementaires Granted FR2290759A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE19742453319 DE2453319A1 (de) 1973-09-28 1974-11-11 Anordnung mit zwei komplementaeren feldeffekttransistoren
DE19742453376 DE2453376A1 (de) 1973-09-28 1974-11-11 Anordnung mit zwei komplementaeren feldeffekttransistoren
DE19742453395 DE2453395A1 (de) 1973-09-28 1974-11-11 Anordnung mit zwei komplementaeren feldeffekttransistoren
DE19742453421 DE2453421A1 (de) 1973-09-28 1974-11-11 Anordnung mit zwei komplementaeren feldeffekttransistoren

Publications (2)

Publication Number Publication Date
FR2290759A1 FR2290759A1 (fr) 1976-06-04
FR2290759B1 true FR2290759B1 (enExample) 1978-06-30

Family

ID=27431908

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7533820A Granted FR2290759A1 (fr) 1974-11-11 1975-11-05 Dispositif comportant deux transistors a effet de champ complementaires

Country Status (7)

Country Link
US (1) US4040082A (enExample)
JP (1) JPS5171073A (enExample)
BE (1) BE835428A (enExample)
FR (1) FR2290759A1 (enExample)
GB (1) GB1527095A (enExample)
IT (1) IT1044690B (enExample)
NL (1) NL7513192A (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52153630A (en) * 1976-06-16 1977-12-20 Matsushita Electric Ind Co Ltd Semiconductor memory device
DE2638086A1 (de) * 1976-08-24 1978-03-02 Siemens Ag Integrierte stromversorgung
US4320312A (en) * 1978-10-02 1982-03-16 Hewlett-Packard Company Smaller memory cells and logic circuits
JPS5950562A (ja) * 1982-09-17 1984-03-23 Toshiba Corp 半導体装置
DE3751242T2 (de) * 1986-01-24 1995-09-14 Canon Kk Photoelektrischer Wandler.
GB2224160A (en) * 1988-10-24 1990-04-25 Marconi Instruments Ltd Integrated semiconductor circuits
US5068756A (en) * 1989-02-16 1991-11-26 Texas Instruments Incorporated Integrated circuit composed of group III-V compound field effect and bipolar semiconductors
US7592841B2 (en) * 2006-05-11 2009-09-22 Dsm Solutions, Inc. Circuit configurations having four terminal JFET devices
US7569873B2 (en) * 2005-10-28 2009-08-04 Dsm Solutions, Inc. Integrated circuit using complementary junction field effect transistor and MOS transistor in silicon and silicon alloys
US7646233B2 (en) * 2006-05-11 2010-01-12 Dsm Solutions, Inc. Level shifting circuit having junction field effect transistors
US7525163B2 (en) * 2006-10-31 2009-04-28 Dsm Solutions, Inc. Semiconductor device, design method and structure
US20080099796A1 (en) * 2006-11-01 2008-05-01 Vora Madhukar B Device with patterned semiconductor electrode structure and method of manufacture
US20080237657A1 (en) * 2007-03-26 2008-10-02 Dsm Solution, Inc. Signaling circuit and method for integrated circuit devices and systems
US7729149B2 (en) * 2007-05-01 2010-06-01 Suvolta, Inc. Content addressable memory cell including a junction field effect transistor
US7692220B2 (en) * 2007-05-01 2010-04-06 Suvolta, Inc. Semiconductor device storage cell structure, method of operation, and method of manufacture
US7727821B2 (en) * 2007-05-01 2010-06-01 Suvolta, Inc. Image sensing cell, device, method of operation, and method of manufacture
US20090168508A1 (en) * 2007-12-31 2009-07-02 Dsm Solutions, Inc. Static random access memory having cells with junction field effect and bipolar junction transistors
US7710148B2 (en) * 2008-06-02 2010-05-04 Suvolta, Inc. Programmable switch circuit and method, method of manufacture, and devices and systems including the same

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3461361A (en) * 1966-02-24 1969-08-12 Rca Corp Complementary mos transistor integrated circuits with inversion layer formed by ionic discharge bombardment
US3514676A (en) * 1967-10-25 1970-05-26 North American Rockwell Insulated gate complementary field effect transistors gate structure
US3767984A (en) * 1969-09-03 1973-10-23 Nippon Electric Co Schottky barrier type field effect transistor
US3846766A (en) * 1971-03-25 1974-11-05 Tokyo Shibaura Electric Co Associative memories including mos transistors
JPS5431671B2 (enExample) * 1973-03-14 1979-10-08

Also Published As

Publication number Publication date
US4040082A (en) 1977-08-02
NL7513192A (nl) 1976-05-13
JPS5171073A (en) 1976-06-19
FR2290759A1 (fr) 1976-06-04
IT1044690B (it) 1980-04-21
GB1527095A (en) 1978-10-04
BE835428A (fr) 1976-03-01

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Legal Events

Date Code Title Description
ST Notification of lapse