GB1520921A - Semiconductor devices - Google Patents

Semiconductor devices

Info

Publication number
GB1520921A
GB1520921A GB33404/75A GB3340475A GB1520921A GB 1520921 A GB1520921 A GB 1520921A GB 33404/75 A GB33404/75 A GB 33404/75A GB 3340475 A GB3340475 A GB 3340475A GB 1520921 A GB1520921 A GB 1520921A
Authority
GB
United Kingdom
Prior art keywords
junction
region
substrate
aug
breakdown voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB33404/75A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of GB1520921A publication Critical patent/GB1520921A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thyristors (AREA)
GB33404/75A 1974-08-19 1975-08-11 Semiconductor devices Expired GB1520921A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9482074A JPS573225B2 (https=) 1974-08-19 1974-08-19

Publications (1)

Publication Number Publication Date
GB1520921A true GB1520921A (en) 1978-08-09

Family

ID=14120681

Family Applications (1)

Application Number Title Priority Date Filing Date
GB33404/75A Expired GB1520921A (en) 1974-08-19 1975-08-11 Semiconductor devices

Country Status (7)

Country Link
US (1) US4024564A (https=)
JP (1) JPS573225B2 (https=)
CA (1) CA1037160A (https=)
DE (1) DE2536277A1 (https=)
FR (1) FR2282723A1 (https=)
GB (1) GB1520921A (https=)
NL (1) NL7509859A (https=)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2846637A1 (de) * 1978-10-11 1980-04-30 Bbc Brown Boveri & Cie Halbleiterbauelement mit mindestens einem planaren pn-uebergang und zonen- guard-ringen
JPS5779665A (en) * 1980-11-05 1982-05-18 Toshiba Corp Semiconductor controlled rectifier element
DE3117804A1 (de) * 1981-05-06 1982-11-25 Robert Bosch Gmbh, 7000 Stuttgart "planare transistorstruktur"
DE3141203A1 (de) * 1981-10-16 1983-04-28 Siemens AG, 1000 Berlin und 8000 München Planares halbleiterbauelement
DE3142616A1 (de) * 1981-10-28 1983-05-05 Robert Bosch Gmbh, 7000 Stuttgart "planare transistorstruktur"
DE3276091D1 (en) * 1981-12-24 1987-05-21 Nippon Denso Co Semiconductor device including overvoltage protection diode
JPS58111369A (ja) * 1981-12-24 1983-07-02 Nippon Denso Co Ltd 半導体装置
JPS58134467A (ja) * 1982-02-05 1983-08-10 Nippon Denso Co Ltd 半導体装置
JPS58223345A (ja) * 1982-06-21 1983-12-24 Toshiba Corp 半導体装置
JPS5963766A (ja) * 1982-10-04 1984-04-11 Mitsubishi Electric Corp 半導体メモリ装置
JPS5976466A (ja) * 1982-10-25 1984-05-01 Mitsubishi Electric Corp プレ−ナ形半導体装置
US4531055A (en) * 1983-01-05 1985-07-23 The United States Of America As Represented By The Secretary Of The Air Force Self-guarding Schottky barrier infrared detector array
GB2134705B (en) * 1983-01-28 1985-12-24 Philips Electronic Associated Semiconductor devices
US4824797A (en) * 1985-10-31 1989-04-25 International Business Machines Corporation Self-aligned channel stop
JP2633545B2 (ja) * 1987-02-09 1997-07-23 株式会社東芝 高耐圧プレーナ型半導体素子
JPS63207178A (ja) * 1987-02-23 1988-08-26 Nec Corp プレ−ナ型高耐圧サイリスタ
JPH02260538A (ja) * 1989-03-31 1990-10-23 Fujitsu Ltd 半導体装置
JPH03280071A (ja) * 1990-03-29 1991-12-11 Konica Corp 印刷版の形成方法
JPH06204236A (ja) * 1992-12-28 1994-07-22 Canon Inc 半導体装置、半導体製造装置、集積回路、半導体装置の製造方法および半導体製造方法
DE10217935B4 (de) * 2001-04-23 2007-06-28 Fuji Electric Co., Ltd., Kawasaki Halbleiterbauteil
JP2003069045A (ja) * 2001-08-22 2003-03-07 Mitsubishi Electric Corp 半導体装置
US20070215873A1 (en) * 2004-10-12 2007-09-20 Guy Silver Near natural breakdown device
US20080097069A1 (en) * 2006-10-20 2008-04-24 Hua Guo Poly(arylene ether) method and composition
US9653617B2 (en) 2015-05-27 2017-05-16 Sandisk Technologies Llc Multiple junction thin film transistor
KR102226206B1 (ko) * 2020-02-06 2021-03-11 포항공과대학교 산학협력단 이중 pn 접합을 포함하는 메모리 소자 및 그 구동방법

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL282779A (https=) * 1961-09-08
NL154061B (nl) * 1967-11-04 1977-07-15 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting en halfgeleiderinrichting vervaardigd met behulp van de werkwijze.
NL6904543A (https=) * 1969-03-25 1970-09-29
NL6904619A (https=) * 1969-03-25 1970-09-29
GB1311748A (en) * 1969-06-21 1973-03-28 Licentia Gmbh Semiconductor device
NL161304C (nl) * 1969-07-01 1980-01-15 Philips Nv Halfgeleiderinrichting met een laagvormig gebied en een door een isolerendelaag van het laagvormig gebied gescheiden elektrodelaag, zodat bij het aanleggen van een geschikte potentiaal op de elektrodelaag in het laagvormig gebied een uitputtingszone wordt gevormd.
US3601668A (en) * 1969-11-07 1971-08-24 Fairchild Camera Instr Co Surface depletion layer photodevice
DE2006729C3 (de) * 1970-02-13 1980-02-14 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung einer Halbleiterdiode
US3751722A (en) * 1971-04-30 1973-08-07 Standard Microsyst Smc Mos integrated circuit with substrate containing selectively formed resistivity regions
US3684933A (en) * 1971-06-21 1972-08-15 Itt Semiconductor device showing at least three successive zones of alternate opposite conductivity type

Also Published As

Publication number Publication date
US4024564A (en) 1977-05-17
DE2536277A1 (de) 1976-03-04
NL7509859A (nl) 1976-02-23
JPS5122379A (https=) 1976-02-23
JPS573225B2 (https=) 1982-01-20
FR2282723B1 (https=) 1979-02-02
CA1037160A (en) 1978-08-22
FR2282723A1 (fr) 1976-03-19

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19930811