FR2284982A1 - Procede de diffusion d'impuretes dans des corps semiconducteurs - Google Patents

Procede de diffusion d'impuretes dans des corps semiconducteurs

Info

Publication number
FR2284982A1
FR2284982A1 FR7431243A FR7431243A FR2284982A1 FR 2284982 A1 FR2284982 A1 FR 2284982A1 FR 7431243 A FR7431243 A FR 7431243A FR 7431243 A FR7431243 A FR 7431243A FR 2284982 A1 FR2284982 A1 FR 2284982A1
Authority
FR
France
Prior art keywords
impurities
diffusion
semiconductor bodies
bodies
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7431243A
Other languages
English (en)
French (fr)
Other versions
FR2284982B1 (enExample
Inventor
Norbert Sirot
Robert Thevenon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7431243A priority Critical patent/FR2284982A1/fr
Priority to DE2540053A priority patent/DE2540053C2/de
Priority to CA235,393A priority patent/CA1061225A/en
Priority to GB37645/75A priority patent/GB1515318A/en
Priority to JP50110532A priority patent/JPS5238388B2/ja
Publication of FR2284982A1 publication Critical patent/FR2284982A1/fr
Priority to US05/801,925 priority patent/US4124417A/en
Application granted granted Critical
Publication of FR2284982B1 publication Critical patent/FR2284982B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H10P95/00—
    • H10P32/12—
    • H10P32/171—
FR7431243A 1974-09-16 1974-09-16 Procede de diffusion d'impuretes dans des corps semiconducteurs Granted FR2284982A1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR7431243A FR2284982A1 (fr) 1974-09-16 1974-09-16 Procede de diffusion d'impuretes dans des corps semiconducteurs
DE2540053A DE2540053C2 (de) 1974-09-16 1975-09-09 Verfahren zum Dotieren von III/V-Halbleiterkörpern
CA235,393A CA1061225A (en) 1974-09-16 1975-09-11 Method of diffusing impurities in semiconductor bodies
GB37645/75A GB1515318A (en) 1974-09-16 1975-09-12 Diffusion-doping semiconductors
JP50110532A JPS5238388B2 (enExample) 1974-09-16 1975-09-13
US05/801,925 US4124417A (en) 1974-09-16 1977-05-31 Method of diffusing impurities in semiconductor bodies

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7431243A FR2284982A1 (fr) 1974-09-16 1974-09-16 Procede de diffusion d'impuretes dans des corps semiconducteurs

Publications (2)

Publication Number Publication Date
FR2284982A1 true FR2284982A1 (fr) 1976-04-09
FR2284982B1 FR2284982B1 (enExample) 1979-02-16

Family

ID=9143118

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7431243A Granted FR2284982A1 (fr) 1974-09-16 1974-09-16 Procede de diffusion d'impuretes dans des corps semiconducteurs

Country Status (5)

Country Link
JP (1) JPS5238388B2 (enExample)
CA (1) CA1061225A (enExample)
DE (1) DE2540053C2 (enExample)
FR (1) FR2284982A1 (enExample)
GB (1) GB1515318A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2409791A1 (fr) * 1977-11-25 1979-06-22 Silicium Semiconducteur Ssc Appareils de dopage par diffusion de tranches semi-conductrices
FR2479278A1 (fr) * 1980-03-26 1981-10-02 Loic Henry Procede de diffusion d'impuretes dans un semiconducteur et dispositif pour la mise en oeuvre de ce procede

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5742008Y2 (enExample) * 1976-10-08 1982-09-16
JPS60236471A (ja) * 1984-05-10 1985-11-25 新光電気工業株式会社 気密ガラス端子
JP2662318B2 (ja) * 1991-03-13 1997-10-08 株式会社日立製作所 半導体基体への不純物の拡散方法
WO2023121228A1 (ko) * 2021-12-20 2023-06-29 주식회사 에이치피에스피 웨이퍼의 박막에 대한 탄소 도핑 방법
CN114855261B (zh) * 2022-03-21 2025-01-24 西北工业大学 一种基于水平梯度凝固法生长化合物半导体单晶的气相掺杂方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2178751B1 (enExample) * 1972-04-05 1974-10-18 Radiotechnique Compelec

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NEANT *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2409791A1 (fr) * 1977-11-25 1979-06-22 Silicium Semiconducteur Ssc Appareils de dopage par diffusion de tranches semi-conductrices
FR2479278A1 (fr) * 1980-03-26 1981-10-02 Loic Henry Procede de diffusion d'impuretes dans un semiconducteur et dispositif pour la mise en oeuvre de ce procede

Also Published As

Publication number Publication date
DE2540053A1 (de) 1976-03-25
GB1515318A (en) 1978-06-21
JPS5238388B2 (enExample) 1977-09-28
FR2284982B1 (enExample) 1979-02-16
CA1061225A (en) 1979-08-28
JPS5164371A (enExample) 1976-06-03
DE2540053C2 (de) 1983-12-01

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Legal Events

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CD Change of name or company name
ST Notification of lapse