GB1515318A - Diffusion-doping semiconductors - Google Patents

Diffusion-doping semiconductors

Info

Publication number
GB1515318A
GB1515318A GB37645/75A GB3764575A GB1515318A GB 1515318 A GB1515318 A GB 1515318A GB 37645/75 A GB37645/75 A GB 37645/75A GB 3764575 A GB3764575 A GB 3764575A GB 1515318 A GB1515318 A GB 1515318A
Authority
GB
United Kingdom
Prior art keywords
chamber
exhaust passage
source
semi
flushing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB37645/75A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Publication of GB1515318A publication Critical patent/GB1515318A/en
Expired legal-status Critical Current

Links

Classifications

    • H10P95/00—
    • H10P32/12—
    • H10P32/171—
GB37645/75A 1974-09-16 1975-09-12 Diffusion-doping semiconductors Expired GB1515318A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7431243A FR2284982A1 (fr) 1974-09-16 1974-09-16 Procede de diffusion d'impuretes dans des corps semiconducteurs

Publications (1)

Publication Number Publication Date
GB1515318A true GB1515318A (en) 1978-06-21

Family

ID=9143118

Family Applications (1)

Application Number Title Priority Date Filing Date
GB37645/75A Expired GB1515318A (en) 1974-09-16 1975-09-12 Diffusion-doping semiconductors

Country Status (5)

Country Link
JP (1) JPS5238388B2 (enExample)
CA (1) CA1061225A (enExample)
DE (1) DE2540053C2 (enExample)
FR (1) FR2284982A1 (enExample)
GB (1) GB1515318A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114855261A (zh) * 2022-03-21 2022-08-05 西北工业大学 一种基于水平梯度凝固法生长化合物半导体单晶的气相掺杂方法

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5742008Y2 (enExample) * 1976-10-08 1982-09-16
FR2409791A1 (fr) * 1977-11-25 1979-06-22 Silicium Semiconducteur Ssc Appareils de dopage par diffusion de tranches semi-conductrices
FR2479278A1 (fr) * 1980-03-26 1981-10-02 Loic Henry Procede de diffusion d'impuretes dans un semiconducteur et dispositif pour la mise en oeuvre de ce procede
JPS60236471A (ja) * 1984-05-10 1985-11-25 新光電気工業株式会社 気密ガラス端子
JP2662318B2 (ja) * 1991-03-13 1997-10-08 株式会社日立製作所 半導体基体への不純物の拡散方法
WO2023121228A1 (ko) * 2021-12-20 2023-06-29 주식회사 에이치피에스피 웨이퍼의 박막에 대한 탄소 도핑 방법

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2178751B1 (enExample) * 1972-04-05 1974-10-18 Radiotechnique Compelec

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114855261A (zh) * 2022-03-21 2022-08-05 西北工业大学 一种基于水平梯度凝固法生长化合物半导体单晶的气相掺杂方法

Also Published As

Publication number Publication date
DE2540053A1 (de) 1976-03-25
FR2284982A1 (fr) 1976-04-09
JPS5238388B2 (enExample) 1977-09-28
FR2284982B1 (enExample) 1979-02-16
CA1061225A (en) 1979-08-28
JPS5164371A (enExample) 1976-06-03
DE2540053C2 (de) 1983-12-01

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee