GB1226080A - - Google Patents

Info

Publication number
GB1226080A
GB1226080A GB1226080DA GB1226080A GB 1226080 A GB1226080 A GB 1226080A GB 1226080D A GB1226080D A GB 1226080DA GB 1226080 A GB1226080 A GB 1226080A
Authority
GB
United Kingdom
Prior art keywords
type
region
source
island
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of GB1226080A publication Critical patent/GB1226080A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • A—HUMAN NECESSITIES
    • A45—HAND OR TRAVELLING ARTICLES
    • A45C—PURSES; LUGGAGE; HAND CARRIED BAGS
    • A45C15/00—Purses, bags, luggage or other receptacles covered by groups A45C1/00 - A45C11/00, combined with other objects or articles
    • A45C15/04—Purses, bags, luggage or other receptacles covered by groups A45C1/00 - A45C11/00, combined with other objects or articles with mirrors
    • A—HUMAN NECESSITIES
    • A45—HAND OR TRAVELLING ARTICLES
    • A45C—PURSES; LUGGAGE; HAND CARRIED BAGS
    • A45C3/00—Flexible luggage; Handbags
    • A45C3/10—Beach-bags; Watertight beach-bags
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6708—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing the kink effect or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect
    • H10D30/6711—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing the kink effect or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect by using electrodes contacting the supplementary regions or layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P32/00—
    • H10P95/00—

Landscapes

  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
GB1226080D 1967-11-28 1968-09-18 Expired GB1226080A (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US68864867A 1967-11-28 1967-11-28

Publications (1)

Publication Number Publication Date
GB1226080A true GB1226080A (enExample) 1971-03-24

Family

ID=24765208

Family Applications (2)

Application Number Title Priority Date Filing Date
GB44418/68A Expired GB1224335A (en) 1967-11-28 1968-09-18 N-channel field effect transistor
GB1226080D Expired GB1226080A (enExample) 1967-11-28 1968-09-18

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB44418/68A Expired GB1224335A (en) 1967-11-28 1968-09-18 N-channel field effect transistor

Country Status (3)

Country Link
DE (1) DE1811492A1 (enExample)
GB (2) GB1224335A (enExample)
NL (1) NL6815161A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2127216A (en) * 1979-07-31 1984-04-04 Sharp Kk Improved structure of thin film transistors and manufacture method thereof

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5024084A (enExample) * 1973-07-05 1975-03-14
US4053916A (en) * 1975-09-04 1977-10-11 Westinghouse Electric Corporation Silicon on sapphire MOS transistor
US4078947A (en) * 1976-08-05 1978-03-14 International Business Machines Corporation Method for forming a narrow channel length MOS field effect transistor
JPS5553462A (en) * 1978-10-13 1980-04-18 Int Rectifier Corp Mosfet element
US5191396B1 (en) * 1978-10-13 1995-12-26 Int Rectifier Corp High power mosfet with low on-resistance and high breakdown voltage
US5130767C1 (en) * 1979-05-14 2001-08-14 Int Rectifier Corp Plural polygon source pattern for mosfet
JPS5799777A (en) * 1980-12-12 1982-06-21 Toshiba Corp Metal oxide semiconductor type semiconductor device
JPS5998557A (ja) * 1982-11-27 1984-06-06 Nissan Motor Co Ltd Ｍｏｓトランジスタ
DE3370245D1 (de) * 1982-11-27 1987-04-16 Nissan Motor A mos transistor
GB8400336D0 (en) * 1984-01-06 1984-02-08 Texas Instruments Ltd Field effect transistors
JPS62274767A (ja) * 1986-05-23 1987-11-28 Fujitsu Ltd 高耐圧半導体装置及びその製造方法
JP3231345B2 (ja) * 1991-03-08 2001-11-19 株式会社日立製作所 半導体記憶装置及びその製造方法
US5798287A (en) * 1993-12-24 1998-08-25 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Method for forming a power MOS device chip
DE69321966T2 (de) * 1993-12-24 1999-06-02 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania Leistungs-Halbleiterbauelement
EP0660396B1 (en) * 1993-12-24 1998-11-04 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno Power MOS device chip and package assembly
EP0697728B1 (en) * 1994-08-02 1999-04-21 STMicroelectronics S.r.l. MOS-technology power device chip and package assembly
US5869371A (en) * 1995-06-07 1999-02-09 Stmicroelectronics, Inc. Structure and process for reducing the on-resistance of mos-gated power devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2127216A (en) * 1979-07-31 1984-04-04 Sharp Kk Improved structure of thin film transistors and manufacture method thereof

Also Published As

Publication number Publication date
NL6815161A (enExample) 1969-05-30
DE1811492A1 (de) 1969-08-07
GB1224335A (en) 1971-03-10

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees