JPS49114889A - - Google Patents
Info
- Publication number
- JPS49114889A JPS49114889A JP49017469A JP1746974A JPS49114889A JP S49114889 A JPS49114889 A JP S49114889A JP 49017469 A JP49017469 A JP 49017469A JP 1746974 A JP1746974 A JP 1746974A JP S49114889 A JPS49114889 A JP S49114889A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/033—Diffusion of aluminum
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US331740A US3895975A (en) | 1973-02-13 | 1973-02-13 | Method for the post-alloy diffusion of impurities into a semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS49114889A true JPS49114889A (ja) | 1974-11-01 |
Family
ID=23295183
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP49017469A Pending JPS49114889A (ja) | 1973-02-13 | 1974-02-13 |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US3895975A (ja) |
| JP (1) | JPS49114889A (ja) |
| BE (1) | BE810943A (ja) |
| CA (1) | CA1016848A (ja) |
| DE (1) | DE2405935C2 (ja) |
| FR (1) | FR2335040A1 (ja) |
| GB (1) | GB1452637A (ja) |
| IT (1) | IT1004927B (ja) |
| NL (1) | NL7401992A (ja) |
| SE (1) | SE391607B (ja) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5136886A (ja) * | 1974-09-24 | 1976-03-27 | Sony Corp | |
| JPS55158679A (en) * | 1979-05-29 | 1980-12-10 | Agency Of Ind Science & Technol | Manufacture of solar cell |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4137095A (en) * | 1976-07-14 | 1979-01-30 | Solarex Corporation | Constant voltage solar cell and method of making same |
| US4349691A (en) * | 1977-04-05 | 1982-09-14 | Solarex Corporation | Method of making constant voltage solar cell and product formed thereby utilizing low-temperature aluminum diffusion |
| JPS5833693B2 (ja) * | 1977-08-12 | 1983-07-21 | 株式会社日立製作所 | 半導体装置の製造方法 |
| DE2754652A1 (de) * | 1977-12-08 | 1979-06-13 | Ibm Deutschland | Verfahren zum herstellen von silicium-photoelementen |
| US4226017A (en) * | 1978-05-15 | 1980-10-07 | Solarex Corporation | Method for making a semiconductor device |
| FR2440083A1 (fr) * | 1978-10-26 | 1980-05-23 | Commissariat Energie Atomique | Procede de realisation de composants semi-conducteurs presentant des proprietes de conversion opto-electroniques |
| US4297391A (en) * | 1979-01-16 | 1981-10-27 | Solarex Corporation | Method of applying electrical contacts to a photovoltaic cell |
| US6180869B1 (en) * | 1997-05-06 | 2001-01-30 | Ebara Solar, Inc. | Method and apparatus for self-doping negative and positive electrodes for silicon solar cells and other devices |
| US6262359B1 (en) * | 1999-03-17 | 2001-07-17 | Ebara Solar, Inc. | Aluminum alloy back junction solar cell and a process for fabrication thereof |
| US7790574B2 (en) * | 2004-12-20 | 2010-09-07 | Georgia Tech Research Corporation | Boron diffusion in silicon devices |
| JP6367940B2 (ja) * | 2013-07-25 | 2018-08-01 | コリア インスチチュート オブ インダストリアル テクノロジー | 複合構造のシリコンウエハーの製造方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4221288Y1 (ja) * | 1964-02-14 | 1967-12-08 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL97268C (ja) * | 1955-04-22 | 1900-01-01 | ||
| US3044147A (en) * | 1959-04-21 | 1962-07-17 | Pacific Semiconductors Inc | Semiconductor technology method of contacting a body |
| CH396228A (de) * | 1962-05-29 | 1965-07-31 | Siemens Ag | Verfahren zum Erzeugen einer hochdotierten p-leitenden Zone in einem Halbleiterkörper, insbesondere aus Silizium |
| US3123532A (en) * | 1963-03-06 | 1964-03-03 | Certificate of correction | |
| US3513040A (en) * | 1964-03-23 | 1970-05-19 | Xerox Corp | Radiation resistant solar cell |
| GB1233545A (ja) * | 1967-08-18 | 1971-05-26 | ||
| US3577287A (en) * | 1968-02-12 | 1971-05-04 | Gen Motors Corp | Aluminum diffusion technique |
| DE1912666A1 (de) * | 1969-03-13 | 1970-09-24 | Siemens Ag | Verfahren zur Kontaktierung eines Halbleiterkoerpers |
-
1973
- 1973-02-13 US US331740A patent/US3895975A/en not_active Expired - Lifetime
-
1974
- 1974-01-29 CA CA191,182A patent/CA1016848A/en not_active Expired
- 1974-02-05 SE SE7401509A patent/SE391607B/xx unknown
- 1974-02-08 DE DE2405935A patent/DE2405935C2/de not_active Expired
- 1974-02-11 FR FR7404438A patent/FR2335040A1/fr active Granted
- 1974-02-12 IT IT67391/74A patent/IT1004927B/it active
- 1974-02-13 JP JP49017469A patent/JPS49114889A/ja active Pending
- 1974-02-13 BE BE140829A patent/BE810943A/xx unknown
- 1974-02-13 GB GB659374A patent/GB1452637A/en not_active Expired
- 1974-02-13 NL NL7401992A patent/NL7401992A/xx not_active Application Discontinuation
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4221288Y1 (ja) * | 1964-02-14 | 1967-12-08 |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5136886A (ja) * | 1974-09-24 | 1976-03-27 | Sony Corp | |
| JPS5821434B2 (ja) * | 1974-09-24 | 1983-04-30 | ソニー株式会社 | タイヨウデンチ |
| JPS55158679A (en) * | 1979-05-29 | 1980-12-10 | Agency Of Ind Science & Technol | Manufacture of solar cell |
Also Published As
| Publication number | Publication date |
|---|---|
| GB1452637A (en) | 1976-10-13 |
| FR2335040A1 (fr) | 1977-07-08 |
| DE2405935A1 (de) | 1974-08-15 |
| NL7401992A (ja) | 1974-08-15 |
| FR2335040B1 (ja) | 1978-06-23 |
| US3895975A (en) | 1975-07-22 |
| SE391607B (sv) | 1977-02-21 |
| DE2405935C2 (de) | 1983-09-01 |
| CA1016848A (en) | 1977-09-06 |
| AU6529774A (en) | 1975-08-07 |
| IT1004927B (it) | 1976-07-20 |
| BE810943A (fr) | 1974-08-13 |