BE810943A - Procede de diffusion d'impuretes dans un semi-conducteur - Google Patents
Procede de diffusion d'impuretes dans un semi-conducteurInfo
- Publication number
- BE810943A BE810943A BE140829A BE140829A BE810943A BE 810943 A BE810943 A BE 810943A BE 140829 A BE140829 A BE 140829A BE 140829 A BE140829 A BE 140829A BE 810943 A BE810943 A BE 810943A
- Authority
- BE
- Belgium
- Prior art keywords
- impurities
- diffusion
- semiconductor
- Prior art date
Links
- 238000009792 diffusion process Methods 0.000 title 1
- 239000012535 impurity Substances 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/033—Diffusion of aluminum
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Crystallography & Structural Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US331740A US3895975A (en) | 1973-02-13 | 1973-02-13 | Method for the post-alloy diffusion of impurities into a semiconductor |
Publications (1)
Publication Number | Publication Date |
---|---|
BE810943A true BE810943A (fr) | 1974-08-13 |
Family
ID=23295183
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE140829A BE810943A (fr) | 1973-02-13 | 1974-02-13 | Procede de diffusion d'impuretes dans un semi-conducteur |
Country Status (10)
Country | Link |
---|---|
US (1) | US3895975A (fr) |
JP (1) | JPS49114889A (fr) |
BE (1) | BE810943A (fr) |
CA (1) | CA1016848A (fr) |
DE (1) | DE2405935C2 (fr) |
FR (1) | FR2335040A1 (fr) |
GB (1) | GB1452637A (fr) |
IT (1) | IT1004927B (fr) |
NL (1) | NL7401992A (fr) |
SE (1) | SE391607B (fr) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5821434B2 (ja) * | 1974-09-24 | 1983-04-30 | ソニー株式会社 | タイヨウデンチ |
US4137095A (en) * | 1976-07-14 | 1979-01-30 | Solarex Corporation | Constant voltage solar cell and method of making same |
US4349691A (en) * | 1977-04-05 | 1982-09-14 | Solarex Corporation | Method of making constant voltage solar cell and product formed thereby utilizing low-temperature aluminum diffusion |
JPS5833693B2 (ja) * | 1977-08-12 | 1983-07-21 | 株式会社日立製作所 | 半導体装置の製造方法 |
DE2754652A1 (de) * | 1977-12-08 | 1979-06-13 | Ibm Deutschland | Verfahren zum herstellen von silicium-photoelementen |
US4226017A (en) * | 1978-05-15 | 1980-10-07 | Solarex Corporation | Method for making a semiconductor device |
FR2440083A1 (fr) * | 1978-10-26 | 1980-05-23 | Commissariat Energie Atomique | Procede de realisation de composants semi-conducteurs presentant des proprietes de conversion opto-electroniques |
US4297391A (en) * | 1979-01-16 | 1981-10-27 | Solarex Corporation | Method of applying electrical contacts to a photovoltaic cell |
JPS55158679A (en) * | 1979-05-29 | 1980-12-10 | Agency Of Ind Science & Technol | Manufacture of solar cell |
US6180869B1 (en) * | 1997-05-06 | 2001-01-30 | Ebara Solar, Inc. | Method and apparatus for self-doping negative and positive electrodes for silicon solar cells and other devices |
US6262359B1 (en) * | 1999-03-17 | 2001-07-17 | Ebara Solar, Inc. | Aluminum alloy back junction solar cell and a process for fabrication thereof |
US7790574B2 (en) * | 2004-12-20 | 2010-09-07 | Georgia Tech Research Corporation | Boron diffusion in silicon devices |
US10468547B2 (en) * | 2013-07-25 | 2019-11-05 | Korea Institute Of Industrial Technology | Silicon wafer having complex structure, fabrication method therefor and solar cell using same |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL212349A (fr) * | 1955-04-22 | 1900-01-01 | ||
US3044147A (en) * | 1959-04-21 | 1962-07-17 | Pacific Semiconductors Inc | Semiconductor technology method of contacting a body |
CH396228A (de) * | 1962-05-29 | 1965-07-31 | Siemens Ag | Verfahren zum Erzeugen einer hochdotierten p-leitenden Zone in einem Halbleiterkörper, insbesondere aus Silizium |
US3123532A (en) * | 1963-03-06 | 1964-03-03 | Certificate of correction | |
US3373321A (en) * | 1964-02-14 | 1968-03-12 | Westinghouse Electric Corp | Double diffusion solar cell fabrication |
US3513040A (en) * | 1964-03-23 | 1970-05-19 | Xerox Corp | Radiation resistant solar cell |
GB1233545A (fr) * | 1967-08-18 | 1971-05-26 | ||
US3577287A (en) * | 1968-02-12 | 1971-05-04 | Gen Motors Corp | Aluminum diffusion technique |
DE1912666A1 (de) * | 1969-03-13 | 1970-09-24 | Siemens Ag | Verfahren zur Kontaktierung eines Halbleiterkoerpers |
-
1973
- 1973-02-13 US US331740A patent/US3895975A/en not_active Expired - Lifetime
-
1974
- 1974-01-29 CA CA191,182A patent/CA1016848A/en not_active Expired
- 1974-02-05 SE SE7401509A patent/SE391607B/xx unknown
- 1974-02-08 DE DE2405935A patent/DE2405935C2/de not_active Expired
- 1974-02-11 FR FR7404438A patent/FR2335040A1/fr active Granted
- 1974-02-12 IT IT67391/74A patent/IT1004927B/it active
- 1974-02-13 JP JP49017469A patent/JPS49114889A/ja active Pending
- 1974-02-13 NL NL7401992A patent/NL7401992A/xx not_active Application Discontinuation
- 1974-02-13 BE BE140829A patent/BE810943A/fr unknown
- 1974-02-13 GB GB659374A patent/GB1452637A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
GB1452637A (en) | 1976-10-13 |
DE2405935C2 (de) | 1983-09-01 |
FR2335040A1 (fr) | 1977-07-08 |
FR2335040B1 (fr) | 1978-06-23 |
DE2405935A1 (de) | 1974-08-15 |
SE391607B (sv) | 1977-02-21 |
JPS49114889A (fr) | 1974-11-01 |
US3895975A (en) | 1975-07-22 |
AU6529774A (en) | 1975-08-07 |
NL7401992A (fr) | 1974-08-15 |
CA1016848A (en) | 1977-09-06 |
IT1004927B (it) | 1976-07-20 |
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